Diodes Incorporated BC847BVC-7

Overview

BC847BVC-7 from Diodes Incorporated is an AEC-Q101-qualified NPN dual small-signal transistor in SOT563 package, with V_CEO = 45 V, h_FE = 200–450 (at I_C = 2 mA), and f_T = 100 MHz - used for discrete amplification and switching in automotive sensor interfaces and power management circuits.

For engineers reviewing the BC847BVC-7 datasheet, BC847BVC-7 pinout, BC847BVC-7 application, or BC847BVC-7 equivalent, key selection criteria include dual-transistor integration in ultra-small SOT563, AEC-Q101 qualification, guaranteed h_FE range, ESD robustness (HBM 4 kV), and thermal derating behavior up to +150°C ambient.

Technical Context

This dual NPN transistor shares a common substrate in a single SOT563 package, enabling matched gain and thermal tracking for differential pair or current mirror configurations. Its 45 V V_CEO, 100 mA I_C, and 150 mW P_D support low-power linear and saturated switching in space-constrained automotive modules.

The device features ultra-low thermal resistance (R_θJA = 833°C/W on FR-4), 6 V V_EBO, and 4.5 pF C_OBO at 10 V - optimized for stable biasing and RF-capable signal conditioning up to 100 MHz in cost-sensitive embedded control nodes.

Key Specifications

Pinout & Package

SOT563 is a 6-pin ultra-small surface-mount package (1.6 mm × 1.2 mm × 0.6 mm) with exposed pad for thermal enhancement and dual-transistor layout. Pin numbering follows top-view orientation per Diodes DS30638 Rev. 6-2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Compared with BC847BVC-7, BC847B,115 increases layout complexity and degrades matching, while MBT3904DW1T1G sacrifices automotive reliability and voltage margin - making BC847BVC-7 optimal for space- and specification-critical AEC-Q101 designs.

Availability

BC847BVC-7 is available at Aetrix Electronics and suitable for automotive cabin electronics, industrial PLC input stages, USB-C power delivery monitors, and medical infusion pump motor drivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BC847BVC-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The BC847BVC belongs to Diodes' AEC-Q101-qualified small-signal transistor product line, engineered specifically for automotive signal conditioning, sensor interfacing, and power control where reliability, thermal stability, and space efficiency are critical.

FAQ

Is BC847BVC-7 pin-compatible with BC847BW or BC847C variants?

No. BC847BVC-7 uses SOT563 (6-pin dual), while BC847BW is SOT323 (3-pin single) and BC847C is SOT23 (3-pin single). The pin count, pinout, and internal topology differ fundamentally - direct substitution would require PCB redesign and circuit validation.

What is the maximum allowable base current for reliable saturation at I_C = 100 mA?

Per DS30638, V_CE(SAT) ≤ 300 mV is guaranteed at I_C = 100 mA with I_B = 5 mA. Therefore, minimum forced β = 20 is required. Exceeding 5 mA base current offers diminishing returns and risks excessive power dissipation in the base region without improving saturation.

Does BC847BVC-7 support pulsed operation beyond its DC ratings?

Yes - electrical characteristics like h_FE and V_CE(SAT) are measured under pulsed conditions (≤300 µs pulse width, ≤2% duty cycle). For pulsed I_C > 100 mA, ensure peak power remains within 150 mW limit and junction temperature stays below +150°C using thermal modeling and derating curves from Figure 1.

How does the SOT563 package affect thermal performance compared to SOT23?

SOT563 has higher R_θJA (833°C/W) than typical SOT23 (≈600°C/W) due to smaller copper area and thinner mold compound. However, its dual-die integration reduces total thermal mass and improves inter-transistor thermal coupling - beneficial for matched analog functions despite higher absolute θ_JA.