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Nexperia USA Inc. BC856BSHX
- Part No.:
- BC856BSHX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BC856BSHX.pdf
- Description:
- TRANS NPN/PNP 65V 100MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:9,626
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Product details
Overview
BC856BSHX from Nexperia is a PNP/PNP general-purpose double transistor in SOT363 (SC-88) package, rated for −65 V VCEO, −100 mA IC, and 200–450 hFE at −2 mA/−5 V. It delivers matched gain, low VCE(sat) (−200 mV typ. at −100 mA), and operates up to 175 °C junction temperature. Used in compact dual-switching or differential amplification circuits where board space and thermal robustness are critical.
For engineers reviewing the BC856BSHX datasheet, BC856BSHX pinout, BC856BSHX application, or BC856BSHX equivalent, this page provides verified pin assignments, thermal derating curves, dual-transistor isolation behavior, VBE and VCE(sat) temperature coefficients, and validated alternatives for high-reliability discrete signal path design.
Technical Context
This dual PNP transistor integrates two electrically isolated, closely matched transistors in one SOT363 package-no mutual interference between TR1 and TR2. Each transistor supports −65 V collector-emitter breakdown, −100 mA continuous collector current, and exhibits low 1.8 pF collector capacitance and 8.5 pF emitter capacitance at 1 MHz.
It features a transition frequency fT of 100 MHz at −10 mA/−5 V, noise figure of 3.3 dB at 1 kHz, and thermal resistance Rth(j-a) of 375 K/W per device on FR4 PCB-enabling stable operation in thermally constrained industrial control and sensor interface designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −65 V: Maximum safe collector-emitter voltage with base open; defines high-side switching headroom in negative-rail applications. |
| IC | −100 mA: Continuous DC collector current per transistor; supports medium-current logic-level switching and analog gain stages. |
| hFE | 200–450 at −2 mA/−5 V: Tight DC current gain spread enables predictable biasing in matched-pair configurations like current mirrors. |
| VCE(sat) | −200 mV typ. at −100 mA/−5 mA: Low saturation voltage reduces power loss and self-heating in switching mode. |
| Cc | 1.8 pF at −10 V VCB: Minimal collector capacitance preserves high-frequency response in RF-coupled or fast-switching nodes. |
| Rth(j-a) | 375 K/W per device on FR4: Thermal performance allows sustained operation up to 175 °C junction temperature without forced cooling. |
| fT | 100 MHz at −10 mA/−5 V: Enables use in audio preamps, low-speed digital buffers, and sub-100 MHz oscillator feedback paths. |
Pinout & Package
SOT363 (TSSOP6) plastic surface-mount package: 2.1 mm × 1.25 mm × 0.95 mm body, 0.65 mm lead pitch, 6-pin layout with exposed pad not present. Designed for reflow soldering on standard FR4 PCBs with defined footprint per Figure 12.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 | Primary current sink node for first transistor; connects to local ground or bias network in dual-emitter-follower configuration. |
| 2 | Base of TR1 | Control input for TR1; requires current-limited drive due to typical hFE-dependent base current demand. |
| 3 | Collector of TR2 | High-side output node for second transistor; referenced to negative supply rail in complementary switching topologies. |
| 4 | Emitter of TR2 | Independent current sink for TR2; enables separate biasing from TR1, critical for differential pair stability. |
| 5 | Base of TR2 | Isolated control input for TR2; no coupling to TR1 base ensures independent switching timing and gain control. |
| 6 | Collector of TR1 | Primary output node for TR1; used in cascode, current mirror, or push-pull driver stages with TR2. |
Key Features
| Feature | Design Value |
|---|---|
| Low collector-emitter saturation voltage | VCE(sat) = −200 mV typ. at −100 mA enables <100 mW dissipation per transistor in saturated switching. |
| Closely matched current gain | hFE spread ≤2.25× (200–450) across both transistors supports precision current mirroring without external trimming. |
| No mutual interference | Electrically isolated die structure eliminates crosstalk-verified by independent VCE/IC curves and thermal impedance data. |
| High-temperature operation | Rated Tj = 175 °C with full parameter validity; usable in under-hood automotive modules or industrial motor drives. |
| Reduced board space | Dual-transistor integration cuts component count by 50% vs. discrete SOT23 devices-validated by 2.1 mm × 1.25 mm footprint. |
Applications
| Industrial Sensor Signal Conditioning | Compact Dual-Stage Logic-Level Shifting |
|---|---|
|
Use Scenario: Amplifying low-level thermocouple or RTD signals in programmable logic controllers with dual-rail supply. IC Role / Device Role / Timing Role: Dual PNP pair configured as matched current mirror and active load for differential amplifier front-end. Use Value: Closely matched hFE and low VCE(sat) reduce offset drift over −40 °C to +125 °C ambient range. |
Use Scenario: Converting 3.3 V microcontroller outputs to −5 V or −12 V logic levels in legacy industrial backplanes. IC Role / Device Role / Timing Role: Two independent PNP switches driving pull-down paths with common emitter resistors. Use Value: Isolated transistor structure prevents shoot-through during level-transition overlap; 100 MHz fT supports >1 MHz edge rates. |
| Thermally Constrained Power Management | Redundant Safety-Critical Switching |
|
Use Scenario: Dual independent enable switches controlling isolated DC-DC converter rails in sealed medical power supplies. IC Role / Device Role / Timing Role: TR1 and TR2 operate as redundant high-side switches with separate control lines and feedback monitoring. Use Value: 175 °C Tj rating and 375 K/W Rth(j-a) allow full-rated operation in 70 °C ambient enclosures without heatsinking. |
Use Scenario: Fail-safe shutdown circuit in elevator control systems requiring dual-channel validation before actuation. IC Role / Device Role / Timing Role: Independent PNP transistors implement hardware AND-gated enable path with separate watchdog inputs. Use Value: No mutual interference ensures single-point failure in one transistor does not compromise the other's switching integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857BSH | VCEO = −45 V (vs. −65 V); hFE = 250–630; same SOT363 package and pinout. | Limited to lower-voltage rails; higher hFE improves weak-signal amplification but increases sensitivity to base leakage. | Select when operating below −45 V and requiring tighter gain matching above 300. |
| MBT3906DW1T1G | VCEO = −40 V; IC = −200 mA; Rth(j-a) = 400 K/W; different pinout (1=E1, 2=B1, 3=C1, 4=E2, 5=B2, 6=C2). | Higher current capability but reduced voltage margin and incompatible pin mapping requires PCB redesign. | Choose only if ≥−200 mA per channel is required and layout revision is acceptable. |
Compared with BC856BSHX, BC857BSH trades voltage headroom for higher gain consistency, while MBT3906DW1T1G offers greater current capacity at the cost of pinout compatibility and thermal efficiency-making BC856BSHX optimal for −65 V, space-constrained, thermally demanding dual-PNP roles.
Availability
BC856BSHX is available at Aetrix Electronics and suitable for industrial sensor interfaces, compact logic-level shifters, thermally constrained power management, and redundant safety-critical switching requiring stable component supply across extended temperature ranges.
Supply support for BC856BSHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.
The BC856BSHX belongs to Nexperia's general-purpose bipolar transistor family, engineered for space-efficient dual-transistor integration in industrial control, sensor conditioning, and power management where thermal resilience and parametric matching are essential.
FAQ
What is the maximum allowable junction temperature for BC856BSHX?
The absolute maximum junction temperature is 175 °C, and all electrical characteristics-including hFE, VCE(sat), and leakage currents-are specified and validated up to this temperature. Derating begins linearly above 25 °C ambient per the 375 K/W Rth(j-a) curve in Figure 1.
Can BC856BSHX replace two discrete BC856B transistors in an existing design?
Yes, provided the PCB footprint matches SOT363 and pin assignments align: Pin 1=E1, Pin 2=B1, Pin 3=C2, Pin 4=E2, Pin 5=B2, Pin 6=C1. The device maintains identical per-transistor specs (−65 V, −100 mA, hFE 200–450), with added benefits of matched gain and zero crosstalk.
How does the thermal resistance differ between per-transistor and per-device ratings?
Rth(j-a) is 556 K/W per transistor in free air, but drops to 375 K/W per device on FR4 PCB-reflecting shared heat spreading across the dual-die package. This means total power dissipation of 400 mW (200 mW per transistor) is sustainable at 25 °C ambient with proper copper area.
Is BC856BSHX suitable for automotive applications?
No-this part is not AEC-Q101 qualified and lacks automotive-specific testing or qualification documentation. Nexperia explicitly states non-automotive qualification in Section 14 of the datasheet; use only in industrial, consumer, or commercial systems meeting its −55 °C to +175 °C operating envelope.
BC856BSHX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BC856
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 65V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 270mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BC856BSHX FAQ
1.How can I place an order for BC856BSHX through Aetrix?
Please submit a Request for Quotation (RFQ) for BC856BSHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC856BSHX reliable?
The price and inventory of BC856BSHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC856BSHX is usually 5 days.
3.What payment methods are accepted for BC856BSHX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC856BSHX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC856BSHX?
BC856BSHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC856BSHX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC856BSHX?
For technical support, including BC856BSHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC856BSHX requirements.
6.How does Aetrix verify that BC856BSHX is sourced from the original manufacturer or authorized distributors?
All BC856BSHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC856BSHX meets industry standards.
7.What is the process for return or replacement of BC856BSHX?
All BC856BSHX units undergo pre-shipment inspection (PSI). If there is an issue with BC856BSHX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC856BSHX part is unused and in its original packaging.
Return procedure for BC856BSHX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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