Diodes Incorporated BC847BVN-7

Overview

BC847BVN-7 from Diodes Incorporated is a complementary NPN/PNP small-signal transistor pair in a single SOT563 package, rated for 45 V V_CEO, 100 mA I_C, and featuring h_FE of 200–450 (NPN) and 220–475 (PNP). It delivers matched gain characteristics, ultra-small footprint, and operates across –55°C to +150°C - ideal for space-constrained biasing and signal inversion circuits in portable power management.

For engineers reviewing the BC847BVN-7 datasheet, BC847BVN-7 pinout, BC847BVN-7 application, or BC847BVN-7 equivalent, key selection criteria include complementary device matching, SOT563 thermal performance (R_θJA = 833°C/W), dual-transistor isolation integrity, and automotive-grade reliability validation (via BC847BVNQ variant).

Technical Context

This dual-transistor device integrates electrically isolated BC847B (NPN) and BC857B (PNP) die in one SOT563 package, enabling compact push-pull, differential pair, and level-shifting topologies without inter-device layout coupling. Its epitaxial construction ensures consistent f_T (100–300 MHz for NPN; 100–200 MHz for PNP) and low C_obo (3.0–6.0 pF).

Thermal design relies on FR-4 PCB mounting with 1 oz copper; power dissipation de-rates linearly from 150 mW at 25°C to zero at 150°C ambient. The device supports pulse operation up to 200 mA I_CM/I_EM, with V_CE(sat) ≤ 250 mV (NPN) and ≤ –250 mV (PNP) at I_C = 10 mA / I_B = 0.5 mA.

Key Specifications

Pinout & Package

Package: SOT563 - ultra-compact 6-pin surface-mount package (1.60 mm × 1.60 mm × 0.60 mm), lead-free, halogen-free, and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary small-signal transistor pair applications.

Compared with BC847BVN-7, BC847BPDW1T1G offers comparable packaging but reduced PNP gain assurance, while MBT3904DW1T1G lacks true complementarity - making BC847BVN-7 uniquely suited for thermally matched, space-constrained dual-polarity switching where gain symmetry and die isolation are critical.

Availability

BC847BVN-7 is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, and differential amplifier bias networks requiring stable component supply, tight parametric matching, and long-term obsolescence resilience.

Supply support for BC847BVN-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for industrial, computing, and automotive markets.

The BC847BVN belongs to Diodes' small-signal transistor portfolio, engineered specifically for space-constrained, thermally demanding applications requiring matched complementary behavior and extended temperature operation.

FAQ

What is the maximum junction temperature for BC847BVN-7?

The absolute maximum junction temperature is +150°C, aligned with its specified operating temperature range of –55°C to +150°C. Derating begins at +25°C ambient per the 833°C/W thermal resistance curve; sustained operation above +125°C junction requires active thermal monitoring or reduced bias current.

Is BC847BVN-7 qualified for automotive applications?

The BC847BVN-7 itself is not AEC-Q101 qualified; however, the functionally identical BC847BVNQ variant is explicitly designed and tested for automotive use per AEC-Q101 standards, with identical electrical specs and SOT563 packaging - recommended for under-hood and ADAS subsystems.

How does the internal isolation between Q1 and Q2 affect circuit performance?

Internal isolation prevents electrical crosstalk and thermal coupling between the NPN and PNP transistors, preserving independent gain stability and preventing unintended signal injection - essential for precision current mirrors, differential amplifiers, and noise-critical sensor front-ends where shared substrate paths would degrade CMRR or introduce offset drift.

Can BC847BVN-7 replace two separate SOT-23 transistors in existing designs?

Yes - with layout adaptation: the SOT563 footprint differs from dual-SOT23, requiring updated land patterns and routing. Electrical substitution is direct (pin 1–3 = NPN, pins 4–6 = PNP), but thermal performance improves due to shared package thermal mass, allowing higher combined dissipation than two discrete SOT-23 devices on the same board area.