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Nexperia USA Inc. BCM857BV,115

Part No.:
BCM857BV,115
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixBCM857BV,115.pdf
Description:
TRANS 2PNP 45V 100MA SOT-666
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,890

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Product details

Overview

BCM857BV from Nexperia is a PNP/PNP matched double transistor in SOT666 package, designed for precision analog functions requiring tight current gain (hFE1/hFE2 = 0.9–1) and base-emitter voltage matching (≤2 mV) at −5 V VCE and −2 mA IC. It delivers matched performance across two fully isolated transistors for current mirror and differential amplifier topologies in space-constrained industrial signal conditioning circuits.

For engineers reviewing the BCM857BV datasheet, BCM857BV pinout, BCM857BV application, or BCM857BV equivalent, this device is selected when sub-2 mV VBE tracking, ±10% hFE ratio tolerance, and dual-transistor thermal coupling in ultra-small 1.6 mm × 1.2 mm footprint are required - not for switching-only or high-power roles.

Technical Context

This matched pair integrates two discrete PNP transistors with monolithic-level parameter correlation: hFE matching is defined as min(hFE₁,hFE₂)/max(hFE₁,hFE₂), and VBE matching is the absolute difference between VBE₁ and VBE₂ under identical bias conditions. Both transistors share identical limiting values including −45 V VCEO, −100 mA IC, and 200 mW per transistor power dissipation.

Thermal resistance differs by construction: per-device Rth(j-a) is 416 K/W (vs. 625 K/W per transistor), confirming shared thermal mass in the SOT666 package. Matching performance is specified only at Tamb = 25 °C and validated under reflow-soldered FR4 PCB mounting per IEC 60134 absolute maximum rating system.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −45 V: Maximum safe collector-emitter voltage with open base; defines upper rail limit in current mirror bias networks.
IC −100 mA: Continuous collector current per transistor; sets usable dynamic range for active-load amplifiers.
hFE (Typ) 290 at −5 V VCE, −2 mA IC: Midpoint DC current gain enabling stable bias point selection in differential pairs.
hFE1/hFE2 0.9–1: Ratio of smaller/larger hFE values; ensures ≤10% gain mismatch critical for common-mode rejection.
VBE1−VBE2 ≤2 mV: Absolute VBE difference at −5 V VCE, −2 mA IC; directly limits input offset voltage in op-amp input stages.
fT 175 MHz (Typ): Transition frequency at −5 V VCE, −10 mA IC; supports audio and low-MHz small-signal amplification.
Rth(j-a) (per device) 416 K/W: Junction-to-ambient thermal resistance on FR4 PCB; enables ~720 mW total dissipation before Tj exceeds 150 °C.

Pinout & Package

SOT666 plastic surface-mount package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height, with pin 1 index marking. Designed for reflow soldering only on FR4 PCBs with standardized footprint per Figure 12.

Pin/Terminal Circuit Role Design Meaning
1 E1 Emitter of Transistor 1: Connected to low-side reference node in current mirror or differential pair emitter degeneration.
2 B1 Base of Transistor 1: Input control terminal for bias current setting or differential input node.
3 C2 Collector of Transistor 2: Output node for mirrored current or active load in differential amplifier output stage.
4 E2 Emitter of Transistor 2: Shared or independently biased emitter node enabling common-mode feedback paths.
5 B2 Base of Transistor 2: Second input terminal for differential signaling or matched bias network connection.
6 C1 Collector of Transistor 1: Primary current source node in mirror configuration or differential input load path.

Key Features

Feature Design Value
Current gain matching hFE ratio ≥0.9 ensures ≤10% mismatch, directly improving CMRR in discrete op-amp input stages.
Base-emitter voltage matching ≤2 mV VBE difference minimizes input offset voltage without external trimming in precision current mirrors.
Thermally coupled die layout Shared package enables <1 °C inter-transistor ΔT during operation, preserving matching over temperature drift.
Ultra-small SOT666 footprint 1.6 mm × 1.2 mm area saves >40% board space vs. dual-SOT363 solutions while maintaining isolation.

Applications

Current Mirror Differential Amplifier

Use Scenario: Precision current replication in sensor front-end biasing and DAC output buffers.

IC Role / Device Role / Timing Role: Dual-transistor active current source/sink with matched hFE and VBE ensuring stable mirroring ratio.

Use Value: Delivers <0.5% current error over −40 °C to +85 °C due to correlated thermal and parametric drift.

Use Scenario: Discrete-input stage for instrumentation amplifiers and programmable-gain amplifiers.

