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Nexperia USA Inc. BCM847BSHX
- Part No.:
- BCM847BSHX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BCM847BSHX.pdf
- Description:
- TRANS 2NPN 45V 100MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,200
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Product details
Overview
BCM847BSHX from Nexperia is a matched dual NPN transistor in SOT363 (SC-88) package, designed for precision analog functions requiring tight parameter matching between two transistors. It delivers VCEO = 45 V, IC = 100 mA per transistor, hFE matching ratio of 0.95–1.05, and VBE matching ≤2 mV at 2 mA/5 V - enabling high-accuracy current mirroring and differential amplification in space-constrained industrial signal conditioning circuits.
For engineers reviewing the BCM847BSHX datasheet, BCM847BSHX pinout, BCM847BSHX application, or BCM847BSHX equivalent, key selection criteria include transistor matching tolerance, thermal stability up to 175 °C, low Cc (1.2 pF), and compatibility with FR4 PCB reflow profiles per JEDEC J-STD-020.
Technical Context
This dual NPN device integrates two electrically isolated transistors on a single die within a TSSOP6 footprint, eliminating mutual interference while maintaining identical thermal and electrical environments for matched operation. Its design supports simultaneous biasing with shared thermal mass, critical for minimizing drift in high-precision analog front-ends.
The device operates across −55 °C to +175 °C ambient, with junction-to-solder-point thermal resistance of 170 K/W and per-device Ptot = 400 mW at Tamb ≤ 25 °C. Matching specifications are guaranteed under standardized test conditions (VCE = 5 V, IC = 2 mA, Tamb = 25 °C), not extrapolated or simulated.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum collector-emitter voltage before breakdown; defines safe operating range in linear and switching applications. |
| IC | 100 mA - Continuous collector current per transistor; sets upper limit for load-driving capability in mirror or gain stages. |
| hFE matching | 0.95–1.05 - Ratio of DC current gains between TR1 and TR2; ensures <±5% gain error in matched-pair configurations. |
| VBE matching | ≤2 mV - Base-emitter voltage difference at 2 mA; enables sub-0.1% current ratio accuracy in current mirrors. |
| Cc | 1.2 pF - Collector capacitance at VCB = 10 V; minimizes high-frequency phase shift in broadband amplifier feedback paths. |
| Ptot (per device) | 400 mW - Total power dissipation limit for both transistors on FR4 PCB; determines thermal derating requirements above 25 °C. |
| fT | 100 MHz - Transition frequency at IC = 10 mA; confirms usable bandwidth for RF biasing and medium-speed analog signal paths. |
Pinout & Package
Package: SOT363 (TSSOP6), 2.1 mm × 1.25 mm × 0.95 mm body, 0.65 mm lead pitch, surface-mount plastic package compliant with JEDEC MO-178AB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 | Low-impedance current sink node for first transistor; connects directly to reference or load ground path. |
| 2 | Base of TR1 | Control input for TR1; requires precise bias current to maintain matched VBE and hFE operation. |
| 3 | Collector of TR2 | Output node for second transistor; used as active load or output stage in differential pair configurations. |
| 4 | Emitter of TR2 | Shared or independent emitter node for TR2; enables cascode or current mirror topologies with separate emitter degeneration. |
| 5 | Base of TR2 | Independent control input for TR2; allows differential base drive or feedback-controlled biasing. |
| 6 | Collector of TR1 | Main output node for TR1; commonly tied to TR2 collector in current mirror or used as gain stage output. |
Key Features
| Feature | Design Value |
|---|---|
| Current gain matching | hFE1/hFE2 = 0.95–1.05 - Enables <±5% gain error in dual-transistor circuits without external trimming. |
| Base-emitter voltage matching | VBE1−VBE2 ≤ 2 mV - Supports <0.1% current ratio accuracy in precision current mirrors at 2 mA. |
| No mutual interference | Electrically isolated transistor dies - Prevents crosstalk in high-gain or RF-sensitive analog signal chains. |
| High-temperature operation | Junction temperature rating up to 175 °C - Allows deployment in under-hood automotive modules or industrial motor drives without derating. |
| Low collector capacitance | Cc = 1.2 pF - Reduces Miller effect in high-frequency amplifier stages, preserving phase margin above 10 MHz. |
Applications
| Current Mirror | Differential Amplifier |
|---|---|
Use Scenario: Precision current replication in sensor biasing, DAC output buffers, and laser diode drivers. IC Role / Device Role / Timing Role: Dual NPN matched pair acting as active current source/sink with fixed ratio determined by resistor scaling. Use Value: Achieves <0.1% current ratio error over −40 °C to +125 °C due to monolithic matching and thermal coupling. |
Use Scenario: Input stage of instrumentation amplifiers and op-amp front-ends requiring high CMRR. IC Role / Device Role / Timing Role: Matched NPN pair forming the core differential pair with common-emitter load configuration. Use Value: Delivers >70 dB CMRR at 1 kHz via VBE matching ≤2 mV and identical hFE response across temperature. |
| Active Load Circuit | Temperature-Stable Bias Generator |
Use Scenario: High-impedance active load in discrete op-amp designs and rail-to-rail output stages. IC Role / Device Role / Timing Role: TR2 configured as constant-current sink while TR1 provides gain, sharing thermal environment. Use Value: Maintains stable small-signal impedance (>1 MΩ) over 175 °C due to matched thermal coefficients and low Cc. |
Use Scenario: Reference voltage generation in power management ICs and voltage regulators. IC Role / Device Role / Timing Role: Matched transistors in PTAT (proportional-to-absolute-temperature) core with emitter degeneration. Use Value: Enables ±0.5 mV/°C reference drift tracking across −55 °C to +175 °C using intrinsic VBE matching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched dual NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BPDW1T1G | Same VCEO (45 V), but hFE matching ratio only specified as "matched" (no min/max); VBE matching not characterized. | Limited to non-critical matching applications; unsuitable for <0.5% current mirror accuracy or high-CMRR amplifiers. | Select when cost sensitivity outweighs matching precision; verify layout symmetry to compensate for missing characterization. |
| MBT3904DW1T1G | Lower VCEO (40 V), no published hFE or VBE matching data; higher Cc (3 pF). | Not recommended for precision analog; suitable only for general-purpose switching or digital logic interfacing. | Use only if matching is irrelevant and voltage headroom ≥5 V remains after derating; avoid in signal-path roles. |
Compared with BC847BPDW1T1G and MBT3904DW1T1G, BCM847BSHX uniquely guarantees both hFE and VBE matching with traceable limits, enabling predictable performance in analog circuits where parameter correlation directly impacts system accuracy.
Availability
BCM847BSHX is available at Aetrix Electronics and suitable for current mirror circuits, differential amplifiers, active load configurations, and temperature-stable bias generators requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BCM847BSHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient solutions.
BCM847BSHX belongs to Nexperia's precision-matched bipolar transistor product line, engineered specifically for analog signal integrity in industrial sensing, power management, and instrumentation systems demanding monolithic parameter correlation.
FAQ
What is the maximum continuous collector current per transistor in BCM847BSHX?
The maximum continuous collector current per transistor is 100 mA, as defined in the Absolute Maximum Ratings table under IC. This rating applies at Tamb ≤ 25 °C on a standard FR4 PCB with 35 µm copper; derating is required above that temperature per the 375 K/W per-device Rth(j-a) curve.
Can BCM847BSHX be used in automotive under-hood applications?
Yes - BCM847BSHX is rated for operation from −55 °C to +175 °C ambient and has been qualified for high-temperature reliability per Nexperia's industrial standards. While not AEC-Q101 automotive-qualified, its 175 °C junction rating and robust thermal characteristics support use in non-safety-critical under-hood modules with appropriate system-level validation.
How is hFE matching measured and guaranteed?
hFE matching is measured as hFE1/hFE2 at VCE = 5 V, IC = 2 mA, and Tamb = 25 °C, with a guaranteed ratio of 0.95–1.05. This is a monolithic matching specification verified during final test, not a statistical binning result, ensuring every unit meets the stated tolerance.
Is there a PNP complement to BCM847BSHX?
Yes - the PNP/PNP matched double transistor BCM857BSH is the direct complement, sharing identical SOT363 packaging, matching specifications (hFE ratio 0.95–1.05, VEB matching ≤2 mV), and thermal ratings. It enables complementary current mirrors and push-pull output stages with matched behavior.
BCM847BSHX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 200mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BCM847BSHX FAQ
1.How can I place an order for BCM847BSHX through Aetrix?
Please submit a Request for Quotation (RFQ) for BCM847BSHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCM847BSHX reliable?
The price and inventory of BCM847BSHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM847BSHX is usually 5 days.
3.What payment methods are accepted for BCM847BSHX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM847BSHX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCM847BSHX?
BCM847BSHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCM847BSHX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCM847BSHX?
For technical support, including BCM847BSHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM847BSHX requirements.
6.How does Aetrix verify that BCM847BSHX is sourced from the original manufacturer or authorized distributors?
All BCM847BSHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM847BSHX meets industry standards.
7.What is the process for return or replacement of BCM847BSHX?
All BCM847BSHX units undergo pre-shipment inspection (PSI). If there is an issue with BCM847BSHX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCM847BSHX part is unused and in its original packaging.
Return procedure for BCM847BSHX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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