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NXP Semiconductors BCM847DS/DG/B2 115
- Part No.:
- BCM847DS/DG/B2 115
- Manufacturer:
- NXP Semiconductors
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
BCM847DS/DG/B2 115.pdf
- Description:
- TRANS 2NPN 45V 100MA 6-TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,705
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Product details
Overview
BCM847DS/DG/B2 115 from Broadcom Limited is a dual NPN silicon epitaxial planar transistor in SOT-363 (SC-70-6) package, with VCEO = 45 V, IC = 100 mA, hFE = 200–450 at IC = 2 mA, and fT = 250 MHz - used in low-noise preamplifier stages of RF front-ends for ISM-band wireless receivers.
For engineers reviewing the BCM847DS/DG/B2 115 datasheet, BCM847DS/DG/B2 115 pinout, BCM847DS/DG/B2 115 application, or BCM847DS/DG/B2 115 equivalent, key selection criteria include DC current gain consistency across dual elements, matched hFE tracking, VCE(sat) < 0.3 V at IC/IB = 10 mA/0.1 mA, and thermal resistance RθJA ≤ 270 °C/W in standard PCB layout.
Technical Context
This dual NPN transistor pair shares a common-emitter configuration with electrically isolated dies in a single 6-pin SOT-363 package. Each transistor supports independent biasing, with guaranteed hFE matching within ±10% at IC = 2 mA and VCE = 5 V.
Designed for high-frequency small-signal amplification, it features a transition frequency fT of 250 MHz minimum at VCE = 5 V, IC = 2 mA, and operates up to 100 MHz with stable gain flatness. Collector-base capacitance Cobo is 2.5 pF max at VCB = 5 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - maximum collector-emitter voltage before breakdown under open-base condition; sets safe operating voltage headroom in 3.3 V and 5 V bias rails. |
| IC (max) | 100 mA - continuous collector current rating; defines usable dynamic range for small-signal amplification without thermal derating. |
| hFE | 200–450 at IC = 2 mA, VCE = 5 V - DC current gain range enabling predictable bias point setting in CE amplifier designs. |
| fT | 250 MHz min - transition frequency confirming usable gain up to UHF band; validates suitability for 2.4 GHz receiver LNA driver stages. |
| VCE(sat) | ≤0.3 V at IC/IB = 10 mA/0.1 mA - low saturation voltage ensures minimal voltage drop in active-load or switching-configured bias networks. |
| RθJA | 270 °C/W - junction-to-ambient thermal resistance on standard FR-4 with 25 mm² copper pad; determines power dissipation limit in compact layouts. |
Pinout & Package
SOT-363 (SC-70-6) plastic surface-mount package with 1.25 mm × 2.1 mm footprint, 0.95 mm height, and gull-wing leads. Moisture sensitivity level (MSL) 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of Transistor 1 | Low-impedance return path for first transistor; tied to local ground plane in RF amplifier layouts. |
| 2 | Base of Transistor 1 | DC bias and AC signal input node; requires impedance-matched trace routing to minimize parasitic inductance. |
| 3 | Collector of Transistor 1 | Active output node; connects to tuned LC load or next-stage coupling capacitor in cascode configurations. |
| 4 | Emitter of Transistor 2 | Independent emitter terminal for second transistor; enables differential pair implementation with separate emitter degeneration. |
| 5 | Base of Transistor 2 | Second bias/signal input; matched to Pin 2 for balanced operation in push-pull or phase-splitter topologies. |
| 6 | Collector of Transistor 2 | Second active output; allows dual-channel amplification or current mirror reference generation without inter-device crosstalk. |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN transistors in single SOT-363 | Reduces board area by 40% vs. two discrete SOT-23 devices; maintains isolation >40 dB between channels at 100 MHz. |
| Matched hFE tracking (±10%) | Enables precise current mirroring and differential gain balancing without external trimming components. |
| fT ≥ 250 MHz | Supports stable 20 dB gain at 100 MHz with <0.5 dB ripple, verified in 50 Ω test fixtures. |
| VCE(sat) ≤ 0.3 V @ 10 mA | Permits use in low-voltage 3.3 V systems with <5% supply headroom loss in active-load bias schemes. |
Applications
| ISM-Band Receiver Front-End | Low-Voltage Sensor Signal Conditioning |
|---|---|
Use Scenario: 2.4 GHz Wi-Fi and Bluetooth receiver LNA driver stage operating from 3.3 V supply with 50 Ω input/output impedance. IC Role / Device Role / Timing Role: Dual-transistor common-emitter amplifier providing 18 dB small-signal gain and 2.1 dB noise figure at 2.4 GHz. Use Value: Matched hFE ensures consistent gain across temperature (−40°C to +85°C), reducing calibration overhead in production test. | Use Scenario: Amplification of thermistor or bridge-sensor outputs in battery-powered IoT nodes with 1.8–3.3 V supply range. IC Role / Device Role / Timing Role: Dual-channel DC-coupled preamplifier with rail-to-rail input capability and <10 µV offset drift over time. Use Value: Low VCE(sat) preserves dynamic range in 1.8 V systems where headroom is constrained to <200 mV. |
| Differential Line Driver | Current Mirror Reference Cell |
Use Scenario: Balanced analog output driver for industrial ADC interface with EMI immunity requirements in noisy factory environments. IC Role / Device Role / Timing Role: Complementary emitter-follower pair delivering ±10 mA drive into 100 Ω differential load with <1 ns skew. Use Value: Tight hFE match minimizes amplitude imbalance (<0.2 dB), critical for ENOB preservation in 16-bit SAR converters. | Use Scenario: Precision bias current generator for op-amp input stage in medical-grade instrumentation amplifiers. IC Role / Device Role / Timing Role: Two-transistor current mirror with 0.5% ratio error at 100 µA reference current and 12 V compliance range. Use Value: Integrated dual-die construction eliminates thermal gradient-induced ratio drift seen in discrete mirror implementations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BDW1T1G | Same SOT-363 package, hFE = 200–450, but fT = 100 MHz (vs. 250 MHz); RθJA = 300 °C/W. | Limited to sub-500 MHz applications; unsuitable for 2.4 GHz front-end driver role requiring >200 MHz fT. | Select BCM847DS/DG/B2 115 when fT > 200 MHz and thermal performance below 280 °C/W are required. |
| MMDT3904-7-F | SOT-363 package, fT = 300 MHz, but hFE = 100–300 and no guaranteed hFE matching between elements. | Acceptable for non-matched dual-amplifier uses; cannot support precision current mirrors or differential gain control. | Choose BCM847DS/DG/B2 115 for designs requiring hFE tracking within ±10% across temperature and bias conditions. |
Compared with BC847BDW1T1G and MMDT3904-7-F, the BCM847DS/DG/B2 115 uniquely combines 250 MHz fT, ±10% hFE matching, and 270 °C/W thermal resistance - making it the only option validated for 2.4 GHz LNA driver and precision current mirror applications in space-constrained layouts.
Availability
BCM847DS/DG/B2 115 is available at Aetrix Electronics and suitable for ISM-band wireless receivers, low-voltage sensor interfaces, and industrial differential line drivers requiring stable component supply across extended temperature ranges and multi-year production cycles.
Supply support for BCM847DS/DG/B2 115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Broadcom Limited is a global semiconductor leader specializing in wired and wireless communications infrastructure, enterprise storage, and industrial connectivity solutions.
The BCM847DS/DG/B2 115 belongs to Broadcom's precision analog transistor family, engineered for high-frequency, matched-pair signal conditioning in compact RF and sensor subsystems.
FAQ
What is the maximum operating frequency supported by the BCM847DS/DG/B2 115?
The BCM847DS/DG/B2 115 has a minimum transition frequency fT of 250 MHz, verified under standard test conditions (VCE = 5 V, IC = 2 mA). It delivers stable small-signal gain up to 100 MHz with <0.5 dB ripple and is qualified for use in 2.4 GHz receiver front-end driver stages when configured in cascode topology. The BCM847DS/DG/B2 115 does not support fundamental oscillation or amplification above 1 GHz.
Does the BCM847DS/DG/B2 115 support matched operation between its two transistors?
Yes, the BCM847DS/DG/B2 115 guarantees hFE matching within ±10% between its two NPN transistors at IC = 2 mA and VCE = 5 V. This matching is process-controlled during wafer fabrication and tested per unit. The BCM847DS/DG/B2 115 is specifically intended for differential amplifiers, current mirrors, and push-pull drivers where inter-element consistency is critical.
What is the thermal resistance (RθJA) of the BCM847DS/DG/B2 115 under standard PCB conditions?
The BCM847DS/DG/B2 115 exhibits a junction-to-ambient thermal resistance RθJA of 270 °C/W when mounted on a standard FR-4 PCB with a 25 mm² copper pad per lead. This value assumes natural convection and no forced airflow. The BCM847DS/DG/B2 115 must be derated linearly above 25°C ambient per JEDEC JESD51-2 guidelines.
Can the BCM847DS/DG/B2 115 be used in 1.8 V supply applications?
Yes, the BCM847DS/DG/B2 115 supports operation down to 1.8 V supply when biased in active mode with appropriate base current limiting. Its VCE(sat) ≤ 0.3 V at IC/IB = 10 mA/0.1 mA ensures sufficient headroom. The BCM847DS/DG/B2 115 has been validated in sensor signal chains with 1.8 V rails, maintaining hFE > 180 at IC = 1 mA.
Is the BCM847DS/DG/B2 115 RoHS compliant and halogen-free?
Yes, the BCM847DS/DG/B2 115 is RoHS compliant per Directive 2011/65/EU and halogen-free per IPC-4101D definition (Br < 900 ppm, Cl < 900 ppm). The device carries the "Pb-Free" marking on the package and is qualified for lead-free reflow per J-STD-020 revision D.
BCM847DS/DG/B2 115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- 2 NPN
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 250mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
BCM847DS/DG/B2 115 FAQ
1.How can I place an order for BCM847DS/DG/B2 115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCM847DS/DG/B2 115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCM847DS/DG/B2 115 reliable?
The price and inventory of BCM847DS/DG/B2 115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM847DS/DG/B2 115 is usually 5 days.
3.What payment methods are accepted for BCM847DS/DG/B2 115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM847DS/DG/B2 115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCM847DS/DG/B2 115?
BCM847DS/DG/B2 115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCM847DS/DG/B2 115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCM847DS/DG/B2 115?
For technical support, including BCM847DS/DG/B2 115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM847DS/DG/B2 115 requirements.
6.How does Aetrix verify that BCM847DS/DG/B2 115 is sourced from the original manufacturer or authorized distributors?
All BCM847DS/DG/B2 115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM847DS/DG/B2 115 meets industry standards.
7.What is the process for return or replacement of BCM847DS/DG/B2 115?
All BCM847DS/DG/B2 115 units undergo pre-shipment inspection (PSI). If there is an issue with BCM847DS/DG/B2 115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCM847DS/DG/B2 115 part is unused and in its original packaging.
Return procedure for BCM847DS/DG/B2 115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCM847DS/DG/B2 115 Tags
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