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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Nexperia USA Inc. BCM847QASZ

Name: BCM847QASZ
Brand: Nexperia USA Inc.
SKU: BCM847QASZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCM847QASZ

Manufacturer:: Nexperia USA Inc.

Category:: Bipolar Transistor Arrays

Package:: 6-XFDFN Exposed Pad

Datasheet:: BCM847QASZ.pdf

Description:: TRANS 2NPN 45V 100MA DFN1010B-6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BCM847QAS from Nexperia is an AEC-Q101-qualified NPN/NPN matched double transistor in a DFN1010B-6 (SOT1216) package, rated for 45 V V_CEO, 100 mA I_C, and ±2 mV V_BE1−V_BE2 matching at 2 mA. It delivers 200–450 h_FE per transistor and supports current mirror and differential amplifier functions in space-constrained automotive signal conditioning circuits.

For engineers reviewing the BCM847QAS datasheet, BCM847QAS pinout, BCM847QAS application, or BCM847QAS equivalent, this device is selected for precision analog matching, low-profile SMT integration, thermal performance on FR4 PCBs, and automotive-grade reliability validation per AEC-Q101.

Technical Context

This dual NPN transistor pair integrates two electrically matched transistors in a single ultra-thin 1.05 mm × 1.05 mm DFN1010B-6 package with 0.37 mm height. Matching specifications include h_FE1/h_FE2 = 0.95–1.05 and V_BE1−V_BE2 ≤ 2 mV under V_CE = 5 V, I_C = 2 mA, T_amb = 25 °C conditions.

The device operates across −55 °C to +150 °C ambient, with per-device P_tot = 350 mW at T_amb ≤ 25 °C on standard FR4 PCB, and R_th(j-a) = 358 K/W. Its pinout places complementary emitter-base-collector terminals for direct current mirror topology implementation without cross-coupling traces.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	45 V - Maximum collector-emitter voltage before breakdown; defines safe operating range in bias and switching applications.
I_C	100 mA - Continuous DC collector current per transistor; sets linear and switching load capability.
h_FE (Typ)	290 - DC current gain at V_CE = 5 V, I_C = 2 mA; determines base drive requirements in amplification stages.
V_BE1−V_BE2	≤2 mV - Base-emitter voltage mismatch between transistors; enables <0.1% current error in precision mirrors.
P_tot (Per device)	350 mW - Total power dissipation limit on FR4 PCB; governs thermal design margin and layout copper area.
f_T	100 MHz - Transition frequency at V_CE = 5 V, I_C = 10 mA; supports high-speed small-signal amplification up to ~10 MHz bandwidth.
R_th(j-a)	358 K/W - Junction-to-ambient thermal resistance per device; used to calculate ΔT_j = P_tot × R_th(j-a) for junction temperature estimation.

Pinout & Package

Package: DFN1010B-6 (SOT1216), 1.05 mm × 1.05 mm × 0.37 mm, leadless, thermally enhanced, surface-mount plastic package with exposed die pad (not electrically connected).

Pin	Circuit Role	Design Meaning
1	E1	Emitter of Transistor 1 - Common reference node for TR1 in current mirror or differential pair configurations.
2	B1	Base of Transistor 1 - Input control terminal for TR1; matched to B2 for symmetrical biasing.
3	C2	Collector of Transistor 2 - Output node of TR2; paired with C1 to form mirrored output path.
4	E2	Emitter of Transistor 2 - Shared or independently biased emitter node for TR2; enables cascode or active load topologies.
5	B2	Base of Transistor 2 - Matched input terminal to B1; ensures identical V_BE and h_FE tracking under same bias conditions.
6	C1	Collector of Transistor 1 - Primary output node of TR1; forms reference leg in current mirror or input side in differential pair.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under stress test conditions including HTOL, TC, HTRB, and ESD; enables use in engine control, body electronics, and ADAS sensor interfaces.
h_FE matching (0.95–1.05)	Ensures ≤5% current ratio error between transistors in mirror configurations without trimming resistors or feedback.
Low profile (0.37 mm height)	Enables integration into ultra-thin modules such as camera ECUs, LED drivers, and compact motor controllers where Z-height is constrained.
V_BE matching (≤2 mV)	Reduces offset-induced errors in differential amplifiers and improves common-mode rejection in precision analog front-ends.
Application-optimized pinout	Adjacent emitter and base pins (E1/B1 and E2/B2) simplify routing for matched-pair bias networks and minimize parasitic asymmetry.

Applications

Current Mirror

Differential Amplifier

Use Scenario: Precision current replication in sensor biasing, DAC output stages, and LED driver references.

IC Role / Device Role / Timing Role: Dual-transistor current mirror core providing matched I_OUT = I_IN × (h_FE2/h_FE1) with <5% error.

Use Value: Eliminates need for discrete matching or laser-trimmed resistors; achieves <0.1% current tracking over temperature due to monolithic V_BE and h_FE matching.

Use Scenario: Input stage of automotive-grade op-amps and instrumentation amplifiers for wheel speed or battery voltage sensing.

IC Role / Device Role / Timing Role: Matched NPN pair forming the active load and input differential pair in a folded-cascode topology.

Use Value: Delivers >70 dB CMRR at DC and 1 kHz due to ≤2 mV V_BE mismatch and identical thermal coupling on shared die.

Active Load

Temperature-Stable Bias Generator

Use Scenario: High-impedance active load in rail-to-rail output stages of automotive audio amplifiers.

IC Role / Device Role / Timing Role: TR2 configured as constant-current sink (C2→E2) while TR1 provides gain; leverages matched h_FE for stable I_LOAD.

Use Value: Maintains >1 MΩ small-signal impedance across −40 °C to +125 °C without external compensation components.

Use Scenario: Reference current generation for bandgap circuits in automotive microcontrollers and power management ICs.

IC Role / Device Role / Timing Role: Matched pair operating in Wilson or Widlar configuration to produce PTAT (proportional-to-absolute-temperature) current with <50 ppm/°C drift.

Use Value: Achieves <±1.5% reference current variation from −40 °C to +150 °C using only internal matching-no external calibration required.

Equivalent & Alternatives

The following parts are listed as comparable options for similar matched NPN transistor pair applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCM847BS	Same die, but in SOT363 (SC-88) package; 1.25 mm × 2.1 mm, 1.1 mm height; no AEC-Q101 qualification.	Non-automotive industrial or consumer designs where footprint size and qualification are not mandatory.	Select when board space allows larger package and automotive qualification is unnecessary; offers identical electrical matching but higher thermal resistance (R_th(j-a) = 420 K/W).
MBT3904DW1T1G	Onsemi dual NPN in SOT-363; V_CEO = 40 V, I_C = 200 mA, h_FE matching unspecified; no V_BE matching spec; not AEC-Q101 qualified.	General-purpose dual transistor use where matching is secondary to cost or availability.	Select only for non-matching applications like discrete logic or simple switching; lacks guaranteed V_BE/h_FE matching and automotive qualification.

Compared with BCM847BS and MBT3904DW1T1G, the BCM847QAS uniquely combines AEC-Q101 qualification, 2 mV V_BE matching, and 0.37 mm profile-making it the sole choice for space-constrained, high-reliability automotive current mirrors and differential pairs requiring monolithic matching.

Availability

BCM847QAS is available at Aetrix Electronics and suitable for automotive sensor interfaces, precision current mirrors, and differential amplifier stages requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for BCM847QAS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including discretes, logic, and MOSFETs-with manufacturing rooted in process technology and automotive-grade quality systems.

The BCM847QAS belongs to Nexperia's AEC-Q101-qualified matched transistor family, designed specifically for automotive analog signal conditioning where monolithic matching, thermal stability, and ultra-small packaging are critical.

FAQ

Is BCM847QAS pin-compatible with BCM847BS?

No. BCM847QAS uses the DFN1010B-6 (SOT1216) 6-pin leadless package with specific pin 1–6 layout, while BCM847BS uses the SOT363 (SC-88) 6-pin leaded package with different pin assignment and solder footprint. PCB redesign is required for substitution.

What is the maximum allowable continuous power dissipation per transistor at 85 °C ambient?

At T_amb = 85 °C, derating from the 25 °C limit of 230 mW per transistor applies. Using the per-transistor power derating curve (Fig. 2), P_tot ≈ 140 mW is the maximum continuous dissipation per transistor to maintain T_j ≤ 150 °C on standard FR4 PCB.

Does BCM847QAS support reflow soldering per JEDEC J-STD-020?

Yes. The DFN1010B-6 package is qualified for lead-free reflow per JEDEC J-STD-020D, with peak temperature up to 260 °C for ≤30 seconds. Recommended footprint matches Nexperia's sot1216_fr land pattern (0.35 mm pad width, 0.9 mm pad length, 0.5 mm pitch).

Can BCM847QAS be used in PNP-complementary circuits?

Yes-its PNP complement is the AEC-Q101-qualified BCM857QAS in the same DFN1010B-6 package. Both share identical footprint, thermal characteristics, and matching specs, enabling fully matched NPN/PNP differential pairs or complementary current mirrors without layout asymmetry.

BCM847QASZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-XFDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 NPN (Dual)

Current - Collector (Ic) (Max):: 100mA

Voltage - Collector Emitter Breakdown (Max):: 45V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 5V

Power - Max:: 350mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: DFN1010B-6

BCM847QASZ FAQ

1.How can I place an order for BCM847QASZ through Aetrix?

Please submit a Request for Quotation (RFQ) for BCM847QASZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCM847QASZ reliable?

The price and inventory of BCM847QASZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM847QASZ is usually 5 days.

3.What payment methods are accepted for BCM847QASZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM847QASZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCM847QASZ?

BCM847QASZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCM847QASZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCM847QASZ?

For technical support, including BCM847QASZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM847QASZ requirements.

6.How does Aetrix verify that BCM847QASZ is sourced from the original manufacturer or authorized distributors?

All BCM847QASZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM847QASZ meets industry standards.

7.What is the process for return or replacement of BCM847QASZ?

All BCM847QASZ units undergo pre-shipment inspection (PSI). If there is an issue with BCM847QASZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCM847QASZ part is unused and in its original packaging.

Return procedure for BCM847QASZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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