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Infineon Technologies BC847SE6327BTSA1
- Part No.:
- BC847SE6327BTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BC847SE6327BTSA1.pdf
- Description:
- TRANS 2NPN 45V 0.1A PG-SOT363-PO
- Quantity:
- Payment:
- Shipping:
Inventory:9,617
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Product details
Overview
BC847SE6327BTSA1 from Infineon Technologies is a dual NPN silicon small-signal transistor array in SOT-363 (SC-74) package, designed for AF input stages and driver applications. It features two galvanically isolated transistors with matched hFE (min 200 at IC = 10 µA), VCEO = 45 V, and low VCE(sat) of 90 mV (typ) at IC = 10 mA / IB = 0.5 mA. Used in automotive audio preamplifier stages per AEC-Q101 qualification.
For engineers reviewing the BC847SE6327BTSA1 datasheet, BC847SE6327BTSA1 pinout, BC847SE6327BTSA1 application, or BC847SE6327BTSA1 equivalent, key selection criteria include dual-transistor matching tolerance, thermal resistance (RthJS ≤ 140 K/W), junction temperature rating (150 °C), and RoHS-compliant Pb-free packaging for automotive-grade reliability.
Technical Context
This dual NPN transistor array integrates two electrically isolated gain stages on a single die, enabling compact biasing and signal splitting without cross-coupling. Its hFE range spans 200–450 (IC = 2 mA) and 250–290 (IC = 10 µA), supporting stable DC bias networks across temperature.
The device operates with VCB0 = 50 V and exhibits fT = 250 MHz (IC = 20 mA), making it suitable for low-noise amplification up to mid-VHF. Ccb = 0.95 pF and Ceb = 9 pF enable predictable high-frequency response in discrete amplifier topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum collector-emitter voltage before breakdown under open-base conditions; defines safe operating voltage in linear amplifier stages. |
| hFE (IC = 2 mA) | 250–450 - DC current gain range enabling precise bias point control in cascaded gain stages with minimal variation. |
| VCE(sat) | 90–250 mV - Low saturation voltage ensures minimal power loss and heat generation in switching or saturated driver configurations. |
| fT | 250 MHz - Transition frequency confirms usable bandwidth for audio and low-speed digital signal conditioning. |
| RthJS | ≤140 K/W - Junction-to-solder-point thermal resistance supports reliable operation at 115 °C board temperature with 250 mW dissipation. |
| Ccb | 0.95 pF - Collector-base capacitance limits Miller effect in common-emitter amplifiers, preserving high-frequency stability. |
| Q1/Q2 Matching | Galvanic isolation + matched hFE - Enables differential pair implementation and balanced signal routing without external isolation components. |
Pinout & Package
SOT-363 (SC-74) surface-mount package with 6-pin lead frame, 1.3 mm height, and 2.1 mm × 1.25 mm footprint. Pin 1 marked by dot or bevel; moisture sensitivity level (MSL) 1 per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (E1) | Emitter of Transistor 1 | Low-impedance current sink node for Q1; referenced to ground or bias network in common-emitter configuration. |
| 2 (B1) | Base of Transistor 1 | Control input for Q1; requires current-limited drive to maintain hFE-based amplification linearity. |
| 3 (C2) | Collector of Transistor 2 | Active output node for Q2; connects to load resistor or next-stage input with pull-up or active termination. |
| 4 (E2) | Emitter of Transistor 2 | Independent emitter terminal for Q2; enables separate biasing or current mirror configuration with Q1. |
| 5 (B2) | Base of Transistor 2 | Isolated control input for Q2; allows independent signal injection or shared bias with Q1 via resistor divider. |
| 6 (C1) | Collector of Transistor 1 | Primary output node for Q1; used in gain stage output, switch load connection, or feedback path. |
Key Features
| Feature | Design Value |
|---|---|
| Dual isolated NPN transistors | Two independent gain elements in one package reduce PCB area by ~40% vs. discrete SOT-23 solutions. |
| AEC-Q101 qualified | Validated for automotive electronics including infotainment preamps and body control module drivers. |
| Matched hFE tracking | Transistors exhibit consistent DC gain over temperature, enabling stable differential amplification without trimming. |
| Pb-free RoHS compliance | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (peak 260 °C). |
| Low VCE(sat) | 90 mV typical at IC/IB = 10 mA/0.5 mA reduces conduction loss in battery-powered sensor interface circuits. |
Applications
| Automotive Audio Preamp Stage | Industrial Sensor Signal Conditioning |
|---|---|
Use Scenario: Dual-stage low-noise amplification of microphone or piezoelectric sensor signals in vehicle cabin noise cancellation systems. IC Role / Device Role / Timing Role: First transistor provides high-Z input buffering; second delivers gain with matched hFE to minimize offset drift. Use Value: Galvanic isolation prevents ground loop coupling between stages, reducing audible hum by >25 dB in 20–20 kHz band. | Use Scenario: Amplifying low-level thermocouple or strain gauge outputs in PLC analog input modules. IC Role / Device Role / Timing Role: Q1 acts as current source for ratiometric excitation; Q2 buffers conditioned voltage to ADC driver. Use Value: Matched hFE ensures identical gain error across channels, enabling <±0.1% channel-to-channel mismatch. |
| LED Driver Current Mirror | Logic-Level Signal Translator |
Use Scenario: Driving multiple indicator LEDs with matched brightness in automotive dashboard clusters. IC Role / Device Role / Timing Role: Q1 sets reference current; Q2 replicates it to LED anode with 1:1 current ratio. Use Value: Internal matching eliminates need for external precision resistors, cutting BOM cost by $0.03/unit at 1M volume. | Use Scenario: Level-shifting 1.8 V logic signals to 3.3 V I/O domains in industrial gateways. IC Role / Device Role / Timing Role: Q1 inverter stage shifts voltage; Q2 provides rail-to-rail output swing with fast turn-on (ton < 5 ns). Use Value: VBE(on) = 580–700 mV ensures clean switching at 10 MHz clock rates without overshoot. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN transistor array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847B,315 (Nexperia) | Single NPN in SOT-23; no dual topology or internal isolation. | Requires two devices and layout space for discrete pairing; lacks hFE matching. | Select when only one transistor is needed per function or when cost-per-device is prioritized over integration. |
| MBT3904DW1T1G (ON Semiconductor) | Same SOT-363 dual NPN, but hFE min = 100 (IC = 10 mA); VCEO = 40 V. | Lower gain margin may require larger base resistors in high-impedance bias networks. | Choose for legacy designs where 40 V rating suffices and tighter hFE spread is not required. |
Compared with BC847SE6327BTSA1, BC847B,315 increases component count and layout complexity, while MBT3904DW1T1G trades off gain consistency and voltage headroom for broader availability-making the Infineon part optimal for AEC-Q101–compliant dual-stage analog signal paths.
Availability
BC847SE6327BTSA1 is available at Aetrix Electronics and suitable for automotive audio preamplifiers, industrial sensor signal conditioners, and LED current mirror drivers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BC847SE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.
This device belongs to Infineon's BC84xS series of AEC-Q101–qualified dual transistor arrays, engineered specifically for high-reliability analog signal conditioning in automotive and industrial environments where thermal stability and parameter matching are critical.
FAQ
What is the maximum continuous collector current per transistor in BC847SE6327BTSA1?
The absolute maximum continuous collector current is 100 mA per transistor, as specified in the "Maximum Ratings" table. This rating assumes TS ≤ 115 °C and applies individually to each NPN element. Pulse operation up to 200 mA is allowed for tp ≤ 10 ms with duty cycle D ≤ 2%.
Does BC847SE6327BTSA1 support operation at −40 °C ambient temperature?
Yes. The device is rated for storage temperature from −65 °C to +150 °C and junction temperature up to +150 °C. Its electrical characteristics are guaranteed from −55 °C to +150 °C per AEC-Q101 stress testing, confirming full functionality at −40 °C ambient in automotive under-hood and cabin applications.
How is pin 1 identified on the SOT-363 package of BC847SE6327BTSA1?
Pin 1 is marked by a molded dot or beveled edge located at the top-left corner of the package when the marking side faces up and the leads point downward. The pinout follows standard SC-74 orientation: pins 1–3 on the left row (E1, B1, C2), pins 4–6 on the right row (E2, B2, C1), reading left-to-right, top-to-bottom.
Can BC847SE6327BTSA1 replace BC847C in a single-transistor application?
No. BC847SE6327BTSA1 is a dual-transistor array with fixed pinout and internal isolation; it cannot substitute for a single-transistor BC847C without circuit redesign. Using only one transistor would leave unused pins floating or improperly terminated, risking ESD damage or unintended conduction paths.
BC847SE6327BTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 250mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BC847SE6327BTSA1 FAQ
1.How can I place an order for BC847SE6327BTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC847SE6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC847SE6327BTSA1 reliable?
The price and inventory of BC847SE6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC847SE6327BTSA1 is usually 5 days.
3.What payment methods are accepted for BC847SE6327BTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC847SE6327BTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC847SE6327BTSA1?
BC847SE6327BTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC847SE6327BTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC847SE6327BTSA1?
For technical support, including BC847SE6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC847SE6327BTSA1 requirements.
6.How does Aetrix verify that BC847SE6327BTSA1 is sourced from the original manufacturer or authorized distributors?
All BC847SE6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC847SE6327BTSA1 meets industry standards.
7.What is the process for return or replacement of BC847SE6327BTSA1?
All BC847SE6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC847SE6327BTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC847SE6327BTSA1 part is unused and in its original packaging.
Return procedure for BC847SE6327BTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC847SE6327BTSA1 Tags
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