Infineon Technologies BC846SE6327BTSA1
- Part No.:
- BC846SE6327BTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BC846SE6327BTSA1.pdf
- Description:
- TRANS 2NPN 65V 0.1A PG-SOT363-PO
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BC846SE6327BTSA1 from Infineon Technologies is a dual NPN silicon small-signal transistor array in SOT-363 (SC74) package, designed for AF input stages and driver applications. It features two galvanically isolated transistors with matched hFE (min 200 at IC = 10 µA), VCEO = 65 V, and low VCE(sat) of 90 mV (typ) at IC = 10 mA / IB = 0.5 mA. Used in automotive audio preamplifier stages requiring stable gain matching and AEC-Q101 qualification.
For engineers reviewing the BC846SE6327BTSA1 datasheet, BC846SE6327BTSA1 pinout, BC846SE6327BTSA1 application, or BC846SE6327BTSA1 equivalent, key selection criteria include dual-transistor matching tolerance, junction temperature rating (Tj = 150 °C), VCEO/VCBO voltage margins, thermal resistance (RthJS ≤ 140 K/W), and RoHS-compliant Pb-free packaging for automotive-grade reliability.
Technical Context
This dual NPN array integrates two electrically isolated transistors on a single die with tightly controlled hFE spread (200–450 at IC = 2 mA) and matched VBE(sat) (660–770 mV). Its fT = 250 MHz enables stable operation up to mid-VHF range in small-signal amplification.
The device operates under AEC-Q101 stress testing for automotive use, with guaranteed performance across −65 °C to +150 °C storage and junction temperatures. Thermal design relies on RthJS ≤ 140 K/W and derated Ptot = 250 mW at TS ≤ 115 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 65 V - supports rail-to-rail signal swing in 48 V automotive subsystems without breakdown |
| hFE (min) | 200 @ IC = 10 µA - ensures reliable biasing in high-impedance AF input networks |
| VCE(sat) | 90 mV typ @ IC = 10 mA - minimizes power loss in low-voltage driver stages |
| fT | 250 MHz - enables stable small-signal amplification up to FM radio band frequencies |
| RthJS | ≤140 K/W - allows direct PCB copper pour thermal coupling for compact layout |
| Ptot | 250 mW @ TS ≤ 115 °C - defines maximum continuous dissipation before thermal shutdown |
| Ccb | 0.95 pF - limits Miller effect in common-emitter gain stages |
Pinout & Package
SOT-363 (SC74) surface-mount package with 6-pin lead frame, 0.65 mm pitch, and exposed thermal pad (not electrically connected). Dimensions: 2.1 × 2.0 × 0.9 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (E1) | Emitter of Transistor 1 | Low-impedance current sink node for TR1; tied to local ground reference |
| 2 (B1) | Base of Transistor 1 | High-impedance control input; requires series resistor for current limiting |
| 3 (C2) | Collector of Transistor 2 | Active output node for TR2; connects to load or next stage collector pull-up |
| 4 (E2) | Emitter of Transistor 2 | Independent emitter return for TR2; enables separate biasing from TR1 |
| 5 (B2) | Base of Transistor 2 | Isolated control input; no internal coupling to B1 ensures independent switching |
| 6 (C1) | Collector of Transistor 1 | Primary output node for TR1; used in differential pair or cascode configurations |
Key Features
| Feature | Design Value |
|---|---|
| Galvanic isolation between transistors | Prevents crosstalk in dual-channel AF preamp designs; enables independent bias networks |
| AEC-Q101 qualification | Validated for automotive under-hood environments including temperature cycling and humidity exposure |
| Matched hFE and VBE | Reduces gain mismatch to < ±10% in differential pairs without external trimming |
| Pb-free RoHS compliance | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (peak 260 °C) |
| Low VCE(sat) at low IB | Enables efficient switching with 0.5 mA base drive - reduces MCU GPIO loading in driver ICs |
Applications
| Automotive Audio Preamp | LED Driver Interface |
|---|---|
Use Scenario: Dual-channel microphone preamplifier in vehicle infotainment head unit with shared power rail but isolated signal paths. IC Role / Device Role / Timing Role: Dual NPN transistor array provides matched gain stages for left/right analog audio inputs before ADC conversion. Use Value: Matched hFE and VBE ensure channel balance within 0.5 dB; low VCE(sat) preserves dynamic range at 5 V supply. | Use Scenario: Low-side current switch for multiplexed LED backlight segments in instrument cluster display. IC Role / Device Role / Timing Role: Two independent NPN switches control separate LED strings using PWM from microcontroller GPIOs. Use Value: Galvanic isolation prevents current leakage between segments; 200 mA peak IC supports 100 mA per string with margin. |
| Industrial Sensor Signal Conditioning | Power Supply Enable Control |
Use Scenario: Amplification and level-shifting of bridge sensor outputs in 24 V industrial PLC analog input modules. IC Role / Device Role / Timing Role: First-stage NPN amplifier converts mV-level Wheatstone bridge signals to 0–3.3 V for SAR ADC interface. Use Value: 65 V VCEO withstands transient surges on 24 V rails; 250 MHz fT maintains bandwidth beyond 10 kHz sensor bandwidth. | Use Scenario: Dual enable path for redundant 5 V LDO regulators supplying safety-critical MCU domains. IC Role / Device Role / Timing Role: Independent NPN switches activate each LDO's EN pin based on system watchdog status. Use Value: Isolation prevents single-point failure propagation; 150 °C Tj rating supports operation near hot power components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN transistor array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847SE6327HTSA1 | VCEO = 45 V (vs. 65 V); hFE min = 110 @ IC = 10 mA | Limited to ≤36 V systems; lower gain requires larger base resistors | Select when cost sensitivity outweighs voltage margin and gain stability needs |
| MBT3904DW1T1G | hFE min = 100 @ IC = 10 mA; RthJS = 150 K/W; no AEC-Q101 qualification | Not qualified for automotive; higher thermal resistance limits power density | Acceptable for commercial-grade consumer electronics where qualification is not required |
Compared with BC846SE6327BTSA1, BC847SE6327HTSA1 trades voltage headroom and gain for lower cost, while MBT3904DW1T1G sacrifices automotive qualification and thermal performance for broader distributor availability.
Availability
BC846SE6327BTSA1 is available at Aetrix Electronics and suitable for automotive audio preamplifiers, industrial sensor signal conditioning, and LED driver interfaces requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BC846SE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.
This part belongs to Infineon's BC846S/BC847S family of AEC-Q101-qualified dual NPN transistors, engineered specifically for high-reliability analog signal conditioning in automotive and industrial environments.
FAQ
What is the maximum allowable base current for continuous operation?
The absolute maximum peak base current is 5 mA per transistor, derived from the ICM = 200 mA rating and minimum hFE of 200. For continuous DC operation, limit IB to ≤1 mA to maintain VCE(sat) ≤ 250 mV and prevent thermal runaway at Tj = 150 °C.
Can BC846SE6327BTSA1 be used in linear amplifier mode with VCE = 12 V?
Yes - VCEO = 65 V exceeds 12 V, and the device is characterized for linear operation at VCE = 5 V. At VCE = 12 V, hFE remains ≥180 (per curve EHP00365), and fT drops only to ~220 MHz, supporting stable Class-A audio amplification.
How does the galvanic isolation affect PCB layout?
Galvanic isolation means no internal substrate connection between transistors, allowing separate ground returns and independent bias networks. Layout must avoid shared emitter traces; each E1/E2 should route directly to its own local ground plane region to preserve isolation integrity and minimize crosstalk.
Is the SOT-363 package compatible with standard reflow profiles?
Yes - the Pb-free SC74 package is qualified for JEDEC J-STD-020D Level 1 moisture sensitivity and withstands peak reflow temperatures up to 260 °C for 30 seconds. Recommended profile uses ramp rate ≤3 °C/s, soak at 150–200 °C for 60–120 s, and time above liquidus (217 °C) of 60–90 s.
BC846SE6327BTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 65V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 250mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BC846SE6327BTSA1 FAQ
1.How can I place an order for BC846SE6327BTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC846SE6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC846SE6327BTSA1 reliable?
The price and inventory of BC846SE6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC846SE6327BTSA1 is usually 5 days.
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Once your BC846SE6327BTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC846SE6327BTSA1?
For technical support, including BC846SE6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC846SE6327BTSA1 requirements.
6.How does Aetrix verify that BC846SE6327BTSA1 is sourced from the original manufacturer or authorized distributors?
All BC846SE6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC846SE6327BTSA1 meets industry standards.
7.What is the process for return or replacement of BC846SE6327BTSA1?
All BC846SE6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC846SE6327BTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC846SE6327BTSA1 part is unused and in its original packaging.
Return procedure for BC846SE6327BTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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