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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Nexperia USA Inc. BCM857BSHX

Name: BCM857BSHX
Brand: Nexperia USA Inc.
SKU: BCM857BSHX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCM857BSHX

Manufacturer:: Nexperia USA Inc.

Category:: Bipolar Transistor Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: BCM857BSHX.pdf

Description:: TRANS 2PNP 45V 100MA 6-TSSOP

Quantity:: RFQ Add To RFQ list

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Inventory:4,384

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Product details

Overview

BCM857BSHX from Nexperia is a PNP/PNP matched double transistor in SOT363 (SC-88) package, designed for precision analog functions requiring tight parameter matching between two transistors. It delivers V_CEO = −45 V, I_C = −100 mA per transistor, h_FE matching ratio of 0.95–1.05, and V_BE matching ≤ 2 mV at −2 mA/−5 V - enabling high-accuracy current mirrors and differential amplifiers in space-constrained industrial signal conditioning circuits.

For engineers reviewing the BCM857BSHX datasheet, BCM857BSHX pinout, BCM857BSHX application, or BCM857BSHX equivalent, this device is selected for its verified current gain and base-emitter voltage matching across temperature, low collector capacitance (1.8 pF), and extended junction temperature capability up to 175 °C - critical for stable operation in automotive under-hood sensor interfaces and high-reliability power management feedback loops.

Technical Context

This dual PNP transistor integrates two electrically isolated, thermally coupled transistors in a single TSSOP6 package, enabling precise matching without external layout dependency. Its matched h_FE (0.95–1.05) and ΔV_BE ≤ 2 mV are specified at −2 mA/−5 V and 25 °C, with guaranteed performance maintained up to 175 °C junction temperature.

The device exhibits low V_CE(sat) (−200 mV typ. at −100 mA/−5 mA), low C_c (1.8 pF), and high f_T (100 MHz at −10 mA), supporting fast-switching and low-noise analog functions. Thermal resistance R_th(j-a) is 375 K/W per device on FR4 PCB - optimized for compact, thermally demanding layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V - supports rail-to-rail operation in negative-supply analog stages up to 45 V swing
I_C	−100 mA - enables direct drive of moderate-current loads like bias networks or small-signal switching nodes
h_FE matching	0.95–1.05 - ensures <±5% current ratio error in mirrored configurations without trimming
ΔV_BE	≤ 2 mV - limits offset voltage drift in differential pairs and improves common-mode rejection
C_c	1.8 pF - reduces Miller effect in high-frequency amplifier feedback paths
f_T	100 MHz - supports stable gain-bandwidth operation in audio and instrumentation preamp designs
P_tot (per device)	400 mW - allows dual-transistor operation at elevated ambient temperatures with minimal derating

Pinout & Package

BCM857BSHX is housed in a 6-pin TSSOP (SOT363) surface-mount plastic package measuring 2.1 mm × 1.25 mm × 0.95 mm, with 0.65 mm lead pitch and tin-plated terminations compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1	E1	Emitter of Transistor 1 - connects to reference node or current sink in mirror configuration
2	B1	Base of Transistor 1 - controls current flow in TR1; matched to B2 for balanced biasing
3	C2	Collector of Transistor 2 - output node for differential pair or second mirror leg
4	E2	Emitter of Transistor 2 - tied to E1 in current mirror or used as independent emitter node
5	B2	Base of Transistor 2 - driven identically to B1 to enforce matched h_FE behavior
6	C1	Collector of Transistor 1 - primary output node; thermally coupled to C2 for tracking stability

Key Features

Feature	Design Value
Matched DC current gain	h_FE1/h_FE2 = 0.95–1.05 - eliminates need for external resistor trimming in precision current sources
Matched base-emitter voltage	ΔV_BE ≤ 2 mV - directly reduces input offset in op-amp input stages and instrumentation amps
Low collector-emitter saturation voltage	V_CE(sat) = −200 mV typ. at −100 mA - minimizes conduction loss in active load and bias generator circuits
High-temperature operation	T_j up to 175 °C - supports deployment in engine control units and industrial motor drives without derating
No mutual interference	Electrically isolated transistors - prevents crosstalk in mixed-signal feedback paths and dual-channel sensing

Applications

Current Mirror

Differential Amplifier

Use Scenario: Precision bias current generation for op-amp input stages and ADC reference buffers.

IC Role / Device Role / Timing Role: Dual PNP transistor configured as emitter-coupled current mirror to replicate and scale reference current with matched gain.

Use Value: Achieves <±5% current ratio error over −40 °C to +125 °C due to integrated h_FE and V_BE matching - eliminating discrete resistor calibration.

Use Scenario: Input stage of rail-to-rail operational amplifier in automotive cabin temperature sensors.

IC Role / Device Role / Timing Role: Matched PNP pair forming the core differential pair, with bases as inputs and collectors as active loads.

Use Value: ΔV_BE ≤ 2 mV ensures input offset voltage remains below 3 mV across full operating temperature range, improving measurement resolution.

