My Inquiry
My Account
Nexperia USA Inc. BCM846BSX
- Part No.:
- BCM846BSX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BCM846BSX.pdf
- Description:
- TRANS 2NPN 65V 100MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:20,195
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BCM846BSX from Nexperia is an AEC-Q101-qualified NPN/NPN matched double transistor in SOT363-3 (SC-88) package, featuring hFE matching ratio ≥0.9, VBE mismatch ≤2 mV, and 65 V VCEO per transistor - designed for precision current mirroring and differential amplification in automotive sensor signal conditioning circuits.
For engineers reviewing the BCM846BSX datasheet, BCM846BSX pinout, BCM846BSX application, or BCM846BSX equivalent, key selection criteria include transistor matching tolerance, thermal resistance (416 K/W device-level), junction temperature rating (150 °C), and qualification for automotive-grade reliability under AEC-Q101 stress testing.
Technical Context
This dual NPN transistor integrates two fully isolated silicon epitaxial planar transistors on a single die with matched DC parameters. It operates with VCE = 5 V, IC = 2 mA at 25 °C for matching characterization, and supports pulsed IC up to 200 mA with 300 mW total device power dissipation on FR4 PCB.
The device delivers fT ≥100 MHz at IC = 10 mA and exhibits low noise figure (≤3.3 dB at 1 kHz), enabling use in high-fidelity analog front-ends where gain stability and signal integrity are critical across temperature ranges from −55 °C to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 65 V per transistor - defines maximum safe collector-emitter voltage under open-base condition for robust operation in 12 V/24 V automotive supply rails. |
| IC | 100 mA continuous per transistor - supports medium-current biasing in active filter stages and precision reference circuits. |
| hFE matching | ≥0.9 (hFE1/hFE2) - ensures <10% current gain deviation between transistors, critical for accurate current mirror ratio stability. |
| VBE mismatch | ≤2 mV at IC = 2 mA - enables sub-millivolt input offset control in differential pair configurations. |
| Ptot | 300 mW per device - specifies maximum allowable power dissipation for thermal design on standard FR4 PCB with single-sided copper. |
| fT | 100–250 MHz - determines usable bandwidth for small-signal amplification up to mid-VHF range in sensor interface stages. |
| Rth(j-a) | 416 K/W per device - quantifies thermal resistance from junction to ambient, guiding heatsinking requirements in enclosed automotive modules. |
Pinout & Package
SOT363-3 (TSSOP6) plastic surface-mounted package with 0.65 mm lead pitch, 2.2 mm × 1.35 mm body size, and transparent top view marking. Designed for reflow soldering with defined footprint per Figure 10.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter TR1 | Primary emitter connection for first transistor; referenced to base 2 and collector 6 in standard current mirror layout. |
| 2 | Base TR1 | Control terminal for TR1; used for bias current injection or feedback node in differential pair configurations. |
| 3 | Collector TR2 | Output node of second transistor; paired with emitter 4 to form matched current sink leg in mirror topology. |
| 4 | Emitter TR2 | Emitter of second transistor; tied to common reference (e.g., ground or current source) in balanced amplifier designs. |
| 5 | Base TR2 | Independent base control for TR2; enables separate bias adjustment or cross-coupling in active load applications. |
| 6 | Collector TR1 | Main output collector of TR1; typically connected to load resistor or next-stage input in high-gain preamplifier cells. |
Key Features
| Feature | Design Value |
|---|---|
| Current gain matching | hFE1/hFE2 ≥ 0.9 - reduces gain error in cascaded mirror networks without external trimming components. |
| Base-emitter voltage matching | VBE1 − VBE2 ≤ 2 mV - minimizes input offset in differential amplifiers operating at microamp bias currents. |
| AEC-Q101 qualification | Qualified per Stress Test Qualification for Discrete Semiconductors - certifies suitability for under-hood automotive environments including temperature cycling and humidity exposure. |
| Thermal performance | Rth(j-a) = 416 K/W (device level) - enables stable operation up to 150 °C junction temperature with minimal derating on standard PCB layouts. |
| Low-noise operation | NF ≤ 3.3 dB at 1 kHz - preserves signal-to-noise ratio in microphone preamps and thermocouple amplifiers requiring <10 µV RMS noise floor. |
Applications
| Current Mirror Circuit | Differential Amplifier |
|---|---|
|
Use Scenario: Precision current replication in sensor biasing networks for automotive oxygen or pressure sensors. IC Role / Device Role / Timing Role: Dual NPN transistor pair providing matched current transfer ratio with <10% gain deviation and <2 mV VBE offset. Use Value: Eliminates need for discrete resistor matching or laser trimming, reducing BOM count and calibration steps in production. |
Use Scenario: Front-end amplification of low-level signals from MEMS accelerometers in ADAS control units. IC Role / Device Role / Timing Role: Matched transistor pair forming the core differential pair with common-emitter load configuration. Use Value: Achieves <1 mV input-referred offset drift over −40 °C to +125 °C, improving measurement accuracy without active nulling circuitry. |
| Active Load Configuration | Temperature-Stable Reference |
|
Use Scenario: High-output-impedance active load in rail-to-rail op-amp output stages for battery management ICs. IC Role / Device Role / Timing Role: TR1 as input transistor and TR2 as active load, leveraging matched hFE for consistent transconductance scaling. Use Value: Maintains >100 dB CMRR across temperature due to symmetrical parameter tracking, enhancing rejection of supply ripple. |
Use Scenario: Emitter-degenerated bandgap reference cell in automotive power supply supervisors. IC Role / Device Role / Timing Role: Matched NPN pair generating PTAT (proportional-to-absolute-temperature) current with minimal curvature error. Use Value: Enables ±1.5% reference voltage accuracy over full automotive temperature range without external compensation components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BS | hFE matching ratio not specified; VBE mismatch not characterized; same package and pinout. | Lacks AEC-Q101 qualification and guaranteed matching specs - suitable only for non-automotive consumer applications. | Select only when matching tolerance and automotive qualification are not required; verify hFE spread via lot sampling. |
| MBT3904DW1T1G | hFE matching ratio 0.85 min; VBE mismatch ≤5 mV; qualified to AEC-Q101 but higher VBE mismatch. | Higher VBE mismatch limits use in ultra-low-offset differential pairs; acceptable for general-purpose current mirrors. | Prefer when cost sensitivity outweighs sub-2 mV offset requirement; confirm thermal resistance (500 K/W) meets system cooling budget. |
Compared with BC847BS and MBT3904DW1T1G, BCM846BSX provides the tightest VBE matching (≤2 mV) and highest hFE ratio (≥0.9) among AEC-Q101-qualified dual NPNs in SOT363-3, making it optimal for precision analog functions where parameter correlation directly impacts system-level accuracy.
Availability
BCM846BSX is available at Aetrix Electronics and suitable for automotive sensor signal conditioning, precision current mirroring, and differential amplification requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for BCM846BSX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET devices, headquartered in Nijmegen, Netherlands.
BCM846BSX belongs to Nexperia's AEC-Q101-qualified precision bipolar transistor family, engineered specifically for automotive analog signal chains demanding matched parametric performance and long-term stability under harsh environmental conditions.
FAQ
Is BCM846BSX pin-compatible with BC847BS?
Yes, BCM846BSX shares identical SOT363-3 package dimensions, lead pitch (0.65 mm), and pin assignment (E-B-C-E-B-C) with BC847BS. However, BC847BS lacks guaranteed matching specifications and AEC-Q101 qualification, so direct substitution requires validation of hFE and VBE matching in the target application.
What is the maximum allowable junction temperature during continuous operation?
The absolute maximum junction temperature for BCM846BSX is 150 °C. Continuous operation at this limit requires thermal design ensuring Rth(j-a) ≤ 416 K/W, which corresponds to ≤300 mW total device power dissipation on a standard FR4 PCB with single-sided copper and tin-plated finish.
Does BCM846BSX support wave soldering?
Yes, BCM846BSX is qualified for wave soldering using the footprint defined in Figure 11 of the datasheet: 5.3 mm × 2.45 mm pad layout with 1.3 mm transport direction clearance. Preheating to 100–120 °C and peak temperature ≤260 °C for ≤5 seconds are recommended to avoid package damage.
How is hFE matching ratio calculated in the datasheet?
The hFE matching ratio is defined as the smaller hFE value divided by the larger hFE value of the two transistors (hFE1/hFE2 or hFE2/hFE1, whichever yields the lower quotient). A minimum ratio of 0.9 means the two transistors' current gains differ by no more than 10% under test conditions (VCE = 5 V, IC = 2 mA, Tamb = 25 °C).
BCM846BSX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 65V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 200mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BCM846BSX FAQ
1.How can I place an order for BCM846BSX through Aetrix?
Please submit a Request for Quotation (RFQ) for BCM846BSX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCM846BSX reliable?
The price and inventory of BCM846BSX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM846BSX is usually 5 days.
3.What payment methods are accepted for BCM846BSX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM846BSX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCM846BSX?
BCM846BSX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCM846BSX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCM846BSX?
For technical support, including BCM846BSX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM846BSX requirements.
6.How does Aetrix verify that BCM846BSX is sourced from the original manufacturer or authorized distributors?
All BCM846BSX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM846BSX meets industry standards.
7.What is the process for return or replacement of BCM846BSX?
All BCM846BSX units undergo pre-shipment inspection (PSI). If there is an issue with BCM846BSX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCM846BSX part is unused and in its original packaging.
Return procedure for BCM846BSX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCM846BSX Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
-
MBT2222ADW1T1G
onsemi
-
BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
-
DMMT5551-7-F
Diodes Incorporated
-
DMMT3904W-7-F
Diodes Incorporated
-
DMMT3906W-7-F
Diodes Incorporated
-
FMB3904
onsemi
-
FMB2222A
onsemi
-
ULQ2003D1013TR
STMicroelectronics
-
ZXTD4591E6TA
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
