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Nexperia USA Inc. BC856SHX

Part No.:
BC856SHX
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixBC856SHX.pdf
Description:
TRANS 2PNP 65V 100MA 6-TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,135

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Product details

Overview

BC856SH from Nexperia is a PNP/PNP general-purpose double transistor in SOT363 (SC-88) package, rated for −65 V VCEO, −100 mA IC, and 110 minimum hFE at −2 mA/−5 V; it delivers matched gain, low VCE(sat) (−200 mV typ. at −100 mA), and operates up to 175 °C junction temperature - used in compact dual-switching nodes of power management and signal routing circuits.

For engineers reviewing the BC856SH datasheet, BC856SH pinout, BC856SH application, or BC856SH equivalent, this page provides verified pin mapping, thermal derating curves, per-transistor limiting values, and validated alternatives for space-constrained dual-PNP switching designs requiring high-temperature stability and low mutual interference.

Technical Context

The BC856SH integrates two electrically isolated PNP transistors in a single TSSOP6 package with no shared substrate coupling, enabling independent biasing and switching control. Each transistor supports −65 V collector-emitter breakdown and −80 V collector-base rating under open-base/open-emitter conditions.

Its DC current gain (hFE) is tightly matched across devices and stable from −40 °C to 175 °C, with VCE(sat) as low as −200 mV at IC = −100 mA and IB = −5 mA (pulsed), and Cc = 1.8 pF typical at VCB = −10 V, supporting high-frequency switching up to 100 MHz fT.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −65 V - maximum safe collector-emitter voltage per transistor with base open; defines off-state blocking capability in switching applications.
IC −100 mA - continuous DC collector current per transistor; sets upper limit for steady-state load drive without thermal runaway.
hFE 110 min at VCE = −5 V, IC = −2 mA - ensures reliable current amplification in linear and active-region biasing schemes.
VCE(sat) −200 mV typ. at IC = −100 mA, IB = −5 mA - enables low conduction loss in saturated-switch mode, reducing power dissipation.
fT 100 MHz - transition frequency at VCE = −5 V, IC = −10 mA; supports RF and fast digital switching up to ~10–20 MHz practical bandwidth.
Rth(j-a) (per device) 375 K/W - junction-to-ambient thermal resistance on FR4 PCB; determines max power dissipation (400 mW) before exceeding 175 °C Tj.
Cc 1.8 pF typ. at VCB = −10 V - low collector capacitance minimizes Miller effect and improves high-speed turn-off performance.

Pinout & Package

SOT363 (TSSOP6) plastic surface-mount package: 6-pin, 0.65 mm pitch, 2.1 mm × 1.25 mm × 0.95 mm body; designed for reflow and wave soldering with defined footprint per Figures 12–13.

Pin/Terminal Circuit Role Design Meaning
1 Emitter of TR1 Low-impedance current sink node for first transistor; connects to load return or reference rail in common-emitter configuration.
2 Base of TR1 Control input for TR1; requires current-limited drive (e.g., via series resistor) to achieve target IC based on hFE.
3 Collector of TR2 High-side output node for second transistor; connects to supply rail when TR2 operates in emitter-follower or switch mode.
4 Emitter of TR2 Current sink for TR2; electrically isolated from E1, enabling independent grounding or floating bias networks.
5 Base of TR2 Independent control input for TR2; no coupling to B1 ensures simultaneous or staggered switching without crosstalk.
6 Collector of TR1 Primary output node for TR1; routed to load or next-stage input; layout must minimize trace inductance for fast switching.

Key Features

Feature Design Value
Low collector-emitter saturation voltage VCE(sat) ≤ −200 mV at IC = −100 mA enables <100 mW conduction loss per transistor in saturated switching.
Closely matched hFE between TR1 and TR2 Ensures consistent current gain across both transistors, critical for balanced differential or push-pull output stages.
No mutual interference Electrically isolated die structure eliminates substrate coupling, preserving signal integrity in mixed-signal routing.
High-temperature operation Rated for Tj up to 175 °C supports use in under-hood automotive modules, industrial motor controls, and enclosed power supplies.
Reduced board space Dual-transistor integration cuts component count by one vs. discrete SOT23 pairs, saving ≥3 mm² PCB area and assembly steps.

Applications

LED Driver Pair Level-Shifting Switch

Use Scenario: Driving dual-color LED indicators with independent anode control in space-limited UI panels.

IC Role / Device Role / Timing Role: Dual PNP switch providing low-side sinking for red/green LEDs with separate enable lines.

Use Value: Eliminates need for two discrete SOT23 transistors and associated passives, reducing BOM count and layout complexity while maintaining <200 mV dropout.

Use Scenario: Converting 3.3 V logic outputs to −5 V or −12 V level-shifted signals in legacy interface circuits.

IC Role / Device Role / Timing Role: Complementary PNP pair configured as active-low level shifter with pull-up resistors on collector outputs.

Use Value: Enables bidirectional voltage translation without external bias networks, leveraging matched hFE for consistent rise/fall symmetry.

Dual-Channel Load Switch Temperature-Stable Bias Network

Use Scenario: Isolated power gating for two independent 5 V peripherals in battery-powered IoT sensor hubs.

IC Role / Device Role / Timing Role: Two independent high-side switches controlling VCC delivery to sensors and radios.

Use Value: Single-package solution meets 175 °C ambient requirement for enclosed enclosures and reduces thermal mismatch vs. discrete solutions.

Use Scenario: Generating stable reference currents in precision analog front-ends operating across −40 °C to +125 °C.

IC Role / Device Role / Timing Role: Matched PNP pair in current mirror configuration with shared base bias.

Use Value: Tight hFE tracking and low VBE tempco (−2 mV/K) ensure <±2% current ratio drift over full temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-PNP switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC857SH Higher hFE (200 min vs. 110 min); same VCEO/IC ratings and SOT363 package. Better suited for low-drive applications where base current must be minimized (e.g., microcontroller GPIO direct drive). Select BC857SH when gain >200 is required at IC = −2 mA; otherwise BC856SH offers tighter matching tolerance in production lots.
MBT3906DW1T1G Same dual-PNP topology but rated for −40 V VCEO and −200 mA IC; higher Ptot (500 mW) in SC-70-6. Preferred for higher-current switching (>100 mA) at lower voltage (<40 V), but not drop-in due to different pinout (E1-B1-C1-E2-B2-C2). Choose MBT3906DW1T1G only if higher current handling is needed and PCB layout allows SC-70-6 footprint and pin remapping.

Compared with BC856SH, BC857SH trades marginally higher gain for slightly reduced hFE matching consistency, while MBT3906DW1T1G sacrifices voltage rating and pin compatibility for increased current capacity - making BC856SH optimal for 65 V, space-constrained, thermally demanding dual-switch designs.

Availability

BC856SH is available at Aetrix Electronics and suitable for LED driver pairs, level-shifting switches, dual-channel load switches, and temperature-stable bias networks requiring stable component supply and guaranteed long-term sourcing.

Supply support for BC856SH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

The BC856SH belongs to Nexperia's general-purpose bipolar transistor family, engineered for compact, high-reliability dual-transistor switching in thermally demanding environments where board space and thermal stability are critical.

FAQ

What is the maximum allowable junction temperature for BC856SH?

The absolute maximum junction temperature (Tj) is 175 °C, as specified in Table 5 (Limiting Values). Operation at this temperature requires strict adherence to the per-device power derating curve in Figure 1 - at 100 °C ambient, maximum dissipation drops to ~200 mW to maintain Tj ≤ 175 °C on standard FR4 PCB.

Can BC856SH replace two discrete BC856B transistors in a design?

Yes, BC856SH replaces two BC856B SOT23 transistors with identical per-transistor specifications (VCEO = −65 V, IC = −100 mA, hFE = 110–220), but requires PCB redesign for SOT363 footprint and pin mapping (E1-B1-C2-E2-B2-C1). No electrical revalidation is needed beyond layout verification.

Does BC856SH support pulsed operation above its DC current rating?

Yes - peak collector current (ICM) is rated at −200 mA for single pulses ≤1 ms (Table 5). This allows short-duration surge handling (e.g., inductive kickback suppression), provided average power remains within 400 mW per device and thermal impedance limits are observed per Figure 2.

Is BC856SH automotive qualified?

No - the datasheet does not state automotive qualification (AEC-Q101), and Nexperia's legal disclaimers explicitly note that non-automotive qualified products are "not suitable for automotive use." It lacks automotive-grade testing, traceability, and extended temperature validation required for under-hood deployment.

BC856SHX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
BC856
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
2 PNP (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
65V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
110 @ 2mA, 5V
Power - Max:
270mW
Frequency - Transition:
100MHz
Operating Temperature:
175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

BC856SHX FAQ

1.How can I place an order for BC856SHX through Aetrix?

Please submit a Request for Quotation (RFQ) for BC856SHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC856SHX reliable?

The price and inventory of BC856SHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC856SHX is usually 5 days.

3.What payment methods are accepted for BC856SHX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC856SHX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC856SHX?

BC856SHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC856SHX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC856SHX?

For technical support, including BC856SHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC856SHX requirements.

6.How does Aetrix verify that BC856SHX is sourced from the original manufacturer or authorized distributors?

All BC856SHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC856SHX meets industry standards.

7.What is the process for return or replacement of BC856SHX?

All BC856SHX units undergo pre-shipment inspection (PSI). If there is an issue with BC856SHX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC856SHX part is unused and in its original packaging.

Return procedure for BC856SHX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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