My Inquiry
My Account
Nexperia USA Inc. BCM847BSHF
- Part No.:
- BCM847BSHF
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BCM847BSHF.pdf
- Description:
- TRANS 2NPN 45V 100MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,075
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BCM847BSHF from Nexperia is a matched dual NPN transistor in SOT363 (TSSOP6) package, rated for 45 V VCEO, 100 mA IC, and 175 °C junction temperature. It delivers precise hFE matching (0.95–1.05) and VBE matching (≤2 mV) between transistors, enabling high-accuracy current mirroring and differential amplification in space-constrained analog signal paths.
For engineers reviewing the BCM847BSHF datasheet, BCM847BSHF pinout, BCM847BSHF application, or BCM847BSHF equivalent, this device is selected for precision analog functions requiring matched gain and voltage characteristics across temperature, low parasitic capacitance (1.2 pF Cc), and robust thermal performance on FR4 PCBs.
Technical Context
This dual NPN transistor integrates two electrically isolated, thermally coupled transistors in a single ultra-small SOT363 package. Matching is specified at VCE = 5 V, IC = 2 mA, Tamb = 25 °C, with hFE1/hFE2 ratio bounded between 0.95 and 1.05 and ΔVBE ≤ 2 mV - ensuring stable bias point tracking in mirror and amplifier topologies.
It supports high-temperature operation up to 175 °C junction temperature and exhibits low saturation voltages (VCEsat = 200–300 mV at IC = 100 mA, IB = 5 mA), low collector capacitance (1.2 pF), and fT = 100 MHz at IC = 10 mA - confirming suitability for medium-speed analog control and feedback circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum safe collector-emitter voltage before breakdown; defines headroom in bias networks and current sources. |
| IC | 100 mA - Continuous collector current per transistor; sets maximum load drive capability in active-region circuits. |
| hFE matching | 0.95–1.05 - Ratio of DC current gains between TR1 and TR2; enables <1% gain error in mirrored current paths. |
| ΔVBE | ≤2 mV - Base-emitter voltage mismatch; ensures <0.3% input offset contribution in differential pairs at 2 mA bias. |
| Cc | 1.2 pF - Collector capacitance at VCB = 10 V; limits high-frequency roll-off and improves stability in broadband amplifiers. |
| Ptot (per device) | 400 mW - Total power dissipation limit at Tamb ≤ 25 °C on FR4; determines thermal margin in compact layouts. |
| Rth(j-a) | 375 K/W - Junction-to-ambient thermal resistance per device; informs derating curves for ambient temperatures >25 °C. |
Pinout & Package
SOT363 (TSSOP6) plastic surface-mount package: 6-pin, 0.65 mm pitch, 2.1 mm × 1.25 mm × 0.95 mm body height. Designed for reflow soldering with defined footprint per Figure 12 (sot363_fr).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of transistor TR1 - common reference node for TR1 current path; connected to ground or negative rail in most mirror configurations. |
| 2 | B1 | Base of transistor TR1 - controls TR1 collector current; requires stable bias network to maintain matching integrity with B2. |
| 3 | C2 | Collector of transistor TR2 - output node for TR2; used as active load or current sink in differential pair implementations. |
| 4 | E2 | Emitter of transistor TR2 - tied to E1 in current mirror or separated for differential bias; shared thermal environment enhances matching. |
| 5 | B2 | Base of transistor TR2 - driven identically to B1 in mirror mode; independent control enables differential input configuration. |
| 6 | C1 | Collector of transistor TR1 - primary output node for TR1; supplies matched current to load or next stage with minimal gain error. |
Key Features
| Feature | Design Value |
|---|---|
| Current gain matching | hFE1/hFE2 = 0.95–1.05 - reduces gain-dependent errors in precision current mirrors and active loads. |
| Base-emitter voltage matching | ΔVBE ≤ 2 mV - minimizes input offset in emitter-coupled pairs and improves CMRR in differential amplifiers. |
| Low collector capacitance | Cc = 1.2 pF - preserves bandwidth in high-gain stages and reduces phase shift in feedback loops. |
| High-temperature operation | Tj up to 175 °C - enables use in under-hood automotive modules, industrial motor drives, and power supply sensing circuits. |
| No mutual interference | Electrically isolated transistors - prevents crosstalk in mixed-signal designs where one transistor handles control and the other handles sensing. |
Applications
| Current Mirror | Differential Amplifier |
|---|---|
Use Scenario: Precision current replication in sensor biasing, DAC output buffers, and LED drivers where output current must track reference current over temperature. IC Role / Device Role / Timing Role: Dual NPN acts as matched current source/sink pair; TR1 sets reference current, TR2 replicates it with <1% error. Use Value: Achieves ±0.5% current matching over −40 °C to +125 °C ambient due to monolithic integration and thermal coupling. |
Use Scenario: Input stage of instrumentation amplifier or op-amp where input offset and CMRR are critical for microvolt-level signal conditioning. IC Role / Device Role / Timing Role: TR1 and TR2 form emitter-coupled pair; bases accept differential input, collectors feed active load or gain stage. Use Value: ΔVBE ≤ 2 mV contributes <0.3% of full-scale input offset at 2 mA bias, improving resolution in 16-bit+ data acquisition systems. |
| Active Load | Temperature-Stable Bias Network |
Use Scenario: High-impedance, voltage-controlled current sink in discrete op-amp output stages or Class-A audio preamplifiers. IC Role / Device Role / Timing Role: TR2 configured as diode-connected or cascode active load; TR1 provides gain with matched hFE for predictable transconductance. Use Value: Enables >1 MΩ small-signal impedance with <5% variation across production lots and temperature range. |
Use Scenario: Bias generation for RF power amplifiers or precision voltage references requiring stable quiescent current despite ambient shifts. IC Role / Device Role / Timing Role: TR1/TR2 operate in parallel or complementary modes to cancel thermal drift; base resistors set nominal current, matching maintains ratio. Use Value: Maintains <±2% IC variation from −55 °C to +150 °C ambient, eliminating need for external trim components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched dual transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BPDW1T1G | Same NPN/NPN topology, SOT-363, but hFE matching ratio not specified; VBE matching uncharacterized. | Lacks guaranteed matching specs - suitable only for non-critical bias or switching, not precision analog. | Select when cost sensitivity outweighs matching requirements and thermal coupling is not needed. |
| MBT3904DW1T1G | Lower VCEO (40 V), no hFE/VBE matching data; higher Cc (4 pF); rated to 150 °C only. | Not qualified for high-temp analog circuits; limited bandwidth and reduced voltage headroom restrict use in precision current sources. | Choose only for general-purpose dual switching where matching and temperature resilience are secondary. |
Compared with BC847BPDW1T1G and MBT3904DW1T1G, BCM847BSHF uniquely guarantees both hFE and VBE matching across temperature, supports 175 °C operation, and offers lower capacitance - making it the sole option for production-grade current mirrors and differential amplifiers demanding <1% matching fidelity.
Availability
BCM847BSHF is available at Aetrix Electronics and suitable for current mirror circuits, differential amplifiers, active load configurations, and temperature-stable bias networks requiring stable component supply and traceable sourcing.
Supply support for BCM847BSHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, headquartered in Nijmegen, Netherlands.
The BCM847BSHF belongs to Nexperia's precision bipolar transistor family, engineered specifically for analog signal conditioning applications demanding tight parameter matching and extended temperature resilience in compact SMT packages.
FAQ
What is the maximum continuous collector current per transistor in BCM847BSHF?
The maximum continuous collector current per transistor is 100 mA, as specified in the Absolute Maximum Ratings table under IC. This rating applies at Tamb ≤ 25 °C with proper PCB copper area; derating is required above 25 °C per the 375 K/W thermal resistance curve.
Does BCM847BSHF support operation at 150 °C ambient temperature?
Yes - the device is rated for ambient temperatures from −55 °C to +175 °C. At 150 °C ambient, its usable IC is reduced due to thermal derating; with Ptot = 400 mW and Rth(j-a) = 375 K/W, junction temperature remains within 175 °C limit if power dissipation stays below ~107 mW.
How is hFE matching verified between the two transistors?
hFE matching is measured per device under standardized conditions: VCE = 5 V, IC = 2 mA, Tamb = 25 °C. The ratio hFE1/hFE2 is guaranteed between 0.95 and 1.05 across production lots, confirmed by 100% automated parametric testing during final test.
Can BCM847BSHF be used as a drop-in replacement for standard dual transistors like BC847BDW?
Yes - BCM847BSHF shares identical SOT363 pinout, footprint, and soldering profile with BC847BDW, and is explicitly designated a drop-in replacement. However, unlike BC847BDW, it adds guaranteed matching and extended temperature capability, so design validation should confirm that the tighter specs do not introduce unintended interactions in legacy layouts.
BCM847BSHF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 200mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BCM847BSHF FAQ
1.How can I place an order for BCM847BSHF through Aetrix?
Please submit a Request for Quotation (RFQ) for BCM847BSHF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCM847BSHF reliable?
The price and inventory of BCM847BSHF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM847BSHF is usually 5 days.
3.What payment methods are accepted for BCM847BSHF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM847BSHF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCM847BSHF?
BCM847BSHF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCM847BSHF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCM847BSHF?
For technical support, including BCM847BSHF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM847BSHF requirements.
6.How does Aetrix verify that BCM847BSHF is sourced from the original manufacturer or authorized distributors?
All BCM847BSHF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM847BSHF meets industry standards.
7.What is the process for return or replacement of BCM847BSHF?
All BCM847BSHF units undergo pre-shipment inspection (PSI). If there is an issue with BCM847BSHF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCM847BSHF part is unused and in its original packaging.
Return procedure for BCM847BSHF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCM847BSHF Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
-
MBT2222ADW1T1G
onsemi
-
BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
-
DMMT5551-7-F
Diodes Incorporated
-
DMMT3904W-7-F
Diodes Incorporated
-
DMMT3906W-7-F
Diodes Incorporated
-
FMB3904
onsemi
-
FMB2222A
onsemi
-
ULQ2003D1013TR
STMicroelectronics
-
ZXTD4591E6TA
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
