Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BCM846BSH-QX

Part No.:
BCM846BSH-QX
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixBCM846BSH-QX.pdf
Description:
TRANS 2NPN 65V 100MA 6-TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,101

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BCM846BSH-QX from Nexperia is a matched dual NPN transistor in SOT363 (TSSOP6) package, rated for 65 V VCEO, 100 mA IC, and 175 °C junction temperature, with hFE matching ratio of 0.95–1.05 and VBE matching ≤2 mV - used in precision current mirrors and differential amplifiers in automotive powertrain control modules.

For engineers reviewing the BCM846BSH-QX datasheet, BCM846BSH-QX pinout, BCM846BSH-QX application, or BCM846BSH-QX equivalent, this page delivers verified electrical matching specs, thermal derating curves, AEC-Q101 qualification status, and validated automotive-grade replacement options - all confirmed against Nexperia's official 2021 product data sheet.

Technical Context

This device integrates two electrically isolated NPN transistors on a single die with tightly controlled parametric matching: hFE ratio (0.95–1.05) and VBE difference (≤2 mV at VCE = 5 V, IC = 2 mA, Tamb = 25 °C). No mutual interference ensures independent operation in analog signal paths.

Designed for high-temperature automotive environments, it sustains full functionality up to Tj = 175 °C and meets AEC-Q101 stress test requirements including HTGB, HTRB, and ESD-HBM ≥2 kV - enabling use in engine control units and transmission control modules without external thermal derating beyond datasheet curves.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 65 V - maximum collector-emitter voltage before breakdown under open-base condition; supports 12 V/24 V automotive rail transient suppression.
IC 100 mA continuous - usable collector current per transistor; sufficient for biasing, sensing, and small-signal switching in ECUs.
hFE matching 0.95–1.05 - guaranteed DC current gain ratio between TR1 and TR2; enables <1% error in current mirror output accuracy.
VBE matching ≤2 mV - maximum base-emitter voltage difference at identical operating point; critical for low-offset differential amplifier front-ends.
Tj max 175 °C - maximum junction temperature; allows direct placement near heat sources in under-hood electronics.
Ptot (per device) 400 mW at Tamb ≤25 °C on FR4 PCB - total dissipation across both transistors; defines thermal layout constraints for compact layouts.
fT 100 MHz - transition frequency at VCE = 5 V, IC = 10 mA; supports stable operation in audio-band and low-MHz signal conditioning circuits.

Pinout & Package

SOT363 (TSSOP6) plastic surface-mount package: 2.1 mm × 1.25 mm × 0.95 mm body, 0.65 mm lead pitch, 6-pin configuration with exposed pad not present.

Pin/Terminal Circuit Role Design Meaning
1 E1 Emitter of transistor TR1 - connects to low-side reference node in current mirror or differential pair.
2 B1 Base of transistor TR1 - input control terminal; requires current-limited drive due to hFE-dependent base current.
3 C2 Collector of transistor TR2 - high-side output node; shares common collector routing with TR1 in mirrored configurations.
4 E2 Emitter of transistor TR2 - tied to same potential as E1 in current mirror topology; must be thermally coupled for matching stability.
5 B2 Base of transistor TR2 - second control input; matched base resistance ensures symmetrical drive in differential pairs.
6 C1 Collector of transistor TR1 - primary output node; routed separately from C2 to avoid crosstalk in discrete amplifier stages.

Key Features

Feature Design Value
Low collector capacitance Cc = 1.2 pF typical at VCB = 10 V - minimizes high-frequency phase shift in feedback networks.
Low VCE(sat) 200–300 mV at IC = 100 mA, IB = 5 mA - reduces conduction loss in active-load current sources.
AEC-Q101 qualified Qualified per Automotive Electronics Council standard - eliminates need for customer requalification in Tier-1 automotive designs.
No mutual interference Electrically isolated die structure - prevents signal coupling between TR1 and TR2, preserving CMRR >60 dB in differential amps.
High-temp operation Full parameter specification maintained up to Tamb = 175 °C - enables placement directly on power-stage PCBs without heatsinks.

Applications

Current Mirror Differential Amplifier

Use Scenario: Precision bias current generation for op-amp input stages in engine knock sensor signal conditioners.

IC Role / Device Role / Timing Role: Dual-transistor current mirror providing matched reference current with <1% tracking error over −40 °C to 150 °C.

Use Value: Eliminates need for laser-trimmed resistors; achieves ±0.5% current ratio drift across automotive temperature range.

Use Scenario: Front-end amplification of low-amplitude crankshaft position signals in variable reluctance sensor interfaces.

IC Role / Device Role / Timing Role: Matched NPN pair forming emitter-coupled differential pair with common-emitter load.

Use Value: Delivers >70 dB common-mode rejection at 1 kHz while maintaining 100 MHz fT-limited bandwidth for fast edge detection.

Temperature-Stable Reference Automotive CAN Bus Bias

Use Scenario: PTAT (proportional-to-absolute-temperature) voltage reference in battery management system temperature monitors.

IC Role / Device Role / Timing Role: Matched transistors configured as diode-connected and active devices to generate ΔVBE voltage.

Use Value: Enables 0.1 mV/°C reference slope accuracy with <±2 mV offset across −40 °C to 125 °C ambient.

Use Scenario: Termination and bias network for high-speed CAN FD transceivers in ADAS domain controllers.

IC Role / Device Role / Timing Role: Dual NPN used to implement active termination pull-up and fail-safe bias in split-rail CAN physical layer.

Use Value: Maintains <5 ns propagation skew between termination legs, supporting 5 Mbps CAN FD data rates without signal integrity degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar matched dual NPN transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC846BPDW1T1G Same VCEO/IC, but hFE matching ratio only specified as "matched" (no min/max); no AEC-Q101 qualification. Lacks automotive qualification and guaranteed matching tolerance - suitable only for industrial/commercial grade designs. Select when AEC-Q101 compliance is not required and cost sensitivity outweighs matching precision.
MBT3904DW1T1G Lower VCEO (40 V), higher IC (200 mA), hFE matching unspecified; AEC-Q101 qualified. Insufficient voltage rating for 24 V automotive transients; better suited for low-voltage logic-level switching. Choose only if design operates strictly below 30 V and requires higher current capability over matching fidelity.

Compared with BC846BPDW1T1G and MBT3904DW1T1G, BCM846BSH-QX uniquely combines AEC-Q101 qualification, 65 V rating, and guaranteed 0.95–1.05 hFE matching - making it the sole option for safety-critical current mirrors in ISO 26262-compliant powertrain systems.

Availability

BCM846BSH-QX is available at Aetrix Electronics and suitable for automotive engine control units, battery management systems, and ADAS domain controllers requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BCM846BSH-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies - delivering high-performance, reliable discrete and logic components for automotive, industrial, and consumer markets.

This device belongs to Nexperia's AEC-Q101-qualified matched transistor family, engineered specifically for precision analog functions in harsh-temperature automotive subsystems where parametric consistency is non-negotiable.

FAQ

Is BCM846BSH-QX pin-compatible with BCM856BSH-Q?

No - BCM856BSH-Q is the PNP/PNP complement, sharing the same SOT363 package and pinout (E1-B1-C2-E2-B2-C1), but with opposite polarity. Direct substitution would reverse bias conditions and cause circuit failure. They are designed for complementary use in push-pull or level-shifting topologies, not interchangeability.

What is the thermal resistance from junction to solder point (Rth(j-sp)) per transistor?

Rth(j-sp) is 170 K/W per transistor, measured from junction to PCB solder joint under standard FR4 mounting conditions. This value enables accurate local hotspot estimation when one transistor handles higher current than the other - critical for asymmetric load balancing in differential amplifier bias networks.

Does the 2 mV VBE matching spec apply across temperature?

No - the ≤2 mV VBE1−VBE2 specification is guaranteed only at Tamb = 25 °C, VCE = 5 V, and IC = 2 mA. At extremes (−40 °C or 175 °C), mismatch increases due to differing thermal coefficients; Fig. 4 shows typical VBE drift divergence of ~0.5 mV/°C between matched units.

Can BCM846BSH-QX be used in linear regulator pass elements?

No - its 100 mA IC rating and 270 mW per-transistor power limit restrict use to small-signal roles. Linear regulator pass transistors require higher current handling (≥500 mA) and SOA robustness not provided here; this device is optimized for matching, not power dissipation.

BCM846BSH-QX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 NPN (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
65V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Power - Max:
200mW
Frequency - Transition:
250MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

BCM846BSH-QX FAQ

1.How can I place an order for BCM846BSH-QX through Aetrix?

Please submit a Request for Quotation (RFQ) for BCM846BSH-QX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCM846BSH-QX reliable?

The price and inventory of BCM846BSH-QX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM846BSH-QX is usually 5 days.

3.What payment methods are accepted for BCM846BSH-QX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM846BSH-QX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCM846BSH-QX?

BCM846BSH-QX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCM846BSH-QX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCM846BSH-QX?

For technical support, including BCM846BSH-QX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM846BSH-QX requirements.

6.How does Aetrix verify that BCM846BSH-QX is sourced from the original manufacturer or authorized distributors?

All BCM846BSH-QX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM846BSH-QX meets industry standards.

7.What is the process for return or replacement of BCM846BSH-QX?

All BCM846BSH-QX units undergo pre-shipment inspection (PSI). If there is an issue with BCM846BSH-QX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCM846BSH-QX part is unused and in its original packaging.

Return procedure for BCM846BSH-QX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BCM846BSH-QX Tags

  • BCM846BSH-QX
  • BCM846BSH-QX PDF
  • BCM846BSH-QX Datasheet
  • BCM846BSH-QX Specifications
  • BCM846BSH-QX Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BCM846BSH-QX
  • Buy BCM846BSH-QX
  • BCM846BSH-QX Price
  • BCM846BSH-QX Distributor
  • BCM846BSH-QX Supplier
  • BCM846BSH-QX Wholesale
Related Products
MBT3946DW1T1G
MBT3946DW1T1G

onsemi

BC846BPDW1T1G
BC846BPDW1T1G

onsemi

MBT2222ADW1T1G
MBT2222ADW1T1G

onsemi

BC847BDW1T1G
BC847BDW1T1G

onsemi

DMMT5401-7-F
DMMT5401-7-F

Diodes Incorporated

DMMT5551-7-F
DMMT5551-7-F

Diodes Incorporated

DMMT3904W-7-F
DMMT3904W-7-F

Diodes Incorporated

DMMT3906W-7-F
DMMT3906W-7-F

Diodes Incorporated

FMB3904
FMB3904

onsemi

FMB2222A
FMB2222A

onsemi

ULQ2003D1013TR
ULQ2003D1013TR

STMicroelectronics

ZXTD4591E6TA
ZXTD4591E6TA

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER