Nexperia USA Inc. BC856S,125

Overview

BC856S,125 from Nexperia is a dual PNP general-purpose transistor pair in SOT363-3 (TSSOP6) package, rated for −65 V V_CEO, −100 mA I_C, and 250 mW P_tot per device, with closely matched h_FE (110 min at −2 mA), low V_CE(sat) (−300 mV max at −100 mA), and isolated operation-used in compact dual-switching circuits such as LED driver bias networks and complementary logic level translators.

For engineers reviewing the BC856S,125 datasheet, BC856S,125 pinout, BC856S,125 application, or BC856S,125 equivalent, key selection criteria include verified dual-transistor isolation, thermal derating on FR4 PCBs, matching tolerance between TR1/TR2 current gain, and compatibility with standard reflow footprints for TSSOP6.

Technical Context

This dual PNP transistor pair integrates two electrically isolated transistors in a single SOT363-3 package, eliminating mutual interference while maintaining identical electrical characteristics across both devices. Each transistor supports V_CEO = −65 V, I_C = −100 mA, and operates with h_FE ≥ 110 at −2 mA collector current and −5 V V_CE.

Thermal performance is defined for two mounting conditions: R_th(j-a) = 500 K/W (with 1 cm² collector pad) and 568 K/W (standard footprint), enabling precise junction temperature estimation under pulsed or DC bias. The device exhibits C_c = 2.5 pF and f_T = 100 MHz, supporting high-frequency switching up to low-MHz range.

Key Specifications

Pinout & Package

SOT363-3 (TSSOP6) is a 6-pin, surface-mount plastic package with 0.65 mm pitch, 2.2 mm × 1.3 mm body size, and exposed pad-compatible footprint per Figure 11 (reflow) and Figure 12 (wave soldering).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP transistor applications.

Compared with BC856S,125, BC857S,125 offers higher and wider h_FE range for improved base drive margin, while MBT3906DW1T1G trades pin compatibility for higher current rating and different thermal profile-neither is drop-in, but both address distinct design trade-offs in dual-PNP implementation.

Availability

BC856S,125 is available at Aetrix Electronics and suitable for LED driver bias networks, dual-channel level translators, complementary switch pairs, and discrete op-amp input stages requiring stable component supply across production lifecycles.

Supply support for BC856S,125 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

The BC856S belongs to Nexperia's general-purpose bipolar transistor family, engineered for space-constrained consumer, computing, and industrial applications demanding matched dual-transistor performance in ultra-small packages.

FAQ

What is the maximum continuous collector current per transistor in BC856S,125?

The BC856S,125 supports −100 mA continuous collector current per transistor under ambient temperature ≤25 °C with proper PCB thermal relief. Derating applies above 25 °C per Figure 1's power curves-e.g., at 75 °C ambient, max I_C drops to approximately −70 mA for 250 mW-rated operation.

Is BC856S,125 pin-compatible with BC846S or BC847S series?

No-BC856S,125 uses SOT363-3 with pinout E1-B1-C2-E2-B2-C1, whereas BC846S/BC847S dual NPN variants share the same physical package but reverse polarity and differ in internal transistor assignment. Swapping them causes functional failure due to mismatched emitter/base/collector mapping.

Does BC856S,125 support automotive-grade temperature operation?

No-BC856S,125 is not AEC-Q101 qualified. Its specified operating ambient temperature range is −65 °C to +150 °C, but Nexperia explicitly states in Section 14 that non-automotive-qualified products are unsuitable for safety-critical or automotive applications unless separately validated by the customer.

How does the thermal resistance differ between per-transistor and per-device ratings?

R_th(j-a) is 500 K/W per transistor with 1 cm² collector pad (enhanced cooling), versus 568 K/W per transistor on standard FR4 footprint. Per device (both transistors), total P_tot is 400 mW with corresponding R_th(j-a) values of 313 K/W and 416 K/W-critical for calculating worst-case junction temperature in dual-load scenarios.