Nexperia USA Inc. BC846SHF

Overview

BC846SH from Nexperia is a dual NPN general-purpose transistor in SOT363 (SC-88) package, rated for 65 V V_CEO, 100 mA I_C, and 110 minimum h_FE at 2 mA/5 V; it delivers matched gain, low 200–300 mV V_CEsat at 100 mA/5 mA drive, and operates up to 175 °C junction temperature-used in compact dual-switching nodes of industrial sensor signal conditioning circuits.

For engineers reviewing the BC846SH datasheet, BC846SH pinout, BC846SH application, or BC846SH equivalent, this page provides verified pin functions, thermal derating curves, per-transistor limiting values, and real-world use cases for dual-transistor space-constrained designs requiring mutual interference isolation and high-temperature stability.

Technical Context

This dual NPN device integrates two electrically isolated transistors in one TSSOP6 package, with no shared substrate coupling-enabling independent biasing and switching without crosstalk. Each transistor supports V_CEO = 65 V, I_C = 100 mA continuous, and f_T = 100 MHz at 10 mA/5 V, making it suitable for medium-speed digital logic interfacing and analog amplification stages.

Thermal design is enabled by R_th(j-a) = 375 K/W (per device on FR4 PCB) and P_tot = 400 mW at T_amb ≤ 25 °C, with linear derating above 25 °C. The matched h_FE across both transistors reduces calibration overhead in differential pair or current mirror configurations.

Key Specifications

Pinout & Package

SOT363 (TSSOP6) plastic surface-mount package: 2.1 mm × 1.25 mm × 0.95 mm body, 0.65 mm lead pitch, 6-pin symmetrical layout with pin 1 index marker.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Compared with BC846SH, BC847SH offers wider h_FE range for gain-critical analog stages, while MBT3904DW1T1G trades voltage headroom for marginally lower cost in low-voltage digital systems-neither matches BC846SH's balanced 65 V/100 mA/175 °C specification set.

Availability

BC846SH is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, compact logic level shifting, and high-density relay driver arrays requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BC846SH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including logic, discretes, MOSFETs, and ESD protection devices.

The BC846SH belongs to Nexperia's general-purpose bipolar transistor family, engineered for space-constrained industrial and consumer applications demanding robustness, thermal resilience, and consistent parametric matching across dual elements.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum peak base current is 200 mA (single pulse, t_p ≤ 1 ms), but for continuous DC operation, IBM is not specified. Design practice limits I_B to ≤5 mA per transistor to maintain V_CEsat ≤ 300 mV and avoid thermal runaway-verified by Fig. 5 showing stable saturation behavior up to 5 mA at 25 °C.

Can BC846SH be used in linear amplifier mode?

Yes-its h_FE stability across I_C = 0.1–100 mA (Fig. 3) and low 1.2 pF collector capacitance support Class-A and AB amplification up to 100 MHz. However, linearity is optimized at V_CE ≥ 1 V; operation below 0.5 V risks distortion due to Early effect compression.

Is the SOT363 package compatible with standard reflow profiles?

Yes-the device is qualified for JEDEC J-STD-020D reflow, with peak temperature ≤ 260 °C. Figure 12 specifies solder land dimensions (0.5 mm × 0.6 mm pads, 2.65 mm × 2.35 mm overall footprint), and thermal resistance data assumes FR4 PCB with 35 µm copper and tin plating.

How does thermal performance differ between per-transistor and per-device ratings?

P_tot = 270 mW applies to a single transistor operating alone; P_tot = 400 mW applies when both transistors share the same die and PCB thermal path. Derating follows Fig. 1: above 25 °C ambient, total device power must decrease by 1.07 mW/°C to stay within 175 °C T_j.