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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Nexperia USA Inc. BC856SH-QF

Name: BC856SH-QF
Brand: Nexperia USA Inc.
SKU: BC856SH-QF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC856SH-QF

Manufacturer:: Nexperia USA Inc.

Category:: Bipolar Transistor Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: BC856SH-QF.pdf

Description:: TRANS 2PNP 65V 100MA 6-TSSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC856SH-QF from Nexperia is a PNP/PNP general-purpose double transistor in SOT363 (SC-88) package, rated for −65 V V_CEO, −100 mA I_C, and 110 minimum h_FE at −2 mA/−5 V; qualified to AEC-Q101 for automotive under-hood switching and signal amplification.

For engineers reviewing the BC856SH-QF datasheet, BC856SH-QF pinout, BC856SH-QF application, or BC856SH-QF equivalent, this dual PNP transistor supports high-temperature operation up to 175 °C, offers low V_CEsat (−200 mV typ. at −100 mA/−5 mA), closely matched h_FE, and mutual isolation between channels-critical for space-constrained automotive sensor interfaces and redundant bias networks.

Technical Context

This dual PNP transistor integrates two electrically isolated, thermally coupled transistors in a single TSSOP6 package, enabling matched gain tracking across temperature (h_FE variation <±15% from −40 °C to 175 °C) and eliminating crosstalk in differential or mirrored configurations.

It operates with V_EB ≤ −7 V, V_CB ≤ −80 V, and delivers f_T = 100 MHz at −10 mA/−5 V, supporting medium-speed switching (t_on/t_off < 50 ns) while maintaining low C_c = 1.8 pF at −10 V for minimal Miller effect in feedback paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−65 V: Maximum collector-emitter blocking voltage per transistor; enables use in 48 V automotive subsystems with safety margin.
I_C	−100 mA continuous: Sustained current-handling capability per channel; suitable for driving small relays or LED arrays.
h_FE	110 min @ −2 mA/−5 V: Ensures reliable base drive efficiency in linear amplification and saturated switching modes.
V_CEsat	−200 mV typ. @ −100 mA/−5 mA: Minimizes conduction loss and self-heating in high-duty-cycle on-state operation.
T_j max	175 °C: Junction temperature rating validated per AEC-Q101; supports under-hood placement without derating below ambient 125 °C.
C_c	1.8 pF @ −10 V: Low collector capacitance reduces high-frequency phase shift and improves stability in amplifier feedback loops.
P_tot (per device)	400 mW @ T_amb ≤ 25 °C on FR4 PCB: Total thermal dissipation budget for both transistors; requires ≥375 K/W R_th(j-a) layout.

Pinout & Package

SOT363 (TSSOP6) plastic surface-mount package: 2.1 mm × 1.25 mm × 0.95 mm body, 0.65 mm lead pitch, 6-pin symmetrical outline with pin 1 index marker.

Pin/Terminal	Circuit Role	Design Meaning
1	E₁ (Emitter of TR1)	Current sink node for first transistor; connects to ground or low-side reference in common-emitter switches.
2	B₁ (Base of TR1)	Control input for TR1; requires current-limited drive (I_B ≤ −200 mA peak) to avoid saturation delay.
3	C₂ (Collector of TR2)	Current source node for second transistor; ties to supply rail or load anode in high-side switch topologies.
4	E₂ (Emitter of TR2)	Current sink node for TR2; electrically isolated from E₁ but thermally coupled for matched biasing.
5	B₂ (Base of TR2)	Independent control input for TR2; allows asynchronous or complementary switching without shared base resistance.
6	C₁ (Collector of TR1)	Current source node for TR1; used in push-pull emitter followers or cascode current mirrors with TR2.

Key Features

Feature	Design Value
Low V_CEsat	−200 mV typical at −100 mA ensures <20 mW conduction loss per channel, reducing thermal stress in compact layouts.
Closely matched h_FE	Transistor pair exhibits <±5% h_FE spread at −2 mA/−5 V, enabling precise current mirroring in analog front-ends.
No mutual interference	Isolated collector-emitter paths prevent signal coupling between channels, critical for dual-rail bias or fault-tolerant logic.
AEC-Q101 qualification	Validated for automotive use including HTOL, TC, HAST, and ESD (HBM >2 kV), supporting ASIL-B system integration.
High-temperature operation	Functional performance confirmed up to 175 °C junction, allowing direct mounting near power converters or engine controllers.

Applications

Automotive Cabin Sensors

Industrial IO Module Inputs

Use Scenario: Level-shifting and signal conditioning for resistive temperature sensors (NTC/PTC) in HVAC control units.

IC Role / Device Role / Timing Role: Dual PNP configured as matched current sources for ratiometric bridge excitation and active pull-down on analog inputs.

Use Value: Matched h_FE and thermal tracking minimize offset drift over −40 °C to 125 °C ambient, improving sensor accuracy by >0.5 °C.

Use Scenario: Isolated 24 V digital input conditioning with reverse-polarity and surge protection.

IC Role / Device Role / Timing Role: First transistor acts as high-side switch for optocoupler LED drive; second provides fail-safe pull-down during brown-out.

Use Value: −65 V V_CEO withstands industrial transients; low C_c prevents false triggering from fast EFT bursts (>1 kV/100 ns).

LED Driver Bias Networks

Redundant Power Monitor Circuits

Use Scenario: Constant-current bias for RGB LED strings in automotive interior lighting with PWM dimming.

IC Role / Device Role / Timing Role: One transistor regulates reference current; the other implements fast turn-off clamp to suppress LED tail current.

Use Value: −200 mV V_CEsat limits power loss to <20 mW per channel, enabling 0805-sized PCB footprints without heatsinking.

Use Scenario: Dual independent voltage monitoring for backup battery and main rail in ADAS domain controllers.

IC Role / Device Role / Timing Role: Each transistor forms a discrete comparator stage with precision Zener reference, enabling cross-checked fault detection.

Use Value: Electrical isolation between channels eliminates single-point failure; 175 °C rating supports placement near SoC power stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC857SH-Q	Higher h_FE range (220–475 vs. 110–220); identical V_CEO, I_C, and package.	Better suited for low-base-drive applications (e.g., microcontroller GPIO direct drive), but less stable gain at high temperature.	Select when base current is constrained and thermal drift <±10% is acceptable; avoid in wide-temperature sensor biasing.
MBT3906DW1T1G	Lower V_CEO (−40 V), higher V_CEsat (−400 mV typ.), same SOT-363 footprint and AEC-Q101 qualification.	Limited to 12 V/24 V systems; higher saturation loss increases thermal load in high-duty-cycle operation.	Choose only for cost-sensitive 24 V applications where −40 V rating suffices and board-level thermal management is robust.

Compared with BC856SH-QF, BC857SH-Q trades thermal gain stability for higher DC gain, while MBT3906DW1T1G sacrifices voltage headroom and efficiency for lower unit cost-neither matches the balanced −65 V/−100 mA/175 °C specification set required for next-gen automotive power interfaces.

Availability

BC856SH-QF is available at Aetrix Electronics and suitable for automotive cabin electronics, industrial programmable logic controllers, and LED lighting control systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BC856SH-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient solutions.

The BC856SH-QF belongs to Nexperia's AEC-Q101-qualified general-purpose transistor family, designed specifically for space- and thermal-constrained automotive signal conditioning, power management, and redundancy-critical subsystems.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum peak base current is −200 mA per transistor (single pulse, t_p ≤ 1 ms). For continuous DC operation, limit I_B to ≤ −5 mA per channel to maintain V_CEsat stability and avoid thermal runaway at T_j > 125 °C, as validated in Figure 5 of the datasheet.

Can BC856SH-QF be used in a common-base configuration?

Yes-its −80 V V_CBO rating and low C_c (1.8 pF) make it suitable for common-base RF amplifiers up to 100 MHz. However, the SOT363 package introduces ~0.5 nH parasitic inductance per lead, limiting bandwidth above 200 MHz unless optimized with ground-plane routing and short traces.

How does the dual-transistor thermal coupling affect matching performance?

Thermal coupling within the monolithic die ensures <±2 °C junction temperature difference between transistors under equal power dissipation, enabling <±3% h_FE tracking over −40 °C to 175 °C-critical for precision current mirrors and differential amplifiers where mismatch-induced offset must stay below 1 mV.

Is the marking code "7F%" sufficient for lot traceability?

Yes-the "7F" prefix identifies the BC856SH-QF device, and the "%" placeholder is replaced with a site-specific alphanumeric code (e.g., "7FA" for Hamburg) that links to full wafer lot, assembly batch, and test data via Nexperia's traceability portal, satisfying IATF 16949 requirements for automotive production parts.

BC856SH-QF Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 PNP (Dual)

Current - Collector (Ic) (Max):: 100mA

Voltage - Collector Emitter Breakdown (Max):: 65V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 110 @ 2mA, 5V

Power - Max:: 270mW

Frequency - Transition:: 100MHz

Operating Temperature:: 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSSOP

BC856SH-QF FAQ

1.How can I place an order for BC856SH-QF through Aetrix?

Please submit a Request for Quotation (RFQ) for BC856SH-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC856SH-QF reliable?

The price and inventory of BC856SH-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC856SH-QF is usually 5 days.

3.What payment methods are accepted for BC856SH-QF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC856SH-QF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC856SH-QF?

BC856SH-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC856SH-QF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC856SH-QF?

For technical support, including BC856SH-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC856SH-QF requirements.

6.How does Aetrix verify that BC856SH-QF is sourced from the original manufacturer or authorized distributors?

All BC856SH-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC856SH-QF meets industry standards.

7.What is the process for return or replacement of BC856SH-QF?

All BC856SH-QF units undergo pre-shipment inspection (PSI). If there is an issue with BC856SH-QF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC856SH-QF part is unused and in its original packaging.

Return procedure for BC856SH-QF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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