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Infineon Technologies BC847SH6727XTSA1
- Part No.:
- BC847SH6727XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BC847SH6727XTSA1.pdf
- Description:
- TRANS 2NPN 45V 0.1A PG-SOT363-PO
- Quantity:
- Payment:
- Shipping:
Inventory:4,092
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Product details
Overview
BC847SH6727XTSA1 from Infineon Technologies is a dual NPN silicon small-signal transistor array in SOT363 (SC74) package, rated for 45 V VCEO, 100 mA IC, and 250 mW Ptot. It features matched gain (hFE = 200–450), low VCE(sat) (90–600 mV), and AEC-Q101 qualification for automotive driver stages and AF input circuits.
For engineers reviewing the BC847SH6727XTSA1 datasheet, BC847SH6727XTSA1 pinout, BC847SH6727XTSA1 application, or BC847SH6727XTSA1 equivalent, key selection criteria include dual-transistor matching, thermal resistance (RthJS ≤ 140 K/W), VBE(ON) (580–770 mV), fT (250 MHz), and RoHS-compliant galvanic isolation between TR1 and TR2.
Technical Context
This dual NPN array integrates two electrically isolated transistors with tightly matched DC current gain and saturation characteristics. Its design supports cascaded amplification and complementary switching in compact analog front-ends where layout symmetry and thermal coupling control are critical.
The device operates across –65 °C to +150 °C, with guaranteed V(BR)CEO = 45 V and V(BR)CBO = 50 V at IC = 10 µA. AC performance includes fT = 250 MHz at IC = 20 mA and Ccb = 0.95 pF at VCB = 10 V, enabling stable operation up to mid-VHF frequencies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum collector-emitter voltage before breakdown under open-base conditions; defines safe operating range in linear amplifier stages. |
| IC | 100 mA - Continuous collector current rating; supports medium-drive applications like sensor interface buffers and LED drivers. |
| hFE | 200–450 - DC current gain at IC = 2 mA and VCE = 5 V; enables predictable biasing and gain stability in discrete amplifier designs. |
| VCE(sat) | 90–600 mV - Saturation voltage at IC = 10–100 mA; determines conduction loss and thermal load in switching configurations. |
| fT | 250 MHz - Transition frequency at IC = 20 mA; confirms suitability for audio-frequency amplification and low-speed digital signal conditioning. |
| RthJS | ≤140 K/W - Junction-to-soldering-point thermal resistance; informs PCB copper area requirements for thermal management at full power. |
| AEC-Q101 | Qualified - Meets stress-test requirements for automotive electronics; validates reliability in engine control, body electronics, and ADAS subsystems. |
Pinout & Package
SOT363 (SC74) surface-mount package with 6-pin lead frame, 1.9 mm × 2.9 mm footprint, and gull-wing leads. Pin 1 marked by dot or bevel; moisture sensitivity level (MSL) not specified in source data.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (E1) | Emitter of Transistor 1 | Common emitter node for first NPN; connects to ground reference or current-sense resistor in emitter-follower configuration. |
| 2 (B1) | Base of Transistor 1 | Input control terminal for TR1; requires current-limiting resistor when driven from logic or op-amp output. |
| 3 (C2) | Collector of Transistor 2 | Output node for second NPN; used for active-load or cascode stage connection in multi-stage amplifiers. |
| 4 (E2) | Emitter of Transistor 2 | Independent emitter node for TR2; enables differential pair implementation or separate biasing paths. |
| 5 (B2) | Base of Transistor 2 | Second independent input; allows synchronized or phase-shifted drive in push-pull or current-mirror topologies. |
| 6 (C1) | Collector of Transistor 1 | Main output of TR1; interfaces with load resistors, relay coils, or next-stage inputs in discrete driver circuits. |
Key Features
| Feature | Design Value |
|---|---|
| Dual galvanically isolated NPN transistors | Enables independent biasing and signal routing without shared substrate leakage; critical for precision analog front-ends. |
| Matched hFE and VBE(ON) | Reduces gain error and offset drift in differential pairs and current mirrors; improves linearity in audio preamplifier stages. |
| Low VCE(sat) (90 mV typ.) | Minimizes voltage drop and self-heating during saturated switching; extends battery life in portable sensor nodes. |
| AEC-Q101 qualification | Validates robustness against temperature cycling, humidity, and mechanical shock; required for under-hood automotive modules. |
| Pb-free RoHS-compliant construction | Meets global environmental compliance mandates; supports lead-free reflow soldering profiles without degradation. |
Applications
| Automotive Body Control Module | Industrial Sensor Signal Conditioning |
|---|---|
Use Scenario: Driving relays and LEDs in door lock actuators and interior lighting control units. IC Role / Device Role / Timing Role: Dual NPN switch providing isolated, current-amplified outputs for 12 V loads. Use Value: Matched gain ensures consistent turn-on thresholds across both channels; low VCE(sat) reduces heat generation in sealed enclosures. | Use Scenario: Amplifying low-level thermistor or RTD bridge outputs in PLC analog input modules. IC Role / Device Role / Timing Role: Discrete transistor pair configured as emitter followers for impedance buffering and DC-coupled gain staging. Use Value: Tight hFE matching minimizes channel-to-channel gain mismatch; AEC-Q101 grade ensures long-term stability in industrial environments. |
| Audio Input Stage | USB-C Power Delivery Interface |
