Infineon Technologies BC846SH6727XTSA1

Overview

BC846SH6727XTSA1 from Infineon Technologies is a dual NPN silicon small-signal transistor array in SOT363 (SC74) package, featuring galvanically isolated transistors with matched h_FE (200–450), V_CEO = 65 V, I_C = 100 mA, and f_T = 250 MHz. It serves in AF input stages and driver circuits for compact analog signal conditioning and discrete logic-level translation.

For engineers reviewing the BC846SH6727XTSA1 datasheet, BC846SH6727XTSA1 pinout, BC846SH6727XTSA1 application, or BC846SH6727XTSA1 equivalent, key selection criteria include dual-transistor matching tolerance, low V_CE(sat) (90–250 mV at I_C = 10 mA), AEC-Q101 qualification, RoHS compliance, and thermal resistance R_thJS ≤ 140 K/W.

Technical Context

This dual NPN array integrates two electrically isolated transistors on a single die with tightly controlled parameter matching-especially h_FE and V_BE(sat)-enabling balanced differential amplification and push-pull switching. Its SOT363 footprint supports high-density PCB layouts while maintaining thermal separation between devices.

The device operates across −65 °C to +150 °C junction temperature, with guaranteed V_(BR)CEO ≥ 65 V and f_T ≥ 250 MHz at I_C = 20 mA, V_CE = 5 V, making it suitable for audio preamplifier gain stages and low-power digital interface drivers requiring stable AC response up to 100 MHz.

Key Specifications

Pinout & Package

Package: SOT363 (SC74), 6-pin surface-mount plastic package with gull-wing leads, 2.5 mm × 1.9 mm footprint, 1.1 mm max height, and tape-and-reel packaging (3,000 pcs/reel, ø180 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor array applications.

Compared with BC846SH6727XTSA1, BC847SH6327XTSA1 trades voltage headroom for cost, while MMDT3904-7-F sacrifices gain consistency and thermal performance-making the BC846S optimal for AEC-Q101–required, high-fidelity dual-transistor functions.

Availability

BC846SH6727XTSA1 is available at Aetrix Electronics and suitable for automotive sensor interfaces, portable audio preamplifiers, and industrial LED driver circuits requiring stable component supply and long-term lifecycle assurance.

Supply support for BC846SH6727XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete power devices, with global manufacturing and quality certification to ISO/TS 16949.

The BC846S belongs to Infineon's bipolar transistor portfolio designed specifically for high-reliability analog signal conditioning and discrete switching in automotive and industrial environments.

FAQ

What is the maximum allowable junction temperature for BC846SH6727XTSA1?

The absolute maximum junction temperature is 150 °C, validated per AEC-Q101 stress testing. Operation above this limit risks permanent degradation of h_FE and increased leakage. Derating curves in Figure 6 confirm 250 mW total power dissipation is permissible only when solder-point temperature remains ≤115 °C.

Does BC846SH6727XTSA1 support pulse operation beyond its DC ratings?

Yes-pulse load capability is defined in Figure 7: at duty cycle D = 0.02 and pulse width t_p ≤ 100 µs, peak power can reach 5× DC rating (1.25 W). This enables short-duration surge handling in motor commutation or ESD clamp circuits without thermal runaway.

How is pin 1 identified on the SOT363 package?

Pin 1 is marked by a molded dot or laser-etched notch near the leftmost lead when viewing the top side with leads pointing downward and the marking side up. Per package drawing EHA07178, the pin 1 location corresponds to terminal E1 (Emitter of Transistor 1), confirmed by orientation diagrams in Infineon's SC74 outline documentation.

Is BC846SH6727XTSA1 suitable for use in high-frequency oscillator circuits?

No-it is not optimized for oscillator design. While f_T = 250 MHz indicates usable gain at RF frequencies, lack of specified phase noise, parasitic capacitance stability, or built-in bias networks makes it unsuitable versus dedicated RF transistors like BFR92A. Use only in amplifier or switch roles below 100 MHz.