IC Role / Device Role / Timing Role: Matched PNP pair forming emitter-coupled input core with common emitter resistor.

Use Value: Achieves >60 dB common-mode rejection at DC via ≤2 mV VBE mismatch and symmetrical layout.

Active Load Circuit Temperature-Stable Bias Generator

Use Scenario: High-impedance active load in single-supply op-amp output stages.

IC Role / Device Role / Timing Role: TR2 configured as constant-current sink while TR1 provides complementary drive.

Use Value: Enables >1 MΩ small-signal impedance with <1% variation across 10:1 current range.

Use Scenario: Reference current generation for bandgap circuits and voltage regulators.

IC Role / Device Role / Timing Role: Matched pair operating in Widlar or Wilson configuration for PTAT/CTAT synthesis.

Use Value: Reduces curvature error by 3× vs. unmatched transistors due to correlated hFE and VBE temperature coefficients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar matched PNP transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC847BPDW1T3G PNP/NPN complementary pair; no hFE or VBE matching spec; 500 mW total Ptot. Used in push-pull output stages, not precision matching roles. Select only if complementary switching-not matched analog-function is needed.
MBT3906DW1T1G PNP/PNP pair in SOT-363; hFE matching not specified; VBE matching not characterized. Targeted at general-purpose dual-switching; lacks matching validation data. Acceptable only for non-critical bias networks where <10% hFE variation is tolerable.

Compared with BC847BPDW1T3G and MBT3906DW1T1G, the BCM857BV uniquely provides factory-characterized hFE ratio and VBE delta specifications essential for analog accuracy - neither alternative offers traceable matching performance or thermal coupling assurance.

Availability

BCM857BV is available at Aetrix Electronics and suitable for current mirror circuits, differential amplifier front-ends, active load configurations, and temperature-stable bias generators requiring stable component supply and guaranteed matching performance.

Supply support for BCM857BV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert headquartered in Nijmegen, Netherlands, specializing in high-volume, high-reliability discrete and logic devices for industrial, automotive, and computing markets.

The BCM857BV belongs to Nexperia's matched transistor product line, engineered specifically for analog signal-path precision where parameter correlation between integrated transistors is mandatory - not for generic switching or digital logic use.

FAQ

Is BCM857BV qualified for automotive applications?

No. The BCM857BV is not automotive-qualified per AEC-Q101. Nexperia explicitly states in its legal disclaimers that unless expressly marked "automotive qualified", the device is unsuitable for safety-critical or life-support systems. Its qualification is limited to industrial and consumer-grade operation across −65 °C to +150 °C ambient.

What is the maximum allowable peak collector current for BCM857BV?

The peak collector current is −200 mA per transistor, specified for tp ≤ 1 ms single pulses under IEC 60134 limiting values. This rating assumes proper PCB thermal design (FR4, single-sided copper, tin-plated) and reflow soldering - not wave or hand soldering.

Can BCM857BV be used in linear regulator pass elements?

No. Its −100 mA continuous collector current and −45 V VCEO are insufficient for typical linear regulator pass applications, which require higher voltage and current ratings plus SOA compliance. The device is optimized for small-signal matching, not power handling.

Does BCM857BV support lead-free reflow profiles?

Yes. The datasheet mandates reflow soldering as the only recommended method, with thermal characteristics (Rth(j-a)) characterized under JEDEC J-STD-020-compliant reflow conditions. Lead-free SAC305 profile compatibility is confirmed by Nexperia's SOT666 package qualification.

BCM857BV,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
Transistor Type:
2 PNP (Dual) Matched Pair
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
45V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Power - Max:
300mW
Frequency - Transition:
175MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-666

BCM857BV,115 FAQ

1.How can I place an order for BCM857BV,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCM857BV,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCM857BV,115 reliable?

The price and inventory of BCM857BV,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM857BV,115 is usually 5 days.

3.What payment methods are accepted for BCM857BV,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM857BV,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCM857BV,115?

BCM857BV,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCM857BV,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCM857BV,115?

For technical support, including BCM857BV,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM857BV,115 requirements.

6.How does Aetrix verify that BCM857BV,115 is sourced from the original manufacturer or authorized distributors?

All BCM857BV,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM857BV,115 meets industry standards.

7.What is the process for return or replacement of BCM857BV,115?

All BCM857BV,115 units undergo pre-shipment inspection (PSI). If there is an issue with BCM857BV,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCM857BV,115 part is unused and in its original packaging.

Return procedure for BCM857BV,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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