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Nexperia USA Inc. BC847BS,135
- Part No.:
- BC847BS,135
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BC847BS,135.pdf
- Description:
- TRANS 2NPN 45V 100MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:155,767
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Product details
Overview
BC847BS,135 from Nexperia is a dual NPN general-purpose transistor pair in SOT363-3 (TSSOP6) package, rated for 45 V VCEO, 100 mA IC, and DC current gain hFE of 200–450 at 2 mA/5 V. It delivers low VCE(sat) (≤300 mV @ 100 mA/5 mA), low Cc (1.5 pF), and matched hFE across both transistors - used in compact dual-switching nodes and analog signal conditioning stages.
For engineers reviewing the BC847BS,135 datasheet, BC847BS,135 pinout, BC847BS,135 application, or BC847BS,135 equivalent, this device is selected for space-constrained dual-transistor functions requiring thermal stability up to 150 °C junction temperature, low mutual interference, and consistent gain matching between channels.
Technical Context
The BC847BS,135 integrates two electrically isolated NPN transistors sharing a single 6-pin TSSOP6 package with no internal coupling - enabling independent biasing and switching. Its design supports simultaneous small-signal amplification and digital switching within one footprint, with verified thermal resistance Rth(j-a) ≤ 568 K/W (per transistor, FR4 standard pad).
Key electrical behaviors include VBE = 580–700 mV at 2 mA/5 V, fT = 100 MHz at 10 mA/5 V, and ICBO ≤ 15 nA at 30 V - confirming suitability for low-noise, medium-frequency linear and saturated-mode operation in ambient ranges from −65 °C to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating voltage headroom in switching applications. |
| IC | 100 mA - Continuous collector current rating; sets maximum steady-state load drive capability per transistor. |
| hFE | 200–450 - DC current gain at VCE = 5 V, IC = 2 mA; enables predictable base drive sizing for amplification or saturated switching. |
| VCE(sat) | ≤300 mV @ IC = 100 mA, IB = 5 mA - Low saturation voltage minimizes power loss and heating during on-state switching. |
| Cc | 1.5 pF - Collector capacitance at 10 V; limits high-frequency signal distortion and ensures stable operation up to ~100 MHz. |
| Ptot | 220 mW (per transistor, standard FR4 pad) - Total power dissipation limit defining thermal derating requirements in PCB layout. |
| Tj | 150 °C - Maximum junction temperature; determines allowable ambient rise and heatsinking needs in sealed enclosures. |
Pinout & Package
SOT363-3 (TSSOP6) surface-mount plastic package: 1.3 mm × 2.2 mm footprint, 0.65 mm pitch, 1.1 mm height, matte tin-plated leads, JEDEC-compliant reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 | Low-impedance current sink node for first transistor; connects directly to ground or emitter resistor in common-emitter configuration. |
| 2 | Base of TR1 | Control input for TR1; requires current-limited drive to achieve target hFE-based collector current. |
| 3 | Collector of TR2 | High-side output node for second transistor; used as active load or switch output in dual-stage topologies. |
| 4 | Emitter of TR2 | Independent emitter reference for TR2; allows separate biasing from TR1, eliminating cross-talk. |
| 5 | Base of TR2 | Isolated control input for TR2; enables asynchronous or complementary switching without shared base network. |
| 6 | Collector of TR1 | Primary output node for TR1; routed to load or next stage; shares no internal connection with TR2 collector. |
Key Features
| Feature | Design Value |
|---|---|
| Low collector-emitter saturation voltage | VCE(sat) ≤ 300 mV at 100 mA/5 mA drive - reduces conduction loss by >40% vs. legacy general-purpose transistors. |
| Closely matched hFE | Both transistors exhibit hFE within same 200–450 range at identical test conditions - simplifies dual-channel bias network design. |
| No mutual interference | Electrically isolated die structure with separate emitter/base/collector terminals - prevents crosstalk in mixed-signal or timing-critical dual paths. |
| Reduced board space | Dual-transistor function in 1.3 × 2.2 mm outline - replaces two discrete SOT23 devices, saving ≥40% PCB area and assembly steps. |
| Low collector capacitance | Cc = 1.5 pF - maintains signal integrity above 50 MHz and minimizes Miller effect in amplifier feedback loops. |
Applications
| LED Driver Pair | Level-Shifting Interface |
|---|---|
|
Use Scenario: Driving dual-color LED indicators with independent on/off control in portable instrumentation panels. IC Role / Device Role / Timing Role: Dual NPN switch providing isolated current paths for red/green LEDs from 3.3 V microcontroller GPIOs. Use Value: Eliminates need for two separate SOT23 transistors and associated passives; VCE(sat) ≤ 300 mV ensures >95% LED forward voltage utilization at 20 mA. |
Use Scenario: Translating logic signals between 5 V legacy peripherals and 3.3 V MCU I/O pins in industrial gateways. IC Role / Device Role / Timing Role: Dual emitter-follower level shifter with matched hFE ensuring consistent rise/fall times across both directions. Use Value: Cc = 1.5 pF and fT = 100 MHz support clean 10 MHz signal translation without added propagation delay skew. |
