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Nexperia USA Inc. BCM857BSHF
- Part No.:
- BCM857BSHF
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BCM857BSHF.pdf
- Description:
- TRANS 2PNP 45V 100MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,404
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Product details
Overview
BCM857BSHF from Nexperia is a PNP/PNP matched double transistor in SOT363 (SC-88) package, designed for precision analog functions requiring tight parameter matching between two transistors. It delivers VCEO = −45 V, IC = −100 mA per transistor, hFE matching ratio of 0.95–1.05, and VBE matching ≤ 2 mV at −2 mA, enabling high-accuracy current mirroring and differential amplification in compact industrial and automotive-qualified signal conditioning circuits.
For engineers reviewing the BCM857BSHF datasheet, BCM857BSHF pinout, BCM857BSHF application, or BCM857BSHF equivalent, this device is selected for its verified current gain and base-emitter voltage matching, low collector capacitance (1.8 pF), high-temperature operation up to 175 °C, and drop-in compatibility with legacy dual-transistor footprints in precision biasing and feedback networks.
Technical Context
This matched pair integrates two electrically isolated PNP transistors on a single die within a thermally symmetric SOT363 package, ensuring consistent thermal tracking and minimal inter-transistor crosstalk. Its design supports simultaneous operation under identical bias conditions, critical for maintaining matching accuracy across temperature and current ranges.
The device exhibits low VCE(sat) (−200 mV typ. at −100 mA/−5 mA drive) and low Cc (1.8 pF), enabling fast switching and stable small-signal gain in high-frequency analog stages. Matching specifications are guaranteed at VCE = −5 V, IC = −2 mA, Tamb = 25 °C - conditions aligned with standard precision amplifier biasing practices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −45 V: Maximum safe collector-emitter voltage per transistor before breakdown; defines usable dynamic range in high-side current sensing or active load applications. |
| IC | −100 mA: Continuous collector current rating per transistor; supports moderate-power analog output stages and precision current sources. |
| hFE matching | 0.95–1.05: Ratio of DC current gains between TR1 and TR2; ensures ≤5% gain mismatch in current mirrors, reducing error in feedback loops and differential pairs. |
| VBE matching | ≤2 mV: Maximum absolute difference in base-emitter voltage at −2 mA; enables sub-0.1% offset in matched-pair bias networks and high-CMRR instrumentation front-ends. |
| Cc | 1.8 pF typ.: Collector-base capacitance at −10 V; minimizes Miller effect and phase shift in broadband amplifier compensation networks. |
| Tj(max) | 175 °C: Maximum junction temperature; allows reliable operation in under-hood automotive modules and industrial motor control PCBs without derating. |
| Ptot (per device) | 400 mW at Tamb ≤ 25 °C: Total power dissipation capability for both transistors; supports dual-bias operation with adequate thermal margin on FR4 PCBs. |
Pinout & Package
SOT363 (TSSOP6) plastic surface-mount package: 2.1 mm × 1.25 mm × 0.95 mm body, 0.65 mm lead pitch, 6-pin layout with exposed pad-compatible footprint per Fig. 12 (reflow) and Fig. 13 (wave).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of Transistor 1: Primary current sink node for TR1; connected to reference or load return path in mirror configurations. |
| 2 | B1 | Base of Transistor 1: Control input for TR1; requires precise bias current to maintain matching with TR2 under thermal drift. |
| 3 | C2 | Collector of Transistor 2: Output node for TR2; used as active load or current source output in differential pair topologies. |
| 4 | E2 | Emitter of Transistor 2: Shared or independent emitter node for TR2; often tied to TR1 emitter for current mirror symmetry. |
| 5 | B2 | Base of Transistor 2: Matched control input for TR2; voltage must track B1 within ≤2 mV to preserve VBE matching. |
| 6 | C1 | Collector of Transistor 1: Primary output node for TR1; supplies mirrored current or differential output signal to next stage. |
Key Features
| Feature | Design Value |
|---|---|
| Current gain matching | hFE1/hFE2 = 0.95–1.05 ensures predictable current transfer ratio in active loads and cascode biasing without trimming. |
| Base-emitter voltage matching | VBE1−VBE2 ≤ 2 mV enables <0.02% input offset contribution in op-amp input stages using discrete matched pairs. |
| No mutual interference | Electrically isolated transistor dies prevent signal coupling between channels, preserving CMRR in differential amplifiers. |
| High-temperature operation | Rated to 175 °C junction temperature supports use in engine control units, power supply monitoring, and industrial PLC I/O modules. |
| Low collector-emitter saturation voltage | VCE(sat) = −200 mV typ. at −100 mA reduces conduction loss and improves efficiency in precision current-source outputs. |
Applications
| Current Mirror | Differential Amplifier |
|---|---|
|
Use Scenario: Precision current replication in analog sensor interfaces and DAC output buffers where output impedance must match input impedance over temperature. IC Role / Device Role / Timing Role: Dual-transistor current mirror providing matched current sourcing/sinking with <0.5% tracking error across −40 °C to +125 °C. Use Value: Eliminates need for external laser-trimmed resistors or discrete matching components, reducing BOM count and board area by 30% versus unmatched pairs. |
Use Scenario: Input stage of rail-to-rail operational amplifiers requiring high common-mode rejection and low input offset drift. IC Role / Device Role / Timing Role: Matched PNP pair forming the core differential pair, with shared emitter and individually biased bases for gain control. Use Value: Achieves >85 dB CMRR at 1 kHz due to sub-2 mV VBE mismatch, outperforming discrete un-matched transistors by >20 dB. |
| Active Load | Temperature-Stable Bias Network |
|
Use Scenario: High-impedance active load in wideband transimpedance amplifiers for photodiode signal conditioning in optical sensors. IC Role / Device Role / Timing Role: TR2 configured as constant-current active load for TR1-based amplifier, leveraging matched hFE for gain stability. Use Value: Maintains >10 MΩ small-signal impedance up to 10 MHz, enabling >100 dB open-loop gain with <1% variation over 100 °C ambient swing. |
Use Scenario: Bias generation for Class AB audio output stages and RF power amplifier drivers requiring thermal drift compensation. IC Role / Device Role / Timing Role: Complementary matched pair operating in VBE-multiplier configuration to track transistor junction temperature in real time. Use Value: Reduces quiescent current drift to <±5% over −40 °C to +150 °C, preventing thermal runaway without external thermistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCM847BSH | NPN/NPN complement; same package and matching specs but opposite polarity; VCEO = +45 V, IC = +100 mA. | Required in NPN-based current mirrors or differential pairs where high-side sourcing is needed instead of sinking. | Select when circuit topology mandates NPN configuration or when interfacing with positive-rail referenced logic or drivers. |
| BC847BPDW1T1G | PNP/NPN matched pair (not PNP/PNP); VCEO(PNP) = −45 V, VCEO(NPN) = +45 V; hFE matching ratio 0.9–1.1; VBE matching not specified. | Used in complementary feedback pairs or level-shifting circuits needing both polarities in one package. | Choose only if dual-polarity matching is required; avoid for pure PNP mirror applications due to asymmetric matching guarantees. |
Compared with BCM857BSHF, BCM847BSH provides identical matching performance in NPN form for high-side biasing, while BC847BPDW1T1G offers mixed-polarity integration at the cost of reduced PNP-specific matching assurance and no VBE matching spec - making it unsuitable for precision current mirror designs.
Availability
BCM857BSHF is available at Aetrix Electronics and suitable for current mirror circuits, differential amplifier front-ends, and temperature-stable bias networks requiring stable component supply across automotive, industrial control, and test equipment production cycles.
Supply support for BCM857BSHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging technologies.
BCM857BSHF belongs to Nexperia's matched bipolar transistor product line, engineered specifically for analog signal integrity in space-constrained, thermally demanding applications such as automotive sensor interfaces and industrial process controllers.
FAQ
What is the maximum continuous collector current per transistor in BCM857BSHF?
The maximum continuous collector current per transistor is −100 mA, tested under Tamb ≤ 25 °C with derating above that temperature per Fig. 1. This rating applies to steady-state DC operation and assumes proper PCB copper area (FR4, 35 µm, single-sided) for thermal dissipation.
Does BCM857BSHF support operation at 150 °C ambient temperature?
Yes - BCM857BSHF is rated for Tamb from −55 °C to +175 °C and has been characterized for hFE and VBE matching up to 175 °C junction temperature. At 150 °C ambient, junction temperature remains within limit with ≤150 mW per transistor dissipation on standard FR4.
How is pin 1 identified on the SOT363 package?
Pin 1 is marked by a molded index notch or dot located at the top-left corner of the SOT363 body when the marking side faces up and the leads point downward. The pin 1 indicator aligns with the "1" label in the simplified outline shown in Figure 11 of the datasheet.
Is BCM857BSHF automotive-qualified?
No - the official Nexperia datasheet does not state automotive qualification (AEC-Q101) for BCM857BSHF. It is rated for industrial and commercial applications. For automotive use, consult Nexperia's AEC-Q101-qualified equivalents such as the BCM857BQ series, which share matching performance but include full stress testing and PPAP documentation.
BCM857BSHF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 270mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BCM857BSHF FAQ
1.How can I place an order for BCM857BSHF through Aetrix?
Please submit a Request for Quotation (RFQ) for BCM857BSHF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCM857BSHF reliable?
The price and inventory of BCM857BSHF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM857BSHF is usually 5 days.
3.What payment methods are accepted for BCM857BSHF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM857BSHF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCM857BSHF?
BCM857BSHF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCM857BSHF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCM857BSHF?
For technical support, including BCM857BSHF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM857BSHF requirements.
6.How does Aetrix verify that BCM857BSHF is sourced from the original manufacturer or authorized distributors?
All BCM857BSHF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM857BSHF meets industry standards.
7.What is the process for return or replacement of BCM857BSHF?
All BCM857BSHF units undergo pre-shipment inspection (PSI). If there is an issue with BCM857BSHF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCM857BSHF part is unused and in its original packaging.
Return procedure for BCM857BSHF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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