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Nexperia USA Inc. BCM847BV,315
- Part No.:
- BCM847BV,315
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
BCM847BV,315.pdf
- Description:
- TRANS 2NPN 45V 100MA SOT-666
- Quantity:
- Payment:
- Shipping:
Inventory:4,208
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Product details
Overview
BCM847BV from Nexperia is an NPN/NPN matched double transistor in SOT666 package, designed for precision analog functions requiring tight current gain (hFE1/hFE2 = 0.9–1.0) and base-emitter voltage matching (≤2 mV) at IC = 2 mA, VCE = 5 V, Tamb = 25 °C. It enables high-accuracy current mirroring and differential amplification in space-constrained industrial signal conditioning circuits.
For engineers reviewing the BCM847BV datasheet, BCM847BV pinout, BCM847BV application, or BCM847BV equivalent, this page delivers verified matching specifications, validated SOT666 terminal mapping, real-world use cases in current mirror and differential amplifier topologies, and confirmed alternatives with quantified hFE/VBE deviation margins.
Technical Context
The BCM847BV integrates two fully isolated NPN transistors on a single die within a 1.6 mm × 1.2 mm SOT666 package, enabling matched performance without external layout dependency. Its hFE matching ratio (min 0.9) and VBE mismatch (max 2 mV) are guaranteed under standardized test conditions (VCE = 5 V, IC = 2 mA, Tamb = 25 °C).
Thermal resistance is specified per device (Rth(j-a) = 416 K/W) and per transistor (625 K/W), reflecting its dual-transistor thermal coupling in FR4 PCB mounting. Absolute maximum ratings include VCEO = 45 V, IC = 100 mA per transistor, and Ptot = 300 mW per device - supporting robust operation in low-power analog front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum collector-emitter voltage before breakdown; defines safe operating range in linear amplifier stages. |
| hFE (per transistor) | 200–450 - DC current gain at VCE = 5 V, IC = 2 mA; determines small-signal amplification capability. |
| hFE1/hFE2 matching | 0.9–1.0 - Ratio of smaller/larger hFE values; ensures ≤10% gain mismatch between transistors for balanced differential pairs. |
| VBE1−VBE2 mismatch | ≤2 mV - Max absolute difference in base-emitter voltage; critical for <100 µV input offset in precision current mirrors. |
| IC max (per transistor) | 100 mA - Continuous collector current limit; supports rail-to-rail output swing in 5 V supply applications. |
| Ptot (per device) | 300 mW - Total power dissipation limit on FR4 PCB; sets thermal derating boundary for dual-transistor operation. |
| fT | 100–250 MHz - Transition frequency at VCE = 5 V, IC = 10 mA; enables stable operation up to ~50 MHz in broadband amplifiers. |
Pinout & Package
SOT666 ultra-small surface-mount plastic package (1.6 mm × 1.2 mm × 0.55 mm body, 0.5 mm pitch); 6-pin lead frame with exposed pad not present; reflow soldering only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of Transistor 1 - Primary current sink node for TR1; referenced to common ground in current mirror configurations. |
| 2 | B1 | Base of Transistor 1 - Input control node for TR1; bias current path determining collector current scaling. |
| 3 | C2 | Collector of Transistor 2 - Output node for TR2; delivers mirrored current in current mirror topology (Fig. 9). |
| 4 | E2 | Emitter of Transistor 2 - Shared emitter node with E1 in differential pair; establishes common-mode reference point. |
| 5 | B2 | Base of Transistor 2 - Second input node in differential amplifier; paired with B1 for balanced signal injection. |
| 6 | C1 | Collector of Transistor 1 - Primary output node for TR1; supplies reference current to TR2's collector (C2) in mirror setup. |
Key Features
| Feature | Design Value |
|---|---|
| Matched hFE ratio | 0.9–1.0 - Enables sub-1% gain error in active load and cascode current sources without trimming. |
| VBE matching tolerance | ≤2 mV - Reduces input offset voltage by >5× versus discrete transistor pairs in op-amp input stages. |
| Full internal isolation | Electrically isolated transistors - Prevents crosstalk-induced distortion in high-frequency differential amplifiers. |
| SOT666 footprint | 1.6 mm × 1.2 mm - Saves >60% board area vs. SO-8 dual transistors; compatible with automated pick-and-place. |
| Non-automotive qualified | Industrial temperature range (−65 °C to +150 °C) - Rated for extended ambient operation in non-safety-critical embedded systems. |
Applications
| Current Mirror | Differential Amplifier |
|---|---|
|
Use Scenario: Precision current source for sensor biasing in industrial 4–20 mA transmitter circuits. IC Role / Device Role / Timing Role: Dual-transistor current mirror providing 1:1 current replication with <1% error across temperature. Use Value: Eliminates need for laser-trimmed resistors or external calibration, reducing BOM count and assembly cost. |
Use Scenario: Input stage of rail-to-rail operational amplifier in programmable logic controller (PLC) analog input modules. IC Role / Device Role / Timing Role: Matched NPN pair forming high-CMRR differential pair with 90 dB common-mode rejection at 1 kHz. Use Value: Achieves <50 µV input offset drift over −40 °C to +85 °C, meeting IEC 61000-4-5 surge immunity requirements. |
| Active Load Circuit | Temperature-Stable Reference |
|
Use Scenario: Active load in low-noise preamplifier for piezoelectric vibration sensors in predictive maintenance systems. IC Role / Device Role / Timing Role: TR1 as input transistor, TR2 as active load with matched hFE ensuring constant small-signal transconductance. Use Value: Delivers 2.8 dB noise figure at 1 kHz and 100 Hz–10 kHz bandwidth, outperforming unmatched discrete solutions by 4 dB. |
Use Scenario: Core element of bandgap-independent voltage reference in battery-powered IoT node power management ICs. IC Role / Device Role / Timing Role: Matched pair generating PTAT (proportional-to-absolute-temperature) current for curvature-compensated reference generation. Use Value: Enables ±0.5% reference accuracy over −25 °C to +75 °C without external compensation components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BV | Unmatched version; no hFE or VBE matching guarantee; same SOT666 footprint and basic electrical specs. | Limited to non-critical gain-stable circuits; unsuitable for current mirrors requiring <5% error. | Select when matching is unnecessary and cost sensitivity outweighs precision requirements. |
| BMC857BV | PNP/PNP matched complement; identical matching specs (hFE1/hFE2 ≥ 0.9, VBE1−VBE2 ≤ 2 mV) but opposite polarity. | Required for complementary differential pairs or PNP-side current mirrors in push-pull output stages. | Choose for complementary symmetry in Class AB amplifiers or dual-supply current mirror implementations. |
Compared with BC847BV and BMC857BV, the BCM847BV uniquely provides NPN/NPN matching in a miniature package-enabling compact, high-precision current replication where polarity and matching are both mandatory, unlike the unmatched BC847BV or complementary BMC857BV.
Availability
BCM847BV is available at Aetrix Electronics and suitable for industrial sensor interfaces, PLC analog input modules, and battery-powered IoT node power management requiring stable component supply, consistent parametric matching, and SMT-compatible packaging.
Supply support for BCM847BV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, mobile, and computing markets.
The BCM847BV belongs to Nexperia's matched bipolar transistor product line, engineered specifically for analog signal integrity in space-constrained industrial control and instrumentation applications where transistor pairing accuracy directly impacts system-level measurement fidelity.
FAQ
What is the guaranteed hFE matching ratio for BCM847BV?
The BCM847BV guarantees a minimum hFE matching ratio of 0.9 (smaller hFE divided by larger hFE) under standard test conditions (VCE = 5 V, IC = 2 mA, Tamb = 25 °C). This is measured per device and documented in Table 1 and Table 7 of the official Nexperia datasheet dated 27 December 2022.
Can BCM847BV be used in automotive applications?
No. The BCM847BV is explicitly marked as non-automotive qualified in Section 15 of the datasheet. It has not undergone AEC-Q101 stress testing or qualification for automotive environments, and Nexperia disclaims liability for use in safety-critical or life-support systems per legal notices in the document.
What is the maximum allowable junction temperature for continuous operation?
The absolute maximum junction temperature (Tj) for BCM847BV is 150 °C, as defined in Table 5 (Limiting values). Operation above this threshold risks permanent degradation; derating is required above Tamb = 25 °C using the per-device Rth(j-a) = 416 K/W value from Table 6.
Is reflow soldering the only recommended assembly method?
Yes. Section 13 and footnote [2] in Table 5 state that reflow soldering is the only recommended soldering method for BCM847BV. Wave or hand soldering is not supported due to thermal limitations of the SOT666 package and risk of exceeding peak temperature limits during non-reflow processes.
BCM847BV,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 2 NPN (Dual) Matched Pair
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 300mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
BCM847BV,315 FAQ
1.How can I place an order for BCM847BV,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCM847BV,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCM847BV,315 reliable?
The price and inventory of BCM847BV,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM847BV,315 is usually 5 days.
3.What payment methods are accepted for BCM847BV,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM847BV,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCM847BV,315?
BCM847BV,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCM847BV,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCM847BV,315?
For technical support, including BCM847BV,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM847BV,315 requirements.
6.How does Aetrix verify that BCM847BV,315 is sourced from the original manufacturer or authorized distributors?
All BCM847BV,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM847BV,315 meets industry standards.
7.What is the process for return or replacement of BCM847BV,315?
All BCM847BV,315 units undergo pre-shipment inspection (PSI). If there is an issue with BCM847BV,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCM847BV,315 part is unused and in its original packaging.
Return procedure for BCM847BV,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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