My Inquiry
My Account
NXP Semiconductors BC847QAPN147
- Part No.:
- BC847QAPN147
- Manufacturer:
- NXP Semiconductors
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
BC847QAPN147.pdf
- Description:
- TRANS NPN/PNP 45V 0.1A DFN1010B
- Quantity:
- Payment:
- Shipping:
Inventory:2,967
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BC847QAPN from Nexperia is a dual NPN/PNP general-purpose transistor pair in a leadless DFN1010B-6 (SOT1216) package, rated for 45 V VCEO, 100 mA IC, and DC current gain (hFE) of 200–450 at 2 mA/5 V. It serves as a compact, AEC-Q101-qualified switching and amplification solution in space-constrained automotive and mobile PCBs.
For engineers reviewing the BC847QAPN datasheet, BC847QAPN pinout, BC847QAPN application, or BC847QAPN equivalent, key selection considerations include its dual complementary topology, ultra-thin 0.37 mm profile, thermal resistance of 357 K/W (per device), and suitability for low-voltage biasing and signal inversion in battery-powered systems.
Technical Context
The BC847QAPN integrates one NPN (TR1) and one PNP (TR2) transistor in a single monolithic die, sharing no internal connection between devices-each operates independently with separate emitter, base, and collector terminals. Pin configuration supports discrete-level control of both polarities without cross-coupling.
It operates within −55 °C to 150 °C ambient range, with junction temperature limited to 150 °C and thermal resistance (Rth(j-a)) of 357 K/W when mounted on FR4 PCB. Saturation voltages are specified at pulsed conditions (VCE(sat) ≤ 300 mV at IC = 100 mA, IB = 5 mA), enabling efficient low-power switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V maximum - supports rail-to-rail switching in 3.3 V and 5 V logic domains with margin against transients. |
| IC | 100 mA continuous - sufficient for LED drivers, small-signal relays, and sensor interface biasing. |
| hFE | 200–450 at 2 mA/5 V - enables stable current amplification in linear and active-region biasing circuits. |
| VCE(sat) | ≤300 mV at IC=100 mA, IB=5 mA - minimizes conduction loss and self-heating in high-duty-cycle switching. |
| fT | 100 MHz - supports audio-frequency amplification and fast digital signal inversion up to ~10 MHz. |
| Rth(j-a) | 357 K/W (per device on FR4) - defines thermal derating slope: power must be reduced by ~2.8 mW/°C above 25 °C ambient. |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JESD22. |
Pinout & Package
Package: DFN1010B-6 (SOT1216), 1.05 × 1.05 mm footprint, 0.37 mm height, thermally enhanced plastic body with exposed pad (not electrically connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of NPN transistor TR1 - connects to ground or low-side return path in common-emitter switches. |
| 2 | B1 | Base of NPN transistor TR1 - requires current-limited drive (e.g., 1–10 kΩ series resistor) for saturation control. |
| 3 | C2 | Collector of PNP transistor TR2 - connects to positive supply rail in high-side switch configurations. |
| 4 | E2 | Emitter of PNP transistor TR2 - ties to VCC in emitter-follower or level-shift applications. |
| 5 | B2 | Base of PNP transistor TR2 - driven low to activate TR2; compatible with 3.3 V/5 V microcontroller outputs. |
| 6 | C1 | Collector of NPN transistor TR1 - output node for low-side switching, LED anode drive, or pull-down functions. |
Key Features
| Feature | Design Value |
|---|---|
| Dual complementary topology | Single-package integration of matched NPN+PNP reduces board area by >40% vs. discrete SOT363 solutions. |
| AEC-Q101 qualification | Validated for automotive under-hood and infotainment modules requiring extended temperature operation and long-term reliability. |
| Ultra-low profile (0.37 mm) | Enables use in slim mobile devices and stacked PCB assemblies where Z-height is constrained. |
| Thermally enhanced DFN | 357 K/W Rth(j-a) allows 350 mW total dissipation at 25 °C ambient-2.5× higher than standard SOT363 equivalents. |
| Low leakage (ICBO ≤ 5 µA at 150 °C) | Ensures stable off-state behavior in high-temperature environments like engine control units. |
Applications
| Automotive Door Module | Smartphone LED Backlight Driver |
|---|---|
Use Scenario: Driving window lock/unlock solenoids and status LEDs in a compact door control ECU. IC Role / Device Role / Timing Role: BC847QAPN provides complementary low-side (NPN) and high-side (PNP) switching for bidirectional load control. Use Value: Eliminates need for two separate SOT23 transistors, reducing BOM count and PCB real estate while maintaining AEC-Q101 compliance. |
Use Scenario: Controlling RGB backlight intensity via PWM-driven current sinks/sources in OLED display submodules. IC Role / Device Role / Timing Role: BC847QAPN acts as a dual-path current switch-NPN sinks LED cathode current, PNP sources anode current. Use Value: 100 MHz fT ensures clean PWM edge fidelity up to 10 MHz, minimizing visible flicker during dynamic brightness scaling. |
| Industrial Sensor Signal Conditioning | USB-C Power Delivery Interface |
Use Scenario: Level-shifting and buffering analog sensor outputs (e.g., thermistor, Hall effect) into 3.3 V ADC inputs. IC Role / Device Role / Timing Role: BC847QAPN configured as emitter followers provides impedance transformation and rail-to-rail voltage translation. Use Value: hFE ≥ 200 ensures minimal base current loading on sensitive sensor nodes, preserving measurement accuracy. |
Use Scenario: Enabling/disabling VCONN power and CC line pull-up/down resistors in USB-C port controllers. IC Role / Device Role / Timing Role: BC847QAPN delivers fast, low-leakage switching for USB PD communication lines with <300 ns propagation delay. Use Value: VCE(sat) ≤ 300 mV at 100 mA guarantees <30 mW dissipation per switch-critical for thermally isolated USB-C connector zones. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual complementary transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC846QAPN | Lower VCEO (65 V vs. 45 V), same hFE range and package; higher leakage (ICBO ≤ 15 nA @ 25 °C). | Preferred for higher-voltage industrial controls where 45 V margin is insufficient. | Select BC846QAPN only if system transients exceed 45 V; BC847QAPN offers better thermal performance (357 vs. 420 K/W). |
| EMT6T2R | Same DFN1010B-6 package but includes integrated base resistors (2.2 kΩ); hFE lower (120–270); not AEC-Q101 qualified. | Suitable for consumer-grade logic-level switching where design simplicity outweighs automotive reliability needs. | Choose EMT6T2R for rapid prototyping with resistor-equipped convenience; BC847QAPN required for production automotive designs. |
Compared with BC847QAPN, BC846QAPN trades voltage headroom for slightly higher leakage, while EMT6T2R sacrifices AEC-Q101 qualification and gain for built-in biasing-making BC847QAPN the optimal balance of automotive robustness, thermal efficiency, and design flexibility.
Availability
BC847QAPN is available at Aetrix Electronics and suitable for automotive electronics, portable consumer devices, and industrial sensor interfaces requiring stable component supply, AEC-Q101 assurance, and ultra-compact packaging.
Supply support for BC847QAPN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and mobile markets.
The BC847QAPN belongs to Nexperia's AEC-Q101-qualified general-purpose transistor family, engineered specifically for space- and reliability-critical applications where dual-polarity switching in minimal footprint is required.
FAQ
What is the maximum operating temperature for BC847QAPN?
The BC847QAPN has a maximum junction temperature (Tj) of 150 °C and operates across an ambient temperature range of −55 °C to +150 °C. Its thermal resistance (Rth(j-a)) is 357 K/W when mounted on a standard FR4 PCB, meaning power dissipation must be derated above 25 °C ambient to maintain safe Tj. This makes BC847QAPN suitable for under-hood automotive modules and thermally dense portable electronics.
Is BC847QAPN pin-compatible with BC847B or BC847C variants?
No, BC847QAPN is not pin-compatible with single-transistor BC847B/C SOT23 variants due to its dual-transistor DFN1010B-6 (SOT1216) package and unique 6-pin layout. The BC847QAPN integrates complementary NPN and PNP devices in one die with dedicated emitter, base, and collector terminals per transistor-requiring a distinct PCB footprint and routing strategy versus discrete SOT23 parts.
Does BC847QAPN support 5 V logic-level drive for both transistors?
Yes, BC847QAPN supports direct 5 V microcontroller drive: the NPN base (B1) activates fully at VBE ≈ 760 mV (typical), and the PNP base (B2) turns on with ~0.7 V base-emitter drop-both compatible with standard 5 V CMOS/TTL outputs. For guaranteed saturation at IC = 100 mA, a 1 kΩ base resistor is recommended for each transistor to deliver ~4.2 mA base current.
What is the significance of the "QAPN" suffix in BC847QAPN?
The "QAPN" suffix in BC847QAPN denotes Nexperia's qualification grade and package type: "Q" indicates AEC-Q101 automotive qualification, "A" specifies the DFN1010B-6 (SOT1216) package, and "PN" confirms the dual NPN/PNP configuration. This distinguishes it from non-automotive or single-transistor variants like BC847BW (SOT323) or BC847B (SOT23).
Can BC847QAPN replace two separate BC847B transistors in a circuit?
BC847QAPN can replace two discrete BC847B transistors only if the circuit requires complementary NPN+PNP operation in the same location and accepts the DFN1010B-6 footprint. It cannot substitute for two identical-polarity transistors (e.g., NPN+NPN) due to its fixed complementary pairing. Layout redesign is mandatory-no PCB reuse is possible between SOT23 and DFN1010B-6 packages.
BC847QAPN147 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 350mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010B-6
BC847QAPN147 FAQ
1.How can I place an order for BC847QAPN147 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC847QAPN147 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC847QAPN147 reliable?
The price and inventory of BC847QAPN147 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC847QAPN147 is usually 5 days.
3.What payment methods are accepted for BC847QAPN147?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC847QAPN147 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC847QAPN147?
BC847QAPN147 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC847QAPN147 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC847QAPN147?
For technical support, including BC847QAPN147 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC847QAPN147 requirements.
6.How does Aetrix verify that BC847QAPN147 is sourced from the original manufacturer or authorized distributors?
All BC847QAPN147 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC847QAPN147 meets industry standards.
7.What is the process for return or replacement of BC847QAPN147?
All BC847QAPN147 units undergo pre-shipment inspection (PSI). If there is an issue with BC847QAPN147, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC847QAPN147 part is unused and in its original packaging.
Return procedure for BC847QAPN147:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC847QAPN147 Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
-
MBT2222ADW1T1G
onsemi
-
BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
-
DMMT5551-7-F
Diodes Incorporated
-
DMMT3904W-7-F
Diodes Incorporated
-
DMMT3906W-7-F
Diodes Incorporated
-
FMB3904
onsemi
-
FMB2222A
onsemi
-
ULQ2003D1013TR
STMicroelectronics
-
ZXTD4591E6TA
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
