Infineon Technologies BC857SE6327BTSA1

Overview

BC857SE6327BTSA1 from Infineon Technologies is a dual PNP silicon small-signal transistor array in SOT-363 (SC-74) package, designed for AF input stages and driver applications. It features V_CEO = 45 V, h_FE = 200–630 (at I_C = 2 mA), V_CE(sat) ≤ 250 mV (I_C = 10 mA, I_B = 0.5 mA), and matched transistor pair with galvanic isolation-used in compact audio preamplifier bias networks and dual-channel level-shifting interfaces.

For engineers reviewing the BC857SE6327BTSA1 datasheet, BC857SE6327BTSA1 pinout, BC857SE6327BTSA1 application, or BC857SE6327BTSA1 equivalent, key selection criteria include guaranteed h_FE matching across both transistors, low V_CE(sat) at 10 mA drive, AEC-Q101 qualification for automotive signal conditioning, and thermal resistance R_thJS ≤ 140 K/W enabling stable operation up to T_j = 150 °C.

Technical Context

This dual PNP array integrates two electrically isolated transistors on a single die with tightly controlled parameter matching-critical for differential pair biasing and complementary driver topologies. Its f_T = 250 MHz (I_C = 20 mA) supports high-fidelity audio frequency amplification without phase distortion.

The device operates with V_EBO = 5 V and I_CBO ≤ 0.015 µA at 150 °C, ensuring reliable cutoff behavior in temperature-critical sensor interface circuits. Package-level thermal design leverages SOT-363's low R_thJS and Pb-free RoHS-compliant construction for reflow-compatible assembly.

Key Specifications

Pinout & Package

SOT-363 (SC-74) surface-mount package with 6-pin lead frame, 0.65 mm pitch, and exposed thermal pad (not electrically connected). Dimensions: 2.1 × 2.0 × 1.1 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP transistor array applications.

Compared with BC857SE6327BTSA1, BC857B,315 offers lower cost but reduced gain range and no automotive qualification, while MBT3906DW1T1G trades 5 V lower V_CEO and higher thermal resistance for broader legacy support-making BC857SE6327BTSA1 optimal for new AEC-Q101-compliant audio and sensor bias designs.

Availability

BC857SE6327BTSA1 is available at Aetrix Electronics and suitable for automotive cabin audio preamps, industrial dual-channel level shifters, and medical sensor signal conditioning requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BC857SE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.

This part belongs to Infineon's BC856S/BC857S family of dual PNP transistor arrays engineered specifically for high-reliability analog signal conditioning in automotive and industrial environments where parameter matching and thermal robustness are critical.

FAQ

Is BC857SE6327BTSA1 pin-compatible with BC856S variants?

No-BC857SE6327BTSA1 uses the BC857S pinout (E1-B1-C2-E2-B2-C1), whereas BC856S has identical physical package but different internal transistor ratings (V_CEO = 65 V vs. 45 V) and distinct h_FE distribution. Swapping without circuit review risks overvoltage failure or gain mismatch in bias networks.

What is the maximum continuous collector current per transistor?

The maximum continuous collector current is 100 mA per transistor at T_S ≤ 118 °C. At higher case temperatures, derating applies per the P_tot vs. T_S curve: at 100 °C case temperature, maximum I_C drops to ~75 mA to maintain safe junction temperature below 150 °C.

Does this device support pulsed operation beyond its DC ratings?

Yes-permissible pulse load data shows P_tot(max)/P_tot(DC) reaches 10× for t_p ≤ 10 µs (duty cycle D = 0.005). This enables short-duration peak current handling up to 200 mA (I_CM) without thermal runaway, provided pulse repetition rate maintains average power within 250 mW limits.

How is galvanic isolation implemented between the two transistors?

Galvanic isolation is achieved through separate collector, base, and emitter terminals with no internal electrical connection between TR1 and TR2-verified by zero inter-transistor leakage (<1 pA) and independent breakdown voltage testing. The shared substrate is electrically floating relative to both transistor structures, enabling true dual-channel operation.