| Dual-Stage Amplifier | Current Mirror Reference |
|
Use Scenario: Building compact two-stage audio preamplifiers in battery-powered medical sensors with <10 µA quiescent current targets. IC Role / Device Role / Timing Role: First-stage common-emitter amplifier and second-stage emitter follower buffer sharing matched hFE and thermal tracking. Use Value: Identical VBE (580–700 mV) and hFE spread enable precise DC bias point replication across stages, reducing offset drift. |
Use Scenario: Generating matched reference currents for precision ADC bias networks in automotive cabin controllers. IC Role / Device Role / Timing Role: Dual-transistor current mirror where TR1 sets reference current and TR2 replicates it with minimal ratio error. Use Value: Closely matched hFE and thermal resistance (Rth(j-sp) = 230 K/W) ensure <±2% current mismatch over −40 °C to +125 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847B,115 | Single NPN in SOT23; no dual functionality or pin compatibility | Requires two devices and extra PCB area for dual-channel use | Select only when discrete layout flexibility or higher individual IC margin (200 mA) is required. |
| MBT3904DW1T1G | Same dual-NPN SOT363 function but hFE range 100–300; higher VCE(sat) (≤400 mV) | Lower gain consistency and higher conduction loss in precision current mirrors | Prefer for cost-sensitive consumer applications where 30% gain tolerance and 100 mV higher VCE(sat) are acceptable. |
Compared with BC847B,115, the BC847BS,135 saves board space and eliminates matching uncertainty; versus MBT3904DW1T1G, it delivers tighter hFE matching and lower saturation loss - critical for analog signal chains and thermally constrained designs.
Availability
BC847BS,135 is available at Aetrix Electronics and suitable for LED driver pairs, level-shifting interfaces, dual-stage amplifiers, and current mirror references requiring stable component supply across industrial, medical, and test equipment programs.
Supply support for BC847BS,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The BC847BS,135 belongs to Nexperia's general-purpose bipolar transistor family, engineered specifically for space-constrained dual-transistor functions where gain matching, low saturation voltage, and thermal robustness are prioritized over ultra-high-speed or RF performance.
FAQ
What is the maximum continuous collector current per transistor in BC847BS,135?
The BC847BS,135 supports 100 mA continuous collector current per transistor under standard FR4 PCB conditions (Tamb ≤ 25 °C). At elevated ambient temperatures, derating applies: power dissipation drops to 220 mW at 25 °C, falling linearly to zero at 150 °C junction temperature.
Does BC847BS,135 support independent biasing of both transistors?
Yes - the BC847BS,135 provides fully isolated emitter, base, and collector terminals for each transistor (pins 1/2/6 for TR1; pins 4/5/3 for TR2), enabling independent DC bias networks, separate load connections, and zero internal coupling between channels.
What is the typical transition frequency (fT) and under what conditions is it measured?
The BC847BS,135 has a typical fT of 100 MHz, measured at VCE = 5 V, IC = 10 mA, and f = 100 MHz, with ambient temperature at 25 °C. This confirms usable bandwidth for audio and low-MHz digital signal conditioning without external compensation.
How does the thermal resistance of BC847BS,135 compare between per-transistor and per-device configurations?
Per-transistor Rth(j-a) is 568 K/W on standard FR4; per-device (both transistors) Rth(j-a) improves to 416 K/W due to shared thermal mass and optimized pad layout - meaning total device power handling increases while maintaining safe junction temperatures.
BC847BS,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 300mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BC847BS,135 FAQ
1.How can I place an order for BC847BS,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC847BS,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC847BS,135 reliable?
The price and inventory of BC847BS,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC847BS,135 is usually 5 days.
3.What payment methods are accepted for BC847BS,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC847BS,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC847BS,135?
BC847BS,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC847BS,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC847BS,135?
For technical support, including BC847BS,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC847BS,135 requirements.
6.How does Aetrix verify that BC847BS,135 is sourced from the original manufacturer or authorized distributors?
All BC847BS,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC847BS,135 meets industry standards.
7.What is the process for return or replacement of BC847BS,135?
All BC847BS,135 units undergo pre-shipment inspection (PSI). If there is an issue with BC847BS,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC847BS,135 part is unused and in its original packaging.
Return procedure for BC847BS,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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