Active Load Circuit

Thermal Sensor Interface

Use Scenario: High-impedance active load in programmable gain instrumentation amplifier front-end.

IC Role / Device Role / Timing Role: One transistor acts as constant-current sink while the other provides matched thermal tracking for dynamic impedance compensation.

Use Value: Low C_c (1.8 pF) and high f_T (100 MHz) preserve bandwidth >10 MHz in closed-loop gain configurations.

Use Scenario: Linearized RTD or thermistor interface in industrial PLC analog input modules.

IC Role / Device Role / Timing Role: Dual transistor used in ratiometric current source and reference leg to cancel thermal drift in bridge excitation.

Use Value: Junction temperature rating of 175 °C enables direct mounting near heat-generating components without thermal runaway risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar matched PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCM847BSH	NPN/NPN complement; same package, matching specs, but opposite polarity	Required where circuit topology mandates NPN-based current mirroring or differential pairs	Select when designing complementary symmetry stages or interfacing with positive-rail logic systems
MBT3906DW1T1G	Loose matching (no h_FE/V_BE spec); higher V_CE(sat) (−400 mV); lower f_T (250 MHz)	Suitable for non-critical biasing but not precision analog functions	Choose only for cost-sensitive, non-matching applications where thermal tracking is not required

Compared with BCM847BSH, BCM857BSHX enables negative-rail referenced precision circuits; versus MBT3906DW1T1G, it delivers verified matching and 2× lower V_CE(sat), making it essential for high-accuracy current replication and low-offset differential amplification.

Availability

BCM857BSHX is available at Aetrix Electronics and suitable for current mirror circuits, differential amplifier front-ends, and active load designs requiring stable component supply across automotive, industrial control, and test equipment programs.

Supply support for BCM857BSHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, reliability, and miniaturization for industrial and automotive markets.

BCM857BSHX belongs to Nexperia's matched bipolar transistor product line, engineered specifically for analog signal path accuracy in space-constrained, thermally demanding applications - emphasizing parameter matching, thermal coupling, and extended temperature operation.

FAQ

What is the maximum continuous collector current per transistor in BCM857BSHX?

The absolute maximum continuous collector current per transistor is −100 mA, as defined in the limiting values table. This rating applies at T_amb ≤ 25 °C with proper PCB thermal design (FR4, single-sided, 35 µm copper). Derating is required above 25 °C ambient, following the per-device power derating curve (400 mW max at 25 °C, linearly decreasing to zero at 175 °C).

Can BCM857BSHX be used in place of discrete single transistors in a current mirror?

Yes - BCM857BSHX replaces two discrete PNP transistors with guaranteed h_FE matching (0.95–1.05) and ΔV_BE ≤ 2 mV, eliminating layout-induced mismatches and thermal gradients. Its monolithic construction ensures identical process and temperature tracking, improving mirror accuracy by >3× compared to discrete solutions on the same PCB.

Is BCM857BSHX qualified for automotive applications?

No - BCM857BSHX is not automotive-qualified per Nexperia's legal disclaimers. It is rated for industrial use up to 175 °C junction temperature but lacks AEC-Q101 qualification, PPAP documentation, or automotive-specific reliability testing. For automotive designs, consult Nexperia's AEC-Q101-qualified alternatives such as PBSS4041PAS.

What is the thermal resistance from junction to ambient for BCM857BSHX on a standard FR4 board?

The per-device thermal resistance from junction to ambient (R_th(j-a)) is 375 K/W when mounted on an FR4 PCB with single-sided 35 µm copper, tin-plated, and standard footprint - as measured per IEC 60747-17. This value assumes natural convection and defines the baseline for thermal design margining in enclosed enclosures or stacked PCB assemblies.

BCM857BSHX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: 2 PNP (Dual)

Current - Collector (Ic) (Max):: 100mA

Voltage - Collector Emitter Breakdown (Max):: 45V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 5V

Power - Max:: 270mW

Frequency - Transition:: 100MHz

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSSOP

BCM857BSHX FAQ

1.How can I place an order for BCM857BSHX through Aetrix?

Please submit a Request for Quotation (RFQ) for BCM857BSHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCM857BSHX reliable?

The price and inventory of BCM857BSHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM857BSHX is usually 5 days.

3.What payment methods are accepted for BCM857BSHX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM857BSHX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCM857BSHX?

BCM857BSHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCM857BSHX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCM857BSHX?

For technical support, including BCM857BSHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM857BSHX requirements.

6.How does Aetrix verify that BCM857BSHX is sourced from the original manufacturer or authorized distributors?

All BCM857BSHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM857BSHX meets industry standards.

7.What is the process for return or replacement of BCM857BSHX?

All BCM857BSHX units undergo pre-shipment inspection (PSI). If there is an issue with BCM857BSHX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCM857BSHX part is unused and in its original packaging.

Return procedure for BCM857BSHX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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