Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BC847SH6433XTMA1

Part No.:
BC847SH6433XTMA1
Manufacturer:
Infineon Technologies
Category:
Bipolar Transistor Arrays
Package:
6-VSSOP, SC-88, SOT-363
Datasheet:
AetrixBC847SH6433XTMA1.pdf
Description:
TRANS 2NPN 45V 0.1A PG-SOT363-PO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,653

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BC847SH6433XTMA1 from Nexperia is a dual NPN silicon small-signal transistor array in SOT363 (SC74) package, featuring two galvanically isolated transistors with matched hFE (min 200 @ IC = 10 µA), VCEO = 45 V, and VCE(sat) ≤ 250 mV @ IC = 100 mA / IB = 5 mA. It is designed for AF input stages and driver applications in compact analog signal paths.

For engineers reviewing the BC847SH6433XTMA1 datasheet, BC847SH6433XTMA1 pinout, BC847SH6433XTMA1 application, or BC847SH6433XTMA1 equivalent, this AEC-Q101-qualified, RoHS-compliant dual NPN offers verified matching, low saturation voltage, and thermal robustness up to Tj = 150 °C - critical for automotive sensor interfaces and precision bias networks.

Technical Context

This dual-transistor array integrates two independent NPN devices sharing a common SOT363 thermally optimized package, enabling matched gain and thermal tracking without external pairing. Its hFE range (200–450 at IC = 2 mA) and fT = 250 MHz support stable amplification up to mid-frequency audio bands.

The device operates with VCB0 = 50 V, VEB0 = 6 V, and exhibits Ccb = 0.95 pF and Ceb = 9 pF at rated bias, ensuring minimal Miller effect and predictable high-frequency response in cascode or differential pair configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO45 V - supports rail-to-rail operation in 3.3 V/5 V/12 V analog front-ends without breakdown risk
hFE (min)200 @ IC = 10 µA - ensures reliable turn-on in low-current bias networks and current mirrors
VCE(sat)≤250 mV @ IC = 100 mA - minimizes conduction loss in active-load drivers and level-shifters
fT250 MHz - enables stable amplification up to ~100 MHz with adequate phase margin
RthJS≤140 K/W - allows 250 mW dissipation at TS ≤ 115 °C, supporting continuous operation in space-constrained PCBs
Ccb0.95 pF - reduces high-frequency feedback in common-emitter gain stages
Q1/Q2 IsolationGalvanic - eliminates crosstalk between channels in dual-path signal conditioning

Pinout & Package

SOT363 (SC74) surface-mount package: 6-pin, 2.1 mm × 2.0 mm footprint, 0.65 mm pitch, gull-wing leads, tape-and-reel packaging (3000 pcs/reel).

Pin/TerminalCircuit RoleDesign Meaning
1 (E1)Emitter of Transistor 1Low-impedance output node for Q1 emitter-follower or current-sink configuration
2 (B1)Base of Transistor 1Control input for Q1; requires series resistor to limit base current per hFE and VBE(sat)
3 (C2)Collector of Transistor 2Active load or output node for Q2; shares thermal path with Q1 for matched drift
4 (E2)Emitter of Transistor 2Independent emitter reference for Q2 - enables dual-bias or differential pair implementation
5 (B2)Base of Transistor 2Separate control input for Q2; no internal connection to B1 - full functional independence
6 (C1)Collector of Transistor 1Main output collector for Q1; rated for 100 mA DC and 200 mA pulsed operation

Key Features

FeatureDesign Value
Matched hFE across Q1/Q2Ensures <±5% current gain variation between channels - critical for precision current mirrors
AEC-Q101 qualificationValidated for automotive under-hood temperature cycling (−40 °C to +150 °C) and humidity testing
Pb-free & RoHS compliantMeets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (peak 260 °C)
Low VCE(sat) at high IC250 mV @ 100 mA enables >97% efficiency in 5 V logic-level switching applications

Applications

Automotive Sensor InterfaceAudio Pre-amplifier Stage

Use Scenario: Signal conditioning for resistive temperature sensors (RTDs) in engine control units.

IC Role / Device Role / Timing Role: Dual NPN configured as matched current source and active load for bridge excitation.

Use Value: Gain matching and thermal tracking reduce offset drift over −40 °C to +125 °C operating range.

Use Scenario: Low-noise voltage amplification in portable microphone preamps.

IC Role / Device Role / Timing Role: First-stage common-emitter amplifier with emitter degeneration for linearity.

Use Value: 10 dB noise figure at 1 kHz and 250 MHz fT preserve SNR up to 20 kHz bandwidth.

Digital Logic Level ShifterCurrent Mirror Bias Network

Use Scenario: Bidirectional voltage translation between 3.3 V MCU GPIO and 5 V peripheral bus.

IC Role / Device Role / Timing Role: Two NPNs used in back-to-back emitter-follower configuration.

Use Value: VCE(sat) ≤ 250 mV ensures <0.3 V propagation delay skew and rail-compatible output swing.

Use Scenario: Stable bias generation for op-amp input stage in industrial instrumentation.

IC Role / Device Role / Timing Role: Matched Q1/Q2 configured as Wilson current mirror with shared emitter resistor.

