Infineon Technologies BC857SH6327XTSA1

Overview

BC857SH6327XTSA1 from Infineon Technologies is a dual PNP silicon small-signal transistor array in SOT363 (SC74) package, configured as two galvanically isolated transistors with matched characteristics. It delivers V_CEO = 45 V, h_FE = 200–630 at I_C = 2 mA, V_CE(sat) ≤ 250 mV at I_C = 10 mA/I_B = 0.5 mA, and f_T = 250 MHz - optimized for AF input stages and driver circuits in automotive and industrial signal conditioning.

For engineers reviewing the BC857SH6327XTSA1 datasheet, BC857SH6327XTSA1 pinout, BC857SH6327XTSA1 application, or BC857SH6327XTSA1 equivalent, key selection criteria include dual-transistor matching tolerance, low V_CE(sat) under 10 mA drive, AEC-Q101 qualification, thermal resistance R_thJS ≤ 140 K/W, and RoHS-compliant SOT363 packaging for space-constrained PCB layouts.

Technical Context

This dual PNP transistor array integrates two electrically isolated junctions on a single die with tightly controlled parameter matching - critical for differential amplifiers and complementary driver pairs. Its h_FE range spans 200–630 across I_C = 10 µA to 10 mA, and V_BE(sat) remains ≤ 850 mV at I_C = 100 mA/I_B = 5 mA, enabling efficient current sourcing in low-voltage logic interfaces.

The device operates up to T_j = 150 °C with R_thJS ≤ 140 K/W and supports pulse operation up to I_CM = 200 mA (t_p ≤ 10 ms). Its C_cb = 1.5 pF and C_eb = 8 pF at specified bias points support stable high-frequency gain up to 250 MHz without external compensation.

Key Specifications

Pinout & Package

SOT363 (SC74) surface-mount package: 6-pin, dual-transistor layout with exposed thermal pad (not electrically connected), 1.9 mm × 2.9 mm footprint, 1.1 mm max height, RoHS-compliant matte tin plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP transistor array applications.

Compared with BC857B,215 and MBT3906DW1T1G, BC857SH6327XTSA1 uniquely combines AEC-Q101 qualification, dual-galvanic isolation, 45 V V_CEO, and tight h_FE matching - making it the only option qualified for safety-critical automotive driver stages and medical isolation barriers.

Availability

BC857SH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC analog input modules, and medical patient monitoring equipment requiring stable component supply and long-term lifecycle assurance.

Supply support for BC857SH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability discrete components with global manufacturing and quality certification.

BC857SH6327XTSA1 belongs to Infineon's BC856S/BC857S family of AEC-Q101-qualified dual PNP transistors engineered specifically for automotive signal conditioning, driver stages, and industrial sensor interface circuits demanding matched performance and thermal robustness.

FAQ

What is the maximum continuous collector current per transistor in BC857SH6327XTSA1?

The maximum continuous collector current per transistor is 100 mA at T_A = 25 °C. Derating applies above 25 °C per the P_tot vs. T_S curve: at T_S = 118 °C, the limit drops to ~60 mA to maintain 250 mW total dissipation. Pulse current up to 200 mA is allowed for t_p ≤ 10 ms with duty cycle <2%.

Does BC857SH6327XTSA1 support direct replacement for BC857B in SOT23 packages?

No - BC857SH6327XTSA1 uses SOT363 (6-pin) while BC857B uses SOT23 (3-pin); pin count, pinout, and dual-transistor integration differ fundamentally. Substitution would require PCB redesign and validation of matching performance, thermal path, and layout parasitics.

How is galvanic isolation implemented between the two transistors in this package?

Galvanic isolation is achieved through physical separation of the two PNP die within the same SOT363 package, with independent emitter, base, and collector terminals (E1/B1/C1 and E2/B2/C2) and no internal electrical connection between them. This enables fully independent biasing and signal routing without shared substrate coupling.

What is the typical noise figure and at what conditions is it measured?

The typical noise figure is 10 dB, measured at I_C = 200 µA, V_CE = 5 V, f = 1 kHz, ∆f = 200 Hz, and source resistance R_S = 2 kΩ. This value reflects low-frequency noise performance relevant to precision sensor amplification and audio preamp stages.