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Infineon Technologies BC846PNE6327BTSA1

Part No.:
BC846PNE6327BTSA1
Manufacturer:
Infineon Technologies
Category:
Bipolar Transistor Arrays
Package:
6-VSSOP, SC-88, SOT-363
Datasheet:
AetrixBC846PNE6327BTSA1.pdf
Description:
TRANS NPN/PNP 65V PG-SOT363-PO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,078

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Product details

Overview

BC846PNE6327BTSA1 from Infineon Technologies is a dual NPN/PNP silicon small-signal transistor array in a single SOT-363 (SC-74) package, configured as galvanically isolated complementary pairs. It delivers VCEO = 65 V (NPN), VCEO = 45 V (PNP), hFE up to 450 at IC = 2 mA, and VCE(sat) ≤ 300 mV at IC = 10 mA / IB = 0.5 mA - used in AF input stages, push-pull drivers, and level-shifting circuits in automotive body control modules.

For engineers reviewing the BC846PNE6327BTSA1 datasheet, BC846PNE6327BTSA1 pinout, BC846PNE6327BTSA1 application, or BC846PNE6327BTSA1 equivalent, key selection criteria include complementary pair matching, low saturation voltage for efficient switching, AEC-Q101 qualification, thermal resistance (RthJS ≤ 140 K/W), and SOT-363 footprint compatibility with space-constrained PCB layouts.

Technical Context

This device integrates two electrically isolated transistors - one NPN (BC846PN) and one PNP (BC846UPN) - enabling complementary operation without external isolation. Its design supports linear amplification and digital switching in single-supply configurations, with matched hFE spread and symmetrical VBE(sat) characteristics across both devices.

The SOT-363 package provides six terminals with defined pinout (E1-B1-C2-E2-B2-C1), supporting independent biasing of each transistor. Thermal performance is characterized by junction-to-solder-point resistance ≤140 K/W, validated under TS ≤ 115°C for BC846PN/UPN variants, enabling reliable operation in ambient temperatures up to 125°C.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO (NPN)65 V - supports rail voltages up to 48 V systems with safety margin
VCEO (PNP)45 V - enables use in 24 V automotive logic-level interfaces
hFE (IC = 2 mA)200–450 - ensures stable current gain across production lots for predictable biasing
VCE(sat) (IC = 10 mA)≤300 mV - minimizes conduction loss in driver-stage switching
fT250 MHz - sufficient for audio-frequency amplification and low-speed digital signal conditioning
RthJS≤140 K/W - allows 250 mW power dissipation with ≤35 K junction-to-solder rise at rated load
AEC-Q101Qualified - meets stress test requirements for automotive electronics reliability

Pinout & Package

SOT-363 (SC-74) surface-mount package with 6-pin configuration, 0.65 mm pitch, and lead-free (RoHS-compliant) finish. Dimensions: 2.9 × 1.9 × 1.1 mm (L × W × H).

Pin/TerminalCircuit RoleDesign Meaning
1 (E1)NPN EmitterReference node for NPN transistor; tied to ground or local emitter degeneration resistor
2 (B1)NPN BaseControl input for NPN switch/amplifier; requires current-limited drive per hFE ratio
3 (C2)PNP CollectorOutput node for PNP side; connects to load when PNP is active-low
4 (E2)PNP EmitterHigh-side reference for PNP; typically connected to VCC or regulated supply rail
5 (B2)PNP BaseInverted control input for PNP; driven low to enable conduction
6 (C1)NPN CollectorOutput node for NPN side; sinks current to ground when active

Key Features

FeatureDesign Value
Complementary NPN/PNP pairGalvanic isolation between transistors enables independent biasing and eliminates cross-talk in push-pull stages
Low VCE(sat)≤300 mV at IC = 10 mA ensures <10 mW conduction loss per transistor in driver applications
AEC-Q101 qualificationValidated for automotive under-hood environments including temperature cycling, humidity, and mechanical shock
Matched hFE range200–450 at IC = 2 mA supports consistent gain across dual-channel designs without trimming

Applications

Automotive Door Module DriverIndustrial Sensor Signal Conditioning

Use Scenario: Driving window lift motor direction control via H-bridge interface with microcontroller GPIO.

IC Role / Device Role / Timing Role: Dual transistor pair acts as high-side (PNP) and low-side (NPN) switches in discrete half-bridge configuration.

Use Value: Complementary pairing reduces component count vs. discrete transistors; AEC-Q101 rating ensures 15-year field reliability in 12 V vehicle systems.

Use Scenario: Amplifying low-level thermistor or RTD output before ADC sampling in PLC analog input modules.

IC Role / Device Role / Timing Role: NPN stage provides fixed-gain preamplification; PNP stage buffers output to drive 500 Ω ADC input impedance.

Use Value: Matched hFE and low VCE(sat) minimize offset drift and self-heating error over –40°C to +85°C operating range.

