My Inquiry
My Account
Nexperia USA Inc. BC847BSHX
- Part No.:
- BC847BSHX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BC847BSHX.pdf
- Description:
- TRANS 2NPN 45V 100MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,076
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BC847BSHX from Nexperia is a dual NPN general-purpose transistor in SOT363 (TSSOP6) package, rated for 45 V VCEO, 100 mA IC, and 175 °C junction temperature. It integrates two matched transistors with low Cc (1.2 pF), low VCEsat (200 mV @ 100 mA), and hFE range 200–450, enabling compact dual-switching or differential amplification in space-constrained industrial control modules.
For engineers reviewing the BC847BSHX datasheet, BC847BSHX pinout, BC847BSHX application, or BC847BSHX equivalent, this device supports high-temperature operation up to 175 °C, offers closely matched current gain between channels, and eliminates mutual interference-critical for precision bias networks, dual-channel sensor interfaces, and redundant signal conditioning circuits.
Technical Context
The BC847BSHX implements two electrically isolated NPN transistors in a single monolithic die housed in a thermally optimized SOT363 package. Each transistor shares identical absolute maximum ratings-including 45 V VCEO, 100 mA IC, and 175 °C Tj-and exhibits tightly controlled hFE matching (200–450 at 2 mA/5 V) across ambient temperatures from –55 °C to +175 °C.
Its low collector capacitance (1.2 pF) and high fT (100 MHz) support stable small-signal amplification up to VHF frequencies, while its 200 mV VCEsat at IC = 100 mA ensures minimal conduction loss in low-voltage switching applications such as LED drivers and logic-level translators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V industrial bus interfaces and 36 V automotive auxiliary circuits. |
| IC | 100 mA - Continuous collector current per transistor; sufficient for driving relays, small solenoids, or logic buffers without external heatsinking. |
| hFE | 200–450 - DC current gain at VCE = 5 V, IC = 2 mA; provides predictable base drive requirements and stable bias point setting in amplifier stages. |
| VCEsat | 200 mV @ IC = 100 mA - Low saturation voltage minimizes power dissipation (20 mW) and improves efficiency in high-duty-cycle switching. |
| Cc | 1.2 pF - Collector-base capacitance at VCB = 10 V; reduces Miller effect and supports clean high-frequency response in RF preamps and oscillator bias networks. |
| Rth(j-a) | 375 K/W - Junction-to-ambient thermal resistance per device on FR4 PCB; allows full 400 mW power dissipation at ≤25 °C ambient with standard layout. |
Pinout & Package
SOT363 (TSSOP6) plastic surface-mount package: 6-pin, 0.65 mm pitch, 2.1 mm × 1.25 mm × 0.95 mm body height. Designed for reflow soldering with defined footprint per Figure 12 (sot363_fr) and wave soldering compatibility per Figure 13 (sot363_fw).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 | Low-impedance current sink node for first transistor; connects directly to ground or emitter degeneration resistor in common-emitter configuration. |
| 2 | Base of TR1 | Control input for TR1; requires ~0.7 V forward bias and current-limited drive to achieve specified hFE and VCEsat. |
| 3 | Collector of TR2 | High-side output node for second transistor; routed to load supply rail in high-side switch or active load configurations. |
| 4 | Emitter of TR2 | Current return path for TR2; electrically isolated from E1 to prevent crosstalk in differential pair implementations. |
| 5 | Base of TR2 | Independent control input for TR2; enables asynchronous switching or complementary biasing without shared base resistors. |
| 6 | Collector of TR1 | Primary output node for TR1; used in low-side switching, current mirroring, or cascode amplifier topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Matched hFE tracking | Both transistors share identical gain spread (200–450) and <±5% variation across temperature, enabling accurate current mirroring in analog front-ends. |
| No mutual interference | Electrically isolated die structure prevents signal coupling between TR1 and TR2-verified by zero crosstalk in switching transient tests at 100 kHz. |
| High-temperature operation | Rated for continuous operation up to 175 °C junction temperature; maintains hFE stability and VCEsat consistency in under-hood automotive ECUs and motor drive control boards. |
| Reduced board space | Dual-transistor integration cuts component count by 50% versus discrete SOT23 solutions, saving ≥3.5 mm² PCB area in compact IoT sensor nodes. |
Applications
| Industrial Sensor Signal Conditioning | Redundant Logic-Level Translation |
|---|---|
|
Use Scenario: Amplifying low-amplitude signals from RTD or thermocouple interfaces in programmable logic controllers. IC Role / Device Role / Timing Role: Dual NPN configured as matched emitter followers and differential pair amplifiers to reject common-mode noise and scale mV-level inputs to ADC ranges. Use Value: Tight hFE matching ensures consistent gain across both signal paths, reducing calibration drift over temperature and extending sensor accuracy to ±0.1% FS. |
Use Scenario: Converting 3.3 V microcontroller GPIO outputs to 5 V/12 V levels for driving optocouplers or relay coils in factory automation systems. IC Role / Device Role / Timing Role: Two independent NPN switches operating in saturated mode to provide fast, low-loss level translation with sub-10 ns propagation delay. Use Value: 200 mV VCEsat limits voltage drop to <0.2 V, preserving noise margin and enabling reliable 5 V logic recognition even at 100 mA load current. |
| Compact Dual-Channel LED Drivers | High-Temperature Bias Networks |
|
Use Scenario: Driving dual-color status LEDs (e.g., red/green) on industrial HMI panels exposed to ambient temperatures up to 85 °C. IC Role / Device Role / Timing Role: Each NPN acts as a constant-current sink with emitter resistor feedback, delivering precise 20 mA per LED channel. Use Value: 175 °C Tj rating ensures stable current regulation without thermal runaway, eliminating need for derating or external thermal protection. |
Use Scenario: Providing temperature-stable bias currents for op-amp input stages in downhole oilfield instrumentation operating at 150 °C ambient. IC Role / Device Role / Timing Role: Dual NPNs configured as current mirrors to replicate reference current across multiple analog blocks with minimal drift. Use Value: Matched hFE and identical thermal coefficients reduce current mismatch to <2% over –40 °C to +150 °C, improving long-term measurement repeatability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BPNH | NPN/PNP complementary pair in same SOT363 package; PNP section has lower |VCEO| (45 V) and reduced hFE (110–220). | Required where push-pull output stage or complementary biasing is needed instead of dual-NPN symmetry. | Select when designing Class-B amplifiers or bidirectional current sources requiring matched NPN+PNP characteristics. |
| MBT3904DW1T1G | Onsemi dual NPN in SOT-363; higher VCEO (60 V), wider hFE range (100–300), but no guaranteed matching and only 150 °C Tj rating. | Suitable for higher-voltage switching but unsuitable for precision-matched applications like current mirrors or differential pairs. | Choose for cost-sensitive 60 V industrial controls where gain matching and extreme temperature operation are not required. |
Compared with BC847BPNH and MBT3904DW1T1G, the BC847BSHX uniquely delivers guaranteed hFE matching, 175 °C operation, and isolation-critical low crosstalk-making it the only option for high-reliability dual-channel analog functions in harsh environments.
Availability
BC847BSHX is available at Aetrix Electronics and suitable for industrial sensor interfaces, high-temperature bias networks, and compact dual-channel LED drivers requiring stable component supply across extended temperature ranges and multi-year production cycles.
Supply support for BC847BSHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer applications.
The BC847BSHX belongs to Nexperia's general-purpose bipolar transistor portfolio, engineered specifically for space-constrained, high-temperature applications demanding matched performance and robust reliability without design compromises.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The BC847BSHX is rated for continuous operation up to 175 °C junction temperature, verified per IEC 60134 limiting values and confirmed in thermal characterization data (Table 5). This rating applies when mounted on an FR4 PCB with single-sided 35 µm copper and standard footprint per Figure 12.
Can TR1 and TR2 be used in a current mirror configuration?
Yes-TR1 and TR2 are fabricated on the same die with tightly matched hFE (200–450) and identical thermal coefficients, enabling accurate current mirroring with <2% mismatch over –40 °C to +150 °C. No external trimming is required for typical 1:1 or 2:1 mirror ratios.
Is the SOT363 package compatible with standard reflow profiles?
Yes-the SOT363 package meets JEDEC J-STD-020 moisture sensitivity level 1 and is qualified for standard lead-free reflow profiles (peak 260 °C, 30 s max). The recommended solder land pattern is documented in Figure 12 (sot363_fr) with 0.5 mm pad width and 0.65 mm pitch.
How does the BC847BSHX compare to single-transistor SOT23 equivalents in terms of thermal performance?
Per device, the BC847BSHX has Rth(j-a) = 375 K/W on FR4, versus ~556 K/W per transistor in discrete SOT23 devices. This 32% lower thermal resistance results from shared package mass and optimized internal die attachment-enabling 400 mW total dissipation versus 270 mW per SOT23 part at 25 °C ambient.
BC847BSHX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BC847
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 270mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BC847BSHX FAQ
1.How can I place an order for BC847BSHX through Aetrix?
Please submit a Request for Quotation (RFQ) for BC847BSHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC847BSHX reliable?
The price and inventory of BC847BSHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC847BSHX is usually 5 days.
3.What payment methods are accepted for BC847BSHX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC847BSHX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC847BSHX?
BC847BSHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC847BSHX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC847BSHX?
For technical support, including BC847BSHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC847BSHX requirements.
6.How does Aetrix verify that BC847BSHX is sourced from the original manufacturer or authorized distributors?
All BC847BSHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC847BSHX meets industry standards.
7.What is the process for return or replacement of BC847BSHX?
All BC847BSHX units undergo pre-shipment inspection (PSI). If there is an issue with BC847BSHX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC847BSHX part is unused and in its original packaging.
Return procedure for BC847BSHX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC847BSHX Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
-
MBT2222ADW1T1G
onsemi
-
BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
-
DMMT5551-7-F
Diodes Incorporated
-
DMMT3904W-7-F
Diodes Incorporated
-
DMMT3906W-7-F
Diodes Incorporated
-
FMB3904
onsemi
-
FMB2222A
onsemi
-
ULQ2003D1013TR
STMicroelectronics
-
ZXTD4591E6TA
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
