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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Diodes Incorporated BCM857BS-7-F

Name: BCM857BS-7-F
Brand: Diodes Incorporated
SKU: BCM857BS-7-F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCM857BS-7-F

Manufacturer:: Diodes Incorporated

Category:: Bipolar Transistor Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: BCM857BS-7-F.pdf

Description:: TRANS 2PNP 45V 100MA SOT-363

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BCM857BS-7-F from Diodes Incorporated is a matched dual PNP bipolar junction transistor pair in SOT363 package, rated for −45 V V_CEO, −100 mA I_C, and featuring 2 mV V_BE matching and 10% h_FE matching across the pair. It operates from −65 °C to +150 °C and delivers 100 MHz f_T, suited for precision current mirror and differential amplifier circuits in automotive sensor signal conditioning.

For engineers reviewing the BCM857BS-7-F datasheet, BCM857BS-7-F pinout, BCM857BS-7-F application, or BCM857BS-7-F equivalent, key selection criteria include matched V_BE tolerance, h_FE tracking under bias, thermal resistance (625 °C/W), and AEC-Q101 readiness for automotive-grade analog front-ends.

Technical Context

This device integrates two adjacent-die PNP transistors on a single silicon substrate to ensure intrinsic matching-critical for high-accuracy analog functions where offset voltage and gain drift must be minimized. Its matched V_BE (≤2 mV) and h_FE ratio (0.9–1.0) are measured at V_CE = −5 V, I_C = −2 mA, enabling stable operation in current-source and active-load configurations.

The SOT363 package provides fully isolated terminals with matte tin finish, supporting reflow soldering per MIL-STD-202 Method 208. With R_θJA = 625 °C/W on standard FR4 and 200 mW total power dissipation, thermal performance is optimized for compact, high-density PCB layouts without forced airflow.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V - maximum safe collector-emitter voltage before breakdown in common-emitter configuration
I_C	−100 mA - continuous DC collector current rating per transistor, defining linear operating range
h_FE Matching	0.9–1.0 ratio - ensures ≤10% current gain mismatch between transistors under identical bias conditions
V_BE Matching	≤2 mV difference - enables sub-millivolt input offset in differential pairs and current mirrors
f_T	100 MHz - usable bandwidth limit for small-signal amplification at I_C = −10 mA, V_CE = −5 V
R_θJA	625 °C/W - junction-to-ambient thermal resistance on minimal 1 oz copper pad, critical for derating at elevated ambient temperatures
P_D	200 mW - total device power dissipation limit at T_A = +25 °C, defining safe DC bias envelope

Pinout & Package

Package: SOT363 - 6-pin, surface-mount, molded plastic package with matte tin terminals; UL 94V-0 rated, moisture sensitivity level 1 per J-STD-020, weight ≈ 0.006 g.

Pin/Terminal	Circuit Role	Design Meaning
B1	Base of Transistor 1	Control terminal for first PNP; requires negative bias relative to emitter to enable conduction
E1	Emitter of Transistor 1	Current source node for Transistor 1; typically tied to higher potential in PNP applications
C1	Collector of Transistor 1	Output/current sink node for Transistor 1; connected to load or next stage
B2	Base of Transistor 2	Independent control terminal for second matched PNP; enables dual-bias or differential drive
E2	Emitter of Transistor 2	Isolated emitter node for Transistor 2; supports separate biasing or shared rail with guard traces
C2	Collector of Transistor 2	Second independent output node; allows parallel, cascode, or complementary pair implementation

Key Features

Feature	Design Value
Intrinsic die-matching	Adjacent-die fabrication ensures correlated process variation, delivering guaranteed V_BE and h_FE tracking without post-sorting
V_BE matching tolerance	≤2 mV at V_CE = −5 V, I_C = −2 mA - directly reduces input offset in precision current mirrors
h_FE matching ratio	0.9–1.0 - maintains consistent current division across transistors in active-load or gain-setting roles
Thermal isolation	Internally isolated structure minimizes thermal crosstalk between transistors, preserving matching under dynamic load conditions

Applications

Automotive Cabin Temperature Sensor Front-End

Industrial Current-Source Reference

Use Scenario: Amplifying low-level thermistor bridge outputs in HVAC control modules under wide temperature ranges (−40 °C to +125 °C).

IC Role / Device Role / Timing Role: Dual PNP pair configured as matched current mirror and active load for op-amp input stage.

Use Value: 2 mV V_BE match limits zero-point drift to <±0.5 °C over full temperature range without calibration.

Use Scenario: Generating stable 100 µA reference current for 16-bit DAC biasing in programmable logic controllers.

IC Role / Device Role / Timing Role: Precision current mirror with 10% h_FE tracking to replicate reference current across multiple channels.

Use Value: Matched h_FE ensures <0.1% channel-to-channel current error at 25 °C, meeting INL requirements.

Medical ECG Signal Conditioning

Test Equipment Differential Amplifier

Use Scenario: Front-end instrumentation amplifier input stage for biopotential acquisition with ultra-low input bias current.

IC Role / Device Role / Timing Role: Matched PNP pair used in Wilson central terminal circuit to balance electrode impedance paths.

Use Value: ≤2 mV V_BE mismatch suppresses common-mode error below 10 µV, improving CMRR by >15 dB.

Use Scenario: High-stability differential pair in benchtop multimeter input buffer operating at 23 °C ±1 °C.

IC Role / Device Role / Timing Role: Dual PNP configured as emitter-coupled pair with shared emitter resistor for gain stability.

Use Value: Adjacent-die matching maintains <0.05% gain drift over 8-hour calibration window.

Equivalent & Alternatives

The following parts are listed as comparable options for similar matched PNP transistor pair applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847BS-7-F	NPN matched pair; V_CEO = +45 V, h_FE match = 10%, V_BE match = 2 mV	Requires inverted supply topology; unsuitable for high-side current sources or PNP-specific bias networks	Select when NPN polarity aligns with existing schematic and layout constraints
MBT3906DW1T1G	Matched PNP pair; V_CEO = −40 V, h_FE match = 15%, V_BE match = 3 mV, SOT-363 package	Lower voltage rating and looser matching reduce accuracy in high-voltage or precision current mirror use cases	Acceptable for cost-sensitive industrial controls where ±1.5 °C sensor drift is tolerable

Compared with BC847BS-7-F and MBT3906DW1T1G, BCM857BS-7-F offers superior V_CEO margin (−45 V vs. −40 V/−45 V NPN), tighter V_BE matching (2 mV vs. 2 mV/3 mV), and intrinsic die-matching-making it optimal for automotive and medical applications demanding long-term offset stability.

Availability

BCM857BS-7-F is available at Aetrix Electronics and suitable for automotive cabin sensors, industrial current-reference circuits, medical ECG front-ends, and test equipment differential amplifiers requiring stable component supply with traceable sourcing and lifecycle continuity.

Supply support for BCM857BS-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BCM857BS belongs to Diodes' precision bipolar transistor family, engineered specifically for high-matching analog signal chains in automotive, industrial, and medical systems where offset voltage and gain tracking are critical.

FAQ

What is the maximum allowable collector-emitter voltage for BCM857BS-7-F?

The absolute maximum V_CEO is −45 V at T_A = +25 °C. Operation beyond this rating risks irreversible breakdown. Derating is required above +25 °C per the datasheet's thermal curves; at +100 °C ambient, maximum safe V_CEO drops to approximately −38 V due to junction temperature rise.

Does BCM857BS-7-F meet AEC-Q101 qualification requirements?

BCM857BS-7-F is designed and manufactured in IATF 16949-certified facilities and supports PPAP documentation. While not pre-qualified as a standard part, Diodes offers AEC-Q101 qualification upon request for automotive programs-contact Diodes' automotive team with specific stress test and reliability requirements.

How is the 2 mV V_BE matching measured and guaranteed?

V_BE matching is measured differentially between the two transistors at V_CE = −5 V and I_C = −2 mA, with the smaller V_BE subtracted from the larger. This specification is guaranteed by adjacent-die wafer processing and 100% final test screening-not statistical binning-ensuring every unit meets ≤2 mV across its qualified operating range.

Can BCM857BS-7-F be used in a common-base configuration?

Yes-each transistor supports common-base operation with V_CB up to −50 V (BVCBO) and f_T = 100 MHz. The matched pair enables balanced high-frequency current buffers; however, thermal coupling effects must be considered since both devices share the same die substrate, potentially affecting phase matching above 10 MHz.

BCM857BS-7-F Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 PNP (Dual)

Current - Collector (Ic) (Max):: 100mA

Voltage - Collector Emitter Breakdown (Max):: 45V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 220 @ 2mA, 5V

Power - Max:: 200mW

Frequency - Transition:: 100MHz

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-363

BCM857BS-7-F FAQ

1.How can I place an order for BCM857BS-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for BCM857BS-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCM857BS-7-F reliable?

The price and inventory of BCM857BS-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM857BS-7-F is usually 5 days.

3.What payment methods are accepted for BCM857BS-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM857BS-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCM857BS-7-F?

BCM857BS-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCM857BS-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCM857BS-7-F?

For technical support, including BCM857BS-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM857BS-7-F requirements.

6.How does Aetrix verify that BCM857BS-7-F is sourced from the original manufacturer or authorized distributors?

All BCM857BS-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM857BS-7-F meets industry standards.

7.What is the process for return or replacement of BCM857BS-7-F?

All BCM857BS-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BCM857BS-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCM857BS-7-F part is unused and in its original packaging.

Return procedure for BCM857BS-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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