Nexperia USA Inc. BC846SHX

Overview

BC846SH from Nexperia is a dual NPN general-purpose transistor in SOT363 (SC-88) package, rated for 65 V V_CEO, 100 mA I_C, and 110 minimum h_FE at 2 mA/5 V; it delivers matched gain, low V_CE(sat) (200–300 mV @ 100 mA), and operates up to 175 °C junction temperature - used in compact dual-switching circuits such as LED driver pairs and logic-level signal routing.

For engineers reviewing the BC846SH datasheet, BC846SH pinout, BC846SH application, or BC846SH equivalent, this page provides verified pin functions, thermal derating curves, per-transistor limiting values, and validated alternatives for space-constrained industrial control and automotive body electronics designs.

Technical Context

The BC846SH integrates two electrically isolated NPN transistors in a single TSSOP6 package with no mutual interference, enabling independent biasing and switching. Each transistor supports V_CEO = 65 V, I_C = 100 mA continuous, and f_T = 100 MHz at 10 mA/5 V - suitable for medium-speed digital switching and linear amplification below 100 MHz.

Its thermal design accommodates high ambient operation: R_th(j-a) = 375 K/W per device on FR4 PCB, with P_tot derated to 400 mW at 25 °C ambient and full functionality maintained from −55 °C to +175 °C ambient.

Key Specifications

Pinout & Package

SOT363 (TSSOP6) plastic surface-mount package: 2.1 mm × 1.25 mm × 0.95 mm body, 0.65 mm lead pitch, 6-pin layout with index mark on Pin 1 side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-NPN switching applications.

Compared with BC847SH and MBT3904DW1T1G, the BC846SH uniquely balances moderate gain, 65 V capability, and 175 °C operation - making it optimal for ruggedized dual-switching where voltage margin and thermal robustness outweigh ultra-high h_FE.

Availability

BC846SH is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive body control modules, and compact power supply sequencing requiring stable component supply across extended temperature ranges.

Supply support for BC846SH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient solutions.

The BC846SH belongs to Nexperia's general-purpose bipolar transistor family, designed specifically for space-constrained, thermally demanding applications where dual-transistor integration improves reliability and reduces bill-of-materials count.

FAQ

What is the maximum safe operating voltage for BC846SH in continuous DC switching?

The absolute maximum V_CEO is 65 V, but for reliable long-term operation, Nexperia recommends limiting V_CE to ≤52 V (80% of rating) under continuous DC conditions with adequate PCB copper area for thermal dissipation. Derating is required above 70 °C ambient per Figure 1's 375 K/W curve.

Can BC846SH replace two discrete BC846B transistors in an existing design?

Yes - BC846SH uses identical per-transistor characteristics (V_CEO, h_FE, V_CE(sat)) and shares the same SOT363 pinout as dual BC846B equivalents. Layout adaptation is minimal: Pin 1–2–6 map to E-B-C of first transistor; Pin 4–5–3 map to E-B-C of second, preserving all external bias networks.

Does BC846SH support pulsed operation beyond its 100 mA continuous rating?

Yes - the peak collector current I_CM is rated at 200 mA for single pulses ≤1 ms (duty cycle ≤2%). This enables short-duration surge handling in relay coil snubbing or capacitor charging circuits, provided pulse energy stays within the SOA limits defined in the datasheet's thermal impedance curves.

How does the BC846SH's thermal performance compare to SOT23 dual packages?

BC846SH's R_th(j-a) = 375 K/W (per device) is ~15% lower than typical dual-SOT23 layouts due to optimized copper exposure in the TSSOP6 footprint. Its 0.65 mm pitch also allows tighter thermal vias under Pins 3 and 6 (collectors), improving heat extraction in multi-layer boards versus discrete SOT23 placements.