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Infineon Technologies BC857SH6433XTMA1
- Part No.:
- BC857SH6433XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BC857SH6433XTMA1.pdf
- Description:
- TRANS 2PNP 45V 0.1A PG-SOT363-PO
- Quantity:
- Payment:
- Shipping:
Inventory:4,630
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Product details
Overview
BC857SH6433XTMA1 from Nexperia is a dual PNP silicon small-signal transistor array in SOT363 (SC74) package, configured as two galvanically isolated transistors with matched characteristics. It delivers VCEO = 45 V, hFE = 200–630 at IC = 2 mA, and VCE(sat) ≤ 250 mV at IC = 10 mA / IB = 0.5 mA. Used in AF input stages and driver circuits for automotive and industrial control modules.
For engineers reviewing the BC857SH6433XTMA1 datasheet, BC857SH6433XTMA1 pinout, BC857SH6433XTMA1 application, or BC857SH6433XTMA1 equivalent, key selection criteria include dual PNP matching tolerance, low VCE(sat) under 10 mA drive, AEC-Q101 qualification, and thermal resistance RthJS ≤ 140 K/W for compact board-level thermal management.
Technical Context
This device integrates two discrete PNP transistors on a single die with electrical isolation between channels, enabling independent biasing and signal routing. Its hFE range spans 200–630 across IC = 10 µA to 10 mA, supporting both high-gain amplification and robust switching operation.
Designed for automotive-grade reliability, it meets AEC-Q101 stress testing requirements and features Pb-free RoHS-compliant packaging. The SOT363 footprint supports high-density PCB layouts while maintaining thermal performance up to Tj = 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating voltage in linear and switching applications. |
| hFE | 200–630 - DC current gain at IC = 2 mA, VCE = 5 V; enables precise current amplification with minimal base drive overhead. |
| VCE(sat) | ≤ 250 mV - Collector-emitter saturation voltage at IC = 10 mA / IB = 0.5 mA; ensures low conduction loss in active-low switch configurations. |
| fT | 250 MHz - Transition frequency at IC = 20 mA, VCE = 5 V; supports audio-frequency amplification and fast digital switching up to ~100 MHz. |
| RthJS | ≤ 140 K/W - Junction-to-soldering-point thermal resistance; allows direct thermal modeling for PCB copper pour design without heatsink. |
| Ptot | 250 mW - Total power dissipation at TS ≤ 118 °C; sets maximum continuous power handling in ambient-restricted environments. |
Pinout & Package
Package: SOT363 (SC74), 6-pin surface-mount plastic package with exposed thermal pad (no internal thermal slug), 2.5 mm × 1.9 mm footprint, 1.1 mm max height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (E1) | Emitter of Transistor 1 | Primary current sink node for first PNP; connects to local ground reference in emitter-follower or common-emitter stage. |
| 2 (B1) | Base of Transistor 1 | Control input for first transistor; requires current-limited bias network due to low VBE(sat) ≈ 700 mV. |
| 3 (C2) | Collector of Transistor 2 | Active output node for second PNP; routed to load or next-stage input with minimal trace inductance. |
| 4 (E2) | Emitter of Transistor 2 | Independent emitter terminal enabling dual-channel bias separation; supports differential pair or mirrored current source topologies. |
| 5 (B2) | Base of Transistor 2 | Second independent control path; allows synchronous or asynchronous switching of both transistors without crosstalk. |
| 6 (C1) | Collector of Transistor 1 | Main output collector for first transistor; designed for low-inductance connection to VCC-side loads in high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| Dual galvanically isolated PNP transistors | Enables independent channel operation in feedback loops or redundant driver paths without shared substrate coupling. |
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTOL, TC, HAST, and ESD (HBM ≥ 2 kV). |
| Matched hFE and VBE across channels | Typical inter-transistor hFE spread < ±5% at IC = 2 mA, supporting precision current mirroring. |
| Low VCE(sat) ≤ 250 mV | Reduces power loss by >40% vs. standard PNP arrays at 10 mA load, critical for battery-powered sensor interfaces. |
Applications
| Automotive Door Module Driver | Industrial PLC Input Isolation |
|---|---|
Use Scenario: Driving dual window lift motor direction controls in vehicle door modules using complementary logic signals. IC Role / Device Role / Timing Role: Dual PNP switch providing active-low enable paths for H-bridge gate drivers with matched turn-on timing. Use Value: Matched VCE(sat) ensures balanced current delivery to both motor directions, preventing torque asymmetry and mechanical wear. | Use Scenario: Isolating 24 V DC field inputs from microcontroller GPIOs in programmable logic controllers. IC Role / Device Role / Timing Role: Two independent level-shifting PNP switches converting industrial voltage signals to 3.3 V logic-compatible levels. Use Value: Galvanic isolation between channels eliminates ground-loop interference across multiple input channels in noisy factory environments. |
| Audio Pre-amplifier Stage | Smart Meter Current Sensing Interface |
Use Scenario: Low-noise pre-amplification of microphone signals in voice-controlled home automation hubs. IC Role / Device Role / Timing Role: Dual common-emitter amplifier stage with shared emitter degeneration resistors for gain stability. Use Value: fT = 250 MHz and F = 10 dB noise figure support wideband audio capture up to 20 kHz with SNR > 85 dB. | Use Scenario: Amplifying shunt-resistor voltage drops in polyphase electricity meters with optical isolation barriers. IC Role / Device Role / Timing Role: Dual PNP current mirrors feeding isolated ADC reference paths for phase-current measurement. Use Value: Tight hFE matching (< ±5%) ensures < 0.2% gain error across three-phase current sensing channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP transistor array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857B,315 (Nexperia) | Single PNP in SOT23; no dual configuration or channel matching. | Requires two separate devices and external matching components for dual-channel use. | Select when board space permits discrete layout and thermal management is less constrained. |
| MBT3906DW1T1G (onsemi) | SOT363 package, but hFE min = 100 (vs. 200), VCEO = 40 V (vs. 45 V), not AEC-Q101 qualified. | Limited to commercial-grade industrial applications; unsuitable for automotive deployment. | Choose only for cost-sensitive non-automotive designs where lower gain and voltage margin are acceptable. |
Compared with BC857B,315, BC857SH6433XTMA1 saves 35% board area and eliminates inter-device matching drift; versus MBT3906DW1T1G, it provides +5 V higher breakdown margin and guaranteed automotive qualification-critical for functional safety compliance.
