Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BCM857BS,115

Part No.:
BCM857BS,115
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixBCM857BS,115.pdf
Description:
TRANS 2PNP 45V 100MA 6-TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,891

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BCM857BS from Nexperia is a PNP/PNP matched double transistor in SOT363-3 (SC-88) package, designed for precision analog functions requiring tight current gain and base-emitter voltage matching between two fully isolated transistors. It delivers hFE matching ratio ≥0.9, VBE mismatch ≤2 mV at IC = −2 mA, and supports −45 V VCEO per transistor - used in high-stability current mirrors and differential amplifiers in automotive sensor signal conditioning.

For engineers reviewing the BCM857BS datasheet, BCM857BS pinout, BCM857BS application, or BCM857BS equivalent, this device is selected when dual-transistor matching, AEC-Q101 qualification, low thermal resistance (416 K/W per device), and compact TSSOP6 footprint are required for analog front-end design in automotive and industrial systems.

Technical Context

The BCM857BS integrates two electrically isolated PNP transistors on a single die with monolithic matching-ensuring identical process variation effects across both devices. Its hFE matching (hFE1/hFE2 ≥ 0.9) and VBE matching (ΔVBE ≤ 2 mV) are guaranteed under VCE = −5 V, IC = −2 mA, Tamb = 25 °C conditions.

Thermal performance is specified for FR4 PCB mounting: total power dissipation reaches 300 mW per device, with junction-to-ambient thermal resistance of 416 K/W. The device operates across −65 °C to +150 °C ambient and junction temperatures, meeting AEC-Q101 stress test requirements for automotive discrete semiconductors.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −45 V per transistor: supports rail-to-rail operation in negative-supply analog stages up to −45 V collector swing.
hFE Matching ≥0.9 (hFE1/hFE2): ensures <11% current gain deviation between transistors - critical for mirror accuracy.
VBE Mismatch ≤2 mV at −2 mA: enables sub-0.1% input offset contribution in differential pair configurations.
Ptot (per device) 300 mW on FR4 PCB: allows sustained dual-transistor biasing at ~100 mA total collector current without derating.
fT 100–175 MHz at −10 mA: supports high-frequency current mirroring and broadband amplifier compensation up to ~100 MHz.
Rth(j-a) 416 K/W per device: enables stable thermal operation in compact automotive ECUs without forced airflow.
AEC-Q101 Qualified: certified for automotive use including temperature cycling, HTRB, and ESD testing per AEC standard.

Pinout & Package

SOT363-3 (TSSOP6) plastic surface-mounted package: 2.2 mm × 1.35 mm × 0.95 mm body, 0.65 mm pitch, gull-wing leads, tape-and-reel packaging. Designed for reflow soldering per JEDEC J-STD-020.

Pin/Terminal Circuit Role Design Meaning
1 E1 Emitter of Transistor 1 - connected to reference node in current mirror or differential pair tail.
2 B1 Base of Transistor 1 - controls current flow in TR1; tied to TR2 base for matched biasing.
3 C2 Collector of Transistor 2 - output node in current mirror or active load in differential amplifier.
4 E2 Emitter of Transistor 2 - common emitter connection point for differential pair configuration.
5 B2 Base of Transistor 2 - matched to B1 for symmetrical DC operating point setting.
6 C1 Collector of Transistor 1 - input reference node in current mirror or input side of differential pair.

Key Features

Feature Design Value
Monolithic hFE matching hFE1/hFE2 ≥ 0.9 ensures predictable current ratio in mirror circuits without external trimming.
Base-emitter voltage tracking ΔVBE ≤ 2 mV minimizes input offset drift in precision differential amplifiers over temperature.
AEC-Q101 qualification Validated for automotive underhood applications including temperature cycling and HTRB stress tests.
Low thermal resistance 416 K/W per device enables reliable dual-transistor operation at 150 °C junction temperature.
Compact TSSOP6 footprint 2.2 mm × 1.35 mm area saves PCB space vs. discrete dual-SOT23 solutions while maintaining isolation.

Applications

Current Mirror Differential Amplifier

Use Scenario: Precision bias current generation for op-amp input stages in automotive battery management ICs.

IC Role / Device Role / Timing Role: Dual-transistor current mirror providing matched reference current with <0.5% error over −40 °C to +125 °C.

Use Value: Eliminates need for external laser-trimmed resistors; reduces BOM count and improves long-term stability.

Use Scenario: Input stage of a rail-to-rail operational amplifier used in engine control unit (ECU) sensor signal conditioning.

IC Role / Device Role / Timing Role: Matched PNP pair forming the core differential input stage with common-emitter configuration.

Use Value: Achieves <10 µV input offset due to ≤2 mV VBE mismatch, enabling accurate measurement of millivolt-level thermocouple signals.

Automotive Sensor Interface Industrial Current Sensing

Use Scenario: Signal conditioning for Hall-effect position sensors in electric power steering (EPS) modules.

IC Role / Device Role / Timing Role: Dual-transistor active load and current source in chopper-stabilized amplifier front-end.

Use Value: Monolithic matching ensures consistent gain and offset cancellation across production lots and temperature cycles.

Use Scenario: High-side current sensing in programmable logic controller (PLC) analog input modules.

IC Role / Device Role / Timing Role: Matched PNP pair implementing Kelvin-connected current mirror for isolated shunt monitoring.

Use Value: Enables ±0.2% full-scale accuracy over 0–85 °C ambient without calibration, reducing factory test time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar matched PNP transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC847BS PNP/NPN complementary pair, not matched; hFE range 110–800, no VBE matching spec. Suitable for general-purpose switching, not precision analog matching. Select only if dual-polarity biasing needed and matching is unnecessary.
MBT3906DW1T1G PNP/PNP pair in SOT-363, but no hFE or VBE matching guarantee; AEC-Q101 qualified. Acceptable for non-critical current sources where ±20% gain variation is tolerable. Choose when cost sensitivity outweighs matching requirement and automotive qualification is mandatory.

Compared with BC847BS and MBT3906DW1T1G, the BCM857BS uniquely provides guaranteed hFE ratio ≥0.9 and ΔVBE ≤2 mV - making it the only option among the three for applications demanding sub-1% current mirror accuracy or <10 µV differential amplifier offset.

Availability

BCM857BS is available at Aetrix Electronics and suitable for automotive sensor interfaces, precision current mirrors, differential amplifiers, and industrial analog front-ends requiring stable component supply with AEC-Q101 compliance and traceable sourcing.

Supply support for BCM857BS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient solutions.

The BCM857BS belongs to Nexperia's AEC-Q101-qualified matched transistor product line, engineered specifically for precision analog functions in automotive and industrial systems where parameter matching and thermal stability are critical.

FAQ

What is the maximum continuous collector current per transistor in the BCM857BS?

The BCM857BS supports −100 mA continuous collector current per transistor under normal operating conditions, with peak capability up to −200 mA for pulses ≤1 ms. This rating assumes operation within the absolute maximum limits and proper PCB thermal management per the datasheet's FR4 mounting specification.

Is BCM857BS pin-compatible with other SOT363 dual transistors like BC847BS?

No - BCM857BS has unique pin assignment: Pin 1=E1, Pin 2=B1, Pin 3=C2, Pin 4=E2, Pin 5=B2, Pin 6=C1. BC847BS uses Pin 1=E1, Pin 2=B1, Pin 3=C1, Pin 4=E2, Pin 5=B2, Pin 6=C2. Swapping them causes incorrect circuit connections and functional failure.

Does the BCM857BS require external biasing components for current mirror operation?

No - the matched characteristics enable direct implementation of a two-transistor current mirror using only the BCM857BS and a single resistor to set the reference current. No trimming resistors, feedback networks, or calibration are needed to achieve <1% current ratio error across temperature.

How does the thermal resistance of BCM857BS compare between per-transistor and per-device ratings?

The datasheet specifies Rth(j-a) = 625 K/W per transistor and 416 K/W per device. The lower per-device value reflects shared thermal path benefits when both transistors operate simultaneously on the same die - critical for accurate junction temperature estimation in dual-bias applications.

BCM857BS,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 PNP (Dual) Matched Pair
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
45V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Power - Max:
300mW
Frequency - Transition:
175MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

BCM857BS,115 FAQ

1.How can I place an order for BCM857BS,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCM857BS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCM857BS,115 reliable?

The price and inventory of BCM857BS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM857BS,115 is usually 5 days.

3.What payment methods are accepted for BCM857BS,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM857BS,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCM857BS,115?

BCM857BS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCM857BS,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCM857BS,115?

For technical support, including BCM857BS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM857BS,115 requirements.

6.How does Aetrix verify that BCM857BS,115 is sourced from the original manufacturer or authorized distributors?

All BCM857BS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM857BS,115 meets industry standards.

7.What is the process for return or replacement of BCM857BS,115?

All BCM857BS,115 units undergo pre-shipment inspection (PSI). If there is an issue with BCM857BS,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCM857BS,115 part is unused and in its original packaging.

Return procedure for BCM857BS,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BCM857BS,115 Tags

  • BCM857BS,115
  • BCM857BS,115 PDF
  • BCM857BS,115 Datasheet
  • BCM857BS,115 Specifications
  • BCM857BS,115 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BCM857BS,115
  • Buy BCM857BS,115
  • BCM857BS,115 Price
  • BCM857BS,115 Distributor
  • BCM857BS,115 Supplier
  • BCM857BS,115 Wholesale
Related Products
MBT3946DW1T1G
MBT3946DW1T1G

onsemi

BC846BPDW1T1G
BC846BPDW1T1G

onsemi

MBT2222ADW1T1G
MBT2222ADW1T1G

onsemi

BC847BDW1T1G
BC847BDW1T1G

onsemi

DMMT5401-7-F
DMMT5401-7-F

Diodes Incorporated

DMMT5551-7-F
DMMT5551-7-F

Diodes Incorporated

DMMT3904W-7-F
DMMT3904W-7-F

Diodes Incorporated

DMMT3906W-7-F
DMMT3906W-7-F

Diodes Incorporated

FMB3904
FMB3904

onsemi

FMB2222A
FMB2222A

onsemi

ULQ2003D1013TR
ULQ2003D1013TR

STMicroelectronics

ZXTD4591E6TA
ZXTD4591E6TA

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER