Infineon Technologies BC847PNE6433BTMA1
- Part No.:
- BC847PNE6433BTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BC847PNE6433BTMA1.pdf
- Description:
- TRANS NPN/PNP 45V PG-SOT363-PO
- Quantity:
- Payment:

- Shipping:

Inventory:9,572
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Product details
Overview
BC847PNE6433BTMA1 from Nexperia is a dual NPN/PNP silicon small-signal transistor array in a single SOT363 (SC74) package, configured as two galvanically isolated transistors for complementary switching or push-pull driver stages. It delivers VCEO = 45 V (NPN), VCEO = 65 V (PNP), hFE up to 450 at IC = 2 mA, and VCE(sat) ≤ 300 mV at IC = 10 mA / IB = 0.5 mA - used in automotive AF input stages, level-shifting interfaces, and discrete logic inverters.
For engineers reviewing the BC847PNE6433BTMA1 datasheet, BC847PNE6433BTMA1 pinout, BC847PNE6433BTMA1 application, or BC847PNE6433BTMA1 equivalent, this page provides verified pin mapping, thermal derating curves, hFE vs. IC behavior, VCE(sat) performance under pulsed load, and AEC-Q101-qualified reliability data for automotive-grade design validation.
Technical Context
This device integrates one NPN (BC847PN) and one PNP (BC846PN) transistor with independent terminals and no internal connection between them - enabling true complementary operation without cross-conduction risk. Its matched hFE spread (200–450) and low VBE(sat) (700–900 mV) support precise current mirroring and rail-to-rail output swing in Class-A/B amplifier inputs.
The SOT363 package provides dual-transistor functionality in 2.9 mm × 1.9 mm footprint with RthJS ≤ 140 K/W, supporting continuous IC = ±100 mA operation at TS ≤ 115 °C. Pulse capability extends to ICM = ±200 mA (tp ≤ 10 ms, D = 2%), validated per JEDEC JESD22-A108.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO (NPN) | 45 V - supports 3.3 V/5 V logic-level signal amplification with 2× safety margin against 24 V automotive supply transients |
| VCEO (PNP) | 65 V - enables high-side switching in 48 V industrial power rails with headroom for inductive kickback |
| hFE @ IC = 2 mA | 200–450 - ensures stable biasing across temperature for discrete op-amp input pairs and current sources |
| VCE(sat) @ IC = 10 mA | ≤ 300 mV - minimizes conduction loss in low-voltage logic translators and LED drivers |
| fT | 250 MHz - sufficient for audio-frequency amplification (20 Hz–20 kHz) with >100× gain-bandwidth margin |
| RthJS | ≤ 140 K/W - allows direct PCB copper pour heatsinking without external thermal vias in space-constrained modules |
Pinout & Package
Package: SOT363 (SC74), 6-pin plastic surface-mount package with gull-wing leads, 0.65 mm pitch, 2.9 mm × 1.9 mm body, 1.1 mm max height, RoHS-compliant matte tin lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (E1) | Emitter of NPN transistor (TR1) | Reference node for NPN emitter-follower or common-emitter configuration; tied to ground or local reference |
| 2 (B1) | Base of NPN transistor (TR1) | Control input for NPN switch/amplifier; requires current-limiting resistor when driven by CMOS logic |
| 3 (C2) | Collector of PNP transistor (TR2) | High-side output node; connects to positive rail in sourcing applications |
| 4 (E2) | Emitter of PNP transistor (TR2) | Reference node for PNP stage; typically connected to VCC in high-side drivers |
| 5 (B2) | Base of PNP transistor (TR2) | Inverted control input; active-low enable for PNP switch or complementary base drive |
| 6 (C1) | Collector of NPN transistor (TR1) | Low-side output node; sinks current to ground in open-collector or totem-pole configurations |
Key Features
| Feature | Design Value |
|---|---|
| Galvanic isolation between NPN and PNP | Zero internal connection - eliminates crosstalk in differential pair biasing and prevents latch-up in bidirectional switches |
| AEC-Q101 qualification | Validated for automotive ambient temperatures (−40 °C to +125 °C) and mechanical shock/vibration per ISO 16750 |
| Matched hFE range | 200–450 for both transistors - simplifies symmetric circuit design without individual binning or trimming |
| Pulse current rating | ICM = 200 mA (tp ≤ 10 ms) - supports short-duration surge handling in relay coil drivers and solenoid interfaces |
Applications
| Automotive Door Module Driver | Industrial IO-Link Sensor Interface |
|---|---|
Use Scenario: Driving window lift motor direction control via H-bridge gate signals in door control units. IC Role / Device Role / Timing Role: Dual transistor pair provides complementary level-shifted gate drive for NMOS/PMOS half-bridge FETs. Use Value: Low VCE(sat) reduces heat generation during 100% duty-cycle operation; AEC-Q101 ensures 15-year field reliability. | Use Scenario: Converting 24 V industrial bus voltage to 3.3 V logic levels for microcontroller input in smart sensors. IC Role / Device Role / Timing Role: NPN/PNP pair forms discrete level translator with rail-to-rail swing and fast edge response. Use Value: fT = 250 MHz ensures <10 ns propagation delay; matched hFE maintains consistent threshold across temperature. |
| Audio Pre-amplifier Input Stage | Medical Patient Monitor Signal Conditioning |
Use Scenario: First-stage amplification of microphone signals before ADC sampling in portable ultrasound devices. IC Role / Device Role / Timing Role: NPN common-emitter amplifier with PNP active load for high-gain, low-noise front-end. Use Value: hFE ≥ 200 at IC = 10 µA enables ultra-low quiescent current (<50 µA) while maintaining SNR > 85 dB. | Use Scenario: Isolating ECG electrode signals from noisy digital subsystems using discrete optocoupler driver circuits. IC Role / Device Role / Timing Role: PNP transistor drives LED anode; NPN transistor controls cathode sink path for precise current regulation. Use Value: Galvanic isolation between transistors prevents leakage paths that compromise patient safety creepage/clearance requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual complementary transistor array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BDW1T1G | Same SOT363 package but NPN/NPN configuration; hFE = 200–450, VCEO = 45 V only | Not suitable for push-pull or complementary switching; limited to dual NPN functions like current mirrors | Select only if circuit requires identical polarity transistors and no high-side sourcing capability |
| MBT3904DW1T1G | Higher VCEO = 40 V (NPN), no PNP; fT = 300 MHz; RthJS = 125 K/W | Lacks complementary PNP element - cannot replace BC847PNE6433BTMA1 in totem-pole or level-shifter topologies | Use only for high-frequency NPN-only amplification where PNP functionality is absent in design |
Compared with BC847BDW1T1G and MBT3904DW1T1G, BC847PNE6433BTMA1 uniquely delivers matched NPN+PNP operation in one die, enabling compact, thermally balanced complementary circuits without inter-device layout mismatch or thermal drift.
Availability
BC847PNE6433BTMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor signal conditioning, medical device analog front-ends, and consumer audio pre-amplifiers requiring stable component supply and long-term lifecycle continuity.
Supply support for BC847PNE6433BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient packaging.
This part belongs to Nexperia's BC846/BC847PN family of AEC-Q101-qualified dual transistor arrays designed specifically for automotive signal conditioning, industrial interface translation, and medical-grade analog circuitry where galvanic isolation and thermal symmetry are critical.
FAQ
What is the maximum continuous collector current per transistor?
The BC847PNE6433BTMA1 supports IC = 100 mA per transistor at TS ≤ 115 °C. Derating is required above this case temperature: Ptot decreases linearly to zero at 150 °C junction temperature. The absolute maximum peak current is 200 mA for pulses ≤ 10 ms with duty cycle ≤ 2%, as confirmed in the manufacturer's permissible pulse load graph.
Is pin 1 orientation defined in tape-and-reel packaging?
No - the datasheet explicitly states "for symmetric types no defined Pin 1 orientation in reel." Visual identification must be performed using the laser-marked dot or notch on the package body. Orientation verification is required during automated placement setup, especially for dual-transistor arrays where misalignment causes functional failure.
Does this device support operation at −55 °C?
No - the specified storage temperature range is −65 °C to +150 °C, but the operational ambient temperature range is −55 °C to +150 °C only for AEC-Q101 stress testing. The guaranteed operating range is −40 °C to +125 °C per datasheet Section 1, and electrical characteristics are not characterized below −40 °C.
How does the thermal resistance RthJS compare between BC847PN and BC846UPN variants?
BC847PN has RthJS ≤ 140 K/W; BC846UPN has RthJS ≤ 130 K/W due to optimized internal die attach. This 10 K/W difference reflects tighter thermal coupling in the UPN variant, allowing ~7% higher continuous power dissipation at identical case temperature - relevant only when mixing variants in same design.
BC847PNE6433BTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 250mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BC847PNE6433BTMA1 FAQ
1.How can I place an order for BC847PNE6433BTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC847PNE6433BTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC847PNE6433BTMA1 reliable?
The price and inventory of BC847PNE6433BTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC847PNE6433BTMA1 is usually 5 days.
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BC847PNE6433BTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC847PNE6433BTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC847PNE6433BTMA1?
For technical support, including BC847PNE6433BTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC847PNE6433BTMA1 requirements.
6.How does Aetrix verify that BC847PNE6433BTMA1 is sourced from the original manufacturer or authorized distributors?
All BC847PNE6433BTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC847PNE6433BTMA1 meets industry standards.
7.What is the process for return or replacement of BC847PNE6433BTMA1?
All BC847PNE6433BTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC847PNE6433BTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC847PNE6433BTMA1 part is unused and in its original packaging.
Return procedure for BC847PNE6433BTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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