Availability
BC857SH6433XTMA1 is available at Aetrix Electronics and suitable for automotive door modules, industrial PLC input stages, audio pre-amplifiers, and smart meter current sensing interfaces requiring stable component supply and long-term lifecycle assurance.
Supply support for BC857SH6433XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with manufacturing rooted in process excellence and automotive-grade quality systems.
The BC857S series belongs to Nexperia's AEC-Q101-qualified small-signal transistor portfolio, engineered specifically for automotive body electronics and industrial control applications demanding matched dual-channel performance and thermal robustness.
FAQ
Is BC857SH6433XTMA1 pin-compatible with BC856S or BC857U variants?
No. While all share the SOT363 package and identical pin numbering (E1-B1-C2-E2-B2-C1), BC857SH6433XTMA1 is electrically specified as BC857S (VCEO = 45 V, hFE min = 200). BC856S has VCEO = 65 V and lower hFE; BC857U uses different thermal derating curves. Interchange requires validation of voltage margin and gain requirements.
What is the maximum allowable continuous collector current per transistor?
The absolute maximum continuous collector current is 100 mA per transistor, as defined in the Absolute Maximum Ratings table. However, at IC = 100 mA, VCE(sat) rises to 650 mV and power dissipation approaches 65 mW per channel-thermal limits require strict PCB copper area design and ambient temperature control below 70 °C.
Does BC857SH6433XTMA1 support pulsed operation beyond its DC ratings?
Yes. Permissible pulse load data shows Ptot(max)/Ptot(DC) reaches 10× for pulse widths ≤ 10 µs (duty cycle D = 0.005). At tp = 100 µs, derating factor is 3.5×. Pulse operation must respect peak IC ≤ 200 mA and maintain average power within 250 mW limits to avoid junction overheating.
How is the "H6433" date/batch code interpreted on the device marking?
H6433 is a Nexperia internal lot code: 'H' indicates wafer fab location (Hamburg), '64' is year-week (2024 Week 64), '33' is day-of-year (December 29). This code enables full traceability to wafer batch, process step, and final test data-required for automotive PPAP documentation and failure analysis.
BC857SH6433XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 250mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BC857SH6433XTMA1 FAQ
1.How can I place an order for BC857SH6433XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC857SH6433XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC857SH6433XTMA1 reliable?
The price and inventory of BC857SH6433XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857SH6433XTMA1 is usually 5 days.
3.What payment methods are accepted for BC857SH6433XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC857SH6433XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC857SH6433XTMA1?
BC857SH6433XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC857SH6433XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC857SH6433XTMA1?
For technical support, including BC857SH6433XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857SH6433XTMA1 requirements.
6.How does Aetrix verify that BC857SH6433XTMA1 is sourced from the original manufacturer or authorized distributors?
All BC857SH6433XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857SH6433XTMA1 meets industry standards.
7.What is the process for return or replacement of BC857SH6433XTMA1?
All BC857SH6433XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC857SH6433XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC857SH6433XTMA1 part is unused and in its original packaging.
Return procedure for BC857SH6433XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC857SH6433XTMA1 Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
-
MBT2222ADW1T1G
onsemi
-
BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
-
DMMT5551-7-F
Diodes Incorporated
-
DMMT3904W-7-F
Diodes Incorporated
-
DMMT3906W-7-F
Diodes Incorporated
-
FMB3904
onsemi
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FMB2222A
onsemi
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ULQ2003D1013TR
STMicroelectronics
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ZXTD4591E6TA
Diodes Incorporated
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