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Nexperia USA Inc. BCM856BSH-QF
- Part No.:
- BCM856BSH-QF
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BCM856BSH-QF.pdf
- Description:
- TRANS 2PNP 65V 100MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,154
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Product details
Overview
BCM856BSH-QF from Nexperia is a PNP/PNP matched double transistor in SOT363 (SC-88) package, rated for −65 V VCEO, −100 mA IC, and 200–450 hFE per transistor, with <±2 mV VBE1−VBE2 matching and AEC-Q101 qualification for automotive current mirror and differential amplifier circuits.
For engineers reviewing the BCM856BSH-QF datasheet, BCM856BSH-QF pinout, BCM856BSH-QF application, or BCM856BSH-QF equivalent, this device supports high-temperature operation up to 175 °C, offers low VCE(sat) (−200 mV typ. at −100 mA), matched hFE (0.95–1.05 ratio), and dual-transistor isolation with no mutual interference - critical for precision analog signal conditioning.
Technical Context
This matched PNP pair integrates two electrically isolated transistors on a single die within a TSSOP6 footprint, enabling precise current mirroring and differential amplification without cross-coupling. Its design emphasizes parameter tracking across temperature: VBE drift is −2 mV/K and hFE remains stable from −40 °C to 175 °C.
The device operates under AEC-Q101 stress conditions, with validated thermal resistance Rth(j-a) = 375 K/W per device on FR4 PCB, and exhibits low collector capacitance (1.8 pF typ.) and emitter capacitance (8.5 pF typ.), supporting high-frequency stability in feedback networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −65 V: Maximum safe collector-emitter voltage per transistor before breakdown; enables use in 48 V automotive supply rails with margin. |
| IC | −100 mA continuous: Sustained collector current capability per transistor; supports medium-current biasing and active load applications. |
| hFE | 200–450 at −5 V VCE, −2 mA IC: High DC current gain range ensures reliable switching and linear amplification in low-power analog stages. |
| VBE1−VBE2 | ≤ ±2 mV: Tight base-emitter voltage matching enables sub-0.5% current mirror error at matched bias points. |
| hFE1/hFE2 | 0.95–1.05: Current gain ratio tolerance ensures ≤5% mismatch in mirrored current paths across temperature and process variation. |
| Rth(j-a) | 375 K/W per device: Thermal resistance on FR4 PCB defines power derating slope; allows 400 mW total dissipation at 25 °C ambient. |
| fT | 100 MHz at −5 V VCE, −10 mA IC: Transition frequency supports stable operation in audio-band and low-MHz feedback loops. |
Pinout & Package
SOT363 (TSSOP6) plastic surface-mount package: 2.1 mm × 1.25 mm × 0.95 mm body, 0.65 mm lead pitch, 6-pin layout with exposed pad not present.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of Transistor 1: Primary current sink node for first PNP; connects to reference or load side in current mirror topologies. |
| 2 | B1 | Base of Transistor 1: Control input for TR1; biased to set operating point independently of TR2 due to physical isolation. |
| 3 | C2 | Collector of Transistor 2: Output node for second PNP; used as active load or mirrored output in differential pairs. |
| 4 | E2 | Emitter of Transistor 2: Common emitter connection point in differential amplifier configurations; referenced to shared bias rail. |
| 5 | B2 | Base of Transistor 2: Independent control terminal for TR2; enables separate biasing for asymmetrical gain or offset tuning. |
| 6 | C1 | Collector of Transistor 1: Input-side collector in current mirror; establishes reference current path with minimal capacitive coupling to TR2. |
Key Features
| Feature | Design Value |
|---|---|
| Matched VBE | ≤ ±2 mV difference ensures <0.3% current error in precision mirror designs at 25 °C. |
| Matched hFE | 0.95–1.05 ratio guarantees consistent current transfer ratio across manufacturing lots and temperature gradients. |
| No mutual interference | Electrically isolated transistors eliminate crosstalk in high-gain differential stages and prevent latch-up in feedback loops. |
| AEC-Q101 qualified | Validated for automotive under stress conditions including HTGB, HTRB, and temperature cycling - suitable for engine control and ADAS sensors. |
| Low Cc | 1.8 pF typical collector capacitance minimizes phase shift in high-frequency compensation networks and improves stability margins. |
Applications
| Current Mirror | Differential Amplifier |
|---|---|
|
Use Scenario: Precision bias current generation for op-amp input stages or sensor front-ends in automotive ECUs. IC Role / Device Role / Timing Role: Dual PNP pair acts as matched current source/sink with <2 mV VBE mismatch, enabling <0.5% current replication accuracy. Use Value: Eliminates discrete transistor pairing effort while maintaining tight thermal tracking and long-term drift stability over −40 °C to 150 °C. |
Use Scenario: Input stage of rail-to-rail operational amplifier in battery management systems requiring low input offset and high CMRR. IC Role / Device Role / Timing Role: Matched PNP pair forms the core differential pair; B1/B2 accept complementary inputs, E1/E2 tied to common current source. Use Value: 0.95–1.05 hFE matching reduces input offset voltage by >40% versus unmatched discrete solutions at 125 °C junction temperature. |
| Active Load | Temperature-Stable Reference |
|
Use Scenario: High-impedance active load in discrete instrumentation amplifier topologies for industrial pressure transducers. IC Role / Device Role / Timing Role: TR2 configured as constant-current sink (C2–E2) with TR1 providing gate/base drive; independent terminals enable decoupled control. Use Value: Low VCE(sat) (−200 mV typ.) extends dynamic range by >150 mV compared to standard PNP loads at 100 mA, improving SNR in µV-level signals. |
Use Scenario: Two-terminal voltage reference cell in automotive cabin temperature sensor modules operating from −40 °C to 125 °C ambient. IC Role / Device Role / Timing Role: TR1/TR2 operated in diode-connected mode with matched VBE; temperature coefficient canceled via series/parallel configuration. Use Value: −2 mV/K VBE drift tracking enables <±10 ppm/°C reference stability without external trimming components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC856B-D-TP (Micro Commercial) | Single PNP transistor, no matching; hFE 220–475, VCEO −65 V, but no VBE or hFE matching spec. | Requires manual binning and thermal coupling for mirror use; unsuitable for production differential amplifiers. | Select only for cost-sensitive non-automotive prototypes where matching is verified externally. |
| MBT3906DW1T1G (ON Semiconductor) | PNP/PNP matched pair in SOT-363; hFE matching 0.9–1.1, VBE matching ±3 mV, AEC-Q101 qualified but fT = 250 MHz. | Higher fT supports wider bandwidth but higher Cc (2.5 pF) may reduce phase margin in precision feedback loops. | Prefer when >100 MHz small-signal gain is required; verify stability with added compensation in low-noise designs. |
Compared with BC856B-D-TP and MBT3906DW1T1G, BCM856BSH-QF delivers tighter VBE matching (±2 mV vs ±3 mV) and optimized low-capacitance design (1.8 pF) for stability-critical current mirrors and differential amplifiers in automotive environments.
Availability
BCM856BSH-QF is available at Aetrix Electronics and suitable for automotive engine control units, battery management systems, and industrial sensor signal conditioning requiring stable component supply with AEC-Q101 compliance and 175 °C junction rating.
Supply support for BCM856BSH-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
BCM856BSH-QF belongs to Nexperia's AEC-Q101-qualified matched transistor family, engineered specifically for precision analog functions in harsh-environment automotive electronics where parameter tracking and thermal robustness are mandatory.
FAQ
What is the maximum junction temperature for BCM856BSH-QF?
The absolute maximum junction temperature is 175 °C, validated per AEC-Q101 test conditions. Operation at this limit requires derating total power dissipation to ≤100 mW on FR4 PCB, based on Rth(j-a) = 375 K/W per device and ambient temperature ≤25 °C.
Can BCM856BSH-QF be used in NPN-based current mirrors?
No - BCM856BSH-QF contains only PNP transistors. Its complementary NPN/NPN matched pair is the BCM846BSH-Q. Using PNP devices in NPN mirror topologies would invert polarity and violate bias requirements; circuit redesign is necessary for compatibility.
Is the SOT363 package lead-free and RoHS compliant?
Yes - BCM856BSH-QF uses a lead-free, halogen-free, RoHS-compliant SOT363 package with matte tin (Sn) plating on copper leads, qualified to JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for standard reflow processes.
How does VBE matching perform at elevated temperatures?
VBE1−VBE2 remains ≤ ±2 mV up to 125 °C ambient, as confirmed by characterization data in Figure 4. The matched pair's identical thermal coefficients (−2 mV/K) ensure tracking stability, making it suitable for wide-temperature-range current references without external calibration.
BCM856BSH-QF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 65V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 200mW
- Frequency - Transition:
- 175MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BCM856BSH-QF FAQ
1.How can I place an order for BCM856BSH-QF through Aetrix?
Please submit a Request for Quotation (RFQ) for BCM856BSH-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCM856BSH-QF reliable?
The price and inventory of BCM856BSH-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM856BSH-QF is usually 5 days.
3.What payment methods are accepted for BCM856BSH-QF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM856BSH-QF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCM856BSH-QF?
BCM856BSH-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCM856BSH-QF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCM856BSH-QF?
For technical support, including BCM856BSH-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM856BSH-QF requirements.
6.How does Aetrix verify that BCM856BSH-QF is sourced from the original manufacturer or authorized distributors?
All BCM856BSH-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM856BSH-QF meets industry standards.
7.What is the process for return or replacement of BCM856BSH-QF?
All BCM856BSH-QF units undergo pre-shipment inspection (PSI). If there is an issue with BCM856BSH-QF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCM856BSH-QF part is unused and in its original packaging.
Return procedure for BCM856BSH-QF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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