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Nexperia USA Inc. BCM847BV,115
- Part No.:
- BCM847BV,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
BCM847BV,115.pdf
- Description:
- TRANS 2NPN 45V 100MA SOT-666
- Quantity:
- Payment:
- Shipping:
Inventory:3,200
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Product details
Overview
BCM847BV from Nexperia is an NPN/NPN matched double transistor in SOT666 package, designed for precision analog circuits requiring tight current gain (hFE1/hFE2 = 0.9–1) and base-emitter voltage matching (≤2 mV) at IC = 2 mA, VCE = 5 V, 25 °C. It delivers 45 V VCEO, 100 mA IC per transistor, and supports current mirror and differential amplifier topologies in space-constrained industrial and consumer signal conditioning.
For engineers reviewing the BCM847BV datasheet, BCM847BV pinout, BCM847BV application, or BCM847BV equivalent, this page provides verified pin functions, real-world matching performance data, thermal resistance values (Rth(j-a) = 416 K/W per device), and direct substitution guidance against BMC857BV and BC847BV variants.
Technical Context
The BCM847BV integrates two fully isolated NPN transistors on a single die within a 1.6 mm × 1.2 mm SOT666 package, enabling matched behavior critical for bias-stable analog building blocks. Its hFE matching ratio (0.9–1) and VBE mismatch (≤2 mV) are measured under identical conditions (VCE = 5 V, IC = 2 mA, Tamb = 25 °C), with junction temperature limited to 150 °C.
Thermal design is constrained by per-device Ptot = 300 mW at Tamb ≤ 25 °C on FR4 PCB, and Rth(j-a) = 416 K/W - significantly lower than per-transistor value (625 K/W) due to shared thermal path. Matching tolerances are defined using numerator-as-smaller-value convention for hFE and absolute subtraction for VBE.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - maximum safe collector-emitter voltage with base open; defines headroom for current mirror compliance. |
| IC | 100 mA per transistor - continuous DC collector current limit; sets usable dynamic range in amplifier stages. |
| hFE1/hFE2 | 0.9–1 - current gain matching ratio; ensures <10% gain error between transistors in differential pairs. |
| VBE1−VBE2 | ≤2 mV - base-emitter voltage mismatch; directly impacts input offset voltage in current mirrors and diff-amps. |
| Ptot | 300 mW per device - total power dissipation limit on FR4 PCB; governs thermal derating above 25 °C ambient. |
| fT | 100–250 MHz - transition frequency at IC = 10 mA; supports audio and low-MHz signal amplification. |
| Rth(j-a) | 416 K/W per device - junction-to-ambient thermal resistance; informs heatsinking requirements for sustained operation. |
Pinout & Package
SOT666 plastic surface-mount package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body. Pin 1 index marked; reflow soldering only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of transistor TR1 - connects to reference node or current sink in mirror configuration. |
| 2 | B1 | Base of transistor TR1 - controls TR1 current; matched base drive enables balanced operation. |
| 3 | C2 | Collector of transistor TR2 - output node in differential pair or mirrored current source. |
| 4 | E2 | Emitter of transistor TR2 - tied to E1 in current mirror; shared emitter improves matching stability. |
| 5 | B2 | Base of transistor TR2 - driven identically to B1 for precise mirroring or differential biasing. |
| 6 | C1 | Collector of transistor TR1 - primary input current node in current mirror topology. |
Key Features
| Feature | Design Value |
|---|---|
| Current gain matching | hFE1/hFE2 = 0.9–1 ensures ≤10% current ratio error in mirror circuits without trimming. |
| Base-emitter voltage matching | VBE1−VBE2 ≤ 2 mV limits input offset to sub-millivolt level in differential amplifiers. |
| Thermal coupling | Shared die and package reduce ΔT between transistors, improving long-term matching drift. |
| Drop-in replacement | Pin-compatible with standard double transistors (e.g., BC847BV), enabling upgrade without layout change. |
Applications
| Current Mirror | Differential Amplifier |
|---|---|
Use Scenario: Precision current replication in sensor biasing and DAC output stages. IC Role / Device Role / Timing Role: Dual NPN transistors configured as active load and current source with matched hFE and VBE. Use Value: Enables <1% current error over temperature due to integrated die matching and low VBE mismatch. | Use Scenario: Input stage of operational amplifiers and instrumentation amplifiers. IC Role / Device Role / Timing Role: Matched transistor pair forming the core differential pair with common-emitter configuration. Use Value: Reduces input offset voltage to ≤2 mV and improves CMRR by minimizing device parameter spread. |
| Active Load Circuit | Current-Mode Logic (CML) Driver |
Use Scenario: High-impedance, temperature-stable load in discrete op-amp designs. IC Role / Device Role / Timing Role: TR1 acts as current source while TR2 serves as active load with matched characteristics. Use Value: Maintains stable small-signal transconductance (gm) across process and temperature variations. | Use Scenario: Low-voltage, high-speed logic interface in mixed-signal SoC test fixtures. IC Role / Device Role / Timing Role: Differential switching pair providing rail-to-rail swing with matched switching thresholds. Use Value: Achieves <100 ps propagation delay skew between legs due to tight VBE and hFE tracking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BMC857BV | PNP/PNP matched pair; complementary polarity; same SOT666 package and matching specs (hFE1/hFE2 = 0.9–1, VBE1−VBE2 ≤ 2 mV). | Required where PNP-based current sources or inverted differential stages are used. | Select when circuit topology demands PNP matching instead of NPN; not interchangeable without redesign. |
| BC847BV | Unmatched NPN/NPN double transistor; same package and basic ratings but no guaranteed hFE or VBE matching. | Suitable for non-critical biasing where matching tolerance >15% is acceptable. | Choose for cost-sensitive applications where matching is unnecessary; avoid in precision analog paths. |
Compared with BMC857BV and BC847BV, the BCM847BV uniquely delivers guaranteed NPN matching for high-accuracy current replication and differential gain stability - making it irreplaceable in trimmed-free analog front-ends where offset and gain error budgets are sub-2 mV and <5%, respectively.
Availability
BCM847BV is available at Aetrix Electronics and suitable for current mirror circuits, differential amplifier stages, active load configurations, and CML driver designs requiring stable component supply and traceable sourcing.
Supply support for BCM847BV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.
The BCM847BV belongs to Nexperia's matched transistor product line, engineered specifically for precision analog signal conditioning where parameter tracking across temperature and process is mandatory.
FAQ
What is the maximum allowable junction temperature for BCM847BV?
The absolute maximum junction temperature (Tj) for BCM847BV is 150 °C, as defined in IEC 60134 limiting values. Operation beyond this threshold risks permanent parametric shift or failure. Derating begins at Tamb > 25 °C using Rth(j-a) = 416 K/W per device on FR4 PCB with standard footprint.
Is BCM847BV qualified for automotive applications?
No. BCM847BV is explicitly designated as non-automotive qualified per Nexperia's revision history and legal disclaimers. It has not undergone AEC-Q101 stress testing or automotive-grade qualification, and its use in safety-critical systems is prohibited per manufacturer guidelines.
How is hFE matching defined for BCM847BV?
hFE matching is expressed as hFE1/hFE2, where the smaller measured hFE value is used as the numerator. The datasheet guarantees a ratio between 0.9 and 1.0 at VCE = 5 V, IC = 2 mA, and Tamb = 25 °C - ensuring no more than 10% relative gain difference between the two transistors.
Can BCM847BV be used in linear regulator pass elements?
No. While rated for 100 mA IC and 45 V VCEO, BCM847BV lacks SOA (Safe Operating Area) characterization for linear regulation duty cycles. Its Ptot = 300 mW and thermal resistance make it unsuitable for sustained high-VCE × IC operation typical in pass devices; dedicated power transistors are required.
BCM847BV,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 2 NPN (Dual) Matched Pair
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 300mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
BCM847BV,115 FAQ
1.How can I place an order for BCM847BV,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCM847BV,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCM847BV,115 reliable?
The price and inventory of BCM847BV,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM847BV,115 is usually 5 days.
3.What payment methods are accepted for BCM847BV,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM847BV,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCM847BV,115?
BCM847BV,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCM847BV,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCM847BV,115?
For technical support, including BCM847BV,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM847BV,115 requirements.
6.How does Aetrix verify that BCM847BV,115 is sourced from the original manufacturer or authorized distributors?
All BCM847BV,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM847BV,115 meets industry standards.
7.What is the process for return or replacement of BCM847BV,115?
All BCM847BV,115 units undergo pre-shipment inspection (PSI). If there is an issue with BCM847BV,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCM847BV,115 part is unused and in its original packaging.
Return procedure for BCM847BV,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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