Infineon Technologies BC846UE6327HTSA1

Overview

BC846UE6327HTSA1 from Infineon Technologies is a dual NPN silicon small-signal transistor array in SOT-363 (SC-74) package, featuring two galvanically isolated transistors with matched h_FE (200–450), V_CEO = 65 V, and V_CE(sat) ≤ 250 mV at I_C = 10 mA / I_B = 0.5 mA. It is designed for AF input stages and driver applications in compact analog signal paths.

For engineers reviewing the BC846UE6327HTSA1 datasheet, BC846UE6327HTSA1 pinout, BC846UE6327HTSA1 application, or BC846UE6327HTSA1 equivalent, key selection criteria include dual-transistor matching tolerance, low saturation voltage under 10 mA drive, thermal resistance R_thJS ≤ 130 K/W, AEC-Q101 qualification, and RoHS-compliant SOT-363 packaging for space-constrained automotive and industrial PCBs.

Technical Context

This device integrates two independent NPN transistors on a single die with guaranteed parameter matching-critical for differential pair amplifiers and push-pull drivers. Its f_T = 250 MHz enables stable operation up to mid-VHF frequencies, while C_cb = 0.95 pF and C_eb = 9 pF support low-noise small-signal gain at 1 kHz–100 MHz.

The BC846U variant is thermally optimized for higher power dissipation (P_tot = 250 mW at T_S ≤ 118 °C) versus BC846S/BC847S, with lower R_thJS (≤130 K/W) and extended I_C rating (100 mA continuous, 200 mA pulsed). All electrical characteristics are specified across −65 °C to +150 °C operating range.

Key Specifications

Pinout & Package

SOT-363 (SC-74) surface-mount package: 6-pin, 2.1 mm × 2.0 mm footprint, 0.65 mm pitch, gull-wing leads, tape-and-reel (3000 pcs/reel, ø180 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor array applications.

Compared with BC846UE6327HTSA1, BC847BE6327HTSA1 trades 20 V collector rating and 10 K/W higher thermal resistance for marginally higher typical h_FE, while MMDT3904-7-F offers identical electrical specs but lacks automotive qualification and demands pinout-aware layout changes.

Availability

BC846UE6327HTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor signal chains, and medical patient monitoring equipment requiring stable component supply and long-term lifecycle assurance.

Supply support for BC846UE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949.

The BC846U series belongs to Infineon's bipolar transistor portfolio targeting high-reliability analog signal conditioning and discrete switching in automotive and industrial environments, emphasizing parameter matching, thermal robustness, and AEC-Q101 compliance.

FAQ

What is the maximum continuous collector current per transistor in BC846UE6327HTSA1?

The maximum continuous collector current I_C is 100 mA per transistor, verified per datasheet Section 2 (Maximum Ratings) at T_S ≤ 118 °C. This rating assumes proper PCB copper area for heat dissipation and applies individually to each of the two NPN devices-no derating is required for simultaneous conduction.

Does BC846UE6327HTSA1 support DC-coupled differential pair configurations?

Yes-its galvanic isolation between transistors, matched h_FE (200–450), and tight V_BE(on) tolerance (580–770 mV) enable stable DC-coupled differential amplifiers. The absence of substrate coupling eliminates common-emitter feedback paths, preserving CMRR above 60 dB at 1 kHz as confirmed in Application Note AN077.

How does the thermal resistance R_thJS of BC846UE6327HTSA1 compare to BC846SE6327HTSA1?

BC846UE6327HTSA1 has R_thJS ≤ 130 K/W, while BC846SE6327HTSA1 is rated ≤ 140 K/W. This 10 K/W improvement reflects optimized die attach and leadframe design in the 'U' variant, enabling 250 mW dissipation at a 3 °C lower case temperature under identical PCB conditions.

Can BC846UE6327HTSA1 be used in place of BC846BE6327HTSA1 without circuit modification?

No-BC846BE6327HTSA1 is a single-transistor SOT-23 device, whereas BC846UE6327HTSA1 is a dual-transistor SOT-363 with different pinout, footprint, and internal topology. Direct substitution would require PCB redesign, netlist updates, and validation of inter-transistor interaction effects in the target application.