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Infineon Technologies BC857SH6794XTSA1
- Part No.:
- BC857SH6794XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BC857SH6794XTSA1.pdf
- Description:
- TRANS 2PNP 45V 0.1A PG-SOT363-PO
- Quantity:
- Payment:
- Shipping:
Inventory:2,397
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Product details
Overview
BC857SH6794XTSA1 from Nexperia is a dual PNP silicon small-signal transistor array in SOT363 (SC74) package, rated for VCEO = 45 V, IC = 100 mA, and hFE = 200–630 at IC = 2 mA. It features low VCE(sat) (max 300 mV at IC = 10 mA), matched gain between channels, and AEC-Q101 qualification for automotive driver stages.
For engineers reviewing the BC857SH6794XTSA1 datasheet, BC857SH6794XTSA1 pinout, BC857SH6794XTSA1 application, or BC857SH6794XTSA1 equivalent, key selection criteria include dual-channel PNP matching tolerance, thermal resistance (RthJS ≤ 140 K/W), junction temperature rating (Tj = 150 °C), and RoHS-compliant lead-free packaging.
Technical Context
This device integrates two galvanically isolated PNP transistors with tightly matched DC current gain (hFE) and saturation characteristics on a single die. Its design supports cascaded AF amplification and complementary driver configurations where channel-to-channel tracking reduces offset and improves linearity.
The SOT363 package enables compact dual-transistor implementation with shared thermal path and defined pinout (E1-B1-C2-E2-B2-C1). Electrical behavior is characterized across –65 °C to +150 °C, with validated performance up to TS = 118 °C for continuous operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating voltage headroom in linear amplifier stages. |
| IC | 100 mA - Continuous collector current rating; sets maximum load drive capability per channel without derating. |
| hFE | 200–630 - DC current gain range at IC = 2 mA, VCE = 5 V; enables predictable biasing and gain stability in discrete amplifier designs. |
| VCE(sat) | 300 mV max at IC = 10 mA, IB = 0.5 mA - Low saturation voltage ensures minimal power loss and heat generation in switching applications. |
| fT | 250 MHz - Transition frequency at IC = 20 mA, VCE = 5 V; supports audio-frequency amplification with margin into low RF bands. |
| RthJS | ≤140 K/W - Junction-to-soldering-point thermal resistance; determines required PCB copper area and heatsinking for thermal management. |
| Tj | 150 °C - Maximum allowable junction temperature; defines upper limit for ambient + self-heating in sealed enclosures. |
Pinout & Package
SOT363 (SC74) surface-mount package with 6-pin configuration, 0.65 mm pitch, and exposed thermal pad (not electrically connected). Dimensions: 2.1 mm × 2.0 mm × 0.95 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (E1) | Emitter of Transistor 1 | Primary current sink node for first PNP; tied to local ground reference in common-emitter amplifier stage. |
| 2 (B1) | Base of Transistor 1 | Control input for first transistor; requires current-limited bias network to set operating point. |
| 3 (C2) | Collector of Transistor 2 | Active output node for second PNP; connects to load or next stage's input in push-pull or differential pair. |
| 4 (E2) | Emitter of Transistor 2 | Second emitter node; may be tied to E1 for parallel operation or kept independent for isolated functions. |
| 5 (B2) | Base of Transistor 2 | Independent control terminal enabling dual-gain-stage or complementary driver topologies. |
| 6 (C1) | Collector of Transistor 1 | Main output node for first transistor; routed to feedback network or load in AF preamp circuits. |
Key Features
| Feature | Design Value |
|---|---|
| Dual galvanically isolated PNP transistors | Enables independent biasing and signal routing for differential amplifiers or dual-stage drivers without cross-talk. |
| AEC-Q101 qualified | Validated for automotive under-hood applications including engine control modules and body electronics. |
| Matched hFE and VBE(sat) | Reduces gain mismatch to <±5% typical between channels, critical for balanced output stages and current mirrors. |
| Pb-free, RoHS-compliant | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (peak 260 °C). |
Applications
| Automotive Door Module Driver | USB-C Power Delivery Gate Control |
|---|---|
Use Scenario: Driving window lift motor H-bridge enable logic in vehicle door control units. IC Role / Device Role / Timing Role: Dual PNP switch providing level-shifted, current-amplified gate drive for N-channel MOSFETs in half-bridge configuration. Use Value: Low VCE(sat) minimizes conduction loss during active gate pull-down; matched hFE ensures symmetrical turn-on timing across both legs. | Use Scenario: Controlling USB-C CC line termination resistors during port role negotiation. IC Role / Device Role / Timing Role: Discrete PNP pair acting as bidirectional analog switches for resistor selection in Type-C configuration channel circuitry. Use Value: Galvanic isolation prevents leakage paths between CC1/CC2 lines; 45 V VCEO accommodates ±20 V fault transients per USB PD spec. |
| Industrial Sensor Signal Conditioning | Medical Infusion Pump Motor Interface |
Use Scenario: Amplifying low-level thermistor or bridge sensor outputs in programmable logic controller (PLC) analog input modules. IC Role / Device Role / Timing Role: Dual-stage PNP common-emitter amplifier with emitter degeneration for stable gain and wide dynamic range. Use Value: 250 MHz fT supports bandwidth up to 20 kHz with >60 dB gain; hFE spread ≤3:1 ensures consistent calibration across production batches. | Use Scenario: Isolating microcontroller GPIO signals from stepper motor driver enable inputs in Class II medical devices. IC Role / Device Role / Timing Role: Level-shifting and current buffering interface between 3.3 V MCU and 5 V motor driver ICs. Use Value: AEC-Q101 qualification provides proven reliability for safety-critical life-support equipment; RthJS ≤140 K/W allows operation in sealed plastic housings without forced air. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP transistor array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857B,115 (Nexperia) | Single PNP transistor in SOT23; no dual-channel integration or inter-device matching. | Requires two separate placements and external matching components for dual-stage use. | Select when board space permits discrete layout and tighter individual parameter control is needed. |
| MBT3906DW1T1G (onsemi) | Same SOT363 package but higher VCEO = 40 V (vs. 45 V), lower hFE min = 100, and non-AEC-Q101 rated. | Limited to industrial/commercial environments; not approved for automotive under-hood deployment. | Choose for cost-sensitive non-automotive applications where full AEC-Q101 compliance is not required. |
Compared with BC857B,115, BC857SH6794XTSA1 saves PCB area and improves channel matching; versus MBT3906DW1T1G, it delivers higher voltage margin and certified automotive reliability-critical for safety-critical driver stages.
Availability
BC857SH6794XTSA1 is available at Aetrix Electronics and suitable for automotive door modules, USB-C power delivery interfaces, industrial PLC analog input stages, and medical infusion pump motor controls requiring stable component supply and long-term lifecycle support.
Supply support for BC857SH6794XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with manufacturing rooted in process excellence and automotive-grade quality systems.
BC857SH6794XTSA1 belongs to Nexperia's AEC-Q101-qualified small-signal transistor family, engineered specifically for robust, space-constrained driver and amplification roles in automotive and industrial control systems.
FAQ
What is the pin 1 marking convention for BC857SH6794XTSA1 in tape-and-reel packaging?
Pin 1 is marked by a molded dot or notch on the package body adjacent to lead 1 (E1). Per SC74 specification, orientation in reel is not defined for symmetric types-board layout must verify pin 1 location using optical inspection or X-ray prior to assembly.
Does BC857SH6794XTSA1 support parallel connection of both transistors for higher current handling?
Yes-both transistors share identical electrical specs and thermal coupling in the same die. When paralleled (E1+E2, B1+B2, C1+C2), total IC capability reaches 200 mA with matched VCE(sat), provided external base resistors are individually trimmed to balance current sharing.
How does the thermal resistance RthJS = 140 K/W translate to practical PCB layout requirements?
At 100 mA IC and 300 mV VCE(sat), power dissipation is ~30 mW per channel. With RthJS = 140 K/W, junction rise is ~4.2 °C above solder point. A minimum 10 mm² copper pour under the thermal pad (with ≥4 vias to inner ground plane) maintains safe margins up to 85 °C ambient.
Is BC857SH6794XTSA1 suitable for linear regulator pass transistor applications?
No-its VCEO = 45 V and Ptot = 250 mW limit safe operation to low-dropout, low-current regulators (<50 mA load). For dedicated LDO pass elements, discrete transistors with higher VCEO, Ptot, and SOA ratings (e.g., ZTX951) are recommended.
BC857SH6794XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 250mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BC857SH6794XTSA1 FAQ
1.How can I place an order for BC857SH6794XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC857SH6794XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC857SH6794XTSA1 reliable?
The price and inventory of BC857SH6794XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857SH6794XTSA1 is usually 5 days.
3.What payment methods are accepted for BC857SH6794XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC857SH6794XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC857SH6794XTSA1?
BC857SH6794XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC857SH6794XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC857SH6794XTSA1?
For technical support, including BC857SH6794XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857SH6794XTSA1 requirements.
6.How does Aetrix verify that BC857SH6794XTSA1 is sourced from the original manufacturer or authorized distributors?
All BC857SH6794XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857SH6794XTSA1 meets industry standards.
7.What is the process for return or replacement of BC857SH6794XTSA1?
All BC857SH6794XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC857SH6794XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC857SH6794XTSA1 part is unused and in its original packaging.
Return procedure for BC857SH6794XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC857SH6794XTSA1 Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
-
MBT2222ADW1T1G
onsemi
-
BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
-
DMMT5551-7-F
Diodes Incorporated
-
DMMT3904W-7-F
Diodes Incorporated
-
DMMT3906W-7-F
Diodes Incorporated
-
FMB3904
onsemi
-
FMB2222A
onsemi
-
ULQ2003D1013TR
STMicroelectronics
-
ZXTD4591E6TA
Diodes Incorporated
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