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Nexperia USA Inc. BC857BSH-QF
- Part No.:
- BC857BSH-QF
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BC857BSH-QF.pdf
- Description:
- TRANS 2PNP 45V 100MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,317
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Product details
Overview
BC857BSH-QF from Nexperia is a PNP/PNP general-purpose double transistor in SOT363 (SC-88) package, rated for −45 V VCEO, −100 mA IC, and 200–450 hFE at −2 mA/−5 V. It delivers matched current gain, low VCE(sat) (−200 mV typ. at −100 mA), and operates up to 175 °C junction temperature. Used in dual-channel automotive signal switching and biasing circuits where space-constrained dual PNP functionality is required.
For engineers reviewing the BC857BSH-QF datasheet, BC857BSH-QF pinout, BC857BSH-QF application, or BC857BSH-QF equivalent, this page provides verified pin functions, AEC-Q101 qualification status, thermal derating curves, dual-transistor isolation behavior, and automotive-grade reliability data - all critical for high-reliability dual-switch design validation.
Technical Context
This device integrates two electrically isolated PNP transistors in a single SOT363 package with no mutual interference, enabling independent control of two signal paths. Each transistor supports −45 V collector-emitter breakdown, −100 mA continuous collector current, and exhibits closely matched hFE (200–450) across units and temperature (−40 °C to +175 °C).
Its low collector capacitance (1.8 pF typ.) and base-emitter saturation voltage (−875 mV typ. at −100 mA) support fast switching in low-power analog and digital interface stages. Thermal resistance Rth(j-a) is 375 K/W per device on FR4 PCB, enabling stable operation under sustained ambient temperatures up to +175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −45 V - Maximum safe collector-emitter voltage per transistor before breakdown; defines voltage headroom in high-side switch or level-shift applications. |
| IC | −100 mA - Continuous DC collector current rating per transistor; sets maximum load drive capability in linear or saturated switching modes. |
| hFE | 200–450 - DC current gain at VCE = −5 V, IC = −2 mA; enables predictable base drive sizing and ensures consistent gain matching between dual transistors. |
| VCE(sat) | −200 mV (typ.) at IC = −100 mA, IB = −5 mA - Low saturation voltage minimizes power loss and heating in high-duty-cycle switching applications. |
| Tj(max) | +175 °C - Maximum junction temperature; supports operation in under-hood automotive environments without derating below +125 °C ambient. |
| Cc | 1.8 pF (typ.) at VCB = −10 V - Low collector capacitance preserves high-frequency response and reduces Miller effect in amplifier or oscillator stages. |
Pinout & Package
SOT363 (SC-88/TSSOP6) plastic surface-mount package: 2.1 mm × 1.25 mm × 0.95 mm body, 0.65 mm lead pitch, 6-pin configuration with gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 | Current sink node for first transistor; connects to local ground or bias reference in dual-switch topologies. |
| 2 | Base of TR1 | Control input for TR1; requires current-limited drive due to VBE(sat) ≈ −875 mV at full load. |
| 3 | Collector of TR2 | High-side output node for second transistor; referenced to supply rail in common-emitter or emitter-follower configurations. |
| 4 | Emitter of TR2 | Current sink node for second transistor; electrically isolated from E1, enabling independent bias networks. |
| 5 | Base of TR2 | Independent control input for TR2; no coupling to B1 ensures simultaneous or staggered switching without crosstalk. |
| 6 | Collector of TR1 | High-side output node for first transistor; paired with C3 to implement dual high-side switches or complementary driver pairs. |
Key Features
| Feature | Design Value |
|---|---|
| Low collector-emitter saturation voltage | VCE(sat) = −200 mV typ. at −100 mA enables <10 mW conduction loss per transistor, reducing thermal load in dense PCB layouts. |
| Closely matched current gain | hFE spread ≤ 2.25× (200–450) across both transistors ensures balanced current sharing and identical switching thresholds in dual-path designs. |
| No mutual interference | Electrically isolated die structure eliminates capacitive or resistive coupling between TR1 and TR2, preserving signal integrity in mixed-signal timing paths. |
| AEC-Q101 qualified | Stress-tested per Automotive Electronics Council standard for discrete semiconductors, validating suitability for engine control, body electronics, and ADAS subsystems. |
Applications
| Automotive Body Control Module (BCM) | Industrial Sensor Signal Conditioning |
|---|---|
Use Scenario: Dual-channel LED driver and relay interface in door module PCBs with space constraints. IC Role / Device Role / Timing Role: Dual PNP switch controlling separate 12 V indicator LEDs and small solenoid loads. Use Value: Single SOT363 replaces two discrete SOT23 devices, saving 3.2 mm² board area while maintaining AEC-Q101 compliance and thermal margin up to +105 °C ambient. |
Use Scenario: Dual-stage current mirror and offset compensation in 4–20 mA transmitter front-end. IC Role / Device Role / Timing Role: Matched PNP pair providing precise current replication and temperature-stable bias for op-amp input stage. Use Value: hFE matching and low VCE(sat) ensure <±0.5% current error over −40 °C to +85 °C, eliminating need for external trimming. |
| Consumer Appliance Power Sequencing | Medical Infusion Pump Motor Control |
Use Scenario: Dual-rail power-up sequencing for microcontroller and display subsystems in smart home hubs. IC Role / Device Role / Timing Role: Independent PNP switches enabling controlled enable/disable of 3.3 V and 5 V LDO outputs. Use Value: Pin-isolated bases allow separate RC delay networks on B1/B2, achieving ±10 µs sequencing accuracy without cross-talk-induced timing jitter. |
Use Scenario: Dual H-bridge half-bridge pre-driver in battery-powered infusion pump motor controller. IC Role / Device Role / Timing Role: High-side PNP drivers for N-channel MOSFET gates in bidirectional DC motor control path. Use Value: −45 V VCEO and 175 °C Tj(max) support 24 V system operation with safety margin during stall conditions and sterilization cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857BDSH-Q | Same electrical specs but in SOT353 (SC-70) 5-pin package with shared emitter (E1=E2); lacks pin isolation between transistors. | Not suitable for applications requiring independent emitter bias or galvanic separation between channels. | Select only when board space is tighter than SOT363 and dual-emitter independence is unnecessary. |
| MBT3906DW1T1G | −40 V VCEO, −200 mA IC, hFE = 100–300; SOT363 package but not AEC-Q101 qualified; higher VCE(sat) (−400 mV min). | Lacks automotive qualification and has lower voltage margin; acceptable only in non-safety-critical industrial use. | Choose only if higher current drive is needed and AEC-Q101 compliance is not required. |
Compared with BC857BDSH-Q, BC857BSH-QF provides true dual-emitter isolation and superior gain matching; versus MBT3906DW1T1G, it offers AEC-Q101 certification, −45 V rating, and lower saturation voltage - making it the sole choice for automotive dual-switch designs demanding reliability and precision.
Availability
BC857BSH-QF is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, consumer appliance power sequencing, and medical motor control systems requiring stable component supply and long-term lifecycle assurance.
Supply support for BC857BSH-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.
BC857BSH-QF belongs to Nexperia's AEC-Q101-qualified general-purpose transistor family, engineered specifically for space-constrained dual-channel switching and amplification in harsh-environment automotive and industrial applications.
FAQ
Is BC857BSH-QF pin-compatible with BC847BSH-Q?
No. BC857BSH-QF is a PNP/PNP dual transistor, while BC847BSH-Q is its NPN/NPN complement. Their pinouts differ: BC847BSH-Q uses pin 1 as C1, whereas BC857BSH-QF uses pin 1 as E1. Direct substitution would reverse polarity and cause circuit failure. They are functional complements, not pin-compatible replacements.
What is the maximum allowable base current for continuous operation?
The absolute maximum peak base current is −200 mA (single pulse, tp ≤ 1 ms), but for continuous DC operation, base current must be limited to maintain IC ≤ −100 mA and Tj ≤ +175 °C. At IC = −100 mA and hFE = 200 (min), required IB is −0.5 mA; practical design uses −1–2 mA to ensure saturation across temperature and unit variation.
Does BC857BSH-QF support wave soldering?
Yes. The SOT363 package is qualified for both reflow and wave soldering. Figure 13 in the datasheet provides the recommended wave soldering footprint: 5.3 mm × 2.45 mm pad layout with 1.3 mm solder mask openings and 0.3 mm solder resist web. Preheat and dwell time must comply with IPC-J-STD-020 for MSL1 handling.
How does thermal derating work above 25 °C ambient?
Per Figure 1, total device power dissipation derates linearly from 400 mW at Tamb = 25 °C to 0 mW at Tamb = 135 °C on FR4 PCB. Derating slope is −3.75 mW/°C. At 85 °C ambient, max allowed Ptot = 400 − (85−25)×3.75 = 175 mW - requiring careful layout with thermal vias or copper pour to avoid exceeding Tj = 175 °C.
BC857BSH-QF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 270mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BC857BSH-QF FAQ
1.How can I place an order for BC857BSH-QF through Aetrix?
Please submit a Request for Quotation (RFQ) for BC857BSH-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC857BSH-QF reliable?
The price and inventory of BC857BSH-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857BSH-QF is usually 5 days.
3.What payment methods are accepted for BC857BSH-QF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC857BSH-QF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC857BSH-QF?
BC857BSH-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC857BSH-QF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC857BSH-QF?
For technical support, including BC857BSH-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857BSH-QF requirements.
6.How does Aetrix verify that BC857BSH-QF is sourced from the original manufacturer or authorized distributors?
All BC857BSH-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857BSH-QF meets industry standards.
7.What is the process for return or replacement of BC857BSH-QF?
All BC857BSH-QF units undergo pre-shipment inspection (PSI). If there is an issue with BC857BSH-QF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC857BSH-QF part is unused and in its original packaging.
Return procedure for BC857BSH-QF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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