Infineon Technologies BCM856SH6778XTSA1

Overview

BCM856SH6778XTSA1 from Nexperia is a PNP silicon dual transistor array in SOT363 package, configured as two galvanically isolated PNP transistors with precision current matching (∆IC ≤ ±10% at IB = 1 µA, VCE = 1.0 V). It supports current mirror circuits with VCEO = 65 V, IC = 100 mA per transistor, and low VCEsat = 90 mV (IC = 10 mA, IB = 0.5 mA). Used in automotive sensor signal conditioning and precision bias networks.

For engineers reviewing the BCM856SH6778XTSA1 datasheet, BCM856SH6778XTSA1 pinout, BCM856SH6778XTSA1 application, or BCM856SH6778XTSA1 equivalent, key selection criteria include matched hFE tracking across temperature, AEC-Q101 qualification for automotive use, dual-isolation layout for noise-sensitive analog feedback paths, and SOT363 thermal resistance (RthJS = 140 K/W) for compact PCB designs.

Technical Context

This dual PNP transistor array implements two independent, electrically isolated PNP BJTs on a single die-enabling precise current mirroring without shared substrate coupling. Its matching specification (∆IC ≤ ±10%) is guaranteed under identical bias conditions (IB = 1 µA, VCE = 1.0 V), supporting high-accuracy analog current transfer in feedback loops.

The device operates with VCEO = 65 V and VCES = 80 V, allowing use in medium-voltage bias rails up to 65 V. With hFE ranging from 200–450 (IC = 2 mA, VCE = 5 V) and fT = 250 MHz, it supports both DC precision and moderate-frequency analog signal paths in sensor front-ends and voltage reference circuits.

Key Specifications

Pinout & Package

SOT363 (SC-88) 6-pin plastic package with exposed thermal pad; dimensions 2.1 mm × 1.25 mm × 0.9 mm; moisture sensitivity level MSL3; RoHS-compliant, halogen-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP dual transistor array applications.

Compared with BCM856SH6778XTSA1, BCM846S enables complementary NPN mirroring in identical layouts, while BC856S sacrifices matching and integration for lower cost in non-critical bias roles-making BCM856S the sole choice for precision dual-PNP current transfer.

Availability

BCM856SH6778XTSA1 is available at Aetrix Electronics and suitable for automotive sensor modules, industrial current reference designs, medical front-end circuits, and smart meter bias networks requiring stable component supply and AEC-Q101 assurance.

Supply support for BCM856SH6778XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and efficient manufacturing.

This part belongs to Nexperia's AEC-Q101-qualified bipolar transistor portfolio, engineered specifically for precision analog functions in harsh-environment applications such as automotive cabin electronics and industrial metrology.

FAQ

What is the maximum allowable junction temperature for BCM856SH6778XTSA1?

The absolute maximum junction temperature is 150°C, validated per AEC-Q101 stress testing. Operation above this threshold risks permanent degradation of hFE matching and increased leakage. Derating is required above TS = 115°C, where total power dissipation drops linearly to zero at 150°C junction temperature.

Can BCM856SH6778XTSA1 be used in a cascode configuration?

No-its SOT363 package lacks dedicated cascode pins, and the internal structure provides only two isolated PNP transistors without shared collector/emitter interconnects. Cascode operation requires controlled voltage bias between base and collector of stacked devices, which this dual array does not support.

Is the pin 1 marking visible on the top-side silkscreen?

Yes-pin 1 is marked with a laser-etched dot or notch adjacent to lead 1 (E1) on the top surface of the SOT363 package, per JEDEC MO-203-1 standards. The marking is located within 0.2 mm of the corner and remains visible after reflow soldering.

Does BCM856SH6778XTSA1 support pulsed operation beyond its DC ratings?

Yes-peak collector current reaches 200 mA for pulses ≤10 ms (duty cycle ≤2%), enabled by thermal inertia of the SOT363 die. Pulse operation must respect RthJS = 140 K/W and maintain average power below 250 mW to avoid junction overheating.