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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Nexperia USA Inc. BCM856BSHF

Name: BCM856BSHF
Brand: Nexperia USA Inc.
SKU: BCM856BSHF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCM856BSHF

Manufacturer:: Nexperia USA Inc.

Category:: Bipolar Transistor Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: BCM856BSHF.pdf

Description:: TRANS 2PNP 65V 100MA 6-TSSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BCM856BSHF from Nexperia is a PNP/PNP matched double transistor in SOT363 (TSSOP6) package, designed for precision analog functions requiring tight parameter matching between two transistors. It delivers V_CEO = −65 V, I_C = −100 mA per transistor, h_FE matching ratio of 0.95–1.05, and V_BE matching ≤ 2 mV at −2 mA, enabling high-accuracy current mirroring and differential amplification in compact industrial signal conditioning circuits.

For engineers reviewing the BCM856BSHF datasheet, BCM856BSHF pinout, BCM856BSHF application, or BCM856BSHF equivalent, this device is selected for its verified current gain and base-emitter voltage matching, low collector-emitter saturation voltage (−200 mV at −100 mA), and operation up to 175 °C - critical for thermal-stable bias networks and matched-pair amplifier stages.

Technical Context

This dual PNP transistor integrates two electrically isolated, thermally coupled transistors in a single SOT363 package. Each transistor exhibits identical absolute maximum ratings (V_CEO = −65 V, I_C = −100 mA, T_j = 175 °C) and shares a common thermal resistance R_th(j-a) = 375 K/W (per device), ensuring consistent thermal tracking during operation.

The device achieves matched h_FE (0.95–1.05) and V_BE (≤2 mV difference) under standardized conditions (V_CE = −5 V, I_C = −2 mA, T_amb = 25 °C), with low parasitic capacitances (C_c = 1.8 pF, C_e = 8.5 pF) and f_T = 100 MHz - supporting stable high-frequency analog performance without mutual interference.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−65 V: Maximum safe collector-emitter voltage with open base; defines breakdown margin in high-side switch or mirror applications.
I_C	−100 mA: Continuous collector current per transistor; supports medium-current biasing and active load operation.
h_FE Matching	0.95–1.05: Ratio of DC current gains between TR1 and TR2; enables <1% gain error in current mirrors and differential pairs.
V_BE Matching	≤2 mV: Max base-emitter voltage difference at −2 mA; ensures <0.3% input offset contribution in matched-pair amplifiers.
V_CE(sat)	−200 mV at −100 mA/−5 mA: Low saturation voltage minimizes power loss and improves efficiency in active-load configurations.
P_tot (per device)	400 mW at T_amb ≤ 25 °C: Total dissipation limit for both transistors on FR4 PCB; sets thermal design boundary for layout.
f_T	100 MHz: Transition frequency at −10 mA; supports stable small-signal amplification up to mid-VHF range.

Pinout & Package

SOT363 (TSSOP6) plastic surface-mount package: 2.1 mm × 1.25 mm × 0.95 mm body, 0.65 mm lead pitch, 6-pin outline with exposed pad-compatible footprint.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter of TR1	Primary current sink node for first transistor; connects to reference or load return path in mirror topologies.
2	Base of TR1	Control input for TR1; biased to set operating point in matched-pair configurations.
3	Collector of TR2	Output node for second transistor; used as active load or output stage collector in differential amplifiers.
4	Emitter of TR2	Second emitter node; tied to common reference or degeneration resistor in balanced designs.
5	Base of TR2	Matched control input for TR2; driven identically to Pin 2 for symmetry-critical applications.
6	Collector of TR1	Main output collector for TR1; interfaces with load or next-stage input in current-source implementations.

Key Features

Feature	Design Value
Current gain matching	h_FE1/h_FE2 = 0.95–1.05 ensures <5% gain mismatch across temperature, reducing error in precision current sources.
Base-emitter voltage matching	V_BE1−V_BE2 ≤ 2 mV eliminates >0.3% input offset in differential pair inputs at 2 mA bias.
Low collector-emitter saturation voltage	V_CE(sat) = −200 mV at −100 mA enables <20 mW conduction loss per transistor in active-load switches.
High-temperature operation	Junction rating up to 175 °C allows use in under-hood, motor drive, and industrial power supply bias networks.
No mutual interference	Electrically isolated transistors prevent crosstalk in mixed-signal ICs or multi-channel sensor front-ends.

Applications

Current Mirror

Differential Amplifier

Use Scenario: Precision current replication in analog front-ends and sensor biasing circuits where input current must be mirrored with minimal error.

IC Role / Device Role / Timing Role: Dual PNP transistor configured as matched emitter-coupled pair, with bases tied and collectors serving as input/output nodes.

Use Value: Achieves <1% current ratio error over −40 °C to +125 °C due to guaranteed h_FE and V_BE matching.

Use Scenario: Input stage of operational transconductance amplifiers (OTAs) and instrumentation amplifiers requiring low input offset and high CMRR.

IC Role / Device Role / Timing Role: Matched PNP pair forms the core differential pair, with emitters tied to current source and collectors driving active loads.

Use Value: Delivers <0.5 mV input offset drift and >80 dB CMRR at 1 kHz, enabled by sub-2 mV V_BE mismatch and thermal coupling.

Active Load Circuit

Temperature-Stable Bias Network

Use Scenario: High-impedance active load in discrete op-amp output stages or RF amplifier cascodes.

IC Role / Device Role / Timing Role: TR2 operates as constant-current sink while TR1 provides gain; collectors serve as high-Z load nodes.

Use Value: Maintains >10 MΩ small-signal impedance up to 100 kHz with <0.1% variation across 150 °C ambient swing.

Use Scenario: Bias generation for Class AB audio amplifiers and power management ICs requiring stable quiescent current over wide temperature ranges.

IC Role / Device Role / Timing Role: Dual transistor implements complementary V_BE-based current reference with self-tracking thermal compensation.

Use Value: Enables <±5% I_Q variation from −55 °C to +175 °C, eliminating need for external trim components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar matched PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCM846BSH	NPN/NPN complement; same package, matching specs, and thermal rating but opposite polarity.	Required where NPN-based current mirrors or differential pairs dominate circuit topology (e.g., NPN-input op-amps).	Select when circuit architecture mandates NPN devices; not interchangeable with BCM856BSHF without topology revision.
MBT3906DW1T1G	PNP/PNP dual with looser h_FE matching (±20%), no V_BE matching spec, and lower T_j = 150 °C.	Suitable for non-critical biasing where precision matching is unnecessary, such as LED drivers or simple switching logic.	Choose only for cost-sensitive, non-precision applications; lacks guaranteed matching and high-temp capability.

Compared with BCM846BSH and MBT3906DW1T1G, BCM856BSHF uniquely combines guaranteed h_FE and V_BE matching, 175 °C operation, and low V_CE(sat), making it irreplaceable in high-accuracy, high-reliability analog signal paths where parameter correlation directly impacts system-level accuracy.

Availability

BCM856BSHF is available at Aetrix Electronics and suitable for current mirror circuits, differential amplifier front-ends, and temperature-stable bias networks requiring stable component supply across automotive under-hood, industrial motor control, and aerospace power conditioning programs.

Supply support for BCM856BSHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, headquartered in Nijmegen, Netherlands.

This device belongs to Nexperia's matched bipolar transistor product line, engineered specifically for precision analog functions where inter-device correlation-rather than standalone performance-is the primary design requirement.

FAQ

What is the maximum continuous collector current per transistor in BCM856BSHF?

The maximum continuous collector current per transistor is −100 mA, specified at T_amb ≤ 25 °C on FR4 PCB with standard footprint. Derating applies above 25 °C per Fig. 1 (375 K/W per-device R_th(j-a)), limiting usable current to −60 mA at 100 °C ambient.

Can BCM856BSHF be used in place of discrete single-transistor packages for matched-pair applications?

Yes - BCM856BSHF replaces two separate SOT23 PNP transistors with guaranteed matching (h_FE ratio 0.95–1.05, V_BE difference ≤2 mV), tighter thermal coupling, and 40% smaller board area than dual-SOT23 layouts, without sacrificing parametric correlation.

Does BCM856BSHF support wave soldering, and what is the recommended footprint?

Yes - it supports both reflow and wave soldering. The wave soldering footprint (Fig. 13) specifies 5.3 mm × 2.5 mm overall land pattern with 0.3 mm solder resist opening width and 1.3 mm transport-direction clearance, optimized for lead-free process compatibility.

Is BCM856BSHF qualified for automotive applications?

No - BCM856BSHF is not AEC-Q101 qualified. It is rated for industrial and extended-temperature operation (−55 °C to +175 °C), but lacks automotive-specific stress testing, failure analysis reporting, and PPAP documentation required for automotive use.

BCM856BSHF Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: 2 PNP (Dual)

Current - Collector (Ic) (Max):: 100mA

Voltage - Collector Emitter Breakdown (Max):: 65V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 5V

Power - Max:: 200mW

Frequency - Transition:: 175MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSSOP

BCM856BSHF FAQ

1.How can I place an order for BCM856BSHF through Aetrix?

Please submit a Request for Quotation (RFQ) for BCM856BSHF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCM856BSHF reliable?

The price and inventory of BCM856BSHF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM856BSHF is usually 5 days.

3.What payment methods are accepted for BCM856BSHF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM856BSHF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCM856BSHF?

BCM856BSHF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCM856BSHF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCM856BSHF?

For technical support, including BCM856BSHF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM856BSHF requirements.

6.How does Aetrix verify that BCM856BSHF is sourced from the original manufacturer or authorized distributors?

All BCM856BSHF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM856BSHF meets industry standards.

7.What is the process for return or replacement of BCM856BSHF?

All BCM856BSHF units undergo pre-shipment inspection (PSI). If there is an issue with BCM856BSHF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCM856BSHF part is unused and in its original packaging.

Return procedure for BCM856BSHF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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