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Nexperia USA Inc. BC857BSHX

Part No.:
BC857BSHX
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixBC857BSHX.pdf
Description:
TRANS 2PNP 45V 100MA 6-TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,056

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Product details

Overview

BC857BSHX from Nexperia is a PNP/PNP general-purpose double transistor in SOT363 (SC-88) package, rated for −45 V VCEO, −100 mA IC, and 200–450 hFE per transistor. It delivers matched gain, low VCE(sat) (−200 mV typ. at −100 mA), and operates up to 175 °C junction temperature-ideal for space-constrained dual-switching or amplification stages in industrial control and power management circuits.

For engineers reviewing the BC857BSHX datasheet, BC857BSHX pinout, BC857BSHX application, or BC857BSHX equivalent, this device supports high-temperature dual-transistor functions with verified thermal derating, low collector capacitance (1.8 pF), and no mutual interference between channels-key for precision analog switching and matched-pair biasing.

Technical Context

This dual PNP transistor integrates two electrically isolated, thermally coupled transistors in one ultra-compact SOT363 package. Each channel exhibits tightly matched DC current gain (hFE = 200–450 at −2 mA), low saturation voltage (−200 mV typ. at −100 mA/−5 mA drive), and low collector capacitance (1.8 pF).

It supports operation across −55 °C to +175 °C ambient, with per-device Ptot = 400 mW on FR4 PCB and Rth(j-a) = 375 K/W. The absence of cross-talk enables independent base control-critical for differential pair drivers, dual-level shunt regulators, and redundant signal paths.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −45 V - Maximum safe collector-emitter voltage per transistor under open-base conditions; defines breakdown margin in high-side switch applications.
IC −100 mA - Continuous collector current rating per transistor; supports moderate-power load switching without forced cooling.
hFE 200–450 - DC current gain range at VCE = −5 V, IC = −2 mA; enables predictable base drive sizing for linear or saturated operation.
VCE(sat) −200 mV (typ.) at IC = −100 mA, IB = −5 mA - Low saturation voltage minimizes conduction loss in switching applications.
Cc 1.8 pF - Collector capacitance at VCB = −10 V; reduces high-frequency signal distortion and improves bandwidth in RF-coupled stages.
Tj(max) 175 °C - Maximum junction temperature; allows reliable operation in sealed enclosures or near heat sources without derating penalties.
Rth(j-a) 375 K/W (per device) - Thermal resistance from junction to ambient on standard FR4 PCB; informs heatsinking requirements for sustained 400 mW dissipation.

Pinout & Package

SOT363 (TSSOP6) plastic surface-mount package: 6-pin, 0.65 mm pitch, 2.1 mm × 1.25 mm × 0.95 mm body. Designed for reflow and wave soldering with defined footprint (Fig. 12–13 in datasheet).

Pin/Terminal Circuit Role Design Meaning
1 Emitter of TR1 Current sink node for first transistor; connects to local ground or bias reference in common-emitter configurations.
2 Base of TR1 Control input for TR1; requires current-limited drive to achieve specified hFE and VCE(sat).
3 Collector of TR2 Current source node for second transistor; used as active load or high-side output in complementary topologies.
4 Emitter of TR2 Current sink node for second transistor; electrically isolated from E1 but thermally coupled for matched performance.
5 Base of TR2 Independent control input for TR2; enables dual-channel logic-level switching without shared base resistors.
6 Collector of TR1 Current source node for first transistor; paired with Pin 1 for compact dual-switch implementation.

Key Features

Feature Design Value
Low collector-emitter saturation voltage −200 mV typical at −100 mA ensures <100 mW conduction loss per transistor in saturated switching.
Closely matched current gain hFE spread ≤ 2.25× (200–450) enables stable bias sharing and balanced current splitting in dual-amplifier stages.
No mutual interference Electrically isolated collectors/emitters prevent crosstalk-critical for noise-sensitive analog multiplexers or fault-tolerant drivers.
High-temperature operation Rated to 175 °C junction temperature supports use in automotive engine-control modules and industrial motor drives without derating.
Reduced board space Dual-transistor integration in 2.1 mm × 1.25 mm footprint replaces two discrete SOT23 devices, saving >40% PCB area.

Applications

Industrial Sensor Signal Conditioning Dual-Channel Level Shifting

Use Scenario: Amplifying low-level thermocouple or RTD outputs in programmable logic controllers with rail-to-rail input swing.

IC Role / Device Role / Timing Role: Dual PNP pair configured as matched emitter followers and current mirrors to reject common-mode noise and scale signals.

Use Value: Tight hFE matching (200–450) and low VCE(sat) maintain linearity across −40 °C to +125 °C operating range without calibration drift.

Use Scenario: Translating 3.3 V microcontroller GPIOs to 5 V/12 V logic levels for driving relays and optocouplers in factory automation I/O modules.

IC Role / Device Role / Timing Role: Two independent PNP switches acting as active-low level shifters with fast turn-off (low Cc = 1.8 pF).

Use Value: Independent base control (Pins 2 & 5) eliminates timing skew between channels; 175 °C rating supports operation near motor drivers.

Redundant Power Path Control Compact Dual-Stage Amplifier

Use Scenario: Managing failover between primary and backup 24 V DC power rails in telecom power supplies and medical diagnostic equipment.

IC Role / Device Role / Timing Role: Dual PNP transistors used as OR-ing elements with external sense resistors to detect and isolate faulty inputs.

Use Value: Electrically isolated collectors (Pins 3 & 6) prevent backfeed during fault conditions; low leakage (<5 µA at 150 °C) ensures reliability over 10-year service life.

Use Scenario: Building low-noise preamplifier stages for audio codecs and ultrasonic transducer receivers in portable test equipment.

IC Role / Device Role / Timing Role: First transistor as common-emitter gain stage, second as emitter-follower buffer-both sharing thermal environment for drift cancellation.

Use Value: Matched hFE and low NF (3.3 dB at 1 kHz) preserve SNR; 100 MHz fT supports bandwidth up to 200 kHz with 60 dB gain.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-PNP transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC847BPNH NPN/PNP complementary pair (not PNP/PNP); different polarity pairing limits direct substitution in same-polarity dual-switch designs. Used where mixed-signal level translation or push-pull output is needed-not suitable for dual high-side switch replacement. Select only when circuit topology explicitly requires NPN+PNP pairing and thermal tracking is secondary.
MBT3906DW1T1G Same PNP/PNP configuration but higher VCEO (−40 V vs −45 V), lower hFE min (100 vs 200), and larger SOT363 variant with different thermal resistance (Rth(j-a) = 420 K/W). Acceptable in non-critical industrial controls where gain tolerance and thermal headroom are relaxed. Choose when cost sensitivity outweighs need for tight hFE matching or extended voltage margin.

Compared with BC857BSHX, BC847BPNH offers complementary polarity but cannot replicate matched dual-PNP behavior, while MBT3906DW1T1G trades gain accuracy and voltage rating for broader distributor availability-making BC857BSHX optimal for precision dual-switch or matched-amplifier roles.

Availability

BC857BSHX is available at Aetrix Electronics and suitable for industrial sensor interfaces, dual-channel level shifting, and redundant power path control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BC857BSHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies-delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

BC857BSHX belongs to Nexperia's general-purpose bipolar transistor family, engineered for space-constrained, high-reliability dual-transistor applications demanding thermal stability, gain matching, and low saturation loss.

FAQ

What is the maximum continuous collector current per transistor in BC857BSHX?

The absolute maximum continuous collector current per transistor is −100 mA, as specified in Table 5 (Limiting Values). This rating applies at Tamb ≤ 25 °C on a standard FR4 PCB; derating is required above 25 °C per the 375 K/W thermal resistance curve in Figure 1.

Can BC857BSHX be used in place of two separate BC857B transistors?

Yes-BC857BSHX integrates two BC857B-equivalent PNP transistors in one SOT363 package with identical VCEO, IC, and hFE specifications. Its key advantage is guaranteed thermal coupling and matched characteristics, unlike discrete placements which suffer from layout-induced gain mismatch and thermal gradient errors.

What is the meaning of the marking code '7D%' on BC857BSHX?

The marking code '7D%' appears on the top surface of the SOT363 package, where '7D' identifies the BC857BSHX type and '%' is a placeholder for the manufacturing site code (e.g., 'A' for Nijmegen, 'B' for Bangkok). This matches Table 4 in the official Nexperia datasheet dated 19 March 2021.

Does BC857BSHX support wave soldering?

Yes-Nexperia provides a dedicated wave soldering footprint (Figure 13) for the SOT363 package, specifying solder land dimensions, solder resist openings, and preferred transport direction. Peak temperature must remain within JEDEC J-STD-020 limits, and the device is qualified for both reflow and wave processes per its qualification status in Table 8.

BC857BSHX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
2 PNP (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
45V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Power - Max:
270mW
Frequency - Transition:
100MHz
Operating Temperature:
175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

BC857BSHX FAQ

1.How can I place an order for BC857BSHX through Aetrix?

Please submit a Request for Quotation (RFQ) for BC857BSHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC857BSHX reliable?

The price and inventory of BC857BSHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857BSHX is usually 5 days.

3.What payment methods are accepted for BC857BSHX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC857BSHX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC857BSHX?

BC857BSHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC857BSHX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC857BSHX?

For technical support, including BC857BSHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857BSHX requirements.

6.How does Aetrix verify that BC857BSHX is sourced from the original manufacturer or authorized distributors?

All BC857BSHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857BSHX meets industry standards.

7.What is the process for return or replacement of BC857BSHX?

All BC857BSHX units undergo pre-shipment inspection (PSI). If there is an issue with BC857BSHX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC857BSHX part is unused and in its original packaging.

Return procedure for BC857BSHX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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