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Infineon Technologies BC847PNH6327XTSA1
- Part No.:
- BC847PNH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BC847PNH6327XTSA1.pdf
- Description:
- TRANS NPN/PNP 45V PG-SOT363-PO
- Quantity:
- Payment:
- Shipping:
Inventory:9,464
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Product details
Overview
BC847PNH6327XTSA1 from Infineon Technologies is a dual NPN/PNP silicon bipolar transistor array in a single SOT-363 (SC-74) package, designed for audio-frequency input stage and driver applications. It features high DC current gain (hFE = 200–450 at IC = 2 mA), low VCE(sat) (max 300 mV at IC = 10 mA, IB = 0.5 mA), and AEC-Q101 qualification for automotive use.
For engineers reviewing the BC847PNH6327XTSA1 datasheet, BC847PNH6327XTSA1 pinout, BC847PNH6327XTSA1 application, or BC847PNH6327XTSA1 equivalent, key selection criteria include complementary transistor pairing, galvanic isolation between TR1 and TR2, VCEO = 45 V (NPN) / 65 V (PNP), thermal resistance RthJS ≤ 140 K/W, and RoHS-compliant Pb-free packaging.
Technical Context
This dual transistor array integrates electrically isolated NPN (TR1) and PNP (TR2) devices sharing no internal connection-enabling push-pull, phase-splitter, or complementary switching topologies. Each transistor supports independent biasing with verified VBRCEO, hFE, and fT = 250 MHz (NPN) performance at 25 °C.
The device operates across –65 °C to +150 °C junction temperature range, with maximum power dissipation of 250 mW at TS ≤ 115 °C. Its SOT-363 footprint enables compact board layout while maintaining thermal separation between transistors via shared leadframe design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO (NPN) | 45 V - Maximum safe collector-emitter voltage before breakdown in NPN section |
| VCEO (PNP) | 65 V - Maximum safe collector-emitter voltage before breakdown in PNP section |
| hFE (IC = 2 mA) | 200–450 - Ensures stable current amplification in linear AF amplifier stages |
| VCE(sat) (IC = 10 mA) | ≤ 300 mV - Minimizes conduction loss in switching/driver configurations |
| fT | 250 MHz - Supports high-fidelity AF signal handling up to ~100 kHz with margin |
| RthJS | ≤ 140 K/W - Enables reliable thermal management on standard FR-4 PCBs |
| AEC-Q101 Qualified | Yes - Validated for automotive under-hood and body-control module environments |
Pinout & Package
SOT-363 (SC-74) surface-mount package with 6-pin configuration and gull-wing leads. Pin 1 marked by dot or bevel; moisture sensitivity level (MSL) 1 per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (E1) | Emitter of NPN transistor (TR1) | Primary current sink node for NPN half of complementary pair |
| 2 (B1) | Base of NPN transistor (TR1) | Control input for NPN section; requires external base resistor for biasing |
| 3 (C2) | Collector of PNP transistor (TR2) | Current source node for PNP half; connects to positive rail in push-pull output |
| 4 (E2) | Emitter of PNP transistor (TR2) | Primary current source node for PNP section |
| 5 (B2) | Base of PNP transistor (TR2) | Control input for PNP section; polarity inverted relative to NPN base |
| 6 (C1) | Collector of NPN transistor (TR1) | Current sink node for NPN half; connects to load or next stage input |
Key Features
| Feature | Design Value |
|---|---|
| Galvanically isolated NPN/PNP pair | Enables true complementary operation without internal coupling-critical for Class-B/AB audio drivers |
| Low VCE(sat) and VBE(sat) | Reduces voltage headroom loss and improves efficiency in battery-powered AF stages |
| AEC-Q101 qualification | Validates reliability for automotive infotainment, lighting control, and sensor interface modules |
| Pb-free RoHS-compliant construction | Meets global environmental compliance requirements without compromising thermal or electrical performance |
Applications
| Audio Amplifier Input Stage | Automotive LED Driver |
|---|---|
Use Scenario: Low-noise preamplifier input buffer in car radio front-end circuits. IC Role / Device Role / Timing Role: Dual-transistor differential pair providing balanced gain and common-mode rejection. Use Value: High hFE and low Ccb (1.5 pF) preserve signal integrity up to 20 kHz with minimal distortion. | Use Scenario: Constant-current sink/source driver for interior ambient lighting PWM dimming. IC Role / Device Role / Timing Role: Complementary switch controlling LED anode/cathode paths in bidirectional current regulation. Use Value: Matched VCE(sat) and thermal tracking between NPN/PNP ensure symmetrical turn-on/turn-off timing. |
| Push-Pull Signal Buffer | Industrial Sensor Interface |
Use Scenario: Output stage buffering microcontroller GPIO signals to drive capacitive loads (e.g., display backlight). IC Role / Device Role / Timing Role: NPN/PNP pair configured as emitter follower for low-impedance sourcing/sinking. Use Value: Galvanic isolation prevents shoot-through; 200 mA peak current capability handles transient load demands. | Use Scenario: Level-shifting and signal conditioning for thermistor or potentiometer inputs in HVAC control units. IC Role / Device Role / Timing Role: Discrete transistor pair implementing precision current mirror or voltage-to-current conversion. Use Value: Tight hFE distribution (200–450) and low VBE(ON) drift support <±1% analog accuracy over –40 °C to +125 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary transistor array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BPDW1T1G | Higher hFE bin (380–630), same SOT-363 package, identical pinout | Better suited for low-base-drive designs requiring higher current gain | Select when minimizing base current is critical and tighter hFE tolerance is needed |
| MBT3904DW1T1G | NPN/NPN dual only; no PNP section; lower VCEO (40 V); fT = 300 MHz | Limited to NPN-only topologies like Darlington drivers or logic-level translators | Choose only if complementary operation is not required and higher fT is prioritized |
Compared with BC847PNH6327XTSA1, BC847BPDW1T1G offers superior gain consistency for precision biasing, while MBT3904DW1T1G sacrifices complementarity for higher frequency response-neither provides galvanic isolation between transistor sections like the Infineon part.
Availability
BC847PNH6327XTSA1 is available at Aetrix Electronics and suitable for automotive lighting control, audio signal conditioning, industrial sensor interfaces, and consumer electronics requiring stable component supply with AEC-Q101 assurance.
Supply support for BC847PNH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.
The BC847PN series belongs to Infineon's discrete bipolar transistor portfolio, engineered specifically for space-constrained, high-reliability AF and switching applications in automotive and industrial systems.
FAQ
What is the maximum operating junction temperature for BC847PNH6327XTSA1?
The absolute maximum junction temperature is 150 °C, validated per AEC-Q101 stress testing. Operation above this limit risks permanent degradation of hFE and increased leakage. Thermal design must maintain Tj ≤ 150 °C using RthJS ≤ 140 K/W and appropriate PCB copper area.
Is BC847PNH6327XTSA1 pin-compatible with BC846PNH6327XTSA1?
Yes-both share identical SOT-363 pinout and marking convention (E1, B1, C2, E2, B2, C1). However, BC846PN has higher VCEO (65 V vs. 45 V for BC847PN NPN), so substitution requires verifying voltage margin in the target circuit.
Does BC847PNH6327XTSA1 support pulsed operation beyond its DC power rating?
Yes-permissible pulse load curves show Ptot(max)/Ptot(DC) up to 10× for tp ≤ 10 µs (duty cycle D = 0.005). This enables short-duration surge handling in LED flash or motor commutation circuits without thermal runaway.
How does the galvanic isolation between TR1 and TR2 impact circuit design?
It eliminates internal crosstalk and allows fully independent bias networks for NPN and PNP sections-essential for precision push-pull amplifiers where mismatched base currents would cause quiescent current drift or crossover distortion.
BC847PNH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 250mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BC847PNH6327XTSA1 FAQ
1.How can I place an order for BC847PNH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC847PNH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC847PNH6327XTSA1 reliable?
The price and inventory of BC847PNH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC847PNH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BC847PNH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC847PNH6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC847PNH6327XTSA1?
BC847PNH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC847PNH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC847PNH6327XTSA1?
For technical support, including BC847PNH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC847PNH6327XTSA1 requirements.
6.How does Aetrix verify that BC847PNH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BC847PNH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC847PNH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BC847PNH6327XTSA1?
All BC847PNH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC847PNH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC847PNH6327XTSA1 part is unused and in its original packaging.
Return procedure for BC847PNH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC847PNH6327XTSA1 Tags
-
MBT3946DW1T1G
onsemi
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BC846BPDW1T1G
onsemi
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MBT2222ADW1T1G
onsemi
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BC847BDW1T1G
onsemi
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DMMT5401-7-F
Diodes Incorporated
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DMMT5551-7-F
Diodes Incorporated
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DMMT3904W-7-F
Diodes Incorporated
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DMMT3906W-7-F
Diodes Incorporated
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FMB3904
onsemi
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FMB2222A
onsemi
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ULQ2003D1013TR
STMicroelectronics
-
ZXTD4591E6TA
Diodes Incorporated
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