Nexperia USA Inc. BC856BSH-QX

Overview

BC856BSH-QX from Nexperia is a dual PNP general-purpose transistor in SOT363 (SC-88) package, rated for −65 V V_CEO, −100 mA I_C, and 200–450 h_FE at −2 mA/−5 V; it delivers matched gain, low V_CE(sat) (−200 mV typ. at −100 mA), and operates up to 175 °C junction temperature-used in automotive signal switching and biasing networks.

For engineers reviewing the BC856BSH-QX datasheet, BC856BSH-QX pinout, BC856BSH-QX application, or BC856BSH-QX equivalent, this page provides verified electrical parameters, thermal derating curves, AEC-Q101 qualification status, dual-transistor isolation behavior, and SOT363 footprint layout guidance for high-reliability PCB design.

Technical Context

This device integrates two electrically isolated PNP transistors in one monolithic die with no mutual interference-enabling independent biasing and switching in compact analog front-ends. Its −65 V V_CEO and −80 V V_CBO support robust operation in 12 V/24 V automotive supply rails, while the 1.8 pF collector capacitance minimizes high-frequency coupling between channels.

The matched h_FE (200–450) and low −750 mV V_BE(sat) at −10 mA enable precise current mirroring and differential pair configurations. Thermal resistance R_th(j-a) is 375 K/W per device on FR4 PCB-critical for sustained operation in engine control modules and body electronics under ambient temperatures up to 125 °C.

Key Specifications

Pinout & Package

SOT363 (TSSOP6) plastic surface-mount package: 2.1 mm × 1.25 mm × 0.95 mm body, 0.65 mm lead pitch, 6-pin configuration with pin 1 index marker.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP transistor applications.

Compared with BC856BSH-QX, BC857BSH-Q trades voltage margin for higher gain in low-voltage domains, while MBT3906DW1T1G offers higher current but lacks automotive qualification-making BC856BSH-QX optimal for 24 V automotive switching where −65 V rating and AEC-Q101 compliance are mandatory.

Availability

BC856BSH-QX is available at Aetrix Electronics and suitable for automotive door modules, engine control units, body control modules, and chassis domain controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BC856BSH-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies-delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

BC856BSH-QX belongs to Nexperia's AEC-Q101-qualified general-purpose transistor family, engineered specifically for robust signal switching and biasing in harsh automotive environments with extended temperature and transient voltage demands.

FAQ

Is BC856BSH-QX pin-compatible with BC846BSH-Q?

No-BC856BSH-QX is a dual PNP device, while BC846BSH-Q is its NPN/NPN complement. Their pinouts differ: BC846BSH-Q assigns pins 1–3 to NPN1 (E-B-C) and pins 4–6 to NPN2 (E-B-C), whereas BC856BSH-QX uses pins 1–2–6 for TR1 (E-B-C) and pins 4–5–3 for TR2 (E-B-C). Direct substitution would invert logic polarity and cause circuit failure.

What is the maximum allowable power dissipation at 100 °C ambient temperature?

Per Figure 1 in the datasheet, the per-device power derating curve shows 400 mW at 25 °C ambient, linearly decreasing to approximately 220 mW at 100 °C ambient on FR4 PCB with standard footprint. This assumes single-sided 35 µm copper, tin-plated, and free-air convection cooling.

Does BC856BSH-QX support pulsed operation beyond its DC current rating?

Yes-its peak collector current I_CM is −200 mA for single pulses ≤1 ms (Table 5). At 20% duty cycle and 1 kHz frequency, transient thermal impedance data (Figure 2) confirms junction temperature rise remains within 175 °C limit when pulsed at −150 mA, enabling short-duration overload tolerance in motor stall detection circuits.

How does the −7 V V_EBO rating impact base drive design?

The −7 V emitter-base breakdown voltage limits reverse base-emitter voltage during fast turn-off or inductive kickback. To avoid damage, base drive circuits must clamp reverse voltage to <−6 V using Schottky diodes or active pull-down-especially critical in PWM-driven solenoid interfaces where flyback energy can exceed this threshold.