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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Nexperia USA Inc. BC856BS/DG/B3X

Name: BC856BS/DG/B3X
Brand: Nexperia USA Inc.
SKU: BC856BS/DG/B3X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC856BS/DG/B3X

Manufacturer:: Nexperia USA Inc.

Category:: Bipolar Transistor Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: BC856BS/DG/B3X.pdf

Description:: TRANS 2PNP 65V 100MA 6-TSSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC856BS/DG/B3X from Nexperia is a dual PNP general-purpose transistor pair in a SOT363-3 (TSSOP6) package, rated for −65 V V_CEO, −100 mA I_C, and offering h_FE of 200–450 at −2 mA collector current. It delivers low V_CE(sat) (−200 mV typ. at −100 mA), closely matched gain between transistors, and no mutual interference-ideal for compact dual-channel biasing and switching in space-constrained analog front-ends.

For engineers reviewing the BC856BS datasheet, BC856BS pinout, BC856BS application, or BC856BS equivalent, this device is selected for dual PNP functions requiring tight h_FE matching, low saturation voltage, minimal board footprint, and thermal stability up to 150 °C junction temperature in industrial signal conditioning and discrete logic interfaces.

Technical Context

The BC856BS integrates two electrically isolated PNP transistors in a single TSSOP6 package with independent emitter, base, and collector terminals per device. Its design eliminates crosstalk while enabling matched DC characteristics-critical for differential amplifiers, complementary driver stages, and dual-current-source bias networks.

It operates within −55 °C to +150 °C ambient range, supports pulsed I_C up to −200 mA, and exhibits low capacitance (C_c = 2.3 pF typ., C_e = 10 pF typ.) and high f_T (100 MHz typ. at −10 mA), supporting stable small-signal amplification up to mid-VHF frequencies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−65 V: Maximum safe collector-emitter voltage with base open; defines breakdown margin in high-side switch or active load applications.
I_C	−100 mA continuous: Rated collector current per transistor; supports moderate-power switching without forced cooling on FR4 PCB.
h_FE	200–450 at V_CE = −5 V, I_C = −2 mA: Tight DC current gain spread enables predictable biasing in dual-transistor circuits.
V_CE(sat)	−200 mV typ. at I_C = −100 mA, I_B = −5 mA: Low saturation voltage minimizes conduction loss in linear regulators and saturated-switch designs.
C_c	2.3 pF typ. at V_CB = −10 V: Low collector-base capacitance reduces Miller effect, improving high-frequency stability in amplifier stages.
P_tot (per device)	300 mW at T_amb ≤ 25 °C: Total dissipation across both transistors on standard FR4 PCB; enables dual-channel operation without heatsinking.

Pinout & Package

SOT363-3 (TSSOP6) plastic surface-mount package: 1.35 mm × 2.2 mm footprint, 0.65 mm pitch, 1.1 mm max height; optimized for reflow soldering with defined land patterns per Figure 12.

Pin/Terminal	Circuit Role	Design Meaning
1	E₁ (Emitter of TR1)	Current sink terminal for first PNP transistor; connects to local ground or bias reference in dual-stage configurations.
2	B₁ (Base of TR1)	Control input for TR1; requires negative base drive relative to emitter for conduction in PNP topology.
3	C₂ (Collector of TR2)	Current source terminal for second PNP transistor; ties to positive rail or load in high-side switch applications.
4	E₂ (Emitter of TR2)	Current sink terminal for TR2; independently referenced, enabling separate bias networks for each transistor.
5	B₂ (Base of TR2)	Independent control input for TR2; allows asynchronous or differential switching without shared base node.
6	C₁ (Collector of TR1)	Current source terminal for TR1; used in mirror loads, cascode stages, or parallel output configurations.

Key Features

Feature	Design Value
No mutual interference	Electrically isolated die structure ensures zero crosstalk between TR1 and TR2-enabling true dual-channel independence in feedback loops and matched pairs.
Closely matched h_FE	Transistors exhibit tightly correlated DC current gain across production lots, reducing calibration needs in precision current mirrors and differential amplifiers.
Low V_CE(sat)	−200 mV typical saturation voltage at full rated current improves efficiency in battery-powered switches and low-dropout regulator pass elements.
Low collector capacitance	2.3 pF typical C_c limits high-frequency phase shift and instability in RF amplifier bias networks and oscillator tail currents.

Applications

LED Driver Pair

Dual-Channel Current Mirror

Use Scenario: Driving two independent indicator LEDs from a common microcontroller GPIO with inverted logic.

IC Role / Device Role / Timing Role: Dual PNP switch providing high-side current sourcing with matched turn-on thresholds.

Use Value: Eliminates need for two discrete SOT23 devices, saving 40% board area while ensuring consistent LED brightness via h_FE matching.

Use Scenario: Generating matched bias currents for op-amp input stages or sensor front-end amplifiers.

IC Role / Device Role / Timing Role: Precision current mirror core where TR1 sets reference current and TR2 replicates it with <±5% error.

Use Value: Reduces offset drift by >30% compared to unmatched discretes due to monolithic thermal tracking and gain correlation.

Discrete Logic Inverter Pair

High-Side Load Switch

Use Scenario: Implementing dual inverting gates in legacy TTL-compatible interface circuits without integrated logic ICs.

IC Role / Device Role / Timing Role: Complementary PNP pair acting as active-pull inverters with defined propagation delay and fan-out.

Use Value: Achieves <15 ns propagation delay with 10 mA drive capability per gate, meeting legacy bus timing requirements.

Use Scenario: Controlling two independent 12 V automotive sensors or industrial solenoids from low-voltage MCU outputs.

IC Role / Device Role / Timing Role: High-side power switch with independent enable control per channel and built-in thermal derating.

Use Value: Supports 100 mA continuous per channel with 150 °C T_j rating, enabling reliable operation in under-hood environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC857BS	V_CEO = −45 V (vs. −65 V); h_FE min = 125 (vs. 200); otherwise identical SOT363-3 pinout and thermal specs.	Lower voltage rating restricts use in ≥48 V systems; suitable only where supply rails stay below 36 V.	Select when lower cost is prioritized and system voltage headroom permits reduced breakdown margin.
MBT3906DW1T1G	Same V_CEO/I_C ratings but higher V_CE(sat) (−400 mV typ.), wider h_FE spread (100–300), and different pinout (SOT-363 variant with swapped collectors).	Not pin-compatible; requires PCB redesign; higher saturation loss increases power dissipation in high-duty-cycle switching.	Choose only if existing design uses ON Semiconductor's footprint and gain spread tolerance is acceptable.

Compared with BC856BS, BC857BS trades voltage robustness for cost in lower-voltage systems, while MBT3906DW1T1G introduces layout incompatibility and higher conduction loss-making BC856BS optimal for designs demanding 65 V margin, tight gain matching, and drop-in SOT363-3 compatibility.

Availability

BC856BS/DG/B3X is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive body-control modules, and consumer appliance control boards requiring stable component supply with guaranteed long-term manufacturability through 2030.

Supply support for BC856BS/DG/B3X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in automotive-qualified and industrial-grade small-signal transistors.

The BC856BS belongs to Nexperia's general-purpose bipolar transistor family, engineered for space-efficient dual-transistor integration in cost-sensitive, thermally constrained applications where matching and reliability outweigh ultra-high-speed performance.

FAQ

Is BC856BS/DG/B3X automotive qualified?

No. BC856BS/DG/B3X is not AEC-Q101 qualified and lacks automotive-specific testing or qualification documentation. It is intended for industrial, consumer, and commercial applications only. For automotive use, Nexperia offers the BC856BQ series, which carries full AEC-Q101 certification and extended temperature validation.

What is the maximum allowable peak collector current for BC856BS?

The absolute maximum peak collector current is −200 mA per transistor, specified for single pulses with duration ≤1 ms and duty cycle ≤2%. This rating assumes proper PCB thermal management per the FR4 single-sided copper footprint defined in Figure 12 of the datasheet.

Can BC856BS replace BC846BPN in a circuit?

No. BC846BPN is an NPN/PNP pair, whereas BC856BS is a PNP/PNP pair. Swapping them would invert logic polarity and disrupt biasing in most circuits. The correct PNP/PNP complement to BC846BPN is BC856BS itself; its NPN/NPN counterpart is BC846BS.

Does BC856BS require external base resistors in switching applications?

Yes. Each base (pins 2 and 5) must be driven through a current-limiting resistor to ensure proper I_B/I_C ratio and avoid overdrive. For −100 mA I_C, a minimum I_B of −5 mA is recommended, requiring ~1 kΩ resistor when driven from a 5 V logic source with ~0.7 V V_BE drop.

BC856BS/DG/B3X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: 2 PNP (Dual)

Current - Collector (Ic) (Max):: 100mA

Voltage - Collector Emitter Breakdown (Max):: 65V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 5V

Power - Max:: 300mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSSOP

BC856BS/DG/B3X FAQ

1.How can I place an order for BC856BS/DG/B3X through Aetrix?

Please submit a Request for Quotation (RFQ) for BC856BS/DG/B3X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC856BS/DG/B3X reliable?

The price and inventory of BC856BS/DG/B3X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC856BS/DG/B3X is usually 5 days.

3.What payment methods are accepted for BC856BS/DG/B3X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC856BS/DG/B3X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC856BS/DG/B3X?

BC856BS/DG/B3X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC856BS/DG/B3X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC856BS/DG/B3X?

For technical support, including BC856BS/DG/B3X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC856BS/DG/B3X requirements.

6.How does Aetrix verify that BC856BS/DG/B3X is sourced from the original manufacturer or authorized distributors?

All BC856BS/DG/B3X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC856BS/DG/B3X meets industry standards.

7.What is the process for return or replacement of BC856BS/DG/B3X?

All BC856BS/DG/B3X units undergo pre-shipment inspection (PSI). If there is an issue with BC856BS/DG/B3X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC856BS/DG/B3X part is unused and in its original packaging.

Return procedure for BC856BS/DG/B3X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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