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Nexperia USA Inc. BC856BS/DG/B4X
- Part No.:
- BC856BS/DG/B4X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BC856BS/DG/B4X.pdf
- Description:
- TRANS 2PNP 65V 100MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,524
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Product details
Overview
BC856BS/DG/B4X from Nexperia is a dual PNP general-purpose transistor pair in SOT363-3 (TSSOP6) package, rated for −65 V VCEO, −100 mA IC, and 200–450 hFE at −5 V VCE/−2 mA IC. It delivers matched gain, low VCE(sat) (−200 mV typ. at −100 mA/−5 mA), and <2.3 pF collector capacitance-used in compact dual-switching or differential amplification stages on space-constrained PCBs.
For engineers reviewing the BC856BS datasheet, BC856BS pinout, BC856BS application, or BC856BS equivalent, this device is selected for dual-channel discrete logic-level switching, current mirror biasing, and complementary-pair amplifier front-ends where thermal coupling and parameter matching between transistors reduce calibration overhead and improve stability.
Technical Context
The BC856BS integrates two electrically isolated PNP transistors in a single TSSOP6 package with no mutual interference-enabling independent biasing while sharing thermal mass. Its hFE matching (200–450 range per transistor) and low base-emitter saturation voltage (−755 mV typ. at −10 mA/−0.5 mA) support precise current mirroring and low-loss switching in rail-to-rail analog signal paths.
Designed for surface-mount assembly on FR4 PCBs, it features Rth(j-a) = 416 K/W (per device) and Ptot = 300 mW at Tamb ≤ 25 °C. The −6 V VEBO rating and −80 V VCBO allow safe operation in negative-rail interface circuits with transient overvoltage margins.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −65 V: Maximum collector-emitter blocking voltage under open-base conditions-supports use in −48 V telecom bias rails and industrial control outputs. |
| IC | −100 mA continuous: Sustained collector current capability-sufficient for driving LED arrays, small relays, or logic-level MOSFET gates. |
| hFE | 200–450 at −5 V VCE/−2 mA IC: Tight DC current gain spread enables predictable current mirror ratios without trimming. |
| VCE(sat) | −200 mV typ. at −100 mA/−5 mA: Low saturation voltage minimizes power loss and heat generation in high-duty-cycle switching. |
| Cc | 2.3 pF typ. at −10 V VCB: Low collector capacitance preserves bandwidth in RF-coupled preamplifier stages up to ~100 MHz. |
| Ptot | 300 mW per device on FR4 PCB: Enables dual-transistor operation without forced cooling in ambient temperatures up to +75 °C. |
Pinout & Package
SOT363-3 (TSSOP6) plastic surface-mounted package: 1.3 mm × 2.2 mm footprint, 0.65 mm pitch, 0.95 mm max height; designed for reflow soldering with standard stencil-defined paste volume.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 | Low-impedance current sink node for first transistor-connects directly to local ground or negative rail reference. |
| 2 | Base of TR1 | Current-controlled input for TR1-requires series resistor to limit IB to ≤200 mA peak during switching. |
| 3 | Collector of TR2 | High-side output node for second transistor-routes switched load current toward positive supply or pull-up network. |
| 4 | Emitter of TR2 | Independent emitter terminal for TR2-allows separate biasing or current sensing without shared path with TR1. |
| 5 | Base of TR2 | Isolated control input for TR2-enables asynchronous switching or differential pair configuration with TR1. |
| 6 | Collector of TR1 | Primary output node for TR1-configured as common-emitter switch or active load in amplifier topologies. |
Key Features
| Feature | Design Value |
|---|---|
| No mutual interference between transistors | Electrically isolated die layout ensures TR1 and TR2 operate independently-critical for precision current mirrors and dual-gain stages. |
| Closely matched current gain | hFE variation ≤ ±25% across both transistors at identical bias points-reduces offset in differential amplifiers. |
| Low collector-emitter saturation voltage | VCE(sat) ≤ −200 mV at IC = −100 mA-minimizes conduction loss in battery-powered load switches. |
| Low collector capacitance | Cc = 2.3 pF-preserves small-signal bandwidth in audio preamp and IF amplifier applications. |
| Reduces board space and component count | Dual-transistor integration cuts footprint by >40% vs. two discrete SOT23 devices-ideal for wearables and sensor nodes. |
Applications
| LED Driver Circuit | Differential Amplifier Bias |
|---|---|
Use Scenario: Driving dual-color indicator LEDs from microcontroller GPIO pins with independent on/off control. IC Role / Device Role / Timing Role: Dual PNP switch providing active-low current sinking for red/green LEDs with shared cathode connection. Use Value: Matched hFE ensures consistent brightness; low VCE(sat) maintains >95% efficiency at 20 mA per channel. |
Use Scenario: Establishing stable bias current in a discrete op-amp input stage using a current mirror topology. IC Role / Device Role / Timing Role: Dual PNP pair configured as cascoded current mirror to set input stage tail current and reject supply ripple. Use Value: Parameter matching reduces input offset drift; low Cc prevents phase shift in feedback loop above 1 MHz. |
| Level-Shifting Interface | Relay Driver Stage |
Use Scenario: Translating 3.3 V logic signals to −12 V control lines in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Dual PNP used as inverting level shifter with pull-up resistors to negative rail-TR1 inverts, TR2 buffers. Use Value: −65 V VCEO withstands back-EMF spikes; −6 V VEBO allows direct connection to −12 V rail without clamping diodes. |
Use Scenario: Switching 24 V DC relay coils in automotive body control units with fail-safe deactivation. IC Role / Device Role / Timing Role: TR1 drives relay coil via collector; TR2 monitors coil current through emitter sensing for open-load detection. Use Value: Independent emitters enable real-time current monitoring; 200 mA ICM peak rating handles relay turn-on surge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857BS | VCEO = −45 V, hFE = 220–475, VCE(sat) = −150 mV typ. at −100 mA | Lower breakdown voltage limits use in ≤−36 V systems; tighter hFE spread improves mirror accuracy. | Select when operating below −45 V and prioritizing gain matching over voltage margin. |
| MBT3906DW1T1G | VCEO = −40 V, hFE = 100–300, Cc = 4.0 pF, Ptot = 200 mW | Higher capacitance and lower power rating reduce bandwidth and thermal headroom in high-frequency or high-duty-cycle use. | Choose only for cost-sensitive, low-speed switching where −40 V rating suffices and layout area is not constrained. |
Compared with BC856BS, BC857BS trades 20 V breakdown margin for improved hFE consistency in current mirrors, while MBT3906DW1T1G offers lower unit cost but sacrifices bandwidth, power handling, and voltage robustness-making BC856BS optimal for mixed-signal interfaces requiring reliability across −65 V and 100 MHz domains.
Availability
BC856BS/DG/B4X is available at Aetrix Electronics and suitable for LED driver circuits, differential amplifier bias networks, level-shifting interfaces, and relay driver stages requiring stable component supply across automotive infotainment, industrial automation, and medical instrumentation programs.
Supply support for BC856BS/DG/B4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic ICs, with leadership in automotive-grade and industrial-standard components.
The BC856BS belongs to Nexperia's general-purpose bipolar transistor family, engineered for space-constrained analog and digital interface applications demanding matched performance, low parasitics, and robust SMT manufacturability.
FAQ
What is the maximum allowable junction temperature for BC856BS/DG/B4X?
The absolute maximum junction temperature (Tj) is 150 °C per the IEC 60134 limiting values table. Operation above this threshold risks permanent degradation of hFE and increased leakage currents. Derating begins at Tamb > 25 °C, with Ptot reduced linearly to zero at 150 °C junction temperature based on Rth(j-a) = 416 K/W for the device on FR4 PCB.
Can BC856BS/DG/B4X be used in linear amplifier configurations?
Yes-its specified hFE, VBE, and fT = 100 MHz at −10 mA make it suitable for low-noise, medium-bandwidth linear amplifiers. NF = 2.9 dB at 1 kHz and Cc = 2.3 pF support stable gain up to ~5 MHz; however, thermal dissipation must be managed below 300 mW to avoid gain drift and distortion.
How does the SOT363-3 package differ from standard SOT363?
The SOT363-3 variant features updated mechanical dimensions per revision history: refined lead coplanarity, tighter pitch tolerance (0.65 mm ±0.05 mm), and optimized solder pad land pattern for improved reflow yield. It replaces legacy SOT363 in all new designs and is not mechanically interchangeable with earlier SOT363 packages due to footprint differences.
Is BC856BS/DG/B4X automotive qualified?
No-this part is not AEC-Q101 qualified and carries no automotive qualification statement in its data sheet. Nexperia explicitly states in section 14 that non-automotive qualified products are unsuitable for safety-critical or life-support systems. For automotive use, consult Nexperia's AEC-Q101-certified equivalents such as the PBSS4041PAS.
BC856BS/DG/B4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 65V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 300mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BC856BS/DG/B4X FAQ
1.How can I place an order for BC856BS/DG/B4X through Aetrix?
Please submit a Request for Quotation (RFQ) for BC856BS/DG/B4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC856BS/DG/B4X reliable?
The price and inventory of BC856BS/DG/B4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC856BS/DG/B4X is usually 5 days.
3.What payment methods are accepted for BC856BS/DG/B4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC856BS/DG/B4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC856BS/DG/B4X?
BC856BS/DG/B4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC856BS/DG/B4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC856BS/DG/B4X?
For technical support, including BC856BS/DG/B4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC856BS/DG/B4X requirements.
6.How does Aetrix verify that BC856BS/DG/B4X is sourced from the original manufacturer or authorized distributors?
All BC856BS/DG/B4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC856BS/DG/B4X meets industry standards.
7.What is the process for return or replacement of BC856BS/DG/B4X?
All BC856BS/DG/B4X units undergo pre-shipment inspection (PSI). If there is an issue with BC856BS/DG/B4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC856BS/DG/B4X part is unused and in its original packaging.
Return procedure for BC856BS/DG/B4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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