Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BCM857BS,135

Part No.:
BCM857BS,135
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixBCM857BS,135.pdf
Description:
TRANS 2PNP 45V 100MA 6-TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:167,669

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BCM857BS from Nexperia is a PNP/PNP matched double transistor in SOT363-3 (TSSOP6) package, designed for precision analog functions requiring tight parameter matching between two fully isolated transistors. It delivers hFE matching ratio ≥0.9, VBE mismatch ≤2 mV at −5 V VCE, −2 mA IC, 25 °C, and supports −45 V VCEO, −100 mA IC per transistor - enabling high-accuracy current mirroring in automotive sensor signal conditioning.

For engineers reviewing the BCM857BS datasheet, BCM857BS pinout, BCM857BS application, or BCM857BS equivalent, this device is selected for differential amplifier front-ends, precision bias generation, and AEC-Q101-compliant current mirror topologies where transistor pair matching directly impacts gain stability and offset error.

Technical Context

This dual PNP transistor integrates two electrically isolated silicon epitaxial planar devices on a single die with tightly controlled process variation to ensure consistent DC current gain and base-emitter voltage across temperature. Matching is specified at −2 mA collector current and −5 V collector-emitter voltage, with hFE1/hFE2 ≥ 0.9 and |VBE1 − VBE2| ≤ 2 mV.

The device operates within −65 °C to +150 °C ambient range, supports 200 mW total power dissipation (per device), and exhibits fT = 100–175 MHz at −10 mA IC, making it suitable for low-noise, medium-frequency analog signal paths in automotive ECUs and industrial instrumentation.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −45 V per transistor: enables safe operation in 36 V automotive supply rails with margin against transients.
IC −100 mA per transistor: supports moderate-current biasing and active load applications without thermal runaway.
hFE (Typ) 290 at −5 V VCE, −2 mA IC: ensures predictable DC gain in feedback loops and mirror configurations.
hFE1/hFE2 ≥0.9: guarantees ≤10% current gain mismatch between transistors, critical for common-mode rejection in diff-amps.
VBE1−VBE2 ≤2 mV: limits input offset voltage drift in precision current mirrors and emitter-coupled pairs.
fT 100–175 MHz: supports stable operation up to ~10 MHz small-signal amplification with minimal phase shift.
Rth(j-a) 416 K/W per device: defines thermal derating curve when mounted on FR4 PCB with standard footprint.

Pinout & Package

SOT363-3 (TSSOP6) plastic surface-mounted package, 1.35 mm × 2.2 mm footprint, 0.65 mm pitch, 1.1 mm max height, transparent top view with pin 1 index marker.

Pin/Terminal Circuit Role Design Meaning
1 Emitter TR1 Primary emitter terminal of first transistor; connects to current sink node in mirror or diff-amp tail.
2 Base TR1 Control input for TR1; referenced to E1 for VBE-based biasing and matching validation.
3 Collector TR2 Output node of second transistor; used as active load or mirrored output in current mirror topology.
4 Emitter TR2 Emitter of second transistor; tied to common reference (e.g., ground or negative rail) in differential pair.
5 Base TR2 Input control for TR2; matched to B1 to preserve symmetry in differential or mirror circuits.
6 Collector TR1 Output node of first transistor; serves as input reference or bias current source in mirror configuration.

Key Features

Feature Design Value
Current gain matching hFE1/hFE2 ≥ 0.9 ensures ≤10% gain deviation between transistors, reducing common-mode error in precision analog blocks.
Base-emitter voltage matching |VBE1 − VBE2| ≤ 2 mV minimizes input offset in differential amplifiers and improves mirror accuracy over temperature.
AEC-Q101 qualification Qualified for automotive under stress test standard Q101, supporting use in engine control, ADAS sensors, and body electronics.
Thermal performance 416 K/W junction-to-ambient resistance enables stable operation up to 150 °C junction temperature on standard FR4 PCBs.

Applications

Current Mirror Differential Amplifier

Use Scenario: Precision current replication in sensor front-end biasing for automotive pressure or temperature transducers.

IC Role / Device Role / Timing Role: Dual PNP pair acts as matched active load and reference leg to maintain constant current ratio independent of supply variation.

Use Value: ≤2 mV VBE mismatch ensures <10 µA current error at 1 mA reference, improving ADC linearity in closed-loop systems.

Use Scenario: Input stage of automotive cabin air quality monitor amplifier processing low-level NDIR sensor signals.

IC Role / Device Role / Timing Role: Matched PNP pair forms emitter-coupled differential pair with shared emitter resistor for high CMRR.

Use Value: hFE matching ≥0.9 sustains >60 dB common-mode rejection at 1 kHz, suppressing power rail noise coupling.

Automotive Sensor Bias Industrial Current Reference

Use Scenario: Stable bias generation for Hall-effect wheel speed sensors operating across −40 °C to +125 °C ambient.

IC Role / Device Role / Timing Role: Dual transistor provides temperature-compensated current source via VBE tracking between matched units.

Use Value: Matched VBE drift (≈−2 mV/K) cancels thermal coefficient, holding reference current within ±1.5% over full range.

Use Scenario: Fixed current source in programmable logic controller (PLC) analog output module for 4–20 mA loop calibration.

IC Role / Device Role / Timing Role: One transistor sets reference current; second provides matched mirror output for feedback and scaling.

Use Value: 0.9 hFE ratio enables <0.5% full-scale error in 12-bit DAC-driven current loops without trimming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar matched PNP transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC847BS PNP/NPN complementary pair, not matched; hFE tolerance ±30%, no VBE matching spec. Not suitable for current mirror or diff-amp requiring matched parameters; usable only for discrete switching. Select only if circuit does not require transistor pairing - e.g., dual independent switches with no gain/offset correlation.
MBT3906DW1T1G PNP/PNP dual but unqualified to AEC-Q101; hFE matching not specified; VBE mismatch >5 mV typical. Limited to industrial/commercial grade designs; lacks automotive reliability validation and matching assurance. Acceptable for cost-sensitive non-automotive instrumentation where ±5 mV VBE error is tolerable.

Compared with BC847BS and MBT3906DW1T1G, BCM857BS uniquely delivers AEC-Q101 qualification plus guaranteed hFE and VBE matching - essential for automotive current mirrors and differential amplifiers where parameter correlation directly determines system accuracy and safety compliance.

Availability

BCM857BS is available at Aetrix Electronics and suitable for automotive sensor signal conditioning, industrial current reference design, and precision differential amplifier development requiring stable component supply and long-term lifecycle support.

Supply support for BCM857BS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in automotive-qualified parts and advanced packaging.

BCM857BS belongs to Nexperia's AEC-Q101-qualified matched transistor product line, engineered specifically for precision analog functions in automotive and industrial environments where parameter correlation and thermal stability are critical.

FAQ

Is BCM857BS pin-compatible with BC847BS?

No. BCM857BS uses SOT363-3 (TSSOP6) with 6 pins arranged as E1-B1-C2-E2-B2-C1, while BC847BS is in SOT363 (non-3 variant) with different internal connectivity and pin mapping. Physical fit does not guarantee functional compatibility due to differing transistor types and matching architecture.

What is the maximum continuous collector current per transistor?

The absolute maximum continuous collector current per transistor is −100 mA at Tamb ≤ 25 °C, derated linearly above that temperature per the Rth(j-a) = 625 K/W specification. At 85 °C ambient, maximum IC drops to approximately −65 mA to maintain Tj ≤ 150 °C.

Does BCM857BS support reflow soldering?

Yes. BCM857BS is qualified for lead-free reflow soldering per JEDEC J-STD-020, with peak temperature up to 260 °C. The recommended footprint matches Figure 14 in the datasheet: 0.5 mm pad width, 0.6 mm length, 2.35 mm × 2.65 mm overall land pattern with solder mask defined pads.

How is hFE matching measured and guaranteed?

hFE matching is measured per transistor at VCE = −5 V, IC = −2 mA, Tamb = 25 °C; the ratio hFE1/hFE2 is calculated using the smaller value as numerator. This is tested and binned during final test, with minimum ratio guaranteed at 0.9 across all production lots.

BCM857BS,135 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 PNP (Dual) Matched Pair
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
45V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Power - Max:
300mW
Frequency - Transition:
175MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

BCM857BS,135 FAQ

1.How can I place an order for BCM857BS,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCM857BS,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCM857BS,135 reliable?

The price and inventory of BCM857BS,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM857BS,135 is usually 5 days.

3.What payment methods are accepted for BCM857BS,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM857BS,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCM857BS,135?

BCM857BS,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCM857BS,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCM857BS,135?

For technical support, including BCM857BS,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM857BS,135 requirements.

6.How does Aetrix verify that BCM857BS,135 is sourced from the original manufacturer or authorized distributors?

All BCM857BS,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM857BS,135 meets industry standards.

7.What is the process for return or replacement of BCM857BS,135?

All BCM857BS,135 units undergo pre-shipment inspection (PSI). If there is an issue with BCM857BS,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCM857BS,135 part is unused and in its original packaging.

Return procedure for BCM857BS,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BCM857BS,135 Tags

  • BCM857BS,135
  • BCM857BS,135 PDF
  • BCM857BS,135 Datasheet
  • BCM857BS,135 Specifications
  • BCM857BS,135 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BCM857BS,135
  • Buy BCM857BS,135
  • BCM857BS,135 Price
  • BCM857BS,135 Distributor
  • BCM857BS,135 Supplier
  • BCM857BS,135 Wholesale
Related Products
MBT3946DW1T1G
MBT3946DW1T1G

onsemi

BC846BPDW1T1G
BC846BPDW1T1G

onsemi

MBT2222ADW1T1G
MBT2222ADW1T1G

onsemi

BC847BDW1T1G
BC847BDW1T1G

onsemi

DMMT5401-7-F
DMMT5401-7-F

Diodes Incorporated

DMMT5551-7-F
DMMT5551-7-F

Diodes Incorporated

DMMT3904W-7-F
DMMT3904W-7-F

Diodes Incorporated

DMMT3906W-7-F
DMMT3906W-7-F

Diodes Incorporated

FMB3904
FMB3904

onsemi

FMB2222A
FMB2222A

onsemi

ULQ2003D1013TR
ULQ2003D1013TR

STMicroelectronics

ZXTD4591E6TA
ZXTD4591E6TA

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER