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Nexperia USA Inc. BC847BV,115
- Part No.:
- BC847BV,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
BC847BV,115.pdf
- Description:
- TRANS 2NPN 45V 100MA SOT-666
- Quantity:
- Payment:
- Shipping:
Inventory:3,084
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Product details
Overview
BC847BV from Nexperia is an NPN general-purpose double transistor in a SOT666 ultra-thin surface-mount package, integrating two matched NPN transistors (TR1 and TR2) with VCEO = 45 V, IC = 100 mA per transistor, and hFE = 200–450 at IC = 2 mA. It replaces two discrete SC-75/SC-89 BISS transistors in compact signal switching and amplification circuits.
For engineers reviewing the BC847BV datasheet, BC847BV pinout, BC847BV application, or BC847BV equivalent, key selection criteria include dual-transistor integration in 1.6 mm × 1.2 mm footprint, low collector capacitance (1.5 pF), flat-lead coplanarity for reliable reflow soldering, and thermal resistance of 416 K/W (per device on FR4).
Technical Context
This dual NPN transistor is optimized for space-constrained general-purpose analog and digital functions where board area and pick-and-place cost reduction are critical. Each transistor operates independently with verified DC current gain (hFE) spanning 200–450 at 2 mA and maintaining ≥100 at 10 mA/0.5 mA drive.
Thermal performance is enhanced by flat leads improving heat conduction to PCB copper; Rth(j-a) is 416 K/W per device on standard FR4, significantly lower than typical SC-75 duals. Low Cc (1.5 pF) and Ce (11 pF) support stable high-frequency small-signal operation up to fT = 100 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum safe collector-emitter voltage per transistor with base open; defines voltage headroom in switching rails. |
| IC | 100 mA - Continuous collector current per transistor; supports medium-current logic interface and driver stages. |
| hFE | 200–450 - DC current gain at VCE = 5 V, IC = 2 mA; enables precise biasing in amplifier and switch configurations. |
| Cc | 1.5 pF - Collector capacitance at VCB = 10 V; minimizes Miller effect in high-speed switching nodes. |
| Rth(j-a) | 416 K/W - Junction-to-ambient thermal resistance per device on FR4 PCB; enables higher power density vs. SC-75 alternatives. |
| VCE(sat) | 300 mV - Saturation voltage at IC = 100 mA, IB = 5 mA; ensures low conduction loss in saturated switch applications. |
| fT | 100 MHz - Transition frequency at VCE = 5 V, IC = 10 mA; supports RF front-end and broadband amplifier use up to ~10 MHz. |
Pinout & Package
SOT666 is a 6-lead, 0.5 mm pitch, ultra-thin (0.55 mm height) flat-lead plastic package measuring 1.6 mm × 1.2 mm. Straight leads ensure excellent coplanarity for automated assembly and reliable solder joint formation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 | Low-impedance current sink node for first transistor; connects directly to ground or emitter resistor in common-emitter stage. |
| 2 | Base of TR1 | Control input for TR1; requires current-limited drive (e.g., via 10 kΩ resistor) to achieve target hFE-based gain. |
| 3 | Collector of TR2 | High-side output node for second transistor; used as active load or switched rail in complementary pair configurations. |
| 4 | Emitter of TR2 | Independent emitter reference for TR2; allows separate biasing or current mirroring without shared emitter degeneration. |
| 5 | Base of TR2 | Dedicated control terminal for TR2; enables independent switching or cascaded amplification without cross-coupling. |
| 6 | Collector of TR1 | Main output node for TR1; routed to load or next-stage input; layout must minimize trace inductance for fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN integration | Two electrically isolated NPN transistors in one SOT666 footprint-reduces component count and eliminates matching variance between discrete devices. |
| Ultra-small package | 1.6 mm × 1.2 mm × 0.55 mm body size-enables >40% board space savings versus two SC-75 packages and simplifies high-density routing. |
| Flat-lead thermal design | Enhanced thermal coupling to PCB copper-delivers 416 K/W Rth(j-a), enabling sustained 200 mW total dissipation without derating at 25 °C ambient. |
| Low collector capacitance | 1.5 pF typical Cc-minimizes capacitive loading on driving stages and improves rise/fall time in digital switching applications. |
| Verified coplanarity | Straight lead geometry ensures ≤0.1 mm lead height variation-eliminates tombstoning risk and improves first-pass yield in reflow processes. |
Applications
| LED Driver Circuit | Level-Shifting Interface |
|---|---|
Use Scenario: Driving multiple indicator LEDs from 3.3 V microcontroller GPIO pins with current limiting. IC Role / Device Role / Timing Role: Dual NPN configured as two independent saturated switches, each controlling one LED path with 10–20 mA sink current. Use Value: Eliminates need for two separate SOT-23 transistors; reduces BOM count, PCB area, and placement cost while maintaining consistent VCE(sat) < 300 mV. |
Use Scenario: Translating 1.8 V logic signals to 5 V domains in mixed-voltage MCU systems. IC Role / Device Role / Timing Role: One transistor acts as a level-shifter pull-up driver, the other as a feedback-controlled enable gate for bidirectional translation. Use Value: Matched hFE and VBE across TR1/TR2 ensures symmetrical turn-on/turn-off timing and <10 ns propagation skew between channels. |
| Current Mirror Reference | Audio Preamp Stage |
Use Scenario: Generating precision bias currents for op-amp input stages or sensor conditioning circuits. IC Role / Device Role / Timing Role: Two transistors wired in monolithic current mirror configuration with shared base connection and emitter resistors. Use Value: Intra-die matching improves current ratio accuracy to ±3% over temperature, outperforming discrete SC-75 pairs with ±10% mismatch. |
Use Scenario: Low-noise preamplification of electret microphone outputs in portable audio devices. IC Role / Device Role / Timing Role: First transistor as common-emitter gain stage (RC/RE biased), second as emitter-follower buffer for low-Z output drive. Use Value: Integrated dual structure minimizes inter-stage parasitic capacitance, preserving bandwidth up to 20 kHz with THD < 0.5% at 1 Vpp. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847B,115 | Single NPN in SOT23; identical per-transistor specs but no dual integration. | Requires two placements and routing; increases board area by ~2.5× and assembly cost. | Select when only one transistor is needed per location or when legacy SOT23 footprint compatibility is mandatory. |
| BC847C,115 | Single NPN with hFE = 420–800 (higher gain band); same SOT23 package. | Lacks dual functionality; higher hFE may cause instability in feedback circuits without redesign. | Choose only for single-transistor high-gain amplification where gain consistency >400 is required and dual integration is unnecessary. |
Compared with BC847B,115 and BC847C,115, the BC847BV delivers unique value through dual-device integration in ultra-compact SOT666-reducing component count, board area, and thermal resistance by 35% versus two discrete SOT23s, while maintaining identical per-transistor electrical behavior.
Availability
BC847BV is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, and current mirror references requiring stable component supply, tight parametric matching, and ultra-compact packaging.
Supply support for BC847BV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer applications.
The BC847BV belongs to Nexperia's general-purpose bipolar transistor product line, engineered specifically to reduce board space and assembly cost in high-density analog and digital signal-path designs.
FAQ
What is the maximum continuous power dissipation for BC847BV?
The BC847BV has a total power dissipation rating of 300 mW per device at Tamb ≤ 25 °C on a standard FR4 PCB with single-sided copper. This is achieved through its flat-lead SOT666 package, which lowers thermal resistance to 416 K/W-enabling higher power density than conventional dual-transistor solutions.
Can BC847BV be used in linear amplifier applications?
Yes-BC847BV supports linear operation with verified hFE stability from −55 °C to 150 °C and low VBE variation (580–700 mV at IC = 2 mA). Its 100 MHz fT and 1.5 pF Cc allow stable small-signal amplification up to 20 kHz with minimal distortion in common-emitter configurations.
Is BC847BV pin-compatible with BC857BV?
No-BC857BV is the PNP complement with identical SOT666 package and pinout, but opposite polarity: its pin 1 is C1 (not E1), pin 2 is B1, pin 3 is E2, etc. Direct substitution would reverse transistor function; they are designed for complementary pairing, not drop-in replacement.
What soldering method is recommended for BC847BV?
Reflow soldering is the only recommended method per Nexperia's datasheet. The SOT666 package is qualified for standard lead-free reflow profiles (J-STD-020), and wave or hand soldering is not supported due to thermal stress risks and potential lead damage from non-uniform heating.
BC847BV,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 300mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
BC847BV,115 FAQ
1.How can I place an order for BC847BV,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC847BV,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC847BV,115 reliable?
The price and inventory of BC847BV,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC847BV,115 is usually 5 days.
3.What payment methods are accepted for BC847BV,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC847BV,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC847BV,115?
BC847BV,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC847BV,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC847BV,115?
For technical support, including BC847BV,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC847BV,115 requirements.
6.How does Aetrix verify that BC847BV,115 is sourced from the original manufacturer or authorized distributors?
All BC847BV,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC847BV,115 meets industry standards.
7.What is the process for return or replacement of BC847BV,115?
All BC847BV,115 units undergo pre-shipment inspection (PSI). If there is an issue with BC847BV,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC847BV,115 part is unused and in its original packaging.
Return procedure for BC847BV,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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