Nexperia USA Inc. BC857BS-QF

Overview

BC857BS-QF from Nexperia is a dual PNP general-purpose transistor in SOT363-3 (SC-88) package, featuring matched h_FE (200–450), V_CEO = −45 V, I_C = −100 mA per transistor, and AEC-Q101 qualification for automotive use in space-constrained biasing and switching circuits.

For engineers reviewing the BC857BS-QF datasheet, BC857BS-QF pinout, BC857BS-QF application, or BC857BS-QF equivalent, key selection criteria include per-transistor saturation voltage (V_CEsat ≤ −400 mV at I_C = −100 mA), low collector capacitance (C_c = 2.2 pF), thermal resistance (R_th(j-a) = 416 K/W per device), and dual-transistor isolation.

Technical Context

This dual PNP transistor integrates two electrically isolated, closely matched transistors in one TSSOP6 package, eliminating mutual interference while enabling compact dual-bias or complementary-pair driver designs. Each transistor supports independent operation with identical limiting values: V_CEO = −45 V, I_C = −100 mA, and P_tot = 300 mW per device.

Its AEC-Q101 qualification confirms suitability for automotive ambient conditions (−65 °C to +150 °C), and its low V_BEsat (−755 mV typ. at I_C = −10 mA) and high f_T (100 MHz) support stable DC biasing and moderate-frequency switching up to ~10 MHz.

Key Specifications

Pinout & Package

SOT363-3 (TSSOP6) plastic surface-mounted package, 1.3 mm × 2.2 mm footprint, 0.65 mm pitch, 0.45 mm max height, designed for reflow soldering with standard FR4 PCB layout (Fig. 10).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP transistor applications.

Compared with BC857BS-QF, BC847BS-Q serves complementary NPN roles in the same system, while MBT3906DW1T1G offers lower performance and no automotive qualification-making BC857BS-QF the sole AEC-Q101-certified dual PNP option with matched h_FE and −45 V rating in SOT363-3.

Availability

BC857BS-QF is available at Aetrix Electronics and suitable for automotive door modules, LED instrument cluster drivers, industrial 4–20 mA transmitters, and FPGA power sequencing requiring stable component supply with AEC-Q101 assurance and SMT compatibility.

Supply support for BC857BS-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.

BC857BS-QF belongs to Nexperia's AEC-Q101-qualified general-purpose transistor family, engineered for space-constrained automotive and industrial signal conditioning and switching where dual matched PNP behavior and thermal robustness are critical.

FAQ

Is BC857BS-QF pin-compatible with BC847BS-Q?

Yes-both use identical SOT363-3 (TSSOP6) package and share the same pin assignment: Pin 1=E1/B1, Pin 2=B1/E1, Pin 3=C2/C1, Pin 4=E2/E2, Pin 5=B2/B2, Pin 6=C1/C2. However, BC847BS-Q is NPN, so polarity and biasing direction are reversed; direct substitution will invert circuit function.

What is the maximum continuous collector current per transistor at 85 °C ambient?

At T_amb = 85 °C, derated power dissipation limits I_C to approximately −65 mA per transistor. This is calculated using P_tot = 300 mW per device, R_th(j-a) = 416 K/W, and T_j(max) = 150 °C: ΔT = 65 K → P_max = 65 K / 416 K/W ≈ 156 mW → I_C ≈ √(P_max/R_CE(sat)) ≈ −65 mA assuming V_CEsat ≈ −350 mV.

Does BC857BS-QF support wave soldering?

Yes-Nexperia provides dedicated wave soldering footprint data (Fig. 11) with recommended solder land dimensions (1.3 mm × 1.5 mm per pad), solder resist openings, and preferred transport direction. Thermal profile must respect peak temperature ≤ 260 °C and dwell time ≤ 5 s to avoid package damage or bond wire failure.

How is "closely matched current gain" quantified in production testing?

Nexperia tests h_FE for both transistors at V_CE = −5 V and I_C = −2 mA, and bins devices where |h_FE1 − h_FE2| ≤ 15% of the mean value. This matching is guaranteed per datasheet Section 2 and verified during AEC-Q101 qualification stress testing across temperature and life cycles.