USB-C Power Delivery FeedbackSmart Lighting Dimming Control

Use Scenario: Isolating and level-shifting feedback signals between isolated buck-boost controller and primary-side MCU in USB PD adapters.

IC Role / Device Role / Timing Role: NPN/PNP pair implements bidirectional level translation between 3.3 V and 5 V domains with no external pull-ups.

Use Value: Galvanic isolation prevents ground loop noise coupling; fT > 250 MHz supports clean 100 kHz PWM feedback timing.

Use Scenario: Driving triac gate in phase-cut dimmer circuits for LED retrofit lamps with microcontroller-based zero-cross detection.

IC Role / Device Role / Timing Role: PNP transistor triggers triac gate during positive half-cycle; NPN handles negative half-cycle via optocoupler interface.

Use Value: VCEO = 65 V (NPN) and 45 V (PNP) safely withstand 230 V AC peak voltages with margin; low VBE(sat) ensures fast turn-on below 1 µs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary transistor array applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC847PNE6327HTSA1VCEO reduced to 45 V (NPN) and 45 V (PNP); hFE min 110Limited to ≤24 V systems; lower gain requires larger base drive currentSelect when cost sensitivity outweighs voltage headroom needs in non-automotive consumer applications
MBT3904DW1T1GSingle-die dual NPN only; no PNP; VCEO = 40 V; RthJS = 200 K/WCannot implement true complementary switching; unsuitable for push-pull or level-shifting requiring inversionChoose only for dual-NPN-only functions like differential pair amplifiers where PNP functionality is unnecessary

Compared with BC846PNE6327BTSA1, BC847PNE6327HTSA1 trades voltage rating for cost, while MBT3904DW1T1G sacrifices complementarity for higher integration density - neither offers AEC-Q101 qualification or matched NPN/PNP VCE(sat) performance.

Availability

BC846PNE6327BTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, USB-C power delivery feedback circuits, and smart lighting dimming control requiring stable component supply and long-term lifecycle support.

Supply support for BC846PNE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete power devices, with global manufacturing and quality certification to ISO/TS 16949.

This part belongs to Infineon's BC846/BC847PN family of AEC-Q101-qualified complementary transistor arrays, designed specifically for space-constrained, high-reliability automotive signal conditioning and discrete switching applications.

FAQ

Is BC846PNE6327BTSA1 pin-compatible with BC847PNE6327HTSA1?

No. While both use SOT-363 packaging, BC846PNE6327BTSA1 has NPN/PNP pairing with VCEO = 65 V / 45 V, whereas BC847PNE6327HTSA1 uses NPN/NPN pairing with VCEO = 45 V / 45 V. Pin 3 (C2) and Pin 6 (C1) serve different transistor types, making direct substitution unsafe without circuit redesign.

What is the maximum continuous collector current per transistor?

The absolute maximum DC collector current is 100 mA per transistor, as specified in the "Maximum Ratings" table. Derating is required above 25°C ambient: at TS = 115°C, total package power dissipation is limited to 250 mW, implying ~125 mA per device only if perfectly balanced and thermally coupled - practical design limit remains 100 mA continuous.

Does this device require external base resistors in switching applications?

Yes. The BC846PNE6327BTSA1 lacks integrated base resistors. For reliable saturation at IC = 10 mA, a 10 kΩ resistor is typical for 3.3 V GPIO drive; for 100 mA switching, base current must exceed 5 mA, requiring ≤680 Ω with 3.3 V drive. Failure to limit base current risks exceeding IBM = 100 mA peak rating.

Can BC846PNE6327BTSA1 be used in linear amplifier configurations?

Yes - its hFE stability (200–450), low VCE(sat), and fT = 250 MHz support Class-A and Class-AB audio preamplifier stages. However, thermal derating must be applied: at 250 mW total package dissipation, junction temperature rises ~35 K above solder point, limiting usable quiescent current in high-gain configurations without heatsinking.

BC846PNE6327BTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
6-VSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
1 NPN, 1 PNP
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
65V
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Power - Max:
250mW
Frequency - Transition:
250MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT363-PO

BC846PNE6327BTSA1 FAQ

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Please submit a Request for Quotation (RFQ) for BC846PNE6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC846PNE6327BTSA1 reliable?

The price and inventory of BC846PNE6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC846PNE6327BTSA1 is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC846PNE6327BTSA1?

For technical support, including BC846PNE6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC846PNE6327BTSA1 requirements.

6.How does Aetrix verify that BC846PNE6327BTSA1 is sourced from the original manufacturer or authorized distributors?

All BC846PNE6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC846PNE6327BTSA1 meets industry standards.

7.What is the process for return or replacement of BC846PNE6327BTSA1?

All BC846PNE6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC846PNE6327BTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC846PNE6327BTSA1 part is unused and in its original packaging.

Return procedure for BC846PNE6327BTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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