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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Nexperia USA Inc. BCM846BSHF

Name: BCM846BSHF
Brand: Nexperia USA Inc.
SKU: BCM846BSHF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCM846BSHF

Manufacturer:: Nexperia USA Inc.

Category:: Bipolar Transistor Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: BCM846BSHF.pdf

Description:: TRANS 2NPN 65V 100MA 6-TSSOP

Quantity:: RFQ Add To RFQ list

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Inventory:9,171

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Product details

Overview

BCM846BSHF from Nexperia is a matched dual NPN transistor in SOT363 (TSSOP6) package, designed for precision analog functions requiring tight h_FE and V_BE matching between two transistors. It delivers 65 V V_CEO, 100 mA I_C, h_FE matching ratio of 0.95–1.05, V_BE matching ≤2 mV, and operates up to 175 °C - enabling use in high-reliability current mirrors and differential amplifiers in industrial sensor front-ends.

For engineers reviewing the BCM846BSHF datasheet, BCM846BSHF pinout, BCM846BSHF application, or BCM846BSHF equivalent, this device is selected for its verified current gain and base-emitter voltage tracking across temperature, low collector capacitance (1.2 pF), and absence of mutual interference between channels - critical for matched-pair biasing and precision DC signal conditioning.

Technical Context

This dual NPN transistor integrates two electrically isolated silicon junction transistors on a single die within a thermally symmetric SOT363 footprint, ensuring consistent thermal coupling and minimizing tracking drift. Its design supports simultaneous operation with independent base drive and collector loads, preserving channel independence while enabling precise ratio-based analog functions.

The device meets IEC 60134 absolute maximum ratings, including 65 V V_CEO, 200 mA I_CM, and 175 °C T_j, with thermal resistance R_th(j-a) = 375 K/W per device on FR4 PCB - confirming suitability for compact, high-density analog circuits where thermal stability and matching integrity are non-negotiable.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	65 V - Maximum collector-emitter voltage before breakdown; enables use in 48 V industrial bus monitoring and higher-voltage analog stages.
I_C	100 mA - Continuous collector current per transistor; supports medium-current mirror loads and active load applications.
h_FE Matching	0.95–1.05 - Ratio of DC current gains between TR1 and TR2; ensures <±5% gain error in current mirror topologies.
V_BE Matching	≤2 mV - Base-emitter voltage difference at 2 mA/5 V; guarantees sub-0.3% relative offset in differential pair biasing.
C_c	1.2 pF - Collector capacitance at 10 V; minimizes high-frequency phase shift in broadband amplifier feedback networks.
T_j Max	175 °C - Maximum junction temperature; validates operation in under-hood automotive modules and industrial motor control enclosures.
P_tot (per device)	400 mW - Total power dissipation limit on FR4 PCB; defines thermal headroom for dual-transistor operation without forced cooling.

Pinout & Package

SOT363 (TSSOP6) plastic surface-mount package: 6-pin, 0.65 mm pitch, 2.1 mm × 1.25 mm × 0.95 mm body, optimized for automated reflow assembly and high-density PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1	E1	Emitter of Transistor 1 - Primary current sink node for first matched transistor; referenced to local ground or bias network.
2	B1	Base of Transistor 1 - Control input for TR1; requires current-limited drive to maintain h_FE-based linearity.
3	C2	Collector of Transistor 2 - High-side output node for second transistor; connects to supply rail or active load.
4	E2	Emitter of Transistor 2 - Independent emitter node for TR2; enables separate emitter degeneration or current sensing.
5	B2	Base of Transistor 2 - Second control input; driven identically or differentially relative to B1 for matched operation.
6	C1	Collector of Transistor 1 - Primary output node for TR1; used as current source/sink in mirror configurations.

Key Features

Feature	Design Value
Current gain matching	h_FE1/h_FE2 = 0.95–1.05 - Enables <±5% current ratio accuracy in mirror circuits without trimming.
Base-emitter voltage matching	V_BE1−V_BE2 ≤2 mV - Ensures <0.3% relative offset in differential amplifier tail currents at 25 °C.
No mutual interference	Electrically isolated transistor dies - Prevents crosstalk in mixed-signal IC bias networks and eliminates shared substrate noise paths.
High-temperature operation	Rated to 175 °C junction temperature - Supports deployment in engine control units and industrial inverters without derating penalties.
Low collector capacitance	C_c = 1.2 pF - Reduces Miller effect in high-speed current sources, preserving bandwidth in >100 MHz amplifier stages.

Applications

Current Mirror

Differential Amplifier

Use Scenario: Precision current replication in sensor signal conditioning circuits, such as bridge amplifier biasing or DAC output buffering.

IC Role / Device Role / Timing Role: Dual-transistor current mirror reference cell providing matched I_OUT = I_IN × (h_FE2/h_FE1) with minimal ratio error.

Use Value: Achieves <±5% current transfer accuracy over −40 °C to +125 °C due to monolithic matching and thermal coupling.

Use Scenario: Input stage of rail-to-rail operational amplifiers and instrumentation amplifiers in medical ECG front-ends.

IC Role / Device Role / Timing Role: Matched NPN pair forming the core differential pair with common-emitter degeneration for linear gain control.

Use Value: Delivers <0.3 mV input offset drift over temperature by leveraging ≤2 mV V_BE mismatch and identical thermal gradients.

Active Load Circuit

Temperature-Stable Bias Generator

Use Scenario: High-impedance active load in discrete op-amp output stages for industrial PLC analog outputs.

IC Role / Device Role / Timing Role: TR1 configured as constant-current sink, TR2 as cascoded current source to extend output swing.

Use Value: Maintains >10 MΩ small-signal impedance up to 100 kHz due to low C_c and high Early voltage matching.

Use Scenario: Reference current generator for bandgap circuits in smart power modules operating near engine compartments.

IC Role / Device Role / Timing Role: Dual-transistor PTAT (proportional-to-absolute-temperature) current source using matched V_BE and ΔV_BE scaling.

Use Value: Enables ±1.5% reference current stability from −40 °C to +150 °C without external trimming components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar matched dual NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCM847BSHF	Higher V_CEO (80 V), same SOT363 package and matching specs (h_FE ratio 0.95–1.05, V_BE diff ≤2 mV).	Supports 60 V bus monitoring; otherwise functionally identical in mirror and differential roles.	Select when system voltage exceeds 65 V but thermal and layout constraints remain unchanged.
MBT3904DW1T1G	Lower V_CEO (40 V), looser h_FE matching (±15%), no specified V_BE matching; SOT-363 package.	Suitable only for non-critical biasing; not recommended for precision current mirrors or high-temp differential pairs.	Accept only for cost-sensitive, non-precision applications where matching tolerance >±10% is acceptable.

Compared with BCM846BSHF, BCM847BSHF extends voltage capability without sacrificing matching or thermal performance, while MBT3904DW1T1G trades precision for cost - making BCM846BSHF the optimal choice for applications demanding verified <±5% h_FE and ≤2 mV V_BE tracking across temperature.

Availability

BCM846BSHF is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive cabin electronics, and high-reliability power supply monitoring requiring stable component supply and guaranteed long-term availability.

Supply support for BCM846BSHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, with leadership in automotive-qualified and industrial-grade components.

The BCM846BSHF belongs to Nexperia's matched bipolar transistor product line, engineered specifically for analog signal path integrity in precision current mirrors, differential amplifiers, and temperature-stable bias generators.

FAQ

What is the maximum continuous collector current per transistor in BCM846BSHF?

The BCM846BSHF supports 100 mA continuous collector current per transistor under ambient conditions ≤25 °C with proper PCB thermal relief. At 100 °C ambient, derating reduces usable current to approximately 65 mA based on the 375 K/W per-device thermal resistance and 400 mW total power limit.

Can BCM846BSHF be used as a drop-in replacement for standard dual transistors like BC846B?

Yes - BCM846BSHF uses the same SOT363 footprint and pinout as BC846B series devices, and its "drop-in replacement" feature is validated by Nexperia for identical board layouts. However, its tighter h_FE and V_BE matching adds value only when those parameters are actively leveraged in circuit design.

Does BCM846BSHF require special PCB layout considerations for matching performance?

Yes - to preserve matching, place the device away from localized heat sources, avoid asymmetric copper pours, and route B1/B2 and E1/E2 traces with equal length and symmetry. Thermal coupling between transistors relies on monolithic die placement, so board-level thermal gradients must be minimized to prevent V_BE and h_FE drift divergence.

Is BCM846BSHF qualified for automotive applications?

No - BCM846BSHF is not AEC-Q101 qualified and lacks automotive-specific testing or qualification documentation. While it operates up to 175 °C junction temperature, Nexperia explicitly states non-automotive qualification unless expressly noted in the data sheet, and automotive use requires formal validation by the end customer.

BCM846BSHF Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: 2 NPN (Dual)

Current - Collector (Ic) (Max):: 100mA

Voltage - Collector Emitter Breakdown (Max):: 65V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 5V

Power - Max:: 200mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSSOP

BCM846BSHF FAQ

1.How can I place an order for BCM846BSHF through Aetrix?

Please submit a Request for Quotation (RFQ) for BCM846BSHF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCM846BSHF reliable?

The price and inventory of BCM846BSHF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM846BSHF is usually 5 days.

3.What payment methods are accepted for BCM846BSHF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM846BSHF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCM846BSHF?

BCM846BSHF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCM846BSHF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCM846BSHF?

For technical support, including BCM846BSHF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM846BSHF requirements.

6.How does Aetrix verify that BCM846BSHF is sourced from the original manufacturer or authorized distributors?

All BCM846BSHF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM846BSHF meets industry standards.

7.What is the process for return or replacement of BCM846BSHF?

All BCM846BSHF units undergo pre-shipment inspection (PSI). If there is an issue with BCM846BSHF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCM846BSHF part is unused and in its original packaging.

Return procedure for BCM846BSHF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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