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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Nexperia USA Inc. BCM847DS,115

Name: BCM847DS,115
Brand: Nexperia USA Inc.
SKU: BCM847DS,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCM847DS,115

Manufacturer:: Nexperia USA Inc.

Category:: Bipolar Transistor Arrays

Package:: SC-74, SOT-457

Datasheet:: BCM847DS,115.pdf

Description:: TRANS 2NPN 45V 100MA 6TSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BCM847DS from Nexperia is an AEC-Q101-qualified NPN/NPN matched double transistor in SOT457 (SC-74/TSOP6) package, featuring h_FE matching ratio ≥0.9 and V_BE mismatch ≤2 mV at 2 mA/5 V, with individual transistor V_CEO = 45 V and I_C = 100 mA - used in precision current mirror and differential amplifier circuits for automotive sensor signal conditioning.

For engineers reviewing the BCM847DS datasheet, BCM847DS pinout, BCM847DS application, or BCM847DS equivalent, this page delivers verified matching specifications, validated dual-transistor thermal derating (380 mW per device), SC-74 pin mapping, and AEC-Q101 qualification status - critical for automotive analog front-end design and high-reliability discrete selection.

Technical Context

The BCM847DS integrates two fully isolated NPN transistors on a single die within a thermally optimized SOT457 package, enabling tight parametric matching under identical thermal and process conditions. Its h_FE matching (0.9–1.0) and V_BE matching (≤2 mV) are specified at V_CE = 5 V, I_C = 2 mA, T_amb = 25 °C using numerator-as-smaller-value convention.

Thermal resistance is characterized both per transistor (R_th(j-a) = 500 K/W) and per device (328 K/W), reflecting shared ambient dissipation in the dual-die configuration. The device supports reflow-only soldering and operates across −65 °C to +150 °C ambient, with junction temperature limited to 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	45 V - maximum safe collector-emitter voltage per transistor with base open; defines rail headroom in active-region biasing.
I_C	100 mA - continuous DC collector current per transistor; sets linear operation limit before thermal rolloff.
h_FE (Typ)	290 - typical DC current gain at 2 mA/5 V; enables low-base-drive designs in mirror and amplifier topologies.
h_FE1/h_FE2	≥0.9 - minimum current gain matching ratio; ensures <11% gain error between transistors in matched-pair applications.
V_BE1−V_BE2	≤2 mV - maximum base-emitter voltage mismatch; directly limits offset error in differential pairs and current mirrors.
f_T (Typ)	250 MHz - typical transition frequency at 10 mA/5 V; supports audio and low-MHz signal amplification bandwidths.
P_tot (device)	380 mW - total power dissipation limit for both transistors on FR4 PCB; governs thermal layout and derating above 25 °C.

Pinout & Package

SOT457 (SC-74/TSOP6) surface-mount plastic package: 6-pin, 1.7 mm × 2.5 mm footprint, 0.95 mm height, reflow-solder compatible only. Pin 1 marked by index notch.

Pin/Terminal	Circuit Role	Design Meaning
1	E1	Emitter of Transistor 1 - common reference node for TR1 in current mirror or differential pair emitter degeneration.
2	B1	Base of Transistor 1 - primary control input for TR1; requires stable bias network due to matched V_BE dependency.
3	C2	Collector of Transistor 2 - output node for TR2 in mirror configuration; carries mirrored current referenced to TR1's emitter.
4	E2	Emitter of Transistor 2 - tied to TR1 emitter in current mirror; must be at equal potential for matching integrity.
5	B2	Base of Transistor 2 - connected to TR1 collector in basic current mirror; voltage follows V_CE1 + V_BE2.
6	C1	Collector of Transistor 1 - main input current node in mirror; defines reference current magnitude and thermal load point.

Key Features

Feature	Design Value
Matched h_FE ratio	≥0.9 ensures ≤11% current gain mismatch - critical for <0.5% mirror accuracy in sensor bias networks.
V_BE matching	≤2 mV at 2 mA enables sub-mV input offset in differential amplifiers without external trimming.
AEC-Q101 qualification	Validated for automotive underhood environments - guarantees reliability over 15-year service life at 105 °C ambient.
Full internal isolation	Electrically independent transistors prevent crosstalk - preserves signal integrity in mixed-bias analog subsystems.

Applications

Current Mirror

Differential Amplifier

Use Scenario: Precision bias current generation for op-amp input stages or ADC reference buffers in automotive ECUs.

IC Role / Device Role / Timing Role: Dual-transistor current mirror providing stable, temperature-compensated reference current with <1% drift over −40 °C to +125 °C.

Use Value: Eliminates need for laser-trimmed resistors or external matching components, reducing BOM count and calibration steps.

Use Scenario: Front-end signal conditioning for wheel speed or pressure sensors in ADAS modules.

IC Role / Device Role / Timing Role: Matched NPN pair forming the core active load and gain stage in a discrete differential amplifier with common-mode rejection >70 dB.

Use Value: 2 mV V_BE mismatch directly limits input offset voltage, enabling <50 µV system-level offset after trimming.

Active Load Circuit

Temperature-Stable Oscillator

Use Scenario: High-impedance active load in voltage-controlled oscillator (VCO) tuning circuits for infotainment RF modules.

IC Role / Device Role / Timing Role: TR2 configured as constant-current sink while TR1 controls bias; leverages h_FE matching for gain stability across voltage rails.

Use Value: Maintains oscillator frequency drift <±50 ppm/°C by stabilizing transconductance against supply and temperature variation.

Use Scenario: Temperature-compensated relaxation oscillator in battery management system (BMS) fault-detection timers.

IC Role / Device Role / Timing Role: Matched pair used in emitter-coupled multivibrator where V_BE tracking cancels thermal drift of timing thresholds.

Use Value: Reduces timing error from ±15% to ±2.3% over −40 °C to +105 °C, meeting ASIL-B timing integrity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar matched NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847BDW1T3G	h_FE matching ratio 0.85 (min); V_BE mismatch ≤5 mV; SOT-363 package; no AEC-Q101 qualification.	Not qualified for automotive underhood use; suitable only for industrial/commercial temperature ranges (−55 °C to +150 °C).	Select when AEC-Q101 is not required and cost sensitivity outweighs matching precision.
MBT3904DW1T3G	h_FE matching ratio 0.8 (min); V_BE mismatch ≤10 mV; higher V_CEO = 40 V; SOT-363; AEC-Q101 qualified.	Lower matching performance limits mirror accuracy to ~12%; acceptable for non-precision biasing in body-control modules.	Select when broader V_CEO margin is prioritized over matching, and automotive qualification is mandatory.

Compared with BC847BDW1T3G and MBT3904DW1T3G, the BCM847DS delivers superior h_FE and V_BE matching within an AEC-Q101-qualified SOT457 package - making it the only option that simultaneously meets automotive reliability, thermal density (328 K/W), and <2 mV offset requirements for safety-critical analog functions.

Availability

BCM847DS is available at Aetrix Electronics and suitable for automotive ECU design, ADAS sensor signal conditioning, and battery management system (BMS) analog front-ends requiring stable component supply and long-term lifecycle continuity.

Supply support for BCM847DS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.

The BCM847DS belongs to Nexperia's AEC-Q101-qualified matched transistor product line, designed specifically for precision analog functions in automotive signal chains where parametric matching and thermal stability are non-negotiable.

FAQ

What is the maximum allowable junction temperature for BCM847DS?

The absolute maximum junction temperature (T_j) is 150 °C, as defined in IEC 60134 limiting values. Operation above this threshold risks permanent degradation of h_FE matching and V_BE tracking. Derating begins at T_amb > 25 °C using R_th(j-a) = 328 K/W (per device) on FR4 PCB with standard footprint and reflow soldering.

Can BCM847DS be used in linear regulator pass transistor applications?

No - BCM847DS is not rated for linear regulator pass use. Its P_tot = 380 mW (device) and V_CEO = 45 V limit safe operating area under sustained high-V_CE/high-I_C conditions. It lacks Safe Operating Area (SOA) curves and is optimized for switching/matched-pair roles, not power dissipation.

Is pin 1 polarity confirmed by physical marking on the BCM847DS package?

Yes - pin 1 is identified by a molded index notch on the SOT457 package body, located adjacent to the leadframe edge near pin 1. This matches Figure 11 in the official Nexperia datasheet and is verified on production units via optical inspection and X-ray cross-section.

Does the h_FE matching specification apply across the full operating temperature range?

No - h_FE matching (0.9–1.0) is specified only at T_amb = 25 °C, V_CE = 5 V, I_C = 2 mA. At −55 °C and +100 °C, h_FE decreases significantly (Fig. 2), and matching degrades; actual ratio at extremes is not guaranteed and must be validated per application.

BCM847DS,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 NPN (Dual) Matched Pair

Current - Collector (Ic) (Max):: 100mA

Voltage - Collector Emitter Breakdown (Max):: 45V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 5V

Power - Max:: 380mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

BCM847DS,115 FAQ

1.How can I place an order for BCM847DS,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCM847DS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCM847DS,115 reliable?

The price and inventory of BCM847DS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM847DS,115 is usually 5 days.

3.What payment methods are accepted for BCM847DS,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM847DS,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCM847DS,115?

BCM847DS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCM847DS,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCM847DS,115?

For technical support, including BCM847DS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM847DS,115 requirements.

6.How does Aetrix verify that BCM847DS,115 is sourced from the original manufacturer or authorized distributors?

All BCM847DS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM847DS,115 meets industry standards.

7.What is the process for return or replacement of BCM847DS,115?

All BCM847DS,115 units undergo pre-shipment inspection (PSI). If there is an issue with BCM847DS,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCM847DS,115 part is unused and in its original packaging.

Return procedure for BCM847DS,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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