Use Scenario: Low-noise preamplifier for microphone inputs in voice-controlled home appliances. IC Role / Device Role / Timing Role: Dual NPN configured as common-emitter amplifier with degenerated emitter for linearity and noise control. Use Value: fT = 250 MHz and F = 10 dB support wideband audio fidelity; low Ccb (0.95 pF) prevents high-frequency instability. | Use Scenario: Level-shifting and enable control for USB-C CC line detection and VCONN switching. IC Role / Device Role / Timing Role: Discrete transistor pair acting as bidirectional logic-level translator and current-limited gate driver. Use Value: Independent E/B/C terminals allow flexible pull-up/pull-down and fault-isolation; SOT363 footprint saves space on dense PD controller PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN transistor array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847B,115 (Nexperia) | Single NPN, SOT23 package; hFE = 200–450, VCEO = 45 V, but no dual topology or internal isolation. | Lacks matched pair functionality; unsuitable for differential or mirrored biasing schemes. | Select only when single-transistor operation suffices and board space permits separate placement. |
| MBT3904DW1T1G (onsemi) | Dual NPN in SOT363; hFE = 100–300, VCEO = 40 V, RthJS = 150 K/W; lower gain and voltage rating than BC847SH6727XTSA1. | Marginally lower VCEO limits use in 12 V automotive systems with load-dump transients. | Acceptable for non-automotive industrial applications where gain tolerance >200 is acceptable and thermal margin exists. |
Compared with BC847B,115 and MBT3904DW1T1G, BC847SH6727XTSA1 delivers superior dual-transistor matching, higher VCEO, and AEC-Q101 validation-making it the preferred choice for automotive and precision analog designs requiring galvanic isolation and gain consistency.
Availability
BC847SH6727XTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor signal conditioning, audio input stages, and USB-C power delivery interface circuits requiring stable component supply and long-term lifecycle assurance.
Supply support for BC847SH6727XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.
The BC847S series belongs to Infineon's discrete bipolar transistor portfolio, designed specifically for high-reliability analog and switching functions in automotive and industrial environments where matched dual-transistor behavior and thermal robustness are essential.
FAQ
What is the maximum junction temperature for BC847SH6727XTSA1?
The absolute maximum junction temperature (Tj) is 150 °C, as specified in the Absolute Maximum Ratings table. Operation above this limit risks permanent degradation of gain, leakage, and breakdown characteristics. Derating curves in Figure 6 confirm that total power dissipation must be reduced linearly above 115 °C case temperature to maintain safe Tj.
Is BC847SH6727XTSA1 pin-compatible with BC846S or BC847U variants?
Yes-BC847SH6727XTSA1 shares identical SOT363 pinout and marking orientation with BC846S and BC847U. However, electrical differences exist: BC847S has VCEO = 45 V (vs. 65 V for BC846S) and lower thermal resistance (RthJS ≤ 140 K/W vs. ≤ 130 K/W for BC846U), so direct substitution requires verification of voltage and thermal margins.
Does BC847SH6727XTSA1 support pulsed operation beyond its DC ratings?
Yes-the device supports pulsed collector current up to 200 mA (ICM) with duty cycle ≤2% and pulse width ≤10 ms. Figure 7 shows permissible pulse load ratios (Ptot(max)/Ptot(DC)) versus pulse duration, confirming safe operation at 5× DC power for sub-millisecond pulses when thermal mass is sufficient.
How is the "H6727" suffix interpreted in BC847SH6727XTSA1?
The "H6727" is Infineon's internal date/lot code: "H" indicates 2017 year, "67" is week number (mid-September), and "27" is factory or process variant identifier. "XTSA1" denotes tape-and-reel packaging (3,000 pcs/reel, ø180 mm), RoHS compliance, and standard SC74 footprint per JEDEC MO-178.
BC847SH6727XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 250mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BC847SH6727XTSA1 FAQ
1.How can I place an order for BC847SH6727XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC847SH6727XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC847SH6727XTSA1 reliable?
The price and inventory of BC847SH6727XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC847SH6727XTSA1 is usually 5 days.
3.What payment methods are accepted for BC847SH6727XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC847SH6727XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC847SH6727XTSA1?
BC847SH6727XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC847SH6727XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC847SH6727XTSA1?
For technical support, including BC847SH6727XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC847SH6727XTSA1 requirements.
6.How does Aetrix verify that BC847SH6727XTSA1 is sourced from the original manufacturer or authorized distributors?
All BC847SH6727XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC847SH6727XTSA1 meets industry standards.
7.What is the process for return or replacement of BC847SH6727XTSA1?
All BC847SH6727XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC847SH6727XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC847SH6727XTSA1 part is unused and in its original packaging.
Return procedure for BC847SH6727XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC847SH6727XTSA1 Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
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MBT2222ADW1T1G
onsemi
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BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
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DMMT5551-7-F
Diodes Incorporated
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DMMT3904W-7-F
Diodes Incorporated
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DMMT3906W-7-F
Diodes Incorporated
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FMB3904
onsemi
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FMB2222A
onsemi
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ULQ2003D1013TR
STMicroelectronics
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ZXTD4591E6TA
Diodes Incorporated
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