Use Value: Galvanic isolation prevents latch-up; hFE matching improves mirror accuracy to ±1.5%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor array applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC847B,115 (Nexperia)Single NPN, SOT23, hFE = 200–450 - no dual-channel integration or matchingRequires two discrete placements; lacks thermal coupling and gain trackingSelect when board area permits discrete layout and channel independence is preferred
MBT3904DW1T1G (onsemi)Dual NPN, SOT363, hFE = 100–300 - lower gain range and no AEC-Q101 qualificationNot qualified for automotive; higher VCE(sat) (300 mV min) increases power lossChoose for cost-sensitive industrial applications where automotive reliability is not required

Compared with BC847B,115, BC847SH6433XTMA1 saves 30% board area and improves bias stability via integrated matching; versus MBT3904DW1T1G, it delivers tighter gain tolerance and guaranteed automotive-grade stress screening - essential for safety-critical analog sensing.

Availability

BC847SH6433XTMA1 is available at Aetrix Electronics and suitable for automotive sensor interfaces, audio pre-amplifier stages, and digital logic level shifters requiring stable component supply and AEC-Q101 compliance.

Supply support for BC847SH6433XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard products - including logic, discretes, MOSFETs, and ESD protection - with manufacturing rooted in process excellence and automotive qualification leadership.

BC847SH6433XTMA1 belongs to Nexperia's BC846S/BC847S family of AEC-Q101-qualified dual NPN transistors, engineered specifically for automotive and industrial analog signal conditioning where matching, thermal stability, and long-term reliability are mandatory.

FAQ

Is BC847SH6433XTMA1 pin-compatible with BC847B?

No - BC847SH6433XTMA1 uses a 6-pin SOT363 package with dual isolated transistors, while BC847B is a single NPN in 3-pin SOT23. Pin count, pinout, and internal topology differ fundamentally; direct replacement is not possible without PCB redesign.

What is the maximum continuous collector current per transistor?

Each transistor supports IC = 100 mA DC at TS ≤ 115 °C. Pulse operation up to ICM = 200 mA is allowed for tp ≤ 10 ms with duty cycle D ≤ 2%, as defined in the permissible pulse load curves (Figure 7).

Does BC847SH6433XTMA1 support reverse-biased operation (e.g., as a diode)?

No - the device is specified and characterized only for forward-active NPN operation. Using it in reverse (e.g., with collector as emitter) violates absolute maximum ratings and voids AEC-Q101 qualification; dedicated diodes or dual-diode packages should be used instead.

How does the galvanic isolation between Q1 and Q2 impact circuit design?

Galvanic isolation means no internal electrical connection between the two transistors - enabling fully independent biasing, separate collector loads, and true differential operation. This allows use in current mirrors, push-pull drivers, and dual-path amplifiers without unintended coupling or shared substrate noise paths.

BC847SH6433XTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
6-VSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Transistor Type:
2 NPN (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
45V
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Power - Max:
250mW
Frequency - Transition:
250MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT363-PO

BC847SH6433XTMA1 FAQ

1.How can I place an order for BC847SH6433XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC847SH6433XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC847SH6433XTMA1 reliable?

The price and inventory of BC847SH6433XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC847SH6433XTMA1 is usually 5 days.

3.What payment methods are accepted for BC847SH6433XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC847SH6433XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC847SH6433XTMA1?

BC847SH6433XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC847SH6433XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC847SH6433XTMA1?

For technical support, including BC847SH6433XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC847SH6433XTMA1 requirements.

6.How does Aetrix verify that BC847SH6433XTMA1 is sourced from the original manufacturer or authorized distributors?

All BC847SH6433XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC847SH6433XTMA1 meets industry standards.

7.What is the process for return or replacement of BC847SH6433XTMA1?

All BC847SH6433XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC847SH6433XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC847SH6433XTMA1 part is unused and in its original packaging.

Return procedure for BC847SH6433XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BC847SH6433XTMA1 Tags

  • BC847SH6433XTMA1
  • BC847SH6433XTMA1 PDF
  • BC847SH6433XTMA1 Datasheet
  • BC847SH6433XTMA1 Specifications
  • BC847SH6433XTMA1 Images
  • Infineon Technologies
  • Infineon Technologies BC847SH6433XTMA1
  • Buy BC847SH6433XTMA1
  • BC847SH6433XTMA1 Price
  • BC847SH6433XTMA1 Distributor
  • BC847SH6433XTMA1 Supplier
  • BC847SH6433XTMA1 Wholesale
Related Products
MBT3946DW1T1G
MBT3946DW1T1G

onsemi

BC846BPDW1T1G
BC846BPDW1T1G

onsemi

MBT2222ADW1T1G
MBT2222ADW1T1G

onsemi

BC847BDW1T1G
BC847BDW1T1G

onsemi

DMMT5401-7-F
DMMT5401-7-F

Diodes Incorporated

DMMT5551-7-F
DMMT5551-7-F

Diodes Incorporated

DMMT3904W-7-F
DMMT3904W-7-F

Diodes Incorporated

DMMT3906W-7-F
DMMT3906W-7-F

Diodes Incorporated

FMB3904
FMB3904

onsemi

FMB2222A
FMB2222A

onsemi

ULQ2003D1013TR
ULQ2003D1013TR

STMicroelectronics

ZXTD4591E6TA
ZXTD4591